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1. 发明申请

US20110201104A1 ANTIVIRAL AGENT AGAINST ANIMAL VIRUSES 审中-公开
标题翻译：抗病毒药物抗动物病毒
公开(公告)号：US20110201104A1
公开(公告)日：2011-08-18
申请号：US12441965
申请日：2007-09-18
申请人： Suk-Chan Lee , Yong-Sung Kim , Myung-Hee Kwon , Tai-Hyun Kim , Jeong-Sun Kim , Gun-Sup Lee , Hye-Kyung Shim , Eul-Yong Park , Yu-Chul Jung , Ki-Yoon Kim , Yi-Jung Jung , Woo-Ram Lee , Young-Rim Kim , Jong-Nam Sohn , Seung-Hyun Lee
发明人： Suk-Chan Lee , Yong-Sung Kim , Myung-Hee Kwon , Tai-Hyun Kim , Jeong-Sun Kim , Gun-Sup Lee , Hye-Kyung Shim , Eul-Yong Park , Yu-Chul Jung , Ki-Yoon Kim , Yi-Jung Jung , Woo-Ram Lee , Young-Rim Kim , Jong-Nam Sohn , Seung-Hyun Lee
IPC分类号： C12N5/00 , C07H21/04 , C07K16/10
CPC分类号： C07K16/10 , A61K39/00 , A61K39/395 , A61K2039/505 , A61K2300/00 , C07K14/47 , C07K16/44 , C07K2317/622 , C07K2317/76 , C07K2317/92
摘要： Disclosed herein is an antiviral agent against animal viruses. The antiviral agent contains a protein or a nucleic acid sequence encoding the protein, as an active ingredient, the protein having binding ability and degrading ability to foreign nucleic acid chains invaded in an animal cell and that has no cytotoxicity to the animal cell itself. Disclosed herein is further an antiviral animal cell containing the protein according to the present invention, or the nucleic acid sequence encoding the protein. The antiviral agent and antiviral animal cell exhibit advantageous effects in that they selectively degrade foreign nucleic acid chains invaded in an animal cell and have no cytotoxicity to the animal cell, thus causing no death of the animal cell.
摘要翻译：本文公开了抗动物病毒的抗病毒剂。抗病毒剂含有蛋白质或编码作为活性成分的蛋白质的蛋白质或核酸序列，该蛋白质具有与动物细胞侵入的外源核酸链具有结合能力和降解能力，并且对动物细胞本身没有细胞毒性。本文公开了另外含有本发明蛋白质的抗病毒动物细胞或编码该蛋白质的核酸序列。抗病毒剂和抗病毒动物细胞表现出有利的作用，因为它们选择性降解在动物细胞中侵入的外来核酸链，并且对动物细胞没有细胞毒性，因此不会导致动物细胞的死亡。

2. 发明申请

US20110263829A1 CELL-PENETRATING, SEQUENCE-SPECIFIC AND NUCLEIC ACID-HYDROLYZING ANTIBODY, METHOD FOR PREPARING THE SAME AND PHARMACEUTICAL COMPOSITION COMPRISING THE SAME 审中-公开
标题翻译：细胞穿刺，序列特异性和核酸抗氢化抗体，其制备方法和包含其的药物组合物
公开(公告)号：US20110263829A1
公开(公告)日：2011-10-27
申请号：US13128844
申请日：2009-11-11
申请人： Yong-Sung Kim , Myung-Hee Kwon , Woo Ram Lee
发明人： Yong-Sung Kim , Myung-Hee Kwon , Woo Ram Lee
IPC分类号： C07K16/44 , C07K1/14
CPC分类号： C07K16/44 , C07K16/32 , C07K2317/34 , C07K2317/569 , C07K2317/73 , C07K2317/77 , C07K2317/82 , C07K2317/92 , C12N9/0002
摘要： Disclosed are a cell-penetrating, base sequence-specific, nucleic acid-hydrolyzing antibody, a method of preparing the same, and a pharmaceutical composition comprising the same. The antibody can be prepared by modifying a particular site of a cell-penetrating, nucleic acid-hydrolyzing antibody which lacks substrate specificity to impart sequence specificity thereto without alteration in nucleic acid-hydrolyzing ability. The antibody, when penetrating into cells by itself or ectopically expressed within cells, binds specifically to single- or double-stranded nucleic acid targets and hydrolyzes them, thus downregulating the expression of the targeted genes.
摘要翻译：公开了细胞穿透性，碱基序列特异性核酸水解抗体，其制备方法和包含其的药物组合物。抗体可以通过修饰缺乏底物特异性的细胞穿透性核酸水解抗体的特定位点来赋予其序列特异性而不改变核酸水解能力来制备。当抗体本身穿透细胞或在细胞内外表达时，该抗体特异性结合于单链或双链核酸靶，并将其水解，从而下调靶基因的表达。

3. 发明授权

US08492343B2 Protein scaffold library based on kringle domain structure and uses thereof 有权
标题翻译：基于kringle结构域的蛋白质支架库及其用途
公开(公告)号：US08492343B2
公开(公告)日：2013-07-23
申请号：US13058810
申请日：2009-08-07
申请人： Yong-Sung Kim , Myung-Hee Kwon , Chang-Han Lee
发明人： Yong-Sung Kim , Myung-Hee Kwon , Chang-Han Lee
IPC分类号： A61K38/00 , A61P35/00 , C12Q1/68 , C12N15/74 , C12N1/20
CPC分类号： C12N15/1044 , C40B40/10
摘要： There are provided a Kringle domain structure, comprising: inducing artificial mutations at amino acid residues except for conserved amino acid residues that are important to maintain the structural scaffold of a Kringle domain; and protein scaffold variants, based on the Kringle domain structure, which modulate the biological activities of a variety of target molecules derived from the protein scaffold library by specifically binding to the target molecules. Also, there is provided a method for constructing homo-/hetero-oligomers which allow multi-specificity binding to multiple targets by the tandem assembly monomeric Kringle domain variants using a linker. Additionally, there is provided a method for preparing multispecific monomers and multivalent monomers by grafting target-binding loops of a Kringle domain variant into non-binding loops of another Kringle domain variant with the same or different target binding specificity. Furthermore, a protein scaffold variant based on the Kringle domain structure that specifically binds to target molecules, DNA encoding the protein scaffold variant, or a method and composition for prevention, detection, diagnosis, treatment or relieving diseases or disorders, particularly cancers and other immune-related diseases, comprising: administering an effective amount of the related molecule to animals, preferably human.
摘要翻译：提供了一种Kringle结构域结构，其包括：除了保持Kringle结构域的结构支架重要的保守氨基酸残基之外，在氨基酸残基处诱导人工突变; 和蛋白质支架变体，其基于Kringle结构域结构，其通过特异性结合靶分子来调节衍生自蛋白质支架文库的各种靶分子的生物学活性。此外，提供了一种构建同 - 异寡聚物的方法，其允许使用接头通过串联组装单体Kringle结构域变体多特异性结合多个靶标。另外，提供了通过将Kringle结构域变体的靶结合环转移到具有相同或不同靶结合特异性的另一个Kringle结构域变体的非结合环中来制备多特异性单体和多价单体的方法。此外，基于特异性结合靶分子的Kringle结构域结构的蛋白质支架变体，编码蛋白质支架变体的DNA，或用于预防，检测，诊断，治疗或缓解疾病或病症，特别是癌症和其他免疫的方法和组合物相关疾病，包括：向动物，优选人类施用有效量的相关分子。

4. 发明申请

US20120021993A1 PROTEIN SCAFFOLD LIBRARY BASED ON KRINGLE DOMAIN STRUCTURE AND USES THEREOF 有权
标题翻译：基于结构域的蛋白质SCAFFOLD图书及其用途
公开(公告)号：US20120021993A1
公开(公告)日：2012-01-26
申请号：US13058810
申请日：2009-08-07
申请人： Yong-Sung Kim , Myung-Hee Kwon , Chang-Han Lee
发明人： Yong-Sung Kim , Myung-Hee Kwon , Chang-Han Lee
IPC分类号： A61K38/17 , C40B40/10 , A61P35/00 , C07K14/47 , C07K1/107 , A61P37/06 , C40B50/06 , C40B30/04
CPC分类号： C12N15/1044 , C40B40/10
摘要： There are provided a Kringle domain structure, comprising: inducing artificial mutations at amino acid residues except for conserved amino acid residues that are important to maintain the structural scaffold of a Kringle domain; and protein scaffold variants, based on the Kringle domain structure, which modulate the biological activities of a variety of target molecules derived from the protein scaffold library by specifically binding to the target molecules. Also, there is provided a method for constructing homo-/hetero-oligomers which allow multi-specificity binding to multiple targets by the tandem assembly monomeric Kringle domain variants using a linker. Additionally, there is provided a method for preparing multispecific monomers and multivalent monomers by grafting target-binding loops of a Kringle domain variant into non-binding loops of another Kringle domain variant with the same or different target binding specificity. Furthermore, a protein scaffold variant based on the Kringle domain structure that specifically binds to target molecules, DNA encoding the protein scaffold variant, or a method and composition for prevention, detection, diagnosis, treatment or relieving diseases or disorders, particularly cancers and other immune-related diseases, comprising: administering an effective amount of the related molecule to animals, preferably human.
摘要翻译：提供了一种Kringle结构域结构，其包括：除了保持Kringle结构域的结构支架重要的保守氨基酸残基之外，在氨基酸残基处诱导人工突变; 和蛋白质支架变体，其基于Kringle结构域结构，其通过特异性结合靶分子来调节衍生自蛋白质支架文库的各种靶分子的生物学活性。此外，提供了一种构建同 - 异寡聚物的方法，其允许使用接头通过串联组装单体Kringle结构域变体多特异性结合多个靶标。另外，提供了通过将Kringle结构域变体的靶结合环转移到具有相同或不同靶结合特异性的另一个Kringle结构域变体的非结合环中来制备多特异性单体和多价单体的方法。此外，基于特异性结合靶分子的Kringle结构域结构的蛋白质支架变体，编码蛋白质支架变体的DNA，或用于预防，检测，诊断，治疗或缓解疾病或病症，特别是癌症和其他免疫的方法和组合物相关疾病，包括：向动物，优选人类施用有效量的相关分子。

5. 发明申请

US20110159569A1 ANTI-NUCLEIC ACID ANTIBODY INDUCING CELL DEATH OF CANCER CELLS AND COMPOSITION FOR PREVENTING OR TREATING CANCERS COMPRISING THE SAME 审中-公开
标题翻译：抗核酸抗体诱导癌细胞细胞死亡和组合物，用于预防或治疗包括其的癌症
公开(公告)号：US20110159569A1
公开(公告)日：2011-06-30
申请号：US12990405
申请日：2009-04-16
申请人： Myung-Hee Kwon , Yong-Sung Kim , Ji-Young Jang
发明人： Myung-Hee Kwon , Yong-Sung Kim , Ji-Young Jang
IPC分类号： C12N9/16 , C07H21/04
CPC分类号： C07K16/44 , A61K2039/505 , C07K16/30 , C07K2317/622 , C07K2317/73 , C07K2317/77 , C07K2317/82 , C12N9/0002 , C12N9/22
摘要： There are provided an anti-nucleic acid antibody inducing cell death of cancer cells by invading normal cells; and a composition for preventing or treating cancers comprising the anti-nucleic acid antibody, which shows anticancer effect of an anti-nucleic acid antibody that shows cytotoxicity by damaging nucleic acid strands, that is, genetic information of a cancer cell when the anti-nucleic acid antibody, which has binding activity and degrading activity to the nucleic acid strands in cells at the same time, is overexpressed in the cancer cell, or flows in the cancer cell. Therefore, the composition for treating cancers may be useful to induce the selective cell death in cancer cells than in normal cells since the anti-nucleic acid antibody very easily permeates into the cancer cells due to the excellent selectivity, compared to the normal cells.
摘要翻译：提供通过侵入正常细胞诱导癌细胞的细胞死亡的抗核酸抗体; 以及用于预防或治疗包含抗核酸抗体的癌症的组合物，其显示通过损伤核酸链显示细胞毒性的抗核酸抗体的抗癌作用，即抗核酸抗体的抗核酸抗体，即抗核酸抗体的遗传信息同时对细胞中的核酸链具有结合活性和降解活性的酸抗体在癌细胞中过表达，或在癌细胞中流动。因此，与正常细胞相比，用于治疗癌症的组合物可以用于诱导癌细胞中的选择性细胞死亡，因为与正常细胞相比，抗核酸抗体由于优异的选择性而非常容易地渗入癌细胞。

6. 发明授权

US08487352B2 Metal oxide semiconductor (MOS) transistors having a recessed gate electrode 有权
标题翻译：具有凹陷栅电极的金属氧化物半导体（MOS）晶体管
公开(公告)号：US08487352B2
公开(公告)日：2013-07-16
申请号：US13236389
申请日：2011-09-19
申请人： Yong-Sung Kim , Tae-Young Chung
发明人： Yong-Sung Kim , Tae-Young Chung
IPC分类号： H01L27/148
CPC分类号： H01L29/7834 , H01L29/51 , H01L29/66621
摘要： A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source region to the drain region. A channel recess is disposed in the active region between the source and drain regions. The channel recess has a convex surface when viewed from a cross-sectional view taken along a second direction orthogonal to the first direction. A gate electrode fills the channel recess and crosses the active region in the second direction. A gate insulating layer is interposed between the gate electrode and the active region.
摘要翻译：金属氧化物半导体（MOS）包括设置在半导体衬底中以限定有源区的隔离层。源极区域和漏极区域设置在有源区域的两侧，使得从源极区域到漏极区域限定第一方向。通道凹槽设置在源区和漏区之间的有源区中。当从沿着与第一方向正交的第二方向截取的横截面视图观察时，通道凹部具有凸形表面。栅电极填充通道凹槽并沿第二方向跨过有源区。栅极绝缘层插入在栅电极和有源区之间。

7. 发明授权

US07625515B2 Fabrication of layer-by-layer photonic crystals using two polymer microtransfer molding 失效
标题翻译：使用两个聚合物微转移模塑制造逐层光子晶体
公开(公告)号：US07625515B2
公开(公告)日：2009-12-01
申请号：US11455486
申请日：2006-06-19
申请人： Jae-Hwang Lee , Kai-Ming Ho , Yong-Sung Kim , Kristen Constant , Chang-Hwan Kim
发明人： Jae-Hwang Lee , Kai-Ming Ho , Yong-Sung Kim , Kristen Constant , Chang-Hwan Kim
IPC分类号： H01L21/00
CPC分类号： B29C41/36 , B29C33/42 , B29C39/025 , B29C39/026 , B29C41/22 , B82Y20/00 , G02B6/1225 , G02B6/138 , Y10T29/49002
摘要： A method of manufacturing photonic band gap structures operable in the optical spectrum has been presented. The method comprises the steps of filling a plurality of grooves of an elastomeric mold with a UV curable first polymer, each groove in parallel with each other and partially curing the first polymer. A second polymer is coated on the first polymer. A substrate or a multi-layer polymer structure is placed on the filled mold and the resulting structure is exposed to UV light (i.e., is UV cured). The mold is peeled away from the first and second polymers such that a layer of polymer rods is formed on the substrate/multi-layer polymer structure. The process is repeated until a desired number of layers have been formed. The multi-layer structure can be used to create ceramic and metallic photonic band gaps by infiltration, electro-deposition, and/or metal coating.
摘要翻译：已经提出了在光谱中可操作的制造光子带隙结构的方法。该方法包括以下步骤：用UV可固化的第一聚合物填充弹性体模具的多个凹槽，每个凹槽彼此平行并部分固化第一聚合物。将第二聚合物涂覆在第一聚合物上。将基底或多层聚合物结构放置在填充的模具上，并将所得结构暴露于UV光（即，UV固化）。将模具从第一和第二聚合物剥离，使得在基底/多层聚合物结构上形成聚合物棒层。重复该过程，直到形成所需数量的层。多层结构可用于通过渗透，电沉积和/或金属涂层来产生陶瓷和金属光子带隙。

8. 发明授权

US07488654B2 Fabrication of local damascene finFETs using contact type nitride damascene mask 失效
公开(公告)号：US07488654B2
公开(公告)日：2009-02-10
申请号：US11508992
申请日：2006-08-24
申请人： Yong-Sung Kim , Tae-Young Chung
发明人： Yong-Sung Kim , Tae-Young Chung
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L27/1211 , H01L29/66795
摘要： Disclosed are methods for forming FinFETs using a first hard mask pattern to define active regions and a second hard mask to protect portions of the insulating regions between active regions. The resulting field insulating structure has three distinct regions distinguished by the vertical offset from a reference plane defined by the surface of the active regions. These three regions will include a lower surface found in the recessed openings resulting from the damascene etch, an intermediate surface and an upper surface on the remaining portions of the lateral field insulating regions. The general correspondence between the reference plane and the intermediate surface will tend to suppress or eliminate residual gate electrode materials from this region during formation of the gate electrodes, thereby improving the electrical isolation between adjacent active regions and improving the performance of the resulting semiconductor devices.

9. 发明授权

US07413943B2 Method of fabricating gate of fin type transistor 有权
标题翻译：鳍型晶体管栅极的制造方法
公开(公告)号：US07413943B2
公开(公告)日：2008-08-19
申请号：US11460905
申请日：2006-07-28
申请人： Yong-Sung Kim , Tae-Young Chung , Soo-Ho Shin
发明人： Yong-Sung Kim , Tae-Young Chung , Soo-Ho Shin
IPC分类号： H01L21/336 , H01L31/062
CPC分类号： H01L21/823437 , H01L21/823412 , H01L29/66795 , H01L29/7851
摘要： A method of fabricating a gate of a fin type transistor includes forming hard masks to define active regions of a substrate. A shallow trench isolation method is performed to form a first device separation layer, and then an etch-back process is performed such that the active regions protrude. Sidewall protection layers are formed on sidewalls of the active region, and a second device separation layer is formed thereon, thereby obtaining a device isolation region. The sidewall protection layers include an insulation material with an etch selectivity with respect to an insulation material composing the device isolation region. The device isolation region is selectively etched to form recesses for a fin type active region. Dry etching and wet etching are performed on the silicon nitride to remove the hard masks and the sidewall protection layers, respectively. Gates are formed to fill the recesses.
摘要翻译：制造鳍式晶体管的栅极的方法包括形成硬掩模以限定衬底的有源区。执行浅沟槽隔离方法以形成第一器件分离层，然后执行回蚀处理，使得有源区域突出。侧壁保护层形成在有源区的侧壁上，并且在其上形成第二器件分离层，从而获得器件隔离区。侧壁保护层包括相对于构成器件隔离区域的绝缘材料具有蚀刻选择性的绝缘材料。选择性地蚀刻器件隔离区以形成翅片型有源区的凹槽。对氮化硅进行干蚀刻和湿蚀刻以分别去除硬掩模和侧壁保护层。形成门以填充凹部。

10. 发明授权

US07368778B2 DRAM having at least three layered impurity regions between channel holes and method of fabricating same 失效
标题翻译：在通道孔之间具有至少三层杂质区的DRAM及其制造方法
公开(公告)号：US07368778B2
公开(公告)日：2008-05-06
申请号：US11210705
申请日：2005-08-25
申请人： Jin-Woo Lee , Yong-Sung Kim , Tae-Young Chung
发明人： Jin-Woo Lee , Yong-Sung Kim , Tae-Young Chung
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0847 , H01L21/76895 , H01L27/10852 , H01L27/10876 , H01L27/10888 , H01L29/66621 , H01L29/66659
摘要： Disclosed is a dynamic random access memory (DRAM) comprising a transistor having channel holes formed in the channel region thereof and cell gate structures formed in the channel holes. At least three layered impurity regions are formed in a semiconductor substrate between the channel holes and the at least three layered impurity regions form a source region for the transistor.
摘要翻译：公开了一种动态随机存取存储器（DRAM），其包括晶体管，该晶体管具有在其沟道区中形成的沟道孔，并且形成在沟道孔中的单元栅极结构。在通道孔和至少三层杂质区之间的半导体衬底中形成至少三层杂质区，形成晶体管的源极区。

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