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1. 发明授权

US5478401A Apparatus and method for surface treatment 失效
标题翻译：表面处理装置及方法
公开(公告)号：US5478401A
公开(公告)日：1995-12-26
申请号：US399512
申请日：1995-03-07
申请人： Sukeyoshi Tsunekawa , Keisuke Funatsu , Kenichi Kawasumi , Akio Inada , Masaro Kaku
发明人： Sukeyoshi Tsunekawa , Keisuke Funatsu , Kenichi Kawasumi , Akio Inada , Masaro Kaku
IPC分类号： B08B11/02 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/687
CPC分类号： H01L21/68735 , H01L21/67109 , H01L21/67115 , H01L21/68742 , H01L21/6875
摘要： An apparatus and method for surface treatment of a substance to be processed, which are capable of decreasing the number of foreign matters holding on the reverse side of the substance more than prior art like apparatus and method without largely decreasing a surface treating speed as compared with that of the prior art, by supplying ozone gas to the surface of the substance mounted on a supporting base. The supporting base has a heating part and a supporting part. There is provided a supporting material on the surface of the supporting part for partly supporting one side of the substance to be processed so that a required amount of gap may be formed between the substance to be processed and the supporting part. In the heating part is built a heater. And for a member constituting the supporting part is used a material having greater emissivity than a member constituting the heating part.
摘要翻译：一种用于表面处理待处理物质的装置和方法，其能够比现有技术类似的装置和方法更少地保留在物体的相反侧的异物数量，而不会大大降低表面处理速度，与通过向安装在支撑基座上的物质的表面供给臭氧气体，是现有技术。支撑基座具有加热部和支撑部。在支撑部件的表面上设置有支撑材料，用于部分地支撑待处理物质的一侧，使得可以在待处理物质和支撑部件之间形成所需量的间隙。在加热部分内装一个加热器。并且对于构成支撑部件的构件使用具有比构成加热部件的构件更大的发射率的材料。

2. 发明授权

US5503708A Method of and apparatus for removing an organic film 失效
标题翻译：除去有机膜的方法和装置
公开(公告)号：US5503708A
公开(公告)日：1996-04-02
申请号：US155858
申请日：1993-11-23
申请人： Kootaroo Koizumi , Sukeyoshi Tsunekawa , Kenichi Kawasumi , Takeshi Kimura , Keisuke Funatsu
发明人： Kootaroo Koizumi , Sukeyoshi Tsunekawa , Kenichi Kawasumi , Takeshi Kimura , Keisuke Funatsu
IPC分类号： H01L21/306 , G03F7/42 , H01L21/311 , H01L21/00
CPC分类号： G03F7/42 , H01L21/31138
摘要： An organic film removing method uses an organic film removing apparatus comprising a processing vessel defining a processing chamber, a wafer support for supporting a semiconductor wafer within the processing chamber, and a mixed gas supplier for supplying a mixed gas consisting of an alcohol or alcohols, and ozone gas or an ozone-containing gas into the processing chamber so that the mixed gas acts on an organic film pattern on the surface of the supported semiconductor wafer. The apparatus continuously supplies the mixed gas into the processing chamber at least in a period between a time immediately before mounting the semiconductor wafer on the wafer support and a time when the organic film is removed completely; conveys the semiconductor wafer into the processing chamber; supports the semiconductor wafer within the processing chamber; and heats the patterned organic film on the surface of the supported semiconductor wafer at a temperature in a range below a temperature at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer. This method is capable of ashing the organic film at an ashing rate equal to or higher than an ashing rate at which a known organic film removing method employing a steam-containing ozone gas ashes the organic film, and of reducing water marks as compared with the known method employing the steam-containing ozone gas.
摘要翻译：有机膜去除方法使用有机膜去除装置，其包括限定处理室的处理容器，用于在处理室内支撑半导体晶片的晶片支撑件和用于供应由醇或醇组成的混合气体的混合气体供应器，和臭氧气体或含臭氧气体进入处理室，使得混合气体作用在被支撑的半导体晶片的表面上的有机膜图案上。至少在将半导体晶片安装在晶片载体上之前的时间和完全去除有机薄膜的时间之间的时间内，该装置将混合气体连续地供给到处理室中; 将半导体晶片传送到处理室中; 支撑处理室内的半导体晶片; 并且在半导体晶片的要形成的半导体器件的元件中将在形成缺陷的温度以下的温度范围内的温度下对被加热的半导体晶片的表面上的图案化有机膜进行加热。该方法能够以等于或高于使用含有蒸汽的臭氧气体的有机薄膜去除方法灰化有机薄膜并且与其相比减少水痕的灰化速率灰化的有机薄膜灰化已知的使用含蒸汽的臭氧气体的方法。

3. 发明授权

US5246526A Surface treatment apparatus 失效
标题翻译：表面处理装置
公开(公告)号：US5246526A
公开(公告)日：1993-09-21
申请号：US908913
申请日：1992-07-02
申请人： Sumio Yamaguchi , Akio Inada , Kenichi Kawasumi
发明人： Sumio Yamaguchi , Akio Inada , Kenichi Kawasumi
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , H01L21/67028
摘要： In a surface treatment apparatus, an organic substance is removed through ashing by ultraviolet rays and ozone at atmospheric pressure. A transparent partition plate is provided in closely spaced, opposed relation to a material to be treated, and at least one gas outlet is open to that surface of the partition plate opposed to the material to be treated. With this arrangement, the gas can be directly collected via the gas outlet during the treatment, and the end point of the organic substance removal treatment can be detected by analyzing the collected gas.
摘要翻译：在表面处理装置中，通过紫外线和臭氧在大气压下灰化除去有机物质。透明分隔板与待处理材料紧密隔开，相对设置，并且至少一个气体出口与分隔板的与待处理材料相对的表面开口。通过这种布置，可以在处理期间通过气体出口直接收集气体，并且可以通过分析收集的气体来检测有机物质去除处理的终点。

4. 发明授权

US4314181A Arc discharge lamp starting device 失效
标题翻译：电弧放电灯起动装置
公开(公告)号：US4314181A
公开(公告)日：1982-02-02
申请号：US152541
申请日：1980-05-23
申请人： Kenichi Kawasumi , Kenji Narikiyo
发明人： Kenichi Kawasumi , Kenji Narikiyo
IPC分类号： H01J61/56 , H05B41/00 , H05B41/04 , H05B41/06 , H05B41/18
CPC分类号： H05B41/04 , Y10S315/02
摘要： Disclosed is an arc discharge lamp starting device which comprises a starting aid circuit connected in parallel to an arc tube and disposed within an outer envelope. This starting aid circuit comprises a thermal switch, a heater and a resistor. This thermal switch includes contact rods having a high melting point and a small work function and a bimetal plate.In this arc discharge lamp starting device, since the time of duration of the chattering phenomenon caused between the contact rods is very long, the arc discharge lamp can be started assuredly by this starting device.
摘要翻译：公开了一种电弧放电灯启动装置，其包括与电弧管并联连接并设置在外封套内的启动辅助电路。该启动辅助电路包括热开关，加热器和电阻器。该热开关包括具有高熔点和小功函数的接触棒和双金属板。在该电弧放电灯启动装置中，由于接触棒之间引起的抖动现象的持续时间非常长，所以可以通过该启动装置可靠地启动电弧放电灯。

5. 发明授权

US4587460A High-pressure discharge lamp operating circuit 失效
标题翻译：高压放电灯工作电路
公开(公告)号：US4587460A
公开(公告)日：1986-05-06
申请号：US603431
申请日：1984-04-24
申请人： Seiichi Murayama , Makoto Yasuda , Tsune Miyashita , Yoji Arai , Kenichi Kawasumi , Kazunori Kinoshita
发明人： Seiichi Murayama , Makoto Yasuda , Tsune Miyashita , Yoji Arai , Kenichi Kawasumi , Kazunori Kinoshita
IPC分类号： H05B41/16 , H05B41/04 , H05B41/231 , H05B41/24 , H05B41/288 , H05B41/292 , H05B41/38 , H05B41/14 , H05B41/26
CPC分类号： H05B41/042 , H05B41/2881 , H05B41/2928 , H05B41/382 , H05B41/388 , Y10S315/07
摘要： A high pressure discharge lamp in which discharge between a pair of main electrodes in an arc tube of the discharge lamp is sustained by a D.C. or high frequency current. The circuit comprises discharge mode controller for controlling the discharge such that mainly a low-frequency discharge is produced between the main electrodes at least within a predetermined time from initiation of the discharge within the arc tube, and subsequently transferred to the D.C. or high-frequency discharge.
摘要翻译：一种高压放电灯，其中放电灯的电弧管中的一对主电极之间的放电由直流或高频电流维持。该电路包括用于控制放电的放电模式控制器，使得主电极之间至少在电弧管内的放电开始之前的预定时间内主要产生低频放电，随后转移到DC或高频卸货。

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