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1. 发明授权

US09378831B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US09378831B2
公开(公告)日：2016-06-28
申请号：US14820895
申请日：2015-08-07
申请人： Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/04 , G11C16/14 , G11C16/16 , G11C16/08 , G11C16/12 , G11C16/26 , G11C16/34 , H01L27/115
CPC分类号： G11C16/14 , G11C16/0466 , G11C16/0475 , G11C16/0483 , G11C16/08 , G11C16/12 , G11C16/16 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
摘要翻译：非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统。在操作方法中，连接到位线的第一串的接地选择线可以浮置。可以将擦除禁止电压施加到连接到位线的第二串的接地选择线。可以将擦除操作电压施加到第一和第二串。

2. 发明授权

US09747995B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US09747995B2
公开(公告)日：2017-08-29
申请号：US15176269
申请日：2016-06-08
申请人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/10 , G11C16/34 , G11C16/04 , H01L27/11582 , G11C16/08 , G11C16/12 , G11C16/14 , G11C16/26 , H01L27/1157
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

3. 发明授权

US09390803B2 Non-volatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US09390803B2
公开(公告)日：2016-07-12
申请号：US14849029
申请日：2015-09-09
申请人： Sun-il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sun-il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/10 , G11C16/12 , G11C16/04 , G11C16/34 , G11C16/08 , G11C16/14 , G11C16/26 , H01L27/115
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

4. 发明授权

US10199116B2 Non-volatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US10199116B2
公开(公告)日：2019-02-05
申请号：US15664303
申请日：2017-07-31
申请人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/10 , G11C16/34 , G11C16/04 , H01L27/11582 , G11C16/08 , G11C16/12 , G11C16/14 , G11C16/26 , H01L27/1157
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

5. 发明授权

US08427878B2 Non-volatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US08427878B2
公开(公告)日：2013-04-23
申请号：US12986798
申请日：2011-01-07
申请人： Sunil Shim , Jaehoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sunil Shim , Jaehoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/04 , G11C16/06 , G11C8/00
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

6. 发明申请

US20110199833A1 NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US20110199833A1
公开(公告)日：2011-08-18
申请号：US12986798
申请日：2011-01-07
申请人： Sunil Shim , Jaehoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sunil Shim , Jaehoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/08 , G11C16/04
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
摘要翻译：非易失性存储器件，其操作方法和包括其的存储器系统。非易失性存储器件可以包括存储单元阵列和字线驱动器。存储单元阵列可以包括多个存储单元。字线驱动器可以被配置为分别将字线电压施加到连接到多个存储器单元的多个字线。字线电压的大小可以根据多个字线的位置来确定。

7. 发明申请

US20160042792A1 NONVOLATILE MEMORY DEVICES AND DRIVING METHODS THEREOF 审中-公开
公开(公告)号：US20160042792A1
公开(公告)日：2016-02-11
申请号：US14887595
申请日：2015-10-20
申请人： Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
发明人： Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
IPC分类号： G11C16/04 , G11C16/08
CPC分类号： G11C16/0483 , G11C16/0466 , G11C16/08 , G11C16/24 , H01L23/528 , H01L27/11565 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

8. 发明授权

US08743604B2 Nonvolatile memory devices having improved read reliability 有权
标题翻译：具有改善的读取可靠性的非易失性存储器件
公开(公告)号：US08743604B2
公开(公告)日：2014-06-03
申请号：US13009979
申请日：2011-01-20
申请人： Donghyuk Chae
发明人： Donghyuk Chae
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5642 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C16/0483 , G11C16/3454 , G11C2211/5646
摘要： Memory systems include at least one nonvolatile memory array having a plurality of rows of nonvolatile multi-bit (e.g., N-bit, where N>2) memory cells therein. A control circuit is also provided, which is electrically coupled to the nonvolatile memory array. The control circuit is configured to program at least two pages of data into a first row of nonvolatile multi-bit memory cells in the nonvolatile memory array using a first sequence of read voltages to verify accuracy of the data stored within the first row. The control circuit is also configured to read the at least two pages of data from the first row using a second sequence of read voltages that is different from the first sequence of read voltages. Each of the read voltages in the first sequence of read voltages may be equivalent in magnitude to a corresponding read voltage in the second sequence of read voltages.
摘要翻译：存储器系统包括至少一个非易失性存储器阵列，其中具有多行非易失性多位（例如N位，其中N≥2）个存储单元。还提供了一种控制电路，其电耦合到非易失性存储器阵列。控制电路被配置为使用第一读取电压序列将至少两页数据编程到非易失性存储器阵列中的第一行非易失性多位存储器单元中，以验证存储在第一行内的数据的精度。控制电路还被配置为使用与第一读取电压序列不同的第二读取电压序列从第一行中读取至少两页的数据。第一读取电压序列中的每个读取电压的幅度可以在第二读取电压序列中与相应的读取电压相等。

9. 发明授权

US08243514B2 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same 有权
标题翻译：非易失性存储器件和系统，包括使用修改的读取电压的多电平单元及其操作方法
公开(公告)号：US08243514B2
公开(公告)日：2012-08-14
申请号：US13081747
申请日：2011-04-07
申请人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
发明人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3404
摘要： Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
摘要翻译：操作多级非易失性存储器件的方法可以包括访问与读取电压相关联的存储在器件中的数据，并修改施加到多个多级非易失性存储器单元的读取电压以区分状态响应于对多级非易失性存储器件的读取操作，由单元存储。还公开了相关的装置和系统。

10. 发明申请

US20110194357A1 NONVOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US20110194357A1
公开(公告)日：2011-08-11
申请号：US12985695
申请日：2011-01-06
申请人： Jinman Han , Donghyuk Chae
发明人： Jinman Han , Donghyuk Chae
IPC分类号： G11C16/04
CPC分类号： G11C16/16 , G11C16/0483 , G11C16/08 , G11C16/14 , G11C16/26
摘要： Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
摘要翻译：非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统。在操作方法中，连接到位线的第一串的接地选择线可以浮置。可以将擦除禁止电压施加到连接到位线的第二串的接地选择线。可以将擦除操作电压施加到第一和第二串。

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