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1. 发明专利

JP2015030634A 窒化アルミニウム焼結体およびそれを使用した半導体製造用または検査用ウェハ載置台审中-公开
标题翻译：氮化铝烧结紧凑型和用于生产或检查半导体的波形安装表，使用它们
公开(公告)号：JP2015030634A
公开(公告)日：2015-02-16
申请号：JP2013159983
申请日：2013-07-31
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： YAGI RYOHEI , NAKANISHI SHUSUKE , ITAKURA KATSUHIRO , NAKADA HIROHIKO
IPC分类号： C04B35/581 , H01L21/683 , H05B3/10 , H05B3/20
摘要：【課題】高温での体積抵抗率が低いために加熱中に絶縁破壊を起こしてヒータが破損したり、寿命が極端に短くなったりすることのない窒化アルミニウム焼結体を提供する。【解決手段】複数の電気回路が埋設された半導体製造用または半導体検査用のウェハ載置台の当該複数の電気回路の間に好適に使用される窒化アルミニウム焼結体であって、カーボンの含有量が0.005〜0.05質量%、焼結密度が3.20g/cm3以上、500℃における体積抵抗率が1?107&OHgr;・cm以上、JIS Z8730に準じた色相b値が7.0以下である。【選択図】なし
摘要翻译：要解决的问题：提供一种氮化铝烧结体，其在加热期间不会导致绝缘击穿，因为其在高温下具有低体积电阻率，从而防止加热器破裂或极大地缩短寿命。解决方案：氮化铝烧结体适用于用于制造或检查半导体的晶片安装台的多个电路，并且其中埋设有多个电路。氮化铝烧结体的碳含量为0.005〜0.05质量％，烧结密度为3.20g / cm 3以上，500℃下的体积电阻率为1×10＆OHgr。 cm以上，并且根据JIS Z8730的色调b值为7.0以下。

2. 发明专利

JP2013214606A Wafer holder having holding base made of pottery 审中-公开
标题翻译：具有罐头基座的水龙头
公开(公告)号：JP2013214606A
公开(公告)日：2013-10-17
申请号：JP2012083852
申请日：2012-04-02
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SAKITA SHIGENOBU , ITAKURA KATSUHIRO , MIKUMO AKIRA , NAKADA HIROHIKO
IPC分类号： H01L21/683 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive wafer holder which has uniform heating properties, high rigidity and heat insulating properties, and also suppresses flatness changes of a wafer mounting surface against temperature changes.SOLUTION: The wafer holder 10 comprises: a first metal plate 11 having a wafer mounting surface 11a on the top face thereof; a support plate 12 which supports the first metal plate 11 from the undersurface thereof and is made of ceramic or the like ; a holding base 13 which holds the support plate 12, also is joined to the support plate 12 by a plurality of first joint members 16, has a thermal conductivity of 3 W/mK or less, and is made of pottery; a second metal plate 15 which is arranged in a space part provided between the support plate 12 and the holding base 13 and is joined to the first metal plate 11 by a plurality of second joint members 17; and a heat generating unit 14 which is arranged between the first metal plate 11 and the support plate 12 or the support plate 12 and the second metal plate 15.
摘要翻译：要解决的问题：提供一种廉价的晶片保持器，其具有均匀的加热性能，高刚性和隔热性能，并且还抑制晶片安装表面的温度变化的平坦度变化。解决方案：晶片保持器10包括：第一金属板 11，其顶面上具有晶片安装面11a; 支撑板12，其从其下表面支撑第一金属板11，并由陶瓷等制成; 保持支撑板12的保持基座13也通过多个第一接合构件16接合到支撑板12，具有3W / mK以下的导热率，并且由陶瓷制成; 第二金属板15，其布置在设置在支撑板12和保持基座13之间的空间部分中，并且通过多个第二接头构件17接合到第一金属板11; 以及设置在第一金属板11和支撑板12或支撑板12和第二金属板15之间的发热体单元14。

3. 发明专利

JP2012191241A Wafer holding body for wafer prober and the wafer prober equipped with the same 审中-公开
标题翻译：用于WAFER探头的WAFER保持体和与此相同的WAFER探头
公开(公告)号：JP2012191241A
公开(公告)日：2012-10-04
申请号：JP2012144544
申请日：2012-06-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITAKURA KATSUHIRO , SAKITA SHIGENOBU , NAKADA HIROHIKO
IPC分类号： H01L21/683 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a wafer holding body which realizes temperature distribution with high accuracy, maintains the flatness of a chuck top while preventing deformation and damage of the chuck top during rapid heating up and cooling down or pressing in probing, and enables highly accurate measurements even after being used repeatedly, and to provide a wafer prober apparatus equipped with the wafer holding body.SOLUTION: A wafer holding body for a wafer prober 1 includes a chuck top 2 having a chuck top conductor layer 3 on its surface and including a heating body 4; multiple supporting bars 5 supporting the chuck top 2; and a bottom part substrate 6 on which the supporting bars 5 are installed. The supporting bars 5 partially support a rear surface of the chuck top 2. Further, it is preferable that a total chuck top supporting area of the supporting bars 5 is less than 15 percent of the entire area of the rear surface of the chuck top 2. The chuck top 2 can include a cooling module.
摘要翻译：解决问题的方案为了提供一种以高精度实现温度分布的晶片保持体，保持卡盘顶部的平坦度，同时防止卡盘顶部在快速加热和冷却或按压试验期间的变形和损坏，并且即使在重复使用之后也能够进行高精度的测量，并且提供配备有晶片保持体的晶片探测器装置。解决方案：用于晶片探测器1的晶片保持体包括其表面上具有卡盘顶部导体层3并包括加热体4的卡盘顶部2; 支撑卡盘顶部2的多个支撑杆5; 以及安装有支撑杆5的底部基板6。支撑杆5部分地支撑卡盘顶部2的后表面。此外，优选地，支撑杆5的总卡盘顶部支撑面积小于卡盘顶部2的后表面的整个面积的15％卡盘顶部2可以包括冷却模块。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011081932A Heater and device mounting the same 审中-公开
标题翻译：加热器和装置安装相同
公开(公告)号：JP2011081932A
公开(公告)日：2011-04-21
申请号：JP2009231201
申请日：2009-10-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITAKURA KATSUHIRO , KITABAYASHI KEIJI , MIKUMO AKIRA , NAKADA HIROHIKO
IPC分类号： H05B3/74 , H01L21/683 , H05B3/10
摘要： PROBLEM TO BE SOLVED: To provide a heater with high rigidity at relatively low cost, which improves the characteristics of temperature increase and decrease and realizes a high throughput through.
SOLUTION: The heater includes a first heat equalizing plate having a wafer placing surface, a second heat equalizing plate supporting the first heat equalizing plate, and a resistive heating element between the first heat equalizing plate and the second heat equalizing plate, and is structured by integrating the resistive heating element with an opposite face from the wafer placing surface of the first heat equalizing plate by an insulation adhesive layer. By having such a structure, the heater capable of raising or lowering temperature at high speed without generation of deformation or cracks can be provided.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了以相对低的成本提供具有高刚性的加热器，其提高了温度升高和降低的特性，并且实现了高通量。解决方案：加热器包括具有晶片放置表面的第一热平衡板，支撑第一热平衡板的第二热平衡板和位于第一热平衡板和第二热平衡板之间的电阻加热元件，以及通过绝缘粘合剂层将电阻加热元件与第一热平衡板的晶片放置表面的相对面集成。通过具有这种结构，可以提供能够在不产生变形或裂纹的情况下高速地升高或降低温度的加热器。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011009706A Heater unit and device equipped with the same 有权
标题翻译：加热器及其装置
公开(公告)号：JP2011009706A
公开(公告)日：2011-01-13
申请号：JP2010093408
申请日：2010-04-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITAKURA KATSUHIRO , KITABAYASHI KEIJI , MIKUMO AKIRA , NAKADA HIROHIKO
IPC分类号： H01L21/683 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To increase a temperature increase/decrease rate without deteriorating the thermal uniformity within a placing surface or while maintaining higher thermal uniformity than before.SOLUTION: A heater unit 10 has a first heat-equalizing plate 11 having a placing surface on which a substrate is placed, a second heat-equalizing plate 12 supporting the first heat-equalizing plate 11, and at least one layer of an insulated resistance heater 13 provided between the first heat-equalizing plate 11 and the second heat-equalizing plate 12, wherein the first heat-equalizing plate 11 and the second heat-equalizing plate 12 are connected with each other relatively movably in an approximately parallel direction to their facing surfaces, and wherein one out of the first heat-equalizing plate 11 and second heat-equalizing plate 12 comprises a metal and processed to have flexibility on at least one side, and the other is comprised of ceramic or metal-ceramic composite material.
摘要翻译：要解决的问题：提高温度上升/下降速率，而不会降低放置表面内的热均匀性，或者同时保持比以前更高的热均匀性。解决方案：加热器单元10具有第一热平衡板11，其具有放置表面放置基板，支撑第一热平衡板11的第二热平衡板12和设置在第一热平衡板11和第二热平衡板12之间的至少一层绝缘电阻加热器13 其特征在于，所述第一热量平衡板11和所述第二热量平衡板12在与其相对的面相对大致平行的方向上相对移动地彼此连接，并且其中，所述第一热量均衡板11和所述第二热平衡板12中的一个，平衡板12包括金属并在至少一个侧面上具有柔性，另一个由陶瓷或金属 - 陶瓷复合材料构成。

6. 发明专利

JP2009218420A Wafer holding body, and semiconductor manufacturing apparatus 有权
标题翻译： WAFER控制体和半导体制造设备
公开(公告)号：JP2009218420A
公开(公告)日：2009-09-24
申请号：JP2008061450
申请日：2008-03-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITAKURA KATSUHIRO , NAKADA HIROHIKO , NIIMA KENJI
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a wafer holding body capable of remarkably improving a cooling speed of a wafer placing base and improving also a temperature increasing speed, and to provide a semiconductor manufacturing apparatus loaded with the wafer holding body. SOLUTION: The wafer holding body includes: the wafer placing base provided with a wafer placing surface for placing a wafer and a heating body; a wafer placing base supporting body for supporting the wafer placing base from the opposite side to the wafer placing surface; and a cooling medium jet module for jetting a cooling medium to the opposite side surface of the wafer placing base, which is opposed to the wafer placing surface. The semiconductor manufacturing apparatus is loaded with the wafer holding body. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够显着提高晶片载置台的冷却速度并提高升温速度的晶片保持体，并提供装载有晶片保持体的半导体制造装置。解决方案：晶片保持体包括：晶片放置基座，设置有用于放置晶片和加热体的晶片放置表面; 用于将晶片放置基座从相对侧支撑到晶片放置表面的晶片放置基座支撑体; 以及用于将冷却介质喷射到与晶片放置表面相对的晶片放置基座的相对侧表面的冷却介质喷射模块。半导体制造装置装载有晶片保持体。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007208186A Wafer holder, semiconductor manufacturing device mounted with the same and wafer prober 审中-公开
标题翻译： WAFER HOLDER，与其相同的半导体制造设备和WAFER PROBER
公开(公告)号：JP2007208186A
公开(公告)日：2007-08-16
申请号：JP2006028441
申请日：2006-02-06
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI , NAKADA HIROHIKO , ITAKURA KATSUHIRO
IPC分类号： H01L21/683 , H01L21/027 , H01L21/66
CPC分类号： G01R31/2877
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder equipped with a cooling module for quickly cooling a wafer, and configured to improve the soaking property of the wafer, and to be suitably used for a wafer prober or a cotar developer or the like. SOLUTION: This wafer holder is provided with a placing stand on whose placing surface a wafer is placed; a heating element 1 for heating the placing stand; and a cooling module for cooling the placing stand, wherein the outer diameter of the cooling module is set so as to be smaller than the outer diameter of the placing stand, and the heating element 1 is arranged outside the cooling module of the placing stand. A complementary heating element along with the outside heating element 1 may be arranged between the cooling module and the placing stand, or on the surface of the cooling module at the opposite side of the placing stand. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种具有用于快速冷却晶片的冷却模块的晶片保持器，并且被配置为提高晶片的均热性能，并且适合用于晶片探测器或者共同显影剂或者喜欢。
解决方案：该晶片保持器设置有放置台，放置台放置晶片; 用于加热放置台的加热元件1; 以及用于冷却所述放置台的冷却模块，其中所述冷却模块的外径被设定为小于所述放置台的外径，并且所述加热元件1设置在所述放置台的冷却模块的外侧。互补加热元件与外部加热元件1一起可以布置在冷却模块和放置台之间，或者布置在冷却模块的放置台的相对侧的表面上。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007042910A Chuck top for wafer prober and wafer prober mounted with the same 审中-公开
标题翻译：用于与其相同的WAFER PROBER和WAFER PROBER的顶部
公开(公告)号：JP2007042910A
公开(公告)日：2007-02-15
申请号：JP2005226204
申请日：2005-08-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： AWAZU TOMOYUKI , ITAKURA KATSUHIRO , NATSUHARA MASUHIRO , NAKADA HIROHIKO
IPC分类号： H01L21/66 , G01R31/28 , H01L21/683
CPC分类号： G01R31/2865
摘要： PROBLEM TO BE SOLVED: To provide a chuck top for a wafer prober which can improve throughput by improving a temperature increase speed of a prober and the soaking performance thereof, and a wafer prober device mounted with the same. SOLUTION: The chuck top for a wafer prober has a conductor layer on its surface, and has a heat generator on a portion other than the conductor layer. The maximum outer dimension l of a region where the heat generator is provided is smaller than the diameter L of the chuck top, and satisfies a relation of l+4t>Wl, where the thickness of the chuck top is t and the diameter of the wafer is W1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于晶片探测器的卡盘顶部，其可以通过提高探测器的升温速度及其浸泡性能来提高生产量，以及安装该探针的晶片探测器装置。解决方案：用于晶片探测器的卡盘顶部在其表面上具有导体层，并且在导体层之外的部分上具有发热体。设置发热体的区域的最大外形尺寸l小于卡盘顶部的直径L，满足1 + 4t> W1的关系，其中卡盘顶部的厚度为t，晶片为W1。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007035747A Wafer holder, and wafer prober equipped with the same 审中-公开
标题翻译： WAFER HOLDER和WAFER PROBER同时配备
公开(公告)号：JP2007035747A
公开(公告)日：2007-02-08
申请号：JP2005213832
申请日：2005-07-25
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NIIMA KENJI , ITAKURA KATSUHIRO , AWAZU TOMOYUKI , NAKADA HIROHIKO
IPC分类号： H01L21/683 , G01R31/28 , H01L21/66
CPC分类号： G01R31/2865 , G01R31/2875 , H01L21/67109 , H01L21/68757 , Y10T279/17
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder having small distortion even if a high load is applied and capable of efficiently preventing contact failure, and capable of preventing an increase in temperature of a driving system of the wafer holder when a semiconductor having a minute circuit, especially requiring high accuracy is heated, and to provide a wafer prober device equipped with the same. SOLUTION: The wafer holder 1 consists of a chuck top 2 for placing a wafer, and a supporter 4 for supporting the chuck top 2. The flatness of the supporter 4 is set at not more than 0.1 mm. More preferably, the flatness is not more than 0.05 mm, and still more preferably, it is not more than 0.01 mm. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使施加高负载，也能够提供具有小变形的晶片保持器，并且能够有效地防止接触不良，并且能够防止当半导体的晶片保持器的驱动系统的温度升高时具有特别需要高精度的微小电路被加热，并且提供配备有它的晶片探测器装置。解决方案：晶片保持器1由用于放置晶片的卡盘顶部2和用于支撑卡盘顶部2的支撑件4组成。支撑件4的平坦度设定为不大于0.1mm。平坦度更优选为0.05mm以下，更优选为0.01mm以下。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2015039507A 加熱調理器审中-公开
标题翻译：加热烹饪机
公开(公告)号：JP2015039507A
公开(公告)日：2015-03-02
申请号：JP2013171783
申请日：2013-08-21
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： KITABAYASHI KEIJI , SHIMMA KENJI , ITAKURA KATSUHIRO , MIKUMO AKIRA , NAKADA HIROHIKO
IPC分类号： A47J37/06 , H05B3/10 , H05B3/74
摘要：【課題】温度変更時に掛かる時間を短縮させることができる上、均熱性に優れた加熱調理器を提供する。【解決手段】食材Fを載せて加熱調理する調理面11aを有する調理プレート11と、調理プレート11を加熱するヒーター13とを備えた加熱調理器10であって、ヒーター13は層状の発熱体13aと、該発熱体13aを電気的に絶縁するポリイミドを主成分とする絶縁材13bとで構成される。このヒーター13は、調理面11aに平行な面内において少なくとも2つの領域に別々に設けられているのが好ましく、該調理プレート11には、領域毎に温度センサー16が設けられているのがより好ましい。【選択図】図1
摘要翻译：要解决的问题：提供一种能够减少温度变化时的时间和热均匀性优异的加热烹调器。解决方案：加热烹调器10配有烹调板11，烹饪面11具有食物F 放置用于热烹饪，加热器13用于加热烹饪板11.加热器13由层叠加热元件13a和绝缘材料13b组成，其主要成分是使加热元件13a电绝缘的聚酰亚胺。加热器13优选地设置在与烹饪表面11a平行的平面中的至少两个区域中，并且更优选地在烹饪板11的每个区域中设置温度传感器16。

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