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1. 发明授权

US5503708A Method of and apparatus for removing an organic film 失效
标题翻译：除去有机膜的方法和装置
公开(公告)号：US5503708A
公开(公告)日：1996-04-02
申请号：US155858
申请日：1993-11-23
申请人： Kootaroo Koizumi , Sukeyoshi Tsunekawa , Kenichi Kawasumi , Takeshi Kimura , Keisuke Funatsu
发明人： Kootaroo Koizumi , Sukeyoshi Tsunekawa , Kenichi Kawasumi , Takeshi Kimura , Keisuke Funatsu
IPC分类号： H01L21/306 , G03F7/42 , H01L21/311 , H01L21/00
CPC分类号： G03F7/42 , H01L21/31138
摘要： An organic film removing method uses an organic film removing apparatus comprising a processing vessel defining a processing chamber, a wafer support for supporting a semiconductor wafer within the processing chamber, and a mixed gas supplier for supplying a mixed gas consisting of an alcohol or alcohols, and ozone gas or an ozone-containing gas into the processing chamber so that the mixed gas acts on an organic film pattern on the surface of the supported semiconductor wafer. The apparatus continuously supplies the mixed gas into the processing chamber at least in a period between a time immediately before mounting the semiconductor wafer on the wafer support and a time when the organic film is removed completely; conveys the semiconductor wafer into the processing chamber; supports the semiconductor wafer within the processing chamber; and heats the patterned organic film on the surface of the supported semiconductor wafer at a temperature in a range below a temperature at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer. This method is capable of ashing the organic film at an ashing rate equal to or higher than an ashing rate at which a known organic film removing method employing a steam-containing ozone gas ashes the organic film, and of reducing water marks as compared with the known method employing the steam-containing ozone gas.
摘要翻译：有机膜去除方法使用有机膜去除装置，其包括限定处理室的处理容器，用于在处理室内支撑半导体晶片的晶片支撑件和用于供应由醇或醇组成的混合气体的混合气体供应器，和臭氧气体或含臭氧气体进入处理室，使得混合气体作用在被支撑的半导体晶片的表面上的有机膜图案上。至少在将半导体晶片安装在晶片载体上之前的时间和完全去除有机薄膜的时间之间的时间内，该装置将混合气体连续地供给到处理室中; 将半导体晶片传送到处理室中; 支撑处理室内的半导体晶片; 并且在半导体晶片的要形成的半导体器件的元件中将在形成缺陷的温度以下的温度范围内的温度下对被加热的半导体晶片的表面上的图案化有机膜进行加热。该方法能够以等于或高于使用含有蒸汽的臭氧气体的有机薄膜去除方法灰化有机薄膜并且与其相比减少水痕的灰化速率灰化的有机薄膜灰化已知的使用含蒸汽的臭氧气体的方法。

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