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1. 发明专利

JP2015000263A 加熱用調理器审中-公开
公开(公告)号：JP2015000263A
公开(公告)日：2015-01-05
申请号：JP2013127056
申请日：2013-06-17
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： ITAKURA KATSUHIRO , KITABAYASHI KEIJI , NIIMA KENJI , MIKUMO AKIRA , NAKADA HIROHIKO
IPC分类号： A47J37/06
摘要：【課題】調理プレートの載置面のどのエリアで加熱調理を行っても焼きむらがなく均質に加熱調理できる上、すばやく昇降温させることが可能な加熱調理器を提供する。【解決手段】食材Fの加熱調理器10であって、食材Fを調理する調理面11aを有する調理プレート11と、調理プレート11を支持する支持プレート12と、調理プレート11と支持プレート12との間に設けられた少なくとも1層の発熱部13とを有し、調理プレート11及び支持プレート12の内の一方は他方に比べて熱伝導率が高く且つヤング率が低い。この加熱調理器10は、調理プレート11を冷却する冷却プレート20を具備してもよい。【選択図】図1

2. 发明专利

JP2008004926A Wafer holder, method for producing the same, and semiconductor production apparatus 审中-公开
标题翻译：卷取机，其制造方法和半导体生产装置
公开(公告)号：JP2008004926A
公开(公告)日：2008-01-10
申请号：JP2007132295
申请日：2007-05-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI , NIIMA KENJI , NAKADA HIROHIKO
IPC分类号： H01L21/683 , C23C16/458 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder applicable to processing of a wafer at a temperature not higher than normal temperature and especially suitable for use in a CVD system. SOLUTION: A wafer holder 1 having a wafer mounting surface is composed of a ceramic, and internally has a channel 3 which passes a refrigerant for cooling the wafer holder 1, and is preferably further equipped with an electrode 2 for generating high frequency wave. The wafer holder 1 can be produced by forming the channel 3 on one sheet of a ceramic substrate, bonding at least another sheet of a ceramic substrate to the one ceramic substrate so as to cover the channel 3, and further bonding a ceramic substrate, on which the electrode 2 for generating high frequency wave is formed, preferably. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供适用于在不高于常温的温度下处理晶片的晶片保持器，并且特别适用于CVD系统。解决方案：具有晶片安装表面的晶片保持器1由陶瓷构成，并且内部具有通过用于冷却晶片保持器1的制冷剂的通道3，并且优选地还具有用于产生高频的电极2 波。晶片保持器1可以通过在一片陶瓷基板上形成通道3而制成，将陶瓷基板的至少另一片接合到一个陶瓷基板上以覆盖通道3，并进一步将陶瓷基板接合在优选形成用于产生高频波的电极2。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007036093A Wafer holder and wafer prober equipped with wafer holder 有权
标题翻译： WAFER HOLDER和WAFER探头配有WAFER HOLDER
公开(公告)号：JP2007036093A
公开(公告)日：2007-02-08
申请号：JP2005220353
申请日：2005-07-29
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NIIMA KENJI , ITAKURA KATSUHIRO , AWAZU TOMOYUKI , NAKADA HIROHIKO
IPC分类号： H01L21/683 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a highly rigid wafer holder for a wafer prober capable of improving positional accuracy, improving soaking performance and rapidly increasing a temperature of a chip or cooling the chip by improving a heat insulation resistance effect. SOLUTION: In the wafer holder 1 having a chuck top 2 and a supporter 4, the supporter 4 consists of an annular tube portion 42 contacting the chuck top 2 and a pedestal portion 41 for supporting the annular tube portion 42. Where the thickness of the chuck top 2 is set at 1, the thickness of the annular tube portion 42 is 0.1-5.0, and the thickness of the pedestal portion 41 is 0.5-10.0. When a columnar body 43 is provided between the annular tube portion 42 and the pedestal portion 41 or between the annular tube portion 42 and the chuck top 2, the total thickness of the columnar body 43 and the annular tube portion 42 is 0.1-5.0, where the thickness of the chuck top 2 is set at 1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于晶片探测器的高刚性晶片保持器，其能够通过提高绝热电阻效应来提高位置精度，提高均匀性，并快速提高芯片的温度或冷却芯片。解决方案：在具有卡盘顶部2和支撑件4的晶片保持器1中，支撑件4包括与卡盘顶部2接触的环形管部分42和用于支撑环形管部分42的基座部分41。卡盘顶部2的厚度设定为1，环形管部分42的厚度为0.1-5.0，底座部分41的厚度为0.5-10.0。当圆柱体43设置在环形管部分42和基座部分41之间或环形管部分42和卡盘顶部2之间时，柱状体43和环形管部分42的总厚度为0.1-5.0，其中卡盘顶部2的厚度设置为1.版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006310374A Wafer holder and exposure system having the same 审中-公开
标题翻译：具有相同的保持器和曝光系统
公开(公告)号：JP2006310374A
公开(公告)日：2006-11-09
申请号：JP2005127980
申请日：2005-04-26
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NIIMA KENJI , NAKADA HIROHIKO , NATSUHARA MASUHIRO
IPC分类号： H01L21/027 , G03F7/20 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder capable of entirely, quickly, and extremely precisely uniformizing the temperature of a placed semiconductor wafer, and also to provide an exposure system that uses the wafer holder and causes no deviation in an exposure position. SOLUTION: The wafer holder comprises: a heating plate 2 having a heating means, such as a film-like/foil-like electrical heating element 9; a cooling plate 3 having a cooling means, such as a coolant passage 7; and a temperature measurement means 4. In this case, the heating and cooling plates 2, 3 are laminated in a direction perpendicular to a wafer placement surface. Preferably, the heating plate 2 is arranged at the side of the wafer placement surface as compared with the cooling plate 3, and a heat-conducting member 8 is provided between the heating and cooling plates 2, 3. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够完全，快速并且极其精确地均匀化放置的半导体晶片的温度的晶片保持器，并且还提供使用晶片保持器并且不会导致曝光偏差的曝光系统位置。解决方案：晶片保持器包括：具有加热装置的加热板2，例如膜状/箔状电加热元件9; 具有诸如冷却剂通道7的冷却装置的冷却板3; 和温度测量装置4.在这种情况下，加热和冷却板2,3在垂直于晶片放置表面的方向上层压。优选地，与冷却板3相比，加热板2布置在晶片放置表面侧，并且在加热和冷却板2,3之间设置导热部件8.版权所有（C））2007，JPO＆INPIT

5. 发明专利

JP2006044980A Aluminum nitride sintered compact 审中-公开
标题翻译：硝酸铝烧结紧凑
公开(公告)号：JP2006044980A
公开(公告)日：2006-02-16
申请号：JP2004227393
申请日：2004-08-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , NIIMA KENJI , NAKADA HIROHIKO
IPC分类号： C04B35/581 , H01L21/683 , H01L23/15 , H05B3/10 , H05B3/20 , H05B3/74
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： PROBLEM TO BE SOLVED: To provide a susceptor excellent in uniformity of temperature distribution by decreasing voids in an aluminum nitride sintered compact as much as possible. SOLUTION: The aluminum nitride sintered compact of the present invention is characterized in that the amounts of bismuth and chlorine contained are controlled each to be a fixed value or less, that is, the content of bismuth is ≤30 ppm and the content of chlorine is ≤100 ppm in the aluminum nitride sintered compact comprising aluminum nitride as a principal component. In this case, preferably a resistance heating element is formed in the aluminum nitride sintered compact, and the aluminum nitride sintered compact is preferably used as a heating component for a semiconductor. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过尽可能减少氮化铝烧结体中的空隙来提供温度分布均匀性优异的基座。解决方案：本发明的氮化铝烧结体的特征在于，将所含的铋和氯的含量控制在一定以下，即铋含量≤30ppm，含量在包含氮化铝作为主要成分的氮化铝烧结体中，氯的含量≤100ppm。在这种情况下，优选在氮化铝烧结体中形成电阻加热元件，优选使用氮化铝烧结体作为半导体的加热元件。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005259917A Ceramics heater for semiconductor manufacturing apparatus 审中-公开
标题翻译：陶瓷加热器用于半导体制造设备
公开(公告)号：JP2005259917A
公开(公告)日：2005-09-22
申请号：JP2004068268
申请日：2004-03-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , NAKADA HIROHIKO , NIIMA KENJI
IPC分类号： H05B3/20 , H01L21/02 , H05B3/10 , H05B3/74
摘要： PROBLEM TO BE SOLVED: To provide a ceramics heater for semiconductor manufacturing apparatus excellent in soaking property.
SOLUTION: The ceramics heater for semiconductor manufacturing apparatus is configured in such a way that a spot facing hole is formed in an article mounting surface of a ceramics heater serving to mount an article to be heated and heating the same, and a supporter for supporting the article is inserted into the spot facing hole. An abutment surface of the supporter is spherical, and the dimension of the supporter is ≤10 mm, and further the inside dimension of the spot facing hole is larger than the dimension of the supporter within the range of from 0.01 mm to 1.0 mm. Since the article is supported on a spherical surface, it is possible to obtain the ceramics heater for semiconductor manufacturing apparatus excellent in the uniformity of a temperature distribution.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种浸渍性优异的半导体制造装置用陶瓷加热装置。解决方案：用于半导体制造装置的陶瓷加热器被构造成在陶瓷加热器的制品安装表面上形成有点对孔，用于安装待加热物品并加热它的加热器用于支撑物品插入面孔。支撑体的邻接面是球形的，并且支撑体的尺寸≤10mm，并且面对孔的内部尺寸进一步大于支撑件的尺寸在0.01mm至1.0mm的范围内。由于制品被支撑在球形表面上，所以可以获得温度分布均匀性优异的用于半导体制造装置的陶瓷加热器。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005229043A Heater unit and equipment provided therewith 审中-公开
标题翻译：加热器及其设备
公开(公告)号：JP2005229043A
公开(公告)日：2005-08-25
申请号：JP2004038318
申请日：2004-02-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NIIMA KENJI , NAKADA HIROHIKO , NATSUHARA MASUHIRO
IPC分类号： H05B3/20 , C23C14/50 , C23C16/00 , C23C16/458 , H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/68 , H01L21/683 , H05B3/00 , H05B3/10 , H05B3/74
CPC分类号： C23C16/4585 , C23C14/50 , C23C16/4581
摘要： PROBLEM TO BE SOLVED: To provide a heater unit with an improved evenness of heat generation on a heater substrate and to provide equipment installed on this heater unit. SOLUTION: This heater unit 1 consists of a heater substrate 2 for mounting and heating the object S and a container 3 for covering the heater substrate 2, the container 3 at least covers the side of the heater substrate 2 that holds the object to be heated, and the difference is 2.2 mm or smaller in between the maximum and minimum distance values in the perimeter between the side of the heater substrate 2 and the inner surface of the facing container 3. When a cooling block is provided, up to the sides of the cooling block is to be covered. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种加热器单元，其在加热器基板上具有改善的发热均匀度并提供安装在该加热器单元上的设备。解决方案：该加热器单元1由用于安装和加热物体S的加热器基板2和用于覆盖加热器基板2的容器3组成，容器3至少覆盖保持物体的加热器基板2的侧面被加热，并且在加热器基板2的一侧和面向容器3的内表面之间的周边的最大和最小距离值之间的差为2.2mm或更小。当提供冷却块时，直到冷却块的侧面将被覆盖。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2009218420A Wafer holding body, and semiconductor manufacturing apparatus 有权
标题翻译： WAFER控制体和半导体制造设备
公开(公告)号：JP2009218420A
公开(公告)日：2009-09-24
申请号：JP2008061450
申请日：2008-03-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITAKURA KATSUHIRO , NAKADA HIROHIKO , NIIMA KENJI
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a wafer holding body capable of remarkably improving a cooling speed of a wafer placing base and improving also a temperature increasing speed, and to provide a semiconductor manufacturing apparatus loaded with the wafer holding body. SOLUTION: The wafer holding body includes: the wafer placing base provided with a wafer placing surface for placing a wafer and a heating body; a wafer placing base supporting body for supporting the wafer placing base from the opposite side to the wafer placing surface; and a cooling medium jet module for jetting a cooling medium to the opposite side surface of the wafer placing base, which is opposed to the wafer placing surface. The semiconductor manufacturing apparatus is loaded with the wafer holding body. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够显着提高晶片载置台的冷却速度并提高升温速度的晶片保持体，并提供装载有晶片保持体的半导体制造装置。解决方案：晶片保持体包括：晶片放置基座，设置有用于放置晶片和加热体的晶片放置表面; 用于将晶片放置基座从相对侧支撑到晶片放置表面的晶片放置基座支撑体; 以及用于将冷却介质喷射到与晶片放置表面相对的晶片放置基座的相对侧表面的冷却介质喷射模块。半导体制造装置装载有晶片保持体。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2007035747A Wafer holder, and wafer prober equipped with the same 审中-公开
标题翻译： WAFER HOLDER和WAFER PROBER同时配备
公开(公告)号：JP2007035747A
公开(公告)日：2007-02-08
申请号：JP2005213832
申请日：2005-07-25
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NIIMA KENJI , ITAKURA KATSUHIRO , AWAZU TOMOYUKI , NAKADA HIROHIKO
IPC分类号： H01L21/683 , G01R31/28 , H01L21/66
CPC分类号： G01R31/2865 , G01R31/2875 , H01L21/67109 , H01L21/68757 , Y10T279/17
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder having small distortion even if a high load is applied and capable of efficiently preventing contact failure, and capable of preventing an increase in temperature of a driving system of the wafer holder when a semiconductor having a minute circuit, especially requiring high accuracy is heated, and to provide a wafer prober device equipped with the same. SOLUTION: The wafer holder 1 consists of a chuck top 2 for placing a wafer, and a supporter 4 for supporting the chuck top 2. The flatness of the supporter 4 is set at not more than 0.1 mm. More preferably, the flatness is not more than 0.05 mm, and still more preferably, it is not more than 0.01 mm. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使施加高负载，也能够提供具有小变形的晶片保持器，并且能够有效地防止接触不良，并且能够防止当半导体的晶片保持器的驱动系统的温度升高时具有特别需要高精度的微小电路被加热，并且提供配备有它的晶片探测器装置。解决方案：晶片保持器1由用于放置晶片的卡盘顶部2和用于支撑卡盘顶部2的支撑件4组成。支撑件4的平坦度设定为不大于0.1mm。平坦度更优选为0.05mm以下，更优选为0.01mm以下。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005286106A Heater unit and device loading the same 有权
标题翻译：加热单元和装置加载
公开(公告)号：JP2005286106A
公开(公告)日：2005-10-13
申请号：JP2004097861
申请日：2004-03-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NIIMA KENJI , NAKADA HIROHIKO , NATSUHARA MASUHIRO
IPC分类号： H05B3/20 , H01L21/02 , H01L21/027 , H01L21/68 , H01L21/683 , H05B3/10 , H05B3/74
摘要： PROBLEM TO BE SOLVED: To provide a heater unit, in which temperature distribution of a heater can be made uniform from start of cooling to termination of cooling and cooling speed is further improved. SOLUTION: The heater unit is provided with a heater substrate in which a heating element circuit and an insulating film protecting the heating element circuit are formed at a rear face, and which loads an object to be heated on a main face opposite to the rear face and heats it and a cooling block that can abut on/be detached from the rear face of the heater substrate. The sum total of the flatness of an abutment face of the heater substrate and the cooling block is not more than 0.8 mm. It is the same as the heater substrate, where the heating element circuit is formed in the inside. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种加热器单元，其中加热器的温度分布可以从冷却开始到冷却终止结束而均匀，冷却速度进一步提高。解决方案：加热器单元设置有加热器基板，其中在后表面上形成有加热元件电路和保护加热元件电路的绝缘膜，并且在与主体相对的主面上装载待加热物体后表面加热，并且能够与加热器基板的背面抵接/分离的冷却块。加热器基板和冷却块的抵接面的平坦度的总和不大于0.8mm。与加热器基板相同，其中加热元件电路形成在内部。版权所有（C）2006，JPO＆NCIPI

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