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1. 发明授权

US08636879B2 Electro chemical deposition systems and methods of manufacturing using the same 有权
标题翻译：电化学沉积系统及使用其的制造方法
公开(公告)号：US08636879B2
公开(公告)日：2014-01-28
申请号：US13452298
申请日：2012-04-20
申请人： Moosung Chae , Bum Ki Moon , Sunoo Kim , Danny Pak-Chum Shum
发明人： Moosung Chae , Bum Ki Moon , Sunoo Kim , Danny Pak-Chum Shum
IPC分类号： C25D21/12 , C25D17/00
CPC分类号： H01L21/76877 , C25D5/02 , C25D17/001 , C25D17/007 , C25D17/12 , C25D21/12 , H01L21/2885
摘要： An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.
摘要翻译：描述了用于在半导体晶片上形成特征的电化学沉积系统。电化学沉积通过为包括阴极，阳极和多个电独立辅助电极的电极供电来执行。

2. 发明申请

US20120104552A1 Capacitors in Integrated Circuits and Methods of Fabrication Thereof 有权
标题翻译：集成电路中的电容器及其制造方法
公开(公告)号：US20120104552A1
公开(公告)日：2012-05-03
申请号：US12913550
申请日：2010-10-27
申请人： Sunoo Kim , Moosung Chae , Bum Ki Moon
发明人： Sunoo Kim , Moosung Chae , Bum Ki Moon
IPC分类号： H01L21/02 , H01G4/00 , H01L21/20
CPC分类号： H01L28/87 , H01G4/002 , H01G4/005 , H01L23/5223 , H01L28/60 , H01L28/90 , H01L28/92 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in a second via level, the second metal bars are coupled to the first potential node. The second metal bars are longer than the second vias. The second via level is above the first via level and the first metal bars are parallel to the second metal bars. Each of the first metal bars has a first end, an opposite second end, and a middle portion between the first and the second ends. Each of the middle portions of the first metal bars and the second ends of the first metal bars do not contact any metal line.
摘要翻译：在一个实施例中，电容器包括具有第一金属棒和第一通孔的第一通孔级，使得第一金属棒耦合到第一电位节点。第一金属条比第一通孔长。第二金属棒和第二通孔设置在第二通孔级中，第二金属棒耦合到第一电位节点。第二金属棒比第二通孔长。第二通孔电平高于第一通孔电平，第一金属棒平行于第二金属棒。每个第一金属棒具有第一端，相对的第二端和在第一端和第二端之间的中间部分。第一金属棒的中间部分和第一金属棒的第二端不接触任何金属线。

3. 发明授权

US08618635B2 Capacitors in integrated circuits and methods of fabrication thereof 有权
标题翻译：集成电路中的电容器及其制造方法
公开(公告)号：US08618635B2
公开(公告)日：2013-12-31
申请号：US12913550
申请日：2010-10-27
申请人： Sunoo Kim , Moosung Chae , Bum Ki Moon
发明人： Sunoo Kim , Moosung Chae , Bum Ki Moon
IPC分类号： H01L21/02
CPC分类号： H01L28/87 , H01G4/002 , H01G4/005 , H01L23/5223 , H01L28/60 , H01L28/90 , H01L28/92 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in a second via level, the second metal bars are coupled to the first potential node. The second metal bars are longer than the second vias. The second via level is above the first via level and the first metal bars are parallel to the second metal bars. Each of the first metal bars has a first end, an opposite second end, and a middle portion between the first and the second ends. Each of the middle portions of the first metal bars and the second ends of the first metal bars do not contact any metal line.
摘要翻译：在一个实施例中，电容器包括具有第一金属棒和第一通孔的第一通孔级，使得第一金属棒耦合到第一电位节点。第一金属条比第一通孔长。第二金属棒和第二通孔设置在第二通孔级中，第二金属棒耦合到第一电位节点。第二金属棒比第二通孔长。第二通孔电平高于第一通孔电平，第一金属棒平行于第二金属棒。每个第一金属棒具有第一端，相对的第二端和在第一端和第二端之间的中间部分。第一金属棒的中间部分和第一金属棒的第二端不接触任何金属线。

4. 发明申请

US20120205238A1 Electro Chemical Deposition Systems and Methods of Manufacturing Using the Same 有权
标题翻译：电化学沉积系统及其使用方法
公开(公告)号：US20120205238A1
公开(公告)日：2012-08-16
申请号：US13452298
申请日：2012-04-20
申请人： Moosung Chae , Bum Ki Moon , Sun-Oo Kim , Danny Pak-Chum Shum
发明人： Moosung Chae , Bum Ki Moon , Sun-Oo Kim , Danny Pak-Chum Shum
IPC分类号： C25D21/12 , C25D17/00
CPC分类号： H01L21/76877 , C25D5/02 , C25D17/001 , C25D17/007 , C25D17/12 , C25D21/12 , H01L21/2885
摘要： An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.
摘要翻译：描述了用于在半导体晶片上形成特征的电化学沉积系统。电化学沉积通过为包括阴极，阳极和多个电独立辅助电极的电极供电来执行。

5. 发明授权

US08197660B2 Electro chemical deposition systems and methods of manufacturing using the same 有权
标题翻译：电化学沉积系统及使用其的制造方法
公开(公告)号：US08197660B2
公开(公告)日：2012-06-12
申请号：US11852910
申请日：2007-09-10
申请人： Moosung Chae , Bum Ki Moon , Sun-Oo Kim , Danny Pak-Chum Shum
发明人： Moosung Chae , Bum Ki Moon , Sun-Oo Kim , Danny Pak-Chum Shum
IPC分类号： C25D5/00
CPC分类号： H01L21/76877 , C25D5/02 , C25D17/001 , C25D17/007 , C25D17/12 , C25D21/12 , H01L21/2885
摘要： An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.
摘要翻译：描述了用于在半导体晶片上形成特征的电化学沉积系统。电化学沉积通过为包括阴极，阳极和多个电独立辅助电极的电极供电来执行。

6. 发明授权

US07713866B2 Semiconductor devices and methods of manufacture thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07713866B2
公开(公告)日：2010-05-11
申请号：US11602885
申请日：2006-11-21
申请人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
发明人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
IPC分类号： H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.
摘要翻译：公开了半导体器件及其制造方法。优选实施例包括形成阻挡层的方法。形成阻挡层的方法包括提供工件，在工件上形成第一材料层，第一材料层包括氮化物基金属化合物。在第一材料层上形成第二材料层。第二材料层包括Ta或Ti。阻挡层包括第一材料层和至少第二材料层。

7. 发明授权

US09194036B2 Plasma vapor deposition 有权
标题翻译：等离子体气相沉积
公开(公告)号：US09194036B2
公开(公告)日：2015-11-24
申请号：US11851269
申请日：2007-09-06
申请人： Sun-Oo Kim , Moosung Chae , Bum Ki Moon
发明人： Sun-Oo Kim , Moosung Chae , Bum Ki Moon
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3464 , C23C14/3407 , C23C14/3471 , H01J37/34 , H01J37/3414 , H01J37/3417 , H01J37/3423
摘要： A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes.
摘要翻译：描述了用于在半导体晶片上形成特征的等离子体气相沉积系统。等离子体气相沉积包括主要目标电极和多个次要目标电极。通过从初级和次级目标电极溅射原子来进行沉积。

8. 发明授权

US08432041B2 Semiconductor devices and methods of manufacture thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08432041B2
公开(公告)日：2013-04-30
申请号：US12728813
申请日：2010-03-22
申请人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
发明人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
IPC分类号： H01L23/48 , H01L23/54 , H01L29/40
CPC分类号： H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.
摘要翻译：公开了半导体器件及其制造方法。优选实施例包括形成阻挡层的方法。形成阻挡层的方法包括提供工件，在工件上形成第一材料层，第一材料层包括氮化物基金属化合物。在第一材料层上形成第二材料层。第二材料层包括Ta或Ti。阻挡层包括第一材料层和至少第二材料层。

9. 发明申请

US20090065349A1 Plasma Vapor Deposition 有权
标题翻译：等离子体气相沉积
公开(公告)号：US20090065349A1
公开(公告)日：2009-03-12
申请号：US11851269
申请日：2007-09-06
申请人： Sun-Oo Kim , Moosung Chae , Bum Ki Moon
发明人： Sun-Oo Kim , Moosung Chae , Bum Ki Moon
IPC分类号： C23C14/00
CPC分类号： C23C14/3464 , C23C14/3407 , C23C14/3471 , H01J37/34 , H01J37/3414 , H01J37/3417 , H01J37/3423
摘要： A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes.
摘要翻译：描述了用于在半导体晶片上形成特征的等离子体气相沉积系统。等离子体气相沉积包括主要目标电极和多个次要目标电极。通过从初级和次级目标电极溅射原子来进行沉积。

10. 发明申请

US20100171185A1 Semiconductor Devices and Methods of Manufacture Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100171185A1
公开(公告)日：2010-07-08
申请号：US12728813
申请日：2010-03-22
申请人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
发明人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
IPC分类号： H01L23/48 , H01L29/78
CPC分类号： H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.
摘要翻译：公开了半导体器件及其制造方法。优选实施例包括形成阻挡层的方法。形成阻挡层的方法包括提供工件，在工件上形成第一材料层，第一材料层包括氮化物基金属化合物。在第一材料层上形成第二材料层。第二材料层包括Ta或Ti。阻挡层包括第一材料层和至少第二材料层。

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