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1. 发明授权

US06727122B2 Method of fabricating polysilicon thin film transistor 有权
标题翻译：制造多晶硅薄膜晶体管的方法
公开(公告)号：US06727122B2
公开(公告)日：2004-04-27
申请号：US10310975
申请日：2002-12-06
申请人： Hyun-Sik Seo , Binn Kim , Jong-Uk Bae , Hae-Yeol Kim
发明人： Hyun-Sik Seo , Binn Kim , Jong-Uk Bae , Hae-Yeol Kim
IPC分类号： H01L2184
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78603 , H01L29/78609 , H01L29/78675 , Y10S260/35
摘要： A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, forming an island pattern on the polycrystalline silicon layer, thereby defining an active region underneath in the polycrystalline silicon layer, applying n-type ions to the polycrystalline silicon layer and then heat-treating the polycrystalline silicon layer to remove the catalytic metal from the active region underneath the island pattern, patterning the polycrystalline silicon layer using the island pattern as a mask to form an active layer and to expose a surface of the adjacent buffer layer, removing the island pattern from the active layer using an etchant, and etching the exposed surface of the buffer layer when removing the island pattern.
摘要翻译：提供一种形成用于薄膜晶体管的多晶硅有源层的方法。该方法包括在衬底上形成缓冲层，在缓冲层上形成非晶硅层，向非晶硅层的表面施加催化金属，使其上具有催化金属的非晶硅层结晶成多晶硅层，在所述多晶硅层上形成岛状图案，从而在所述多晶硅层中限定下面的有源区，向所述多晶硅层施加n型离子，然后热处理所述多晶硅层以从所述活性区域除去所述催化金属在岛状图案之下，使用岛状图案作为掩模来图案化多晶硅层以形成有源层并暴露相邻缓冲层的表面，使用蚀刻剂从活性层除去岛状图案，并蚀刻暴露表面的去除岛图案时的缓冲层。

2. 发明授权

US07060544B2 Fabricating method of thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07060544B2
公开(公告)日：2006-06-13
申请号：US10317217
申请日：2002-12-12
申请人： Hae-Yeol Kim , Jong-Uk Bae , Binn Kim
发明人： Hae-Yeol Kim , Jong-Uk Bae , Binn Kim
IPC分类号： H01L21/283 , H01L21/38
CPC分类号： H01L29/78618 , H01L29/458 , H01L29/66757 , H01L29/78675
摘要： A fabricating method of a thin film transistor includes forming an active layer of polycrystalline silicon, forming a first insulating layer on the active layer, forming a gate electrode on the first insulating layer over the active layer, doping side portions of the active layer with impurities, applying a small amount of metal to the side portions of the active layer and activating the side portions of the active layer such that the small amount of metal is adsorbed into the active layer.
摘要翻译：一种薄膜晶体管的制造方法，包括形成多晶硅的有源层，在有源层上形成第一绝缘层，在有源层上的第一绝缘层上形成栅电极，在有源层的杂质侧掺杂杂质在有源层的侧面施加少量的金属，使有源层的侧面部分活化，使少量的金属吸附到有源层中。

3. 发明授权

US06849525B2 Methods for forming polycrystalline silicon layer and fabricating polycrystalline silicon thin film transistor 失效
标题翻译：形成多晶硅层的方法和制造多晶硅薄膜晶体管
公开(公告)号：US06849525B2
公开(公告)日：2005-02-01
申请号：US10465786
申请日：2003-06-20
申请人： Binn Kim , Hae-Yeol Kim , Jong-Uk Bae
发明人： Binn Kim , Hae-Yeol Kim , Jong-Uk Bae
IPC分类号： C30B1/02 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/30
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L29/66757 , H01L29/78675
摘要： A method of forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; depositing a catalyst metal on the amorphous silicon layer; disposing first and second electrodes contacting the amorphous silicon layer along a first direction; heating the amorphous silicon layer under a first temperature and simultaneously applying a first voltage to the first and second electrodes to form a first crystallized amorphous silicon layer; disposing third and fourth electrodes contacting the first crystallized amorphous silicon layer along a second direction, the second direction being different from the first direction; and heating the first crystallized amorphous silicon layer under a second temperature and simultaneously applying a second voltage to the third and fourth electrodes to form a secondly crystallized amorphous silicon layer.
摘要翻译：形成多晶硅层的方法包括：在基板上形成非晶硅层; 在所述非晶硅层上沉积催化剂金属; 沿第一方向布置与非晶硅层接触的第一和第二电极; 在第一温度下加热所述非晶硅层并且同时向所述第一和第二电极施加第一电压以形成第一结晶非晶硅层; 使第三和第四电极沿着第二方向接触第一结晶非晶硅层，第二方向不同于第一方向; 以及在第二温度下加热所述第一结晶非晶硅层并且同时向所述第三和第四电极施加第二电压，以形成第二结晶非晶硅层。

4. 发明授权

US07413966B2 Method of fabricating polysilicon thin film transistor with catalyst 有权
标题翻译：用催化剂制造多晶硅薄膜晶体管的方法
公开(公告)号：US07413966B2
公开(公告)日：2008-08-19
申请号：US10310964
申请日：2002-12-06
申请人： Binn Kim , Jong-Uk Bae , Hae-Yeol Kim
发明人： Binn Kim , Jong-Uk Bae , Hae-Yeol Kim
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78603 , H01L29/78609 , H01L29/78675 , Y10S260/35
摘要： A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, annealing the polycrystalline silicon layer in an N2 gas atmosphere to stabilize the polycrystalline silicon layer, etching a surface of the polycrystalline silicon layer using an etchant, and patterning the polycrystalline silicon layer to form an island-shaped active layer.
摘要翻译：提供一种形成用于薄膜晶体管的多晶硅有源层的方法。该方法包括在衬底上形成缓冲层，在缓冲层上形成非晶硅层，向非晶硅层的表面施加催化金属，使其上具有催化金属的非晶硅层结晶成多晶硅层，在N 2气体气氛中退火多晶硅层以稳定多晶硅层，使用蚀刻剂蚀刻多晶硅层的表面，并构图多晶硅层以形成岛状活性物质层。

5. 发明授权

US06695955B2 Method of forming polycrystalline silicon for liquid crystal display device 有权
标题翻译：液晶显示装置多晶硅形成方法
公开(公告)号：US06695955B2
公开(公告)日：2004-02-24
申请号：US10140288
申请日：2002-05-08
申请人： Kwang Jo Hwang , Binn Kim , Hae Yeol Kim , Jong Uk Bae
发明人： Kwang Jo Hwang , Binn Kim , Hae Yeol Kim , Jong Uk Bae
IPC分类号： C23C1434
CPC分类号： H01L21/02672 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.
摘要翻译：在本发明中公开了一种用于液晶显示装置的多晶硅形成方法。该方法包括在衬底上形成非晶硅层，在非晶硅层上形成多个催化金属簇，形成与非晶硅层相邻的催化金属吸气层，并将包含非晶硅层的衬底热处理为将非晶硅层转变成多晶硅层，其中未反应的催化金属簇沿垂直于衬底的方向迁移到催化金属吸气层。

6. 发明授权

US07529333B2 Shift register 有权
标题翻译：移位寄存器
公开(公告)号：US07529333B2
公开(公告)日：2009-05-05
申请号：US11586642
申请日：2006-10-26
申请人： Binn Kim , Hae Yeol Kim , Hyung Nyuck Cho , Soo Young Yoon , Seung Chan Choi , Min Doo Chun , Yong Ho Jang
发明人： Binn Kim , Hae Yeol Kim , Hyung Nyuck Cho , Soo Young Yoon , Seung Chan Choi , Min Doo Chun , Yong Ho Jang
IPC分类号： G11C19/00
CPC分类号： G11C19/28
摘要： A shift register includes first and second stages for sequentially outputting scan pulses to drive first and second gate lines. One of the first and second stages includes a pull-up switching device connected to an enabling node of the one of the first and second stages; a first pull-down switching device connected to a first disabling node of the one of the first and second stages; a second pull-down switching device connected to a second disabling node of the one of the first and second stages; and a node controller. The node controller of the first stage controls the logic state of each of the enabling node of the first stage, the first disabling node of the first stage and the first disabling node of the second stage. The node controller of the second stage controls the logic state of each of the enabling node of the second stage, the second disabling node of the second stage and the second disabling node of the first stage.
摘要翻译：移位寄存器包括用于顺序地输出扫描脉冲以驱动第一和第二栅极线的第一和第二级。第一级和第二级之一包括连接到第一级和第二级之一的使能节点的上拉开关器件; 连接到第一和第二级中的一个的第一禁用节点的第一下拉开关装置; 连接到第一和第二级中的一个的第二禁用节点的第二下拉开关装置; 和节点控制器。第一级的节点控制器控制第一级的使能节点，第一级的第一禁用节点和第二级的第一禁用节点的每个的逻辑状态。第二级的节点控制器控制第二级的使能节点，第二级的第二禁用节点和第一级的第二禁用节点的每个的逻辑状态。

7. 发明授权

US06500736B2 Crystallization method of amorphous silicon 失效
标题翻译：非晶硅的结晶方法
公开(公告)号：US06500736B2
公开(公告)日：2002-12-31
申请号：US09998338
申请日：2001-12-03
申请人： Hae-Yeol Kim , Binn Kim , Joon-young Yang , Sang-Soo Han
发明人： Hae-Yeol Kim , Binn Kim , Joon-young Yang , Sang-Soo Han
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： A method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.
摘要翻译：使用金属催化剂使非晶硅结晶的方法。更具体地说，该方法包括在衬底上形成非晶硅层，在非晶硅膜上形成多个金属簇，在包括金属簇的非晶硅层上形成隔热层，在电极上设置一对电极绝缘层，同时施加热处理和电压以使非晶硅结晶，以及从基板去除包括电极的隔热层。

8. 发明授权

US06607949B2 Method for fabricating polysilicon thin film transistor with improved electrical characteristics 有权
标题翻译：制造具有改善的电气特性的多晶硅薄膜晶体管的方法
公开(公告)号：US06607949B2
公开(公告)日：2003-08-19
申请号：US09998311
申请日：2001-12-03
申请人： Binn Kim , Hae Yeol Kim , Dae Hyun Nam
发明人： Binn Kim , Hae Yeol Kim , Dae Hyun Nam
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.
摘要翻译：一种制造薄膜晶体管的方法，包括在衬底上形成缓冲层，在缓冲层上形成第一非晶硅层，在第一非晶硅层上形成多个金属簇，在金属上形成第二非晶硅层包括第一非晶硅层的簇，并且同时施加热处理和电场以使第一和第二非晶硅层结晶。

9. 发明申请

US20080129676A1 Liquid crystal display device and method of driving the same 审中-公开
标题翻译：液晶显示装置及其驱动方法
公开(公告)号：US20080129676A1
公开(公告)日：2008-06-05
申请号：US11984823
申请日：2007-11-21
申请人： Binn Kim , Hae Yeol Kim , Su Hwan Moon , Seung Chan Choi
发明人： Binn Kim , Hae Yeol Kim , Su Hwan Moon , Seung Chan Choi
IPC分类号： G09G3/36
CPC分类号： G09G3/3614 , G09G3/20 , G09G2300/0443 , G09G2310/0297 , G09G2330/021
摘要： A liquid crystal display device and a method of driving the same is disclosed that can decrease the number of data lines used therein, and can improve the picture quality. The liquid crystal display device includes a display area including a plurality of pixel cells formed in respective regions defined by a plurality of gate and data lines, the pixel cells along a data-line direction provided with at least three colors repetitively arranged by turns, and the pixel cells along a gate-line direction provided with the same color, wherein polarity of video signal is inverted every 2N pixel cells (‘N’ is an integer) along the data-line direction.
摘要翻译：公开了一种液晶显示装置及其驱动方法，其可以减少其中使用的数据线的数量，并且可以提高图像质量。液晶显示装置包括：显示区域，包括形成在由多个栅极和数据线限定的各个区域中的多个像素单元，沿着数据线方向的像素单元，其具有重复排列的至少三种颜色;以及具有相同颜色的沿着栅极线方向的像素单元，其中视频信号的极性沿着数据线方向每2N个像素单元（'N'是整数）反转。

10. 发明授权

US06841433B2 Method of fabricating polysilicon thin film transistor 有权
标题翻译：制造多晶硅薄膜晶体管的方法
公开(公告)号：US06841433B2
公开(公告)日：2005-01-11
申请号：US10310965
申请日：2002-12-06
申请人： Hyun-Sik Seo , Binn Kim , Jong-Uk Bae
发明人： Hyun-Sik Seo , Binn Kim , Jong-Uk Bae
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78603 , H01L29/78609 , H01L29/78675 , Y10S260/35
摘要： A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provide. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, forming an island pattern on the polycrystalline silicon layer, thereby defining an active region underneath in the polycrystalline silicon layer, applying n-type ions to the polycrystalline silicon layer and then heat-treating the polycrystalline silicon layer to remove the catalytic metal from the active region underneath the island pattern, and patterning the polycrystalline silicon layer using the island pattern as a mask to form an active layer.
摘要翻译：提供一种形成用于薄膜晶体管的多晶硅有源层的方法。该方法包括在衬底上形成缓冲层，在缓冲层上形成非晶硅层，向非晶硅层的表面施加催化金属，使其上具有催化金属的非晶硅层结晶成多晶硅层，在所述多晶硅层上形成岛状图案，从而在所述多晶硅层中限定下面的有源区，向所述多晶硅层施加n型离子，然后热处理所述多晶硅层以从所述活性区域除去所述催化金属在岛状图案下方，并且使用岛状图案作为掩模来构图多晶硅层以形成有源层。

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