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1. 发明申请

US20100330687A1 ULTRA-SENSITIVE DETECTION TECHNIQUES 有权
标题翻译：超声检测技术
公开(公告)号：US20100330687A1
公开(公告)日：2010-12-30
申请号：US11496383
申请日：2006-07-31
申请人： Ali Afzali - Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali - Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： G01N27/00 , H01L29/775 , G01R27/26
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水纳米线，其包括半导体材料，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

2. 发明申请

US20100108131A1 Techniques for Use of Nanotechnology in Photovoltaics 有权
标题翻译：在光伏领域使用纳米技术的技术
公开(公告)号：US20100108131A1
公开(公告)日：2010-05-06
申请号：US12544066
申请日：2009-08-19
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L31/0352
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
摘要翻译：提供了将纳米技术与光伏组合相结合的技术。一方面，提供一种形成光伏器件的方法，包括以下步骤。在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。在第二掺杂半导体层上沉积透明电极层。

3. 发明授权

US07977690B2 Techniques for use of nanotechnology in photovoltaics 有权
公开(公告)号：US07977690B2
公开(公告)日：2011-07-12
申请号：US12544066
申请日：2009-08-19
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/18
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.

4. 发明授权

US07888753B2 Ultra-sensitive detection techniques 有权
标题翻译：超灵敏检测技术
公开(公告)号：US07888753B2
公开(公告)日：2011-02-15
申请号：US11496383
申请日：2006-07-31
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水包括半导体材料的纳米线，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

5. 发明授权

US08026560B2 Ultra-sensitive detection techniques 有权
公开(公告)号：US08026560B2
公开(公告)日：2011-09-27
申请号：US12837119
申请日：2010-07-15
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.

6. 发明申请

US20100327259A1 Ultra-Sensitive Detection Techniques 有权
标题翻译：超敏感检测技术
公开(公告)号：US20100327259A1
公开(公告)日：2010-12-30
申请号：US12837119
申请日：2010-07-15
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/775
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水纳米线，其包括半导体材料，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

7. 发明授权

US07998788B2 Techniques for use of nanotechnology in photovoltaics 有权
标题翻译：在光伏技术中使用纳米技术的技术
公开(公告)号：US07998788B2
公开(公告)日：2011-08-16
申请号：US11494195
申请日：2006-07-27
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L51/40
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
摘要翻译：提供了将纳米技术与光伏组合相结合的技术。一方面，提供一种形成光伏器件的方法，包括以下步骤。在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。在第二掺杂半导体层上沉积透明电极层。

8. 发明申请

US20110165724A1 TECHNIQUES FOR USE OF NANOTECHNOLOGY IN PHOTOVOLTAICS 有权
标题翻译：在光伏中使用纳米技术的技术
公开(公告)号：US20110165724A1
公开(公告)日：2011-07-07
申请号：US11494195
申请日：2006-07-27
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L31/0236
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
摘要翻译：提供了将纳米技术与光伏组合相结合的技术。一方面，提供一种形成光伏器件的方法，包括以下步骤。在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。在第二掺杂半导体层上沉积透明电极层。

9. 发明授权

US08796596B2 Heater and memory cell, memory device and recording head including the heater 有权
标题翻译：加热器和存储单元，存储器件和包括加热器的记录头
公开(公告)号：US08796596B2
公开(公告)日：2014-08-05
申请号：US12901079
申请日：2010-10-08
申请人： Supratik Guha , Hendrik F. Hamann
发明人： Supratik Guha , Hendrik F. Hamann
IPC分类号： H05B3/10
CPC分类号： G11B7/00454 , B82Y10/00 , G11B7/00557 , G11B7/22 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H05B2214/04
摘要： A memory cell includes at least one heater, and at least two leads and a heating element which is formed between at least two leads, a material of the heating element being different from a material of at least two leads such that a location of a hot spot in the heater is controllable based on a polarity of current in the heater and at least one storage medium formed adjacent to at least one heater.
摘要翻译：存储单元包括至少一个加热器，以及形成在至少两个引线之间的至少两个引线和加热元件，加热元件的材料不同于至少两个引线的材料，使得热的位置基于加热器中的电流的极性和与至少一个加热器相邻形成的至少一个存储介质可以控制加热器中的点。

10. 发明授权

US08999458B2 Method and apparatus for fabricating or altering microstructures using local chemical alterations 有权
标题翻译：使用局部化学改变制造或改变微结构的方法和装置
公开(公告)号：US08999458B2
公开(公告)日：2015-04-07
申请号：US13447982
申请日：2012-04-16
申请人： Supratik Guha , Hendrik F. Hamann , Herschel M. Marchman , Robert J. Von Gutfeld
发明人： Supratik Guha , Hendrik F. Hamann , Herschel M. Marchman , Robert J. Von Gutfeld
IPC分类号： C23C8/00 , H01L21/768 , H01L21/311 , H01L21/3213 , H01L29/66 , H01L29/786
CPC分类号： H01L21/76892 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L21/32135 , H01L29/66742 , H01L29/78684 , Y10S977/855 , Y10S977/857 , Y10S977/89 , Y10S977/891 , Y10S977/892
摘要： A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure.
摘要翻译：一种用于制造或改变微结构的方法和装置，用于加热以促进形成或改变亚微结构的局部化学反应。

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