专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08085367B2 Liquid crystal display device having high brightness 有权
标题翻译：具有高亮度的液晶显示装置
公开(公告)号：US08085367B2
公开(公告)日：2011-12-27
申请号：US11148566
申请日：2005-06-09
申请人： Sung-Ki Kim , Yong-Jin Cho , Hae-Yeol Kim
发明人： Sung-Ki Kim , Yong-Jin Cho , Hae-Yeol Kim
IPC分类号： G02F1/1335 , G02F1/1333
CPC分类号： G02F1/133615 , G02F1/133512
摘要： A liquid crystal display device includes: a liquid crystal panel; a backlight assembly for irradiating light onto the liquid crystal panel; and a reflection layer between the liquid crystal panel and the backlight assembly for increasing an amount of light incident onto the liquid crystal panel.
摘要翻译：液晶显示装置包括：液晶面板; 用于将光照射到液晶面板上的背光组件; 以及液晶面板和背光组件之间的反射层，用于增加入射到液晶面板上的光量。

2. 发明申请

US20060092347A1 Liquid crystal display device having high brightness 有权
标题翻译：具有高亮度的液晶显示装置
公开(公告)号：US20060092347A1
公开(公告)日：2006-05-04
申请号：US11148566
申请日：2005-06-09
申请人： Sung-Ki Kim , Yong-Jin Cho , Hae-Yeol Kim
发明人： Sung-Ki Kim , Yong-Jin Cho , Hae-Yeol Kim
IPC分类号： G02F1/1335
CPC分类号： G02F1/133615 , G02F1/133512
摘要： A liquid crystal display device includes: a liquid crystal panel; a backlight assembly for irradiating light onto the liquid crystal panel; and a reflection layer between the liquid crystal panel and the backlight assembly for increasing an amount of light incident onto the liquid crystal panel.
摘要翻译：液晶显示装置包括：液晶面板; 用于将光照射到液晶面板上的背光组件; 以及液晶面板和背光组件之间的反射层，用于增加入射到液晶面板上的光量。

3. 发明授权

US07132801B2 Dual panel-type organic electroluminescent device and method for fabricating the same 有权
标题翻译：双面板型有机电致发光器件及其制造方法
公开(公告)号：US07132801B2
公开(公告)日：2006-11-07
申请号：US11011778
申请日：2004-12-15
申请人： Jae-Yong Park , Sung-Ki Kim , Hae-Yeol Kim
发明人： Jae-Yong Park , Sung-Ki Kim , Hae-Yeol Kim
IPC分类号： G09G3/10
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/3253
摘要： A dual panel-type active matrix organic electroluminescent device includes: first and second substrates spaced apart from each other; a driving thin film transistor on an inner surface of the first substrate; a connection electrode layer connected to the driving thin film transistor and formed of a first conductive material having a first hardness; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode connected to the connection electrode layer and formed of a second conductive material having a second hardness, wherein the first hardness is different from the second hardness.
摘要翻译：双面板型有源矩阵有机电致发光器件包括：彼此间隔开的第一和第二衬底; 在所述第一基板的内表面上的驱动薄膜晶体管; 连接电极层，连接到所述驱动薄膜晶体管并由具有第一硬度的第一导电材料形成; 在所述第二基板的内表面上的第一电极; 第一电极上的有机电致发光层; 以及在所述有机电致发光层上的第二电极，所述第二电极连接到所述连接电极层，并且由具有第二硬度的第二导电材料形成，其中所述第一硬度与所述第二硬度不同。

4. 发明申请

US20050161740A1 Dual panel-type organic electroluminescent device and method for fabricating the same 有权
标题翻译：双面板型有机电致发光器件及其制造方法
公开(公告)号：US20050161740A1
公开(公告)日：2005-07-28
申请号：US11011778
申请日：2004-12-15
申请人： Jae-Yong Park , Sung-Ki Kim , Hae-Yeol Kim
发明人： Jae-Yong Park , Sung-Ki Kim , Hae-Yeol Kim
IPC分类号： H01L21/00 , H01L21/77 , H01L21/84 , H01L27/01 , H01L27/12 , H01L27/32 , H05B33/08 , H05B33/10 , H05B33/12 , H05B33/22 , H05B33/26
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/3253
摘要： A dual panel-type active matrix organic electroluminescent device includes: first and second substrates spaced apart from each other; a driving thin film transistor on an inner surface of the first substrate; a connection electrode layer connected to the driving thin film transistor and formed of a first conductive material having a first hardness; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode connected to the connection electrode layer and formed of a second conductive material having a second hardness, wherein the first hardness is different from the second hardness.
摘要翻译：双面板型有源矩阵有机电致发光器件包括：彼此间隔开的第一和第二衬底; 在所述第一基板的内表面上的驱动薄膜晶体管; 连接电极层，连接到所述驱动薄膜晶体管并由具有第一硬度的第一导电材料形成; 在所述第二基板的内表面上的第一电极; 第一电极上的有机电致发光层; 以及在所述有机电致发光层上的第二电极，所述第二电极连接到所述连接电极层，并且由具有第二硬度的第二导电材料形成，其中所述第一硬度与所述第二硬度不同。

5. 发明申请

US20100245225A1 DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置的驱动方法
公开(公告)号：US20100245225A1
公开(公告)日：2010-09-30
申请号：US12568128
申请日：2009-09-28
申请人： Hyung-Nyuck CHO , Chang Il Ryoo , Hae-Yeol Kim
发明人： Hyung-Nyuck CHO , Chang Il Ryoo , Hae-Yeol Kim
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3614 , G09G2310/061 , G09G2310/062 , G09G2320/0233
摘要： A driving method of a liquid crystal display device includes steps of providing image data to a liquid crystal panel each frame, providing an image-data gate driving signal to the liquid crystal panel and inputting the image data to the liquid crystal panel, providing black data to the liquid crystal panel, providing a black-data gate driving signal to the liquid crystal panel and inputting the black data to the liquid crystal panel, and delaying the black-data gate driving signal when each frame starts.
摘要翻译：液晶显示装置的驱动方法包括以下步骤：向每个帧的液晶面板提供图像数据，向液晶面板提供图像数据门驱动信号，并将图像数据输入到液晶面板，提供黑色数据向液晶面板提供黑色数据门驱动信号到液晶面板，并将黑色数据输入到液晶面板，并且在每帧开始时延迟黑色数据门驱动信号。

6. 发明授权

US07060544B2 Fabricating method of thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07060544B2
公开(公告)日：2006-06-13
申请号：US10317217
申请日：2002-12-12
申请人： Hae-Yeol Kim , Jong-Uk Bae , Binn Kim
发明人： Hae-Yeol Kim , Jong-Uk Bae , Binn Kim
IPC分类号： H01L21/283 , H01L21/38
CPC分类号： H01L29/78618 , H01L29/458 , H01L29/66757 , H01L29/78675
摘要： A fabricating method of a thin film transistor includes forming an active layer of polycrystalline silicon, forming a first insulating layer on the active layer, forming a gate electrode on the first insulating layer over the active layer, doping side portions of the active layer with impurities, applying a small amount of metal to the side portions of the active layer and activating the side portions of the active layer such that the small amount of metal is adsorbed into the active layer.
摘要翻译：一种薄膜晶体管的制造方法，包括形成多晶硅的有源层，在有源层上形成第一绝缘层，在有源层上的第一绝缘层上形成栅电极，在有源层的杂质侧掺杂杂质在有源层的侧面施加少量的金属，使有源层的侧面部分活化，使少量的金属吸附到有源层中。

7. 发明授权

US06849525B2 Methods for forming polycrystalline silicon layer and fabricating polycrystalline silicon thin film transistor 失效
标题翻译：形成多晶硅层的方法和制造多晶硅薄膜晶体管
公开(公告)号：US06849525B2
公开(公告)日：2005-02-01
申请号：US10465786
申请日：2003-06-20
申请人： Binn Kim , Hae-Yeol Kim , Jong-Uk Bae
发明人： Binn Kim , Hae-Yeol Kim , Jong-Uk Bae
IPC分类号： C30B1/02 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/30
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L29/66757 , H01L29/78675
摘要： A method of forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; depositing a catalyst metal on the amorphous silicon layer; disposing first and second electrodes contacting the amorphous silicon layer along a first direction; heating the amorphous silicon layer under a first temperature and simultaneously applying a first voltage to the first and second electrodes to form a first crystallized amorphous silicon layer; disposing third and fourth electrodes contacting the first crystallized amorphous silicon layer along a second direction, the second direction being different from the first direction; and heating the first crystallized amorphous silicon layer under a second temperature and simultaneously applying a second voltage to the third and fourth electrodes to form a secondly crystallized amorphous silicon layer.
摘要翻译：形成多晶硅层的方法包括：在基板上形成非晶硅层; 在所述非晶硅层上沉积催化剂金属; 沿第一方向布置与非晶硅层接触的第一和第二电极; 在第一温度下加热所述非晶硅层并且同时向所述第一和第二电极施加第一电压以形成第一结晶非晶硅层; 使第三和第四电极沿着第二方向接触第一结晶非晶硅层，第二方向不同于第一方向; 以及在第二温度下加热所述第一结晶非晶硅层并且同时向所述第三和第四电极施加第二电压，以形成第二结晶非晶硅层。

8. 发明授权

US08330696B2 Driving method of liquid crystal display device 有权
标题翻译：液晶显示装置的驱动方法
公开(公告)号：US08330696B2
公开(公告)日：2012-12-11
申请号：US12568128
申请日：2009-09-28
申请人： Hyung-Nyuck Cho , Chang Il Ryoo , Hae-Yeol Kim
发明人： Hyung-Nyuck Cho , Chang Il Ryoo , Hae-Yeol Kim
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3614 , G09G2310/061 , G09G2310/062 , G09G2320/0233
摘要： A driving method of a liquid crystal display device includes steps of providing image data to a liquid crystal panel each frame, providing an image-data gate driving signal to the liquid crystal panel and inputting the image data to the liquid crystal panel, providing black data to the liquid crystal panel, providing a black-data gate driving signal to the liquid crystal panel and inputting the black data to the liquid crystal panel, and delaying the black-data gate driving signal when each frame starts.
摘要翻译：液晶显示装置的驱动方法包括以下步骤：向每个帧的液晶面板提供图像数据，向液晶面板提供图像数据门驱动信号，并将图像数据输入到液晶面板，提供黑色数据向液晶面板提供黑色数据门驱动信号到液晶面板，并将黑色数据输入到液晶面板，并且在每帧开始时延迟黑色数据门驱动信号。

9. 发明授权

US06727122B2 Method of fabricating polysilicon thin film transistor 有权
标题翻译：制造多晶硅薄膜晶体管的方法
公开(公告)号：US06727122B2
公开(公告)日：2004-04-27
申请号：US10310975
申请日：2002-12-06
申请人： Hyun-Sik Seo , Binn Kim , Jong-Uk Bae , Hae-Yeol Kim
发明人： Hyun-Sik Seo , Binn Kim , Jong-Uk Bae , Hae-Yeol Kim
IPC分类号： H01L2184
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78603 , H01L29/78609 , H01L29/78675 , Y10S260/35
摘要： A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, forming an island pattern on the polycrystalline silicon layer, thereby defining an active region underneath in the polycrystalline silicon layer, applying n-type ions to the polycrystalline silicon layer and then heat-treating the polycrystalline silicon layer to remove the catalytic metal from the active region underneath the island pattern, patterning the polycrystalline silicon layer using the island pattern as a mask to form an active layer and to expose a surface of the adjacent buffer layer, removing the island pattern from the active layer using an etchant, and etching the exposed surface of the buffer layer when removing the island pattern.
摘要翻译：提供一种形成用于薄膜晶体管的多晶硅有源层的方法。该方法包括在衬底上形成缓冲层，在缓冲层上形成非晶硅层，向非晶硅层的表面施加催化金属，使其上具有催化金属的非晶硅层结晶成多晶硅层，在所述多晶硅层上形成岛状图案，从而在所述多晶硅层中限定下面的有源区，向所述多晶硅层施加n型离子，然后热处理所述多晶硅层以从所述活性区域除去所述催化金属在岛状图案之下，使用岛状图案作为掩模来图案化多晶硅层以形成有源层并暴露相邻缓冲层的表面，使用蚀刻剂从活性层除去岛状图案，并蚀刻暴露表面的去除岛图案时的缓冲层。

10. 发明授权

US06500736B2 Crystallization method of amorphous silicon 失效
标题翻译：非晶硅的结晶方法
公开(公告)号：US06500736B2
公开(公告)日：2002-12-31
申请号：US09998338
申请日：2001-12-03
申请人： Hae-Yeol Kim , Binn Kim , Joon-young Yang , Sang-Soo Han
发明人： Hae-Yeol Kim , Binn Kim , Joon-young Yang , Sang-Soo Han
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： A method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.
摘要翻译：使用金属催化剂使非晶硅结晶的方法。更具体地说，该方法包括在衬底上形成非晶硅层，在非晶硅膜上形成多个金属簇，在包括金属簇的非晶硅层上形成隔热层，在电极上设置一对电极绝缘层，同时施加热处理和电压以使非晶硅结晶，以及从基板去除包括电极的隔热层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式