专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07138686B1 Integrated circuit with improved signal noise isolation and method for improving signal noise isolation 有权
标题翻译：具有改进的信号噪声隔离的集成电路和用于改善信号噪声隔离的方法
公开(公告)号：US07138686B1
公开(公告)日：2006-11-21
申请号：US11142433
申请日：2005-05-31
申请人： Suman K. Banerjee , Enrique Ferrer , Olin L. Hartin , Radu M. Secareanu
发明人： Suman K. Banerjee , Enrique Ferrer , Olin L. Hartin , Radu M. Secareanu
IPC分类号： H01L29/76
CPC分类号： H01L27/0248 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A system-on chip (SOC) (100) and method of isolating noise in a SOC, including a plurality of noise sensitive circuit blocks (120, 220) and ESD protected pads (302, 304, 306, 308, 310, 312, and 314). A VDD isolation pad (302) is connected to an N well ring (124) of the first noise sensitive circuit (120) to collect noise from the substrate (110) and isolate the circuit from the P well region (112). A ground protected pad (304) is connected to an isolated P well (126) of a first noise sensitive circuit (120). The ground pad (304) collects noise from the isolated P well (126) and sends it to ground. A dedicated ground isolation pad (306) is connected to a P well ring (224) of a second noise sensitive circuit (220). The dedicated ground isolation pad (306) collects noise from the P well ring (224) and sends it to ground. The dedicated ground isolation pad (306) and the ground pad (304) collect noise that would normally propagate between the first and second noise sensitive circuits (120, 220) and additional circuits that share the same substrate (110).
摘要翻译：一种片上系统（SOC）（100）以及分离SOC中的噪声的方法，包括多个噪声敏感电路块（120,220）和ESD保护焊盘（302,304,306,308,310,312,312）和314）。 VDD隔离焊盘（302）连接到第一噪声敏感电路（120）的N阱环（124），以从基板（110）收集噪声，并将电路与P阱区域（112）隔离。接地保护焊盘（304）连接到第一噪声敏感电路（120）的隔离P阱（126）。接地焊盘（304）从隔离的P阱（126）收集噪声并将其发送到地面。专用接地隔离垫（306）连接到第二噪声敏感电路（220）的P阱环（224）。专用接地隔离垫（306）从P阱环（224）收集噪声并将其发送到地面。专用接地隔离焊盘（306）和接地焊盘（304）收集正常地在第一和第二噪声敏感电路（120,220）之间传播的噪声以及共享相同衬底（110）的附加电路。

2. 发明授权

US09048110B2 Noise isolation between circuit blocks in an integrated circuit chip 有权
标题翻译：集成电路芯片中电路块之间的噪声隔离
公开(公告)号：US09048110B2
公开(公告)日：2015-06-02
申请号：US13802006
申请日：2013-03-13
申请人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
发明人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
IPC分类号： H01L29/00 , H01L23/552 , H01L29/06 , H01L21/761 , H01L21/762 , H01L21/765 , H01L21/8234
CPC分类号： H01L29/0649 , H01L21/761 , H01L21/762 , H01L21/765 , H01L21/823481 , H01L29/0619
摘要： An integrated circuit includes a p-well block region having a low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region and a grounded, highly doped region for providing additional noise isolation.
摘要翻译：集成电路包括在衬底的区域中形成的低掺杂浓度的p阱块区域，用于在第一电路块和第二电路块之间提供噪声隔离。集成电路还包括保护区域和接地的高掺杂区域，用于提供额外的噪声隔离。

3. 发明授权

US07608913B2 Noise isolation between circuit blocks in an integrated circuit chip 有权
标题翻译：集成电路芯片中电路块之间的噪声隔离
公开(公告)号：US07608913B2
公开(公告)日：2009-10-27
申请号：US11360285
申请日：2006-02-23
申请人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
发明人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
IPC分类号： H01L23/58 , H01L23/62 , H01L29/00
CPC分类号： H01L29/0649 , H01L21/761 , H01L21/762 , H01L21/765 , H01L21/823481 , H01L29/0619
摘要： An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region formed surrounding the p-well block region for providing noise isolation between the first circuit block and the second circuit block.
摘要翻译：集成电路包括由于在衬底的区域中形成的低掺杂浓度而具有高电阻率的p阱块区域，用于在第一电路块和第二电路块之间提供噪声隔离。集成电路还包括围绕p阱块区域形成的保护区域，用于在第一电路块和第二电路块之间提供噪声隔离。

4. 发明授权

US07683483B2 Electronic device with connection bumps 有权
标题翻译：带连接凸块的电子设备
公开(公告)号：US07683483B2
公开(公告)日：2010-03-23
申请号：US11671048
申请日：2007-02-05
申请人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin , Sandra J. Wipf
发明人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin , Sandra J. Wipf
IPC分类号： H01L23/48 , H01L29/00
CPC分类号： H01L24/14 , H01L24/13 , H01L24/16 , H01L2224/13099 , H01L2224/14133 , H01L2224/16 , H01L2224/17519 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/14 , H01L2924/19043 , H01L2924/3011 , H01L2224/29099 , H01L2224/0401
摘要： Flip-chip electronic devices (40, 70, 80, 90) employ bumps (42, 72, 82) for coupling to an external substrate. Device cells (43, 73, 83, 93) and bumps (42, 72, 82) are preferably arranged in clusters (46) where four bumps (42, 72, 82) substantially surround each device cell (43, 73, 83, 93) or form a cross with the device cell (43, 73, 83, 93) at the intersection of the cross. The bumps (42, 72, 82) are desirably spaced apart by the minimum allowable bump (42, 72, 82) pitch (Lm). Typically, each device cell (43, 73, 83, 93) contains one or more active device regions (44, 74, 86, 96) depending on the overall function. Complex devices (40, 70) are formed by an X-Y array of the clusters (46), where adjacent clusters (46) may share bumps (43, 73, 83, 93) and/or device cells (43, 73, 83, 93). In a preferred embodiment, the bumps (42, 82) form the outer perimeter (48) of the device (40, 80, 90). The maximum device temperature and overall noise is reduced.
摘要翻译：倒装芯片电子器件（40,70,80,90）使用用于耦合到外部衬底的凸块（42,72,82）。装置单元（43,73,83,93）和凸块（42,72,82）优选地布置成簇（46），其中四个凸块（42,72,82）基本上围绕每个器件单元（43,73,83） 93）或与十字交叉点处的设备单元（43,73,83,93）形成十字。凸起（42,72,82）期望地间隔开最小允许凸起（42,72,82）间距（Lm）。通常，取决于整个功能，每个设备单元（43,43,83,93）包含一个或多个有源器件区域（44,47,86,96）。复数器件（40,70）由簇（46）的XY阵列形成，其中相邻的簇（46）可共享凸块（43,43,83,93）和/或器件单元（43,43,83， 93）。在优选实施例中，凸块（42,82）形成装置（40,80,90）的外周边（48）。最大器件温度和总噪声降低。

5. 发明申请

US20090302440A1 NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP 审中-公开
标题翻译：集成电路芯片中的电路块之间的噪声隔离
公开(公告)号：US20090302440A1
公开(公告)日：2009-12-10
申请号：US12512616
申请日：2009-07-30
申请人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
发明人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
IPC分类号： H01L23/62 , H01L23/552
CPC分类号： H01L29/0649 , H01L21/761 , H01L21/762 , H01L21/765 , H01L21/823481 , H01L29/0619
摘要： An integrated circuit includes a p-well block region having a low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region and a grounded, highly doped region for providing additional noise isolation.
摘要翻译：集成电路包括在衬底的区域中形成的低掺杂浓度的p阱块区域，用于在第一电路块和第二电路块之间提供噪声隔离。集成电路还包括保护区域和接地的高掺杂区域，用于提供额外的噪声隔离。

6. 发明申请

US20130207229A1 NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP 有权
公开(公告)号：US20130207229A1
公开(公告)日：2013-08-15
申请号：US13802006
申请日：2013-03-13
申请人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
发明人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin
IPC分类号： H01L29/06
CPC分类号： H01L29/0649 , H01L21/761 , H01L21/762 , H01L21/765 , H01L21/823481 , H01L29/0619
摘要： An integrated circuit includes a p-well block region having a low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region and a grounded, highly doped region for providing additional noise isolation.

7. 发明申请

US20080185686A1 ELECTRONIC DEVICE WITH CONNECTION BUMPS 有权
标题翻译：具有连接件的电子设备
公开(公告)号：US20080185686A1
公开(公告)日：2008-08-07
申请号：US11671048
申请日：2007-02-05
申请人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin , Sandra J. Wipf
发明人： Radu M. Secareanu , Suman K. Banerjee , Olin L. Hartin , Sandra J. Wipf
IPC分类号： H01L23/48 , H01L29/00
CPC分类号： H01L24/14 , H01L24/13 , H01L24/16 , H01L2224/13099 , H01L2224/14133 , H01L2224/16 , H01L2224/17519 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/14 , H01L2924/19043 , H01L2924/3011 , H01L2224/29099 , H01L2224/0401
摘要： Flip-chip electronic devices (40, 70, 80, 90) employ bumps (42, 72, 82) for coupling to an external substrate. Device cells (43, 73, 83, 93) and bumps (42, 72, 82) are preferably arranged in clusters (46) where four bumps (42, 72, 82) substantially surround each device cell (43, 73, 83, 93) or form a cross with the device cell (43, 73, 83, 93) at the intersection of the cross. The bumps (42, 72, 82) are desirably spaced apart by the minimum allowable bump (42, 72, 82) pitch (Lm). Typically, each device cell (43, 73, 83, 93) contains one or more active device regions (44, 74, 86, 96) depending on the overall function. Complex devices (40, 70) are formed by an X-Y array of the clusters (46), where adjacent clusters (46) may share bumps (43, 73, 83, 93) and/or device cells (43, 73, 83, 93). In a preferred embodiment, the bumps (42, 82) form the outer perimeter (48) of the device (40, 80, 90). The maximum device temperature and overall noise is reduced.
摘要翻译：倒装芯片电子器件（40,70,80,90）使用用于耦合到外部衬底的凸块（42,72,82）。装置单元（43,73,83,93）和凸块（42,72,82）优选地布置成簇（46），其中四个凸块（42,72,82）基本上围绕每个器件单元（43,73,83） 93）或与十字交叉点处的设备单元（43,73,83,93）形成十字。凸起（42,72,82）期望地间隔开最小允许凸起（42,72,82）间距（L SUB）。通常，取决于整个功能，每个设备单元（43,43,83,93）包含一个或多个有源器件区域（44,47,86,96）。复数器件（40,70）由簇（46）的XY阵列形成，其中相邻的簇（46）可共享凸块（43,43,83,93）和/或器件单元（43,43,83， 93）。在优选实施例中，凸块（42,82）形成装置（40,80,90）的外周边（48）。最大器件温度和总噪声降低。

8. 发明授权

US07741718B2 Electronic apparatus interconnect routing 有权
标题翻译：电子设备互连路由
公开(公告)号：US07741718B2
公开(公告)日：2010-06-22
申请号：US12624005
申请日：2009-11-23
申请人： Suman K. Banerjee , Alain C. Duvalley , Olin L. Hartin , Craig Jasper , Walter Parmon
发明人： Suman K. Banerjee , Alain C. Duvalley , Olin L. Hartin , Craig Jasper , Walter Parmon
IPC分类号： H01L29/40
CPC分类号： H01L23/528 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： Apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.
摘要翻译：提供了用于布置以差分配置操作的双门电子设备的互连的设备。提供了一种形成在基板上的电子设备，包括被配置为耦合到所述基板的第一区域的第一互连（40,42,44），耦合到所述第一互连并配置的第一栅极（22,24,26,28）接收第一差分输入，平行于第一互连并被配置为耦合到衬底的第二区域的第二互连（30,32,34,36,38）以及耦合到第二互连的第二栅极（20）并且被配置为接收第二差分输入。第一栅极平行于第一互连，第二栅极平行于第二互连。

9. 发明授权

US07683486B2 Electronic apparatus interconnect routing and interconnect routing method for minimizing parasitic resistance 有权
标题翻译：用于最小化寄生电阻的电子设备互连路由和互连路由方法
公开(公告)号：US07683486B2
公开(公告)日：2010-03-23
申请号：US11302007
申请日：2005-12-09
申请人： Suman K. Banerjee , Alain C. Duvallet , Craig Jasper , Olin L. Hartin , Walter Parmon
发明人： Suman K. Banerjee , Alain C. Duvallet , Craig Jasper , Olin L. Hartin , Walter Parmon
IPC分类号： H01L29/40
CPC分类号： H01L23/528 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： Method and apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.
摘要翻译：提供了用于路由以差分配置工作的双门电子设备的互连的方法和装置。提供了一种形成在基板上的电子设备，包括被配置为耦合到所述基板的第一区域的第一互连（40,42,44），耦合到所述第一互连并配置的第一栅极（22,24,26,28）接收第一差分输入，平行于第一互连并被配置为耦合到衬底的第二区域的第二互连（30,32,34,36,38）以及耦合到第二互连的第二栅极（20）并且被配置为接收第二差分输入。第一栅极平行于第一互连，第二栅极平行于第二互连。

10. 发明申请

US20100065968A1 ELECTRONIC APPARATUS INTERCONNECT ROUTING 有权
标题翻译：电子装置互连路由器
公开(公告)号：US20100065968A1
公开(公告)日：2010-03-18
申请号：US12624005
申请日：2009-11-23
申请人： Suman K. Banerjee , Alain C. Duvallet , Olin L. Hartin , Craig Jasper , Walter Parmon
发明人： Suman K. Banerjee , Alain C. Duvallet , Olin L. Hartin , Craig Jasper , Walter Parmon
IPC分类号： H01L23/532
CPC分类号： H01L23/528 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： Apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.
摘要翻译：提供了用于布置以差分配置操作的双门电子设备的互连的设备。提供了一种形成在基板上的电子设备，包括被配置为耦合到所述基板的第一区域的第一互连（40,42,44），耦合到所述第一互连并配置的第一栅极（22,24,26,28）接收第一差分输入，平行于第一互连并被配置为耦合到衬底的第二区域的第二互连（30,32,34,36,38）以及耦合到第二互连的第二栅极（20）并且被配置为接收第二差分输入。第一栅极平行于第一互连，第二栅极平行于第二互连。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式