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1. 发明授权

US07888753B2 Ultra-sensitive detection techniques 有权
标题翻译：超灵敏检测技术
公开(公告)号：US07888753B2
公开(公告)日：2011-02-15
申请号：US11496383
申请日：2006-07-31
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水包括半导体材料的纳米线，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

2. 发明授权

US08026560B2 Ultra-sensitive detection techniques 有权
公开(公告)号：US08026560B2
公开(公告)日：2011-09-27
申请号：US12837119
申请日：2010-07-15
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.

3. 发明申请

US20100327259A1 Ultra-Sensitive Detection Techniques 有权
标题翻译：超敏感检测技术
公开(公告)号：US20100327259A1
公开(公告)日：2010-12-30
申请号：US12837119
申请日：2010-07-15
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/775
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水纳米线，其包括半导体材料，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

4. 发明申请

US20100330687A1 ULTRA-SENSITIVE DETECTION TECHNIQUES 有权
标题翻译：超声检测技术
公开(公告)号：US20100330687A1
公开(公告)日：2010-12-30
申请号：US11496383
申请日：2006-07-31
申请人： Ali Afzali - Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali - Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： G01N27/00 , H01L29/775 , G01R27/26
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水纳米线，其包括半导体材料，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

5. 发明授权

US07977690B2 Techniques for use of nanotechnology in photovoltaics 有权
公开(公告)号：US07977690B2
公开(公告)日：2011-07-12
申请号：US12544066
申请日：2009-08-19
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/18
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.

6. 发明申请

US20100108131A1 Techniques for Use of Nanotechnology in Photovoltaics 有权
标题翻译：在光伏领域使用纳米技术的技术
公开(公告)号：US20100108131A1
公开(公告)日：2010-05-06
申请号：US12544066
申请日：2009-08-19
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L31/0352
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
摘要翻译：提供了将纳米技术与光伏组合相结合的技术。一方面，提供一种形成光伏器件的方法，包括以下步骤。在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。在第二掺杂半导体层上沉积透明电极层。

7. 发明授权

US07998788B2 Techniques for use of nanotechnology in photovoltaics 有权
标题翻译：在光伏技术中使用纳米技术的技术
公开(公告)号：US07998788B2
公开(公告)日：2011-08-16
申请号：US11494195
申请日：2006-07-27
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L51/40
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
摘要翻译：提供了将纳米技术与光伏组合相结合的技术。一方面，提供一种形成光伏器件的方法，包括以下步骤。在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。在第二掺杂半导体层上沉积透明电极层。

8. 发明申请

US20110165724A1 TECHNIQUES FOR USE OF NANOTECHNOLOGY IN PHOTOVOLTAICS 有权
标题翻译：在光伏中使用纳米技术的技术
公开(公告)号：US20110165724A1
公开(公告)日：2011-07-07
申请号：US11494195
申请日：2006-07-27
申请人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L31/0236
CPC分类号： H01L31/03529 , H01L31/035227 , H01L31/068 , H01L31/1804 , H01L31/1808 , H01L31/1812 , Y02E10/547 , Y02P70/521 , Y10S977/743 , Y10S977/813 , Y10S977/827 , Y10S977/936 , Y10S977/938
摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
摘要翻译：提供了将纳米技术与光伏组合相结合的技术。一方面，提供一种形成光伏器件的方法，包括以下步骤。在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。在第二掺杂半导体层上沉积透明电极层。

9. 发明申请

US20080295970A1 SYSTEM AND METHOD OF TRANSFER PRINTING AN ORGANIC SEMICONDUCTOR 审中-公开
标题翻译：转印有机半导体的系统与方法
公开(公告)号：US20080295970A1
公开(公告)日：2008-12-04
申请号：US12192636
申请日：2008-08-15
申请人： Ali Afzali-Ardakani , Hendrik F. Hamann , Praveen Chaudhari , Robert J. Von Gutfeld
发明人： Ali Afzali-Ardakani , Hendrik F. Hamann , Praveen Chaudhari , Robert J. Von Gutfeld
IPC分类号： B65H37/00
CPC分类号： B41M5/38214 , B41M5/265 , H01L51/0013 , H01L51/0036 , H01L51/0044 , H01L51/0052 , Y10T156/1705 , Y10T428/24802
摘要： The present invention provides a substrate having thereon a patterned small molecule organic semiconductor layer. The present invention also provides a method and a system for producing a substrate having thereon a patterned small molecule organic semiconductor layer. The substrate having thereon a patterned small molecule organic semiconductor layer is produced by exposing a donor substrate having thereon a small molecule organic semiconductor layer to energy to cause the thermal transfer of a small organic molecule onto an acceptor substrate.
摘要翻译：本发明提供一种其上具有图案化的小分子有机半导体层的基板。本发明还提供一种用于制造其上具有图案化的小分子有机半导体层的基板的方法和系统。其上具有图案化的小分子有机半导体层的衬底通过将其上具有小分子有机半导体层的施主衬底暴露于能量而产生小的有机分子到受主衬底上的热转移。

10. 发明授权

US08999458B2 Method and apparatus for fabricating or altering microstructures using local chemical alterations 有权
标题翻译：使用局部化学改变制造或改变微结构的方法和装置
公开(公告)号：US08999458B2
公开(公告)日：2015-04-07
申请号：US13447982
申请日：2012-04-16
申请人： Supratik Guha , Hendrik F. Hamann , Herschel M. Marchman , Robert J. Von Gutfeld
发明人： Supratik Guha , Hendrik F. Hamann , Herschel M. Marchman , Robert J. Von Gutfeld
IPC分类号： C23C8/00 , H01L21/768 , H01L21/311 , H01L21/3213 , H01L29/66 , H01L29/786
CPC分类号： H01L21/76892 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L21/32135 , H01L29/66742 , H01L29/78684 , Y10S977/855 , Y10S977/857 , Y10S977/89 , Y10S977/891 , Y10S977/892
摘要： A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure.
摘要翻译：一种用于制造或改变微结构的方法和装置，用于加热以促进形成或改变亚微结构的局部化学反应。

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