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1. 发明专利

JP2003073197A Method for producing semiconductor crystal 有权
标题翻译：生产半导体晶体的方法
公开(公告)号：JP2003073197A
公开(公告)日：2003-03-12
申请号：JP2001265927
申请日：2001-09-03
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KOIKE MASAYOSHI , WATANABE HIROSHI
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： PROBLEM TO BE SOLVED: To obtain a good quality semiconductor crystal independent of a ground substrate.
SOLUTION: In a separation layer dissipation process α, the temperature of a reaction chamber (heat treatment temperature T
x ) is elevated to about 1,000°C and a protection layer B having a film thickness of about 10 μm is separated from a ground substrate side (a sapphire substrate 101 having a buffer layer 102) by pyrolytically decomposing (vaporizing) a separation layer A. Such a separation is caused by a result that since the temperature of the layer A decomposition is that of film formation (about 650°C) of the layer B or higher but not higher than the film formation temperature (about 1,000°C) of a semiconductor crystal layer C, the layer A is dissipated (vaporized) by a pyrolysis. By such a process, the semiconductor crystal having a cross-sectional structure shown in Fig. 2 (b) is obtained. Accordingly, by using the layer B independent of the ground substrate side as a new crystal growth substrate, the high quality semiconductor crystal layer C (GaN single crystal) can be obtained without dislocation or crack coming up with a stress caused by the differences of lattice constant and thermal expansion coefficient between the layer C and the ground substrate side.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：获得独立于接地衬底的优质半导体晶体。解决方案：在分离层耗散过程α中，将反应室的温度（热处理温度Tx）升高至约1000℃，将具有约10μm厚度的保护层B从接地衬底侧分离（具有缓冲层102的蓝宝石衬底101）通过热分解（蒸发）分离层A而产生。这样的分离是由于层A分解的温度是成膜的温度（约650℃））但不高于半导体晶体层C的成膜温度（约1000℃）时，层A通过热解而消散（汽化）。通过这样的处理，具有图1所示的横截面结构的半导体晶体。 2（b）。因此，通过使用独立于接地衬底侧的层B作为新的晶体生长衬底，可以获得高品质的半导体晶体层C（GaN单晶）而不会由于晶格差异引起的应力而产生位错或裂纹层C和接地衬底侧之间的恒定和热膨胀系数。

2. 发明专利

JP2003012399A Production process for group iii nitride compound semiconductor 审中-公开
标题翻译： III类氮化物半导体的生产工艺
公开(公告)号：JP2003012399A
公开(公告)日：2003-01-15
申请号：JP2001192615
申请日：2001-06-26
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KOIKE MASAYOSHI , WATANABE HIROSHI
IPC分类号： C30B29/38 , C30B25/18 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a production process for crack-free group III nitride compound semiconductors.
SOLUTION: Thermal stress can greatly be reduced by using a substrate whose thickness is a half or less than a half of that of an epitaxial growth layer at least at part of the zone where the substrate is in contact with the epitaxial growth layer on a different substrate, or by thinning the desired zone in advance in the thinning process. This process can markedly reduce the occurrence of cracks at least in group III nitride compound semiconductors.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供无裂纹III族氮化物化合物半导体的生产方法。解决方案：至少在衬底与不同外延生长层接触的区域的一部分，使用厚度为外延生长层的一半或少于半数的衬底，可以大大降低热应力底物，或通过在稀化过程中预先稀释所需区域。该工艺可以至少在III族氮化物化合物半导体中明显减少裂纹的发生。

3. 发明专利

JP2004146496A Light-emitting device 有权
公开(公告)号：JP2004146496A
公开(公告)日：2004-05-20
申请号：JP2002308166
申请日：2002-10-23
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI , IWAYAMA AKIRA
IPC分类号： H01S5/022 , H01S5/042 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device extended in life and enhanced in reliability by preventing the deposition of organic substances on the laser diode chip end face.
SOLUTION: In this light-emitting device which comprises a laser diode chip, a laser diode chip housing, and a photocatalyst disposed in the housing, the light emitted by the laser diode chip is utilized for the activation of the photocatalyst so that organic substances in the light-emitting device are decomposed for the prevention of their deposition on the chip end face.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2003017743A Iii group nitride-based compound semiconductor light emitting element 有权
标题翻译： III基于氮化物的化合物半导体发光元件
公开(公告)号：JP2003017743A
公开(公告)日：2003-01-17
申请号：JP2001167589
申请日：2001-06-04
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： ASAMI SHINYA , WATANABE HIROSHI , ITO JUN , SHIBATA NAOKI
IPC分类号： H01L33/06 , H01L21/205 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/06 , Y10S257/918
摘要： PROBLEM TO BE SOLVED: To provide a III group nitride based compound semiconductor light emitting element that has a structure suitable for radiating a short-wavelength light. SOLUTION: A multiple layer including a quantum well structure having an InGaN well layer and an AlGaN barrier layer is used to control the film thickness, growth speed, and growth temperature of the InGaN layer as a well layer, and to control the film thickness of the AlGaN layer as a barrier layer as well to optimize them and improve the output of a light emitting element.
摘要翻译：要解决的问题：提供一种具有适于辐射短波长光的结构的III族氮化物基化合物半导体发光元件。解决方案：使用包括具有InGaN阱层和AlGaN势垒层的量子阱结构的多层来控制作为阱层的InGaN层的膜厚度，生长速度和生长温度，并且控制膜厚度 AlGaN层作为阻挡层，并且优化它们并改善发光元件的输出。

5. 发明专利

JP2005197596A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2005197596A
公开(公告)日：2005-07-21
申请号：JP2004004433
申请日：2004-01-09
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI
IPC分类号： H01S5/323 , H01S5/024 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To solve the problem wherein it has been difficult to provide a higher power laser since a rise in temperature on the side of a light emitting end face melts the end face thereof and so electric power to be supplied is not increased, and thereby to increase the power outputted by a semiconductor light emitting device.
SOLUTION: The light emitting end face 110 of a sapphire substrate 101 is formed with a multitude of grooves 120, which results in the formation of a multitude of projections (fins) 130. The groove 120 has a width W of 10 μm, a depth D of 30 μm, and periodicity T of 20 μm, while the projection 130 has a width of 10 μm. The repetition of the groove 120 and projection 130 enlarges an effective area for radiation, thereby increasing radiation effect on the side of the light emitting end face of the sapphire substrate 101. As a result, a radiation characteristic of a laser cavity composed principally of an activated layer 104 is improved, and thereby the temperature rise in the light emitting end face is prevented, thus making it possible to prevent the light emitting end face from being melted. Therefore, it has become possible to increase the power to be supplied and thereby to increase the laser output power.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了解决难以提供较高功率的激光器的问题，因为发光端面的温度升高熔化其端面，因此供电的电力为不增加，从而增加半导体发光器件输出的功率。解决方案：蓝宝石衬底101的发光端面110形成有多个沟槽120，这导致形成多个突起（鳍片）130。槽120的宽度W为10μm ，深度D为30μm，周期T为20μm，而突起130的宽度为10μm。凹槽120和突起130的重复放大了用于辐射的有效区域，从而增加了蓝宝石衬底101的发光端面侧的辐射效应。结果，激光腔的辐射特性主要由活性层104得到改善，从而防止了发光端面的温度上升，从而可以防止发光端面熔化。因此，可以增加供电功率，从而提高激光输出功率。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004349485A Laser diode element 审中-公开
公开(公告)号：JP2004349485A
公开(公告)日：2004-12-09
申请号：JP2003145137
申请日：2003-05-22
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI
IPC分类号： H01S5/22 , H01S5/02 , H01S5/022 , H01S5/10 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/343
CPC分类号： H01S5/32341 , H01S5/02212 , H01S5/0224 , H01S5/02288 , H01S5/0654 , H01S5/1082 , H01S5/2218 , H01S5/2231
摘要： PROBLEM TO BE SOLVED: To provide a structure of a ridge waveguide type III group nitride compound semiconductor laser diode element capable of stabilizing a transverse horizontal mode without increasing threshold current density and operating voltage.
SOLUTION: In the ridge waveguide type III group nitride compound semiconductor laser diode element, a ridge part including a first region including a central part and continuing in a lengthwise direction, and a second region sandwiching both the sides of the first region with an average thickness of its layer thinner than that of the second region, is formed.
COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2003007626A Method of manufacturing iii nitride compound semiconductor 有权
标题翻译：制备III型氮化物半导体的方法
公开(公告)号：JP2003007626A
公开(公告)日：2003-01-10
申请号：JP2001192614
申请日：2001-06-26
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KOIKE MASAYOSHI , WATANABE HIROSHI
IPC分类号： C30B25/12 , C30B29/38 , H01L21/205 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a III nitride compound semiconductor which will not generate cracks. SOLUTION: A first support jig 2 is equipped with a recess of depth 50 μm or smaller, and a part of the first support jig 2, other than the recess is nearly flush with the surface of a thin dissimilar board 10 when the thin dissimilar board 10 of 50 μm or smaller thickness is placed on the recess. A thick dissimilar board 1 is placed on the first support jig 2 with the recess, so as to be embedded partially in the recess, the thick dissimilar board 1 is ground through chemical polishing, by which the thin dissimilar board 10 of thickness 50 μm or smaller can be obtained. At this point, this fixing process cannot be carried out through a mechanical method, but the thin dissimilar board 10 is mechanically fixed with a second supporting jig 4, after an adhesive layer 3 has been cleaned, so that this manufacturing method is capable of coping with the epitaxial growth of a III nitride compound semiconductor which is carried out at a temperature of 1,000 deg.C or so.
摘要翻译：要解决的问题：提供不会产生裂纹的III族氮化物化合物半导体的制造方法。解决方案：第一支撑夹具2配备有深度为50μm以下的凹部，第一支撑夹具2的除凹部以外的部分与薄的异种板10的表面几乎齐平，将50微米或更小厚度的10放置在凹槽上。将厚度不同的板1放置在具有凹部的第一支撑夹具2上，以部分地嵌入凹部中，通过化学抛光研磨厚度不同的板1，通过该不同板1，厚度为50μm的薄的异种板10或可以获得较小的。在这一点上，这种定影过程不能通过机械方法进行，但是在粘合剂层3被清洁之后，薄的不同板10被机械地固定有第二支撑夹具4，使得该制造方法能够应对在1000℃左右的温度下进行III族氮化物化合物半导体的外延生长。

8. 发明专利

JP2004146499A Method for manufacturing group iii nitride compound semiconductor element 审中-公开
标题翻译：制备III类氮化物半导体元件的方法
公开(公告)号：JP2004146499A
公开(公告)日：2004-05-20
申请号：JP2002308182
申请日：2002-10-23
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI , NAKAMURA AKIRA
IPC分类号： C23C16/34 , C23C16/455 , H01L21/205 , H01L33/06 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To form an Al-containing group III nitride compound semiconductor layer at a high growth rate. SOLUTION: The growth rate of an Al-containing group III nitride compound semiconductor is increased when the carrier gas flow rate is accelerated even if the amount of material gas supply is kept constant. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：以高生长速度形成含Al的III族氮化物化合物半导体层。解决方案：即使材料气体供应量保持恒定，当载气流量加速时，含Al III族氮化物化合物半导体的生长速率也增加。版权所有（C）2004，JPO

9. 发明专利

JP2005158881A Semiconductor laser element 审中-公开
标题翻译：半导体激光元件
公开(公告)号：JP2005158881A
公开(公告)日：2005-06-16
申请号：JP2003392658
申请日：2003-11-21
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI
IPC分类号： H01L21/316 , H01S5/028 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element in which lowering of relative noise field intensity characteristics can be suppressed without sacrifice of good crystal growth performance of GaN.
SOLUTION: External radiation of spontaneous radiation light component is prevented by providing a protective layer 20 exhibiting light reflectivity from the upper surface to the side face of an LD element 1. The protective layer 20 is constituted by laying an SiO
2 layer 20A and a TiO
2 layer 20B alternately and reflects spontaneous radiation light component emitted from an MQW layer 16 thus suppressing radiation to the outside of the LD element.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供可以在不牺牲GaN的良好的晶体生长性能的情况下抑制相对噪声场强特性的降低的半导体激光元件。解决方案：通过提供从LD元件1的上表面到侧面呈现光反射性的保护层20来防止自发辐射光成分的外部辐射。保护层20通过将SiO 2＆lt; SB＆gt;层20A和TiO 2 SB 2层20B交替地反射从MQW层16发射的自发辐射光成分，从而将辐射抑制到LD元件的外部。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004335913A Laser diode element 审中-公开
标题翻译：激光二极管元件
公开(公告)号：JP2004335913A
公开(公告)日：2004-11-25
申请号：JP2003132639
申请日：2003-05-12
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WATANABE HIROSHI
IPC分类号： H01S5/343 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a nitride-based Group III compound semiconductor laser diode element having a structure which can effectively prevent a trouble caused by spontaneously emitted light while avoiding the deterioration of an element characteristic and complicated manufacturing steps.
SOLUTION: In the laser diode element having a structure wherein a plurality of nitride-based Group III compound semiconductor layers are laminated on a substrate, a light shielding layer having a light reflecting property and/or a light absorbing property is formed on the rear surface of the substrate.
COPYRIGHT: (C)2005,JPO&NCIPI

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