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    • 2. 发明专利
    • Gas decomposition element, power generator and gas decomposition method
    • 气体分解元件,发电机和气体分解方法
    • JP2012091139A
    • 2012-05-17
    • JP2010242207
    • 2010-10-28
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • HIRAIWA CHIHIROMASHIMA MASATOSHIKUWABARA TETSUYAAWAZU TOMOYUKIMIZUHARA NAHOUEDA TOSHIODOI HIDEYUKIKURAMOTO TOSHIYUKI
    • B01D53/58B01J19/08H01M8/02H01M8/12
    • H01M8/10B01D53/326B01D2257/406B01D2258/0216H01M4/8657H01M8/1007
    • PROBLEM TO BE SOLVED: To provide a gas decomposition element which can efficiently decompose a specified gas.SOLUTION: This gas decomposition element is configured to include a cylindrical membrane electrode assembly (MEA) 7 including a cylindrical solid electrolytic layer 1, a first electrode layer 2 formed in laminar fashion at the inner circumferential part of the solid electrolytic layer 1 and a second electrode layer 5 formed in laminar fashion at the outer circumferential part of the solid electrolytic layer 1. In addition, a gas guiding pipe 11k is arranged by inserting it into the inner space of the cylindrical MEA 7 from one end part side of the cylindrical MEA 7 so that a cylindrical flow path 43 is formed between the inner circumferential surface of the cylindrical MEA 7 and the gas guiding pipe 11k, while the other end part 44 of the cylindrical MEA 7 is sealed. Further, the gas flowing toward the sealed part inside the gas guiding pipe 11k is allowed to flow out of the interior of the gas guiding pipe 11k near the sealed part. Thus the gas finds its way flowing reversely, and consequently, the internal gas behavior of the cylindrical flow path 43 is such that the flow of the gas occurs in the opposite direction to the flow of the gas inside the gas guiding pipe 11k.
    • 要解决的问题:提供能够有效地分解特定气体的气体分解元件。 解决方案:该气体分解元件被构造为包括圆柱形固体电解质层1的圆柱形膜电极组件(MEA)7,在固体电解质层1的内周部分以层状形成的第一电极层2 以及在固体电解质层1的外周部以层叠方式形成的第二电极层5.另外,气体导入管11k通过从气体导入管11k的一个端部侧插入筒状MEA7的内部空间而配置 圆柱形MEA 7,从而在圆柱形MEA7的内圆周表面和气体导向管11k之间形成圆柱形流动路径43,同时密封圆柱形MEA7的另一端部44。 此外,允许气体导管11k内的密封部分流动的气体从密封部分附近的导气管11k的内部流出。 因此,气体发现其反向流动,因此,圆柱形流动路径43的内部气体行为使得气体的流动沿与气体引导管11k内的气体的流动相反的方向发生。 版权所有(C)2012,JPO&INPIT
    • 3. 发明专利
    • Apparatus for manufacturing semiconductor
    • 制造半导体的装置
    • JP2011001582A
    • 2011-01-06
    • JP2009144337
    • 2009-06-17
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • NISHIZUKA KOJIUEDA TOSHIOKURAMOTO TOSHIYUKITAKASUKA EIRYO
    • C23C16/455H01L21/205
    • PROBLEM TO BE SOLVED: To supply an apparatus for manufacturing a semiconductor which is prevented from unnecessarily accumulating deposit on the inner part of the apparatus by supplying a prescribed gas for film formation uniformly to a desired material to be processed.SOLUTION: A processing apparatus 1 includes a susceptor 3 holding a substrate 15 of a processing object, a supply member 9 supplying a first gas on one main surface of the substrate 15, a buffer chamber 100 for supplying a second gas from an area opposed to one main surface of the substrate 15 and a boundary part 50 for supplying the second gas from the buffer chamber 100 to a reactor chamber 200 in which the susceptor 3 is arranged in the inside of a processing container, and the boundary part 50 is formed from a uniform porous material.
    • 要解决的问题:提供一种半导体制造装置,其通过向期望的待处理材料供给用于成膜的规定气体均匀地防止其不必要地积累沉积在装置的内部。解决方案:处理装置1 包括保持处理对象的基板15的基座3,在基板15的一个主表面上供给第一气体的供给部件9,从与基板的一个主面相对的区域供给第二气体的缓冲室100 15和用于将第二气体从缓冲室100供应到反应室200的边界部分50,其中基座3布置在处理容器的内部,并且边界部分50由均匀的多孔材料形成。
    • 5. 发明专利
    • Semiconductor manufacturing device
    • 半导体制造设备
    • JP2009130257A
    • 2009-06-11
    • JP2007305937
    • 2007-11-27
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • KURAMOTO TOSHIYUKIUEDA TOSHIOUENO MASANORI
    • H01L21/205C23C16/455
    • PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of performing uniform treatment.
      SOLUTION: A treatment device includes a susceptor 3, a support member, a support part 4, and flow passages 26, 27 as gas inflow suppressing parts. The susceptor 3 holds a substrate 15 as a treatment subject treated by reaction gas, and can rotate. The support member supports an outer circumference part of the susceptor 3. The support part 4 is arranged in a part where the outer circumference part of the susceptor 3 and the support member face with each other. The flow passages 26, 27 as the gas inflow suppressing parts suppress inflow of the reaction gas in a region where the support part 4 is positioned. Concretely, heights T1, T2 and lengths L1, L2 of the flow passages 26, 27 are set so that distribution resistance of the reaction gas becomes sufficiently high.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供能够进行均匀处理的半导体制造装置。 解决方案:处理装置包括基座3,支撑构件,支撑部分4和作为气体流入抑制部分的流动通道26,27。 基座3保持作为通过反应气体处理的处理对象的基板15,并且可以旋转。 支撑构件支撑基座3的外周部。支撑部4布置在基座3的外周部和支撑构件彼此面对的部分中。 作为气体流入抑制部的流路26,27抑制反应气体在支撑部4的位置的流入。 具体地说,流路26,27的高度T1,T2和长度L1,L2被设定为使得反应气体的分布电阻变得足够高。 版权所有(C)2009,JPO&INPIT
    • 9. 发明专利
    • Gas detoxifying apparatus
    • 气体脱氧器
    • JP2010247034A
    • 2010-11-04
    • JP2009097498
    • 2009-04-13
    • Sumitomo Electric Ind Ltd住友電気工業株式会社
    • MORI DAIKIUEDA TOSHIOTAKASUKA EIRYOMASHIMA MASATOSHIKURAMOTO TOSHIYUKI
    • B01D53/58B01D53/56B01D53/72B01D53/74B01J19/08
    • PROBLEM TO BE SOLVED: To provide a gas detoxifying apparatus which is (1) miniaturized and capable of detoxifying a harmful gas to a harmless level efficiently and (2) operable at a low running cost.
      SOLUTION: The gas detoxifying apparatus includes: a flow path A1 to which a gas containing a chemical component is introduced, and that the anode 2 of an MEA faces; and a conductive porous body 11 which comes in contact with the anode so as to serve as an anode collector and has continuous pores arranged so as to occupy the flow path A1. The conductive porous body includes an electrode contact porous sheet 11s in contact with the electrode of the MEA and a non-contact porous sheet 11t not in contact with the electrode of the MEA, and the electrode contact porous sheet is finer than the non-contact porous sheet.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 解决的问题:提供一种气体解毒装置,其特征在于,(1)小型化,能够有效地将有害气体无害化处理,并且能够以低运行成本进行操作。 气体解毒装置包括:引入含有化学成分的气体的流路A1,MEA的阳极2面对的流路A1; 以及与阳极接触以作为阳极集电体并具有排列成占据流路A1的连续孔的导电性多孔体11。 导电性多孔体包括与MEA的电极接触的电极接触多孔质片11s和不与MEA的电极接触的非接触式多孔片11t,电极接触多孔质片比非接触式 多孔片。 版权所有(C)2011,JPO&INPIT