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1. 发明申请

US20070027256A1 Styrenic thermoplastics composition 审中-公开
标题翻译：苯乙烯热塑性组合物
公开(公告)号：US20070027256A1
公开(公告)日：2007-02-01
申请号：US10567722
申请日：2004-10-08
申请人： Dong-chul Kim , Chan-hong Lee , Sung-je Cha , Yun-kyoung Cho , Sung-tae Ahn
发明人： Dong-chul Kim , Chan-hong Lee , Sung-je Cha , Yun-kyoung Cho , Sung-tae Ahn
IPC分类号： C08L51/00
CPC分类号： C08L51/04 , C08L25/06 , C08L2666/02
摘要： The present invention relates to an acrylic rubber-modified copolymer and the styrenic thermoplastics composition using the same. More particularly, the present invention relates to the styrenic thermoplastics composition having superior appearance and thermoformability, which is obtained by adding 0.5-20 parts by weight of an acrylic rubber-modified copolymer having a rubber particle size ranging from 800 to 6, 000 Åto 100 parts by weight of a resin of 10-50 parts by weight of a graft copolymer comprising rubber-modified styrene and 30-70 parts by weight of a copolymer comprising styrene.
摘要翻译：本发明涉及丙烯酸类橡胶改性共聚物和使用其的苯乙烯类热塑性塑料组合物。更具体地说，本发明涉及具有优异外观和热成型性的苯乙烯类热塑性塑料组合物，其通过将0.5-20重量份橡胶粒度为800至6,000至约100的丙烯酸橡胶改性共聚物重量份10-50重量份的包含橡胶改性苯乙烯的接枝共聚物和30-70重量份包含苯乙烯的共聚物的树脂。

2. 发明申请

US20060079639A1 Chemical resistant thermoplastic resin composition 有权
标题翻译：耐化学性热塑性树脂组合物
公开(公告)号：US20060079639A1
公开(公告)日：2006-04-13
申请号：US11248527
申请日：2005-10-12
申请人： Sung-je Cha , Sung-tae Ahn , Dong-chul Kim , Yun-kyoung Cho
发明人： Sung-je Cha , Sung-tae Ahn , Dong-chul Kim , Yun-kyoung Cho
IPC分类号： C08L51/04
CPC分类号： C08L25/12 , C08L23/08 , C08L33/06 , C08L55/02 , C08L2666/24 , C08L2666/02
摘要： Disclosed is a resin composition comprising (A) 100 parts by weight of a base resin comprising a rubber-modified styrene-containing graft copolymer and a styrene-containing copolymer; (B) 0.5-8 parts by weight of an acrylic rubber graft copolymer resin having an average particle size of 0.1-0.5 μm; and (C) 0.5-8 parts by weight of a graft copolymer resin comprising an ethylene α-olefinic copolymer rubber having an average particle size of 0.1-0.8 μm. The thermoplastic resin composition of the present invention greatly improves chemical resistance to insulating materials, such as urethane foam, or foaming agent compounds, such as freon (CFC-11, HCFC-141b, HFC-245fa, HFC-245eb, HFC-245ca, HFC-356mffm) and cyclopentane and offers superior impact strength, whiteness and processability. It can be useful for extrusion sheets of refrigerator interiors.
摘要翻译：公开了一种树脂组合物，其包含（A）100重量份的包含橡胶改性的含苯乙烯的接枝共聚物和含苯乙烯的共聚物的基础树脂; （B）0.5-8重量份平均粒径为0.1-0.5μm的丙烯酸橡胶接枝共聚物树脂; 和（C）0.5-8重量份的包含平均粒径为0.1-0.8μm的乙烯α-烯烃共聚物橡胶的接枝共聚物树脂。本发明的热塑性树脂组合物大大提高了对聚氨酯泡沫等绝缘材料的耐化学性，或氟利昂（CFC-11，HCFC-141b，HFC-245fa，HFC-245eb，HFC-245ca， HFC-356mffm）和环戊烷，具有优异的冲击强度，白度和加工性能。它可用于冰箱内部的挤出片材。

3. 发明授权

US07396877B2 Chemical resistant thermoplastic resin composition 有权
标题翻译：耐化学性热塑性树脂组合物
公开(公告)号：US07396877B2
公开(公告)日：2008-07-08
申请号：US11248527
申请日：2005-10-12
申请人： Sung-je Cha , Sung-tae Ahn , Dong-chul Kim , Yun-kyoung Cho
发明人： Sung-je Cha , Sung-tae Ahn , Dong-chul Kim , Yun-kyoung Cho
IPC分类号： C08L51/04
CPC分类号： C08L25/12 , C08L23/08 , C08L33/06 , C08L55/02 , C08L2666/24 , C08L2666/02
摘要： Disclosed is a resin composition comprising (A) 100 parts by weight of a base resin comprising a rubber-modified styrene-containing graft copolymer and a styrene-containing copolymer; (B) 0.5-8 parts by weight of an acrylic rubber graft copolymer resin having an average particle size of 0.1-0.5 μm; and (C) 0.5-8 parts by weight of a graft copolymer resin comprising an ethylene α-olefinic copolymer rubber having an average particle size of 0.1-0.8 μm. The thermoplastic resin composition of the present invention greatly improves chemical resistance to insulating materials, such as urethane foam, or foaming agent compounds, such as freon (CFC-11, HCFC-141b, HFC-245fa, HFC-245eb, HFC-245ca, HFC-356mffm) and cyclopentane and offers superior impact strength, whiteness and processability. It can be useful for extrusion sheets of refrigerator interiors.
摘要翻译：公开了一种树脂组合物，其包含（A）100重量份的包含橡胶改性的含苯乙烯的接枝共聚物和含苯乙烯的共聚物的基础树脂; （B）0.5-8重量份平均粒径为0.1-0.5μm的丙烯酸橡胶接枝共聚物树脂; 和（C）0.5-8重量份的包含平均粒径为0.1-0.8μm的乙烯α-烯烃共聚物橡胶的接枝共聚物树脂。本发明的热塑性树脂组合物大大提高了对聚氨酯泡沫等绝缘材料的耐化学性，或氟利昂（CFC-11，HCFC-141b，HFC-245fa，HFC-245eb，HFC-245ca， HFC-356mffm）和环戊烷，具有优异的冲击强度，白度和加工性能。它可用于冰箱内部的挤出片材。

4. 发明授权

US08378024B2 Low surface gloss styrene resin composition, and low surface gloss sheet and composite article therefrom 有权
标题翻译：低表面光泽的苯乙烯树脂组合物和低表面光泽度的片材及其复合制品
公开(公告)号：US08378024B2
公开(公告)日：2013-02-19
申请号：US12525575
申请日：2008-01-30
申请人： Yun-kyoung Cho , Seon-mo Son , Bong-keun Lee , Tae-bin Ahn , Han-jong You , Sung-tae Ahn
发明人： Yun-kyoung Cho , Seon-mo Son , Bong-keun Lee , Tae-bin Ahn , Han-jong You , Sung-tae Ahn
IPC分类号： C08L25/04 , C08L25/06 , C08L25/10 , C08L25/12
CPC分类号： C08L51/04 , B32B25/14 , B32B27/08 , B32B27/30 , C08J2325/06 , C08L25/06 , C08L25/12 , C08L35/06 , C08L2205/02 , C08L2205/03 , C08L2205/035 , C08L2555/40 , Y10T428/31924 , C08L2666/04 , C08L2666/06 , C08L2666/02
摘要： The present invention relates to a low surface gloss styrene resin composition. The composition of the present invention is composed of (A) 80-99.9 weight % of the basic resin comprising rubber-modified styrene resin and (B) 0.1-20 weight % of syndiotactic polystyrene, the matting agent. The composition also includes (C) hydrogenated styrene block copolymer comprising styrene block and butadiene rubber block as a compatibilizer by 0.1-20 weight % for the total weight of the low surface gloss styrene resin composed of (A) the basic resin and (B) the matting agent and additionally includes (D) a plasticizer by 0.1-30 weight %. The composition of the present invention has excellent weatherability and impact-resistance in addition to the low surface gloss properties, so that it can be applied in various products, particularly exterior products for structures such as sidings and window frames, etc.
摘要翻译：本发明涉及一种低表面光泽的苯乙烯树脂组合物。本发明的组合物由（A）80-99.9重量％的包含橡胶改性苯乙烯树脂的基础树脂和（B）0.1-20重量％的间同立构聚苯乙烯，消光剂组成。该组合物还包含（C）包含苯乙烯嵌段和丁二烯橡胶嵌段作为增容剂的氢化苯乙烯嵌段共聚物，由（A）碱性树脂和（B）组成的低表面光泽苯乙烯树脂的总重量为0.1-20重量％该消光剂还包括（D）0.1-30重量％的增塑剂。本发明的组合物除了具有低的表面光泽特性之外还具有优异的耐候性和抗冲击性，因此可以应用于各种产品，特别是用于诸如边框和窗框等结构的外用产品。

5. 发明申请

US20100075165A1 LOW SURFACE GLOSS STYRENE RESIN COMPOSITION, AND LOW SURFACE GLOSS SHEET AND COMPOSITE ARTICLE THEREFROM 有权
标题翻译：低表面GLOSS苯乙烯树脂组合物和低表面胶层和复合材料
公开(公告)号：US20100075165A1
公开(公告)日：2010-03-25
申请号：US12525575
申请日：2008-01-30
申请人： Yun-kyoung Cho , Seon-mo Son , Bong-keun Lee , Tae-bin Ahn , Han-jong You , Sung-tae Ahn
发明人： Yun-kyoung Cho , Seon-mo Son , Bong-keun Lee , Tae-bin Ahn , Han-jong You , Sung-tae Ahn
IPC分类号： C08L25/04 , C08L9/00 , C08L47/00 , C08L33/20 , C08L33/04 , C08L35/00 , C08L33/24 , C08K5/12 , C08K5/52 , C08K5/1515 , C08K3/26 , C08K3/22 , B29C47/06 , B32B27/08
CPC分类号： C08L51/04 , B32B25/14 , B32B27/08 , B32B27/30 , C08J2325/06 , C08L25/06 , C08L25/12 , C08L35/06 , C08L2205/02 , C08L2205/03 , C08L2205/035 , C08L2555/40 , Y10T428/31924 , C08L2666/04 , C08L2666/06 , C08L2666/02
摘要： The present invention relates to a low surface gloss styrene resin composition. The composition of the present invention is composed of (A) 80-99.9 weight % of the basic resin comprising rubber-modified styrene resin and (B) 0.1-20 weight % of syndiotactic polystyrene, the matting agent. The composition also includes (C) hydrogenated styrene block copolymer comprising styrene block and butadiene rubber block as a compatibilizer by 0.1-20 weight % for the total weight of the low surface gloss styrene resin composed of (A) the basic resin and (B) the matting agent and additionally includes (D) a plasticizer by 0.1-30 weight %. The composition of the present invention has excellent weatherability and impact-resistance in addition to the low surface gloss properties, so that it can be applied in various products, particularly exterior products for structures such as sidings and window frames, etc.
摘要翻译：本发明涉及一种低表面光泽的苯乙烯树脂组合物。本发明的组合物由（A）80-99.9重量％的包含橡胶改性苯乙烯树脂的基础树脂和（B）0.1-20重量％的间同立构聚苯乙烯，消光剂组成。该组合物还包含（C）包含苯乙烯嵌段和丁二烯橡胶嵌段作为增容剂的氢化苯乙烯嵌段共聚物，由（A）碱性树脂和（B）组成的低表面光泽苯乙烯树脂的总重量为0.1-20重量％该消光剂还包括（D）0.1-30重量％的增塑剂。本发明的组合物除了具有低的表面光泽特性之外还具有优异的耐候性和抗冲击性，因此可以应用于各种产品，特别是用于诸如边框和窗框等结构的外用产品。

6. 发明授权

US6160393A Low power voltage reference circuit 失效
标题翻译：低功率电压参考电路
公开(公告)号：US6160393A
公开(公告)日：2000-12-12
申请号：US418333
申请日：1999-10-14
申请人： Sung-tae Ahn , Yong-jin Jeon
发明人： Sung-tae Ahn , Yong-jin Jeon
IPC分类号： G05F3/24 , G05F3/20 , G05F3/26 , G05F3/16
CPC分类号： G05F3/262
摘要： A bandgap voltage reference circuit according to the present invention generates a constant reference voltage and is not affected by variations in a power supply voltage and in a manufacturing process. In the bandgap voltage reference circuit, a constant voltage supply unit supplies a constant voltage, a first current mirror mirrors a first current flowing through the constant voltage supply unit to generate a second current, and a second current mirror controlled by the constant voltage from the constant voltage supply unit mirrors the second current to generate a third current and outputs the third current to an output node. A voltage reference unit is connected to the output node to provide a reference voltage to the output node. The voltage reference unit includes at least one PMOS transistor and at least one NMOS transistor which are connected to each other in series or in parallel. Ion implantation processes for determining threshold voltages of the PMOS transistor and the NMOS transistor are simultaneously performed.
摘要翻译：根据本发明的带隙电压参考电路产生恒定的参考电压，并且不受电源电压的变化和制造过程的影响。在带隙电压基准电路中，恒定电压供给单元提供恒定电压，第一电流镜反射流过恒压电源单元的第一电流以产生第二电流，以及由来自所述恒定电压的恒定电压控制的第二电流镜恒压电源单元镜像第二电流以产生第三电流，并将第三电流输出到输出节点。电压参考单元连接到输出节点以向输出节点提供参考电压。电压参考单元包括至少一个PMOS晶体管和至少一个NMOS晶体管，它们彼此串联或并联连接。同时执行用于确定PMOS晶体管和NMOS晶体管的阈值电压的离子注入工艺。

7. 发明授权

US5567645A Device isolation method in integrated circuits 失效
标题翻译：集成电路中的器件隔离方法
公开(公告)号：US5567645A
公开(公告)日：1996-10-22
申请号：US231705
申请日：1994-04-22
申请人： Sung-tae Ahn , Tai-su Park
发明人： Sung-tae Ahn , Tai-su Park
IPC分类号： H01L21/76 , H01L21/316 , H01L21/762
CPC分类号： H01L21/76202
摘要： An improved method for performing a local oxidation of silicon (LOCOS) capable of forming a sufficient thickness of a field oxide film even in narrow isolation regions. After defining the isolation region, a first field oxide film is formed in the isolation region by means of a first field oxidation. A film formed of HTO, LTO or SOG, or a pre-oxide film formed of polysilicon is formed on the resultant product. Then, the film, oxide film or the pre-oxide film is removed by anisotropically etching with a dry etching process or a chemical mechanical process so as to be left only in the isolation region, which after a second field oxidation forms a second field oxide film. According to the present invention, the problems associated with the field oxide film thinning effect usually associated with the conventional LOCOS-series isolation method can be overcome by either making the isolation structure in narrow isolation regions have a total thickness which is equal to that in the wide isolation regions, or by making the former thicker than the latter.
摘要翻译：即使在狭窄的隔离区域中能够形成足够厚度的场氧化物膜的硅（LOCOS）的局部氧化的改进方法。在限定隔离区之后，通过第一场氧化在隔离区中形成第一场氧化物膜。在所得产物上形成由HTO，LTO或SOG形成的膜或由多晶硅形成的预氧化物膜。然后，通过用干蚀刻工艺或化学机械工艺进行各向异性蚀刻除去膜，氧化膜或预氧化物膜，以便仅留在隔离区域中，其在第二场氧化后形成第二场氧化物电影。根据本发明，通常与常规LOCOS系列隔离方法相关的场氧化膜薄化效应相关的问题可以通过使狭窄隔离区域中的隔离结构的总厚度等于或者通过使前者比后者更厚。

8. 发明授权

US5360753A Manufacturing method for a semiconductor isolation region 失效
标题翻译：半导体隔离区域的制造方法
公开(公告)号：US5360753A
公开(公告)日：1994-11-01
申请号：US127155
申请日：1993-09-27
申请人： Tai-seo Park , Yun-gi Kim , Dong-chul Park , Sung-tae Ahn , Byeong-yeol Kim
发明人： Tai-seo Park , Yun-gi Kim , Dong-chul Park , Sung-tae Ahn , Byeong-yeol Kim
IPC分类号： H01L21/762 , H01L21/763 , H01L21/76
CPC分类号： H01L21/76235 , H01L21/76202 , H01L21/7621 , H01L21/76221 , H01L21/763
摘要： In an element isolation method of a semiconductor device which can form an element isolation region having a flat surface without regard to the width of the element isolation region, and whose width is below the resolution limit, an insulating film having an aperture in order to define the element isolation region is formed on the semiconductor wafer, wherein an oxidizable material layer is deposited and then first spacers are formed on the sidewalls of the aperture. Then, a thermal oxide film is formed over the entire semiconductor wafer, excluding a first-spacer-formed region, and the first spacer is removed. The wafer surface is exposed to the lower part of the removed first spacer region, and then the portion of the semiconductor wafer below the exposed region is etched to thereby form a trench. After that, an element isolation region is formed by filling up the trench and removing the insulating film around tile trench. Additionally, a second spacer is formed on the sidewalls of the first spacer so as to further reduce the element isolation region. Accordingly, a highly integrated semiconductor device can be accomplished by forming an element isolation region whose size is below the resolution limit and whereby good element isolation characteristics are provided.
摘要翻译：在能够形成具有平坦表面的元件隔离区域而不考虑元件隔离区域的宽度并且其宽度低于分辨率极限的半导体器件的元件隔离方法中，具有孔径的绝缘膜以便限定元件隔离区形成在半导体晶片上，其中沉积可氧化材料层，然后在孔的侧壁上形成第一间隔物。然后，除了第一间隔物形成区域之外，在整个半导体晶片上形成热氧化膜，并且去除第一间隔物。将晶片表面暴露于去除的第一间隔区域的下部，然后蚀刻暴露区域下方的半导体晶片的部分，从而形成沟槽。之后，通过填充沟槽并去除瓷砖沟槽周围的绝缘膜来形成元件隔离区域。此外，在第一间隔件的侧壁上形成第二间隔件，以进一步减小元件隔离区域。因此，可以通过形成尺寸低于分辨率极限的元件隔离区域并由此提供良好的元件隔离特性来实现高度集成的半导体器件。

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