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1. 发明专利

JP2007258466A Illuminating device, and light-emitting device 审中-公开
标题翻译：照明装置和发光装置
公开(公告)号：JP2007258466A
公开(公告)日：2007-10-04
申请号：JP2006081295
申请日：2006-03-23
申请人： Sumita Optical Glass Inc , Toyoda Gosei Co Ltd , 株式会社住田光学ガラス , 豊田合成株式会社
发明人： YAMAZAKI MASAAKI , ISHII OSAMU , SAWANOBORI SHIGETO , NAGAHAMA SHINOBU , SUEHIRO YOSHINOBU , IWAYAMA AKIRA , NAKAMURA AKIRA
IPC分类号： F21V8/00 , F21Y101/02 , G02B6/00 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide an illuminating device and a light-emitting device wherein the variation of the intrinsic color-tone of an illuminated object, etc. which are based on the color separation of its flooding light, etc. are suppressed, and a high light utilizing efficiency is realized. SOLUTION: In the illuminating device and the light-emitting device, a light source 5 is constituted out of the one having a blue semiconductor light emitting element for emitting an exciting light, and a light guiding member 4 is constituted out of a fluorescent fiber 4 having a core 40 and a clad 41. Furthermore, the core 40 guides an exciting light (a) in Fig.2 emitted from a blue semiconductor laser element 50 from its one end surface to its other end surface, and contains the fluorescence for emitting a wave-length converting light by so receiving the exciting light (a) in Fig.2 from the blue semiconductor laser element 50 as to be excited. Moreover, the clad 41 has on its outer peripheral surface a light flooding surface for flooding as a flooding light (output light) (b) in Fig.2 at least a portion of the mixed light of the wave-length converting light with the exciting light (a) in Fig.2. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种照明装置和发光装置，其中基于其泛光灯的颜色分离等的照明物体等的本征色调的变化是抑制，实现高光利用效率。解决方案：在照明装置和发光装置中，由具有用于发射激发光的蓝色半导体发光元件的光源5构成，并且导光部件4由具有芯40和包层41的荧光纤维4.此外，芯40将从蓝色半导体激光元件50发射的图2中的激发光（a）从其一个端面引导到另一端面，并且包含通过接收来自蓝色半导体激光元件50的激励的图2中的激发光（a）发射波长转换光的荧光。此外，包层41在其外周面上具有用于在图2中用作淹没光（输出光）（b）淹没的光驱表面，波长转换光的混合光的至少一部分具有令人兴奋的光（a）在图2中。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007335666A Method for dividing nitride semiconductor wafer 审中-公开
标题翻译：用于分离氮化物半导体波长的方法
公开(公告)号：JP2007335666A
公开(公告)日：2007-12-27
申请号：JP2006166304
申请日：2006-06-15
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： SONOYAMA TAKAHIRO , HATANO TAKASHI , IWAYAMA AKIRA
IPC分类号： H01S5/02 , B28D5/00 , H01L21/301 , H01S5/042 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a division method of a nitride semiconductor wafer capable of reducing cost by dispensing with the formation of a current diffusion conductive film with respect to a nitride semiconductor layer. SOLUTION: In the division method of a nitride semiconductor wafer, having a process for cleaving the nitride semiconductor wafer for obtaining a nitride semiconductor element 1, where a p electrode 10 is laminated on a nitride semiconductor layer 3, the p electrode 10 is pressed down to the nitride semiconductor layer 3 by an electrode hold-down film 51, before the process of cleaving the nitride semiconductor wafer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过分配相对于氮化物半导体层形成电流扩散导电膜来降低成本的氮化物半导体晶片的分割方法。解决方案：在具有用于切割氮化物半导体晶片以获得氮化物半导体元件1的方法的氮化物半导体晶片的分割方法中，其中将p电极10层压在氮化物半导体层3上，p电极10为在切割氮化物半导体晶片的过程之前，通过电极压紧膜51向下压到氮化物半导体层3。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2004146496A Light-emitting device 有权
公开(公告)号：JP2004146496A
公开(公告)日：2004-05-20
申请号：JP2002308166
申请日：2002-10-23
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI , IWAYAMA AKIRA
IPC分类号： H01S5/022 , H01S5/042 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device extended in life and enhanced in reliability by preventing the deposition of organic substances on the laser diode chip end face.
SOLUTION: In this light-emitting device which comprises a laser diode chip, a laser diode chip housing, and a photocatalyst disposed in the housing, the light emitted by the laser diode chip is utilized for the activation of the photocatalyst so that organic substances in the light-emitting device are decomposed for the prevention of their deposition on the chip end face.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2006237475A Process for fabricating semiconductor laser 审中-公开
标题翻译：制造半导体激光的工艺
公开(公告)号：JP2006237475A
公开(公告)日：2006-09-07
申请号：JP2005053028
申请日：2005-02-28
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： IWAYAMA AKIRA
IPC分类号： H01S5/042
摘要： PROBLEM TO BE SOLVED: To suppress increase in threshold voltage of a semiconductor laser having a ridge type resonator.
SOLUTION: Entire surface layer 106b of a first metal layer composed of nickel (Ni) is deposited by about 10 nm. An inventive anti-oxidation film S is formed on a second metal layer 106c of gold (Au) having a thickness of about 200 nm and located above a p-type contact layer 105b by lift-off method employing photolithography. The anti-oxidation film S is formed of SiO
2 having a thickness of about 70 nm along the flat stripe top surface Σ of a resonator. Stripe width is about 1,500 nm on the flat top surface Σ of the p-type contact layer 105b. Subsequently, density distribution of nickel (Ni) and gold (Au) is inverted by heat treatment to obtain an inverted distribution. Heat treatment is performed in an ordinary pressure treatment atmosphere of nitrogen 98% and oxygen 2% at a treatment temperature of 550°C with a treatment time of 18 min for example.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：抑制具有脊型谐振器的半导体激光器的阈值电压的增加。解决方案：由镍（Ni）构成的第一金属层的整个表面层106b沉积约10nm。本发明的抗氧化膜S通过使用光刻的剥离方法形成在厚度为约200nm的金（Au）的第二金属层106c上，并且通过剥离方法位于p型接触层105b之上。抗氧化膜S沿着谐振器的平坦条纹顶面Σ具有约70nm的厚度的SiO 2 形成。条形宽度在p型接触层105b的平坦顶面Σ上约为1500nm。随后，通过热处理使镍（Ni）和金（Au）的密度分布反转，得到反向分布。在处理温度为550℃，处理时间为18分钟的条件下，在氮气98％的常压处理气氛和氧气2％下进行热处理。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006190713A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2006190713A
公开(公告)日：2006-07-20
申请号：JP2004381948
申请日：2004-12-28
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： IWAYAMA AKIRA , HATANO TAKASHI
IPC分类号： H01S5/323 , H01S5/022 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To keep up effectively a balance between a heat dissipation from a resonator and a positive adhesion to the resonator of a p electrode in a ridge type semiconductor laser.
SOLUTION: The flat top surface Σ of a p-type contact layer 105b is a surface exposed when the unnecessary part (the upper part on the common crowning of the resonator) of the insulating wall 110 which once laminated uniformly to a junction side is removed by an etching treatment. A first metal layer 106a is formed by vapor-depositing and forming a nickel (Ni) on this flat top surface Σ and the insulating wall 110, and its film thickness is formed about 250 nm. Then, a shielding film S made of a stripe shape Al
2 O
3 extended in the resonance direction in the flat top surface of the first metal layer 106a is formed by about 180 nm of thickness by a lift-off method. Then, the second metal layer 106b of about 250 nm of the thickness made of a nickel (Ni) is laminated by depositing on the first metal layer 106a and the shielding film S which are exposed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在脊型半导体激光器中保持谐振器的散热和对p电极的谐振器的正粘附之间的平衡。解决方案：p型接触层105b的平坦顶面Σ是当绝缘壁110的不必要部分（谐振器的共同隆起处的上部）一次层合到接合部时露出的表面侧通过蚀刻处理除去。通过在该平坦顶面Σ和绝缘壁110上气相沉积并形成镍（Ni）形成第一金属层106a，并且其膜厚约形成约250nm。然后，在第一金属层106a的平坦顶面中在谐振方向上延伸的由条状Al 2 SB 3 O 3 / SB 3构成的屏蔽膜S形成为约180° nm的厚度。然后，通过沉积在暴露的第一金属层106a和屏蔽膜S上层叠由镍（Ni）制成的厚度为约250nm的第二金属层106b。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006237435A Process for fabricating group iii nitride based compound semiconductor laser 审中-公开
标题翻译：制备III类氮化物化合物半导体激光的方法
公开(公告)号：JP2006237435A
公开(公告)日：2006-09-07
申请号：JP2005052524
申请日：2005-02-28
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： IWAYAMA AKIRA , OHASHI MASAHIRO
IPC分类号： H01S5/323 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a process for fabricating a group III nitride based compound semiconductor laser in which the ohmic characteristics of an electrode are improved by suppressing damage on the interface between a p-electrode and a p-type contact layer, and residue of mask material.
SOLUTION: The process for fabricating a group III nitride based compound semiconductor laser comprises a step for forming a plurality of semiconductor layers composed of a group III nitride based compound semiconductor on a substrate, a step for forming an electrode narrower than the semiconductor layer on the surface thereof, and a step for forming a ridge by etching the semiconductor layer using the electrode as a mask. Since the surface of the electrode is composed of a metal insusceptible to etching, influence of damage due to plasma and influence of corrosion due to etching gas onto a p-electrode is reduced.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过抑制p电极和p型接触层之间的界面的损伤来提高电极的欧姆特性的III族氮化物基化合物半导体激光器的制造方法，和掩模材料的残留物。解决方案：用于制造III族氮化物基化合物半导体激光器的方法包括在衬底上形成由III族氮化物基化合物半导体构成的多个半导体层的步骤，用于形成比半导体窄的电极的步骤并且通过使用电极作为掩模蚀刻半导体层来形成脊的步骤。由于电极的表面由不易蚀刻的金属构成，所以由于等离子体引起的损伤的影响以及蚀刻气体对p电极的腐蚀的影响降低。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006237476A Semiconductor laser and its fabrication process 审中-公开
标题翻译：半导体激光器及其制造工艺
公开(公告)号：JP2006237476A
公开(公告)日：2006-09-07
申请号：JP2005053029
申请日：2005-02-28
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： IWAYAMA AKIRA
IPC分类号： H01S5/042
摘要： PROBLEM TO BE SOLVED: To suppress increase in threshold voltage of a semiconductor laser having a ridge type resonator.
SOLUTION: Entire surface layer 106b constituting a part of a first metal layer M1 composed of nickel (Ni) is deposited on the junction side of an element by about 10 nm. The entire surface layer 106b formed of the same kind of metal (Ni) and a frame layer 106a are integrated to form a series of single Ni layer M1. This integrated single Ni layer M1 corresponds to the inventive first metal layer. On the interface of the first metal layer M1 and a p-type contact layer 105b, nickel composing the first metal layer M1 bonds strongly to unnecessary matters such as dirt adhering to the contact layer 105b or its surface. Subsequently, a second metal layer 106c of gold (Au) is further deposited by about 300 nm. That element is then heat treated in treatment atmosphere containing oxygen. Inclination angle θ of the sidewall face of the resonator is set at about 82°.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：抑制具有脊型谐振器的半导体激光器的阈值电压的增加。解决方案：构成由镍（Ni）构成的第一金属层M1的一部分的整个表面层106b沉积在元件的结合面上约10nm。由相同种类的金属（Ni）和框架层106a形成的整个表面层106b被一体化以形成一系列单个Ni层M1。该集成的单个Ni层M1对应于本发明的第一金属层。在第一金属层M1和p型接触层105b的界面上，构成第一金属层M1的镍与附着在接触层105b或其表面上的污垢等不必要的物质结合。随后，金（Au）的第二金属层106c进一步沉积约300nm。然后将该元素在含氧的处理气氛中进行热处理。谐振器的侧壁面的倾角θ设定在约82°。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2003332688A Iii nitride based compound semiconductor laser 审中-公开
标题翻译：三硝基化合物半导体激光
公开(公告)号：JP2003332688A
公开(公告)日：2003-11-21
申请号：JP2003040462
申请日：2003-02-19
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： HATANO TAKASHI , IWAYAMA AKIRA , KOIKE MASAYOSHI
IPC分类号： H01S5/20 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/209 , H01S5/22 , H01S5/34333 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To form a carrier injection part without damaging a guide layer in a III nitride based compound semiconductor laser.
SOLUTION: In the semiconductor laser 100 comprising a sapphire substrate 1, an AlN buffer layer 2, an Si doped n-GaN layer 3, an Si doped n-Al
0.1 Ga
0.9 N clad layer 4, an Si doped n-GaN guide layer 5, an active layer 6 having an MQW structure of a GaN barrier layer 62 having a thickness of about 35 Åand a well layer 61 of Ga
0.95 In
0.05 N having a thickness of about 35 Å, an Mg doped p-GaN guide layer 7, an Mg doped p-Al
0.25 Ga
0.75 N layer 8, an Mg doped p-Al
0.1 Ga
0.9 N clad layer 9, an Mg doped p-GaN contact layer 10, an Ni electrode 11, and an Al electrode 12, a hole injection ridge B abutting on a resonance ridge A is formed to have a width substantially same as the width (w) of the Ni electrode 11. Since the p-layer 8 has a high aluminum composition and the etching rate thereof is low, the p guide layer 7 can be protected against damage at the time of etching.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：在III族氮化物基化合物半导体激光器中形成载体注入部分而不损害引导层。解决方案：在包括蓝宝石衬底1，AlN缓冲层2，Si掺杂的n-GaN层3，掺杂Si的n-Al 0.1 SBS 0.9的半导体激光器100中 N掺杂层4，Si掺杂n-GaN引导层5，具有厚度约为的GaN阻挡层62的MQW结构的有源层6和Ga <0.95的阱层61 具有约35厚度的 0.05 N，Mg掺杂的p-GaN导向层7，Mg掺杂的p-Al 0.25 0.75N层8，Mg掺杂的p-Al Ga 0.9 N覆盖层9，Mg掺杂的p-GaN接触层10，Ni电极如图11所示，并且Al电极12，形成与谐振脊A抵接的空穴注入脊B，其宽度与Ni电极11的宽度（w）大致相同。由于p层8具有高的铝组成并且其蚀刻速率低，可以保护p引导层7免受蚀刻时的损伤。版权所有（C）2004，JPO

9. 发明专利

JP2006190714A Semiconductor laser and its manufacturing method 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2006190714A
公开(公告)日：2006-07-20
申请号：JP2004381949
申请日：2004-12-28
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： IWAYAMA AKIRA
IPC分类号： H01S5/042 , H01S5/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To assure simultaneously the good ohmic contact and the positive adhesion state of a p electrode between the p electrode and a semiconductor in the flat top surface of the resonator of a ridge type semiconductor laser.
SOLUTION: The upper layer part 106b of a first metal layer made of a nickel (Ni) is laminated by about 10 nm thickness by depositing to a junction side. Thereby, the upper layer part 106b and the lower layer part 106a of the first metal layer formed with a metal (Ni) of the same kind are unified, and the metal layer (first metal layer of this invention) of one layer only with especially thick part on an insulating film 110 is formed. After that, further, the second metal layer 106c made of gold (Au) is laminated by about 100 nm thickness by depositing. At the last, the positional relation (lamination ranking) between the upper layer part 106b and the second metal layer 106c of the first metal layer is reversed by a rapid heat treatment. This heat treatment is executed for 18 min. in 550°C treatment atmosphere (volume ratio: 98% of nitrogen, 2% of oxygen) at an ordinary pressure.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了同时确保p型电极与脊型半导体激光器的谐振器的平坦顶面中的半导体之间的p电极的良好的欧姆接触和正粘附状态。解决方案：由镍（Ni）制成的第一金属层的上层部分106b通过沉积到接合侧而层压约10nm厚度。由此，形成有相同种类的金属（Ni）的第一金属层的上层部分106b和下层部分106a是一体的，一层的金属层（本发明的第一金属层）形成绝缘膜110上的厚部。此后，通过沉积将由金（Au）制成的第二金属层106c层压约100nm厚度。最后，通过快速热处理使第一金属层的上层部106b和第二金属层106c之间的位置关系（层叠等级）反转。该热处理18分钟。在550℃的处理气氛（体积比：98％的氮气，2％的氧气）中。版权所有（C）2006，JPO＆NCIPI

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