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1. 发明申请

US20070076773A1 Buried ridge waveguide laser diode 有权
标题翻译：埋脊波导激光二极管
公开(公告)号：US20070076773A1
公开(公告)日：2007-04-05
申请号：US11633739
申请日：2006-12-05
申请人： Su Hwan Oh , Ki Kim , Oh Kee Kwon , Yong Baek
发明人： Su Hwan Oh , Ki Kim , Oh Kee Kwon , Yong Baek
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/1039 , H01S5/2222 , H01S5/3211 , H01S5/3213 , H01S5/34306
摘要： Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.
摘要翻译：提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

2. 发明申请

US20060133440A1 Optical semiconductor device 审中-公开
标题翻译：光半导体器件
公开(公告)号：US20060133440A1
公开(公告)日：2006-06-22
申请号：US11170813
申请日：2005-06-30
申请人： Ki Kim , Chul Lee , Dong Lee , Jung Song , Eun Sim , Sung Kim , Yong Baek
发明人： Ki Kim , Chul Lee , Dong Lee , Jung Song , Eun Sim , Sung Kim , Yong Baek
IPC分类号： H01S5/20
CPC分类号： H01S5/3434 , B82Y20/00 , H01L33/06 , H01S5/2004 , H01S5/2009 , H01S5/3403 , H01S5/34373
摘要： Provided is an optical semiconductor device including: an active layer having at least one quantum well layer and at least one barrier layer; a clad layer formed adjacent to the active layer; and a tunneling barrier layer formed between the active layer and the clad layer to be connected to the quantum well layer and formed of a material having a band-gap energy larger than the barrier layer, whereby it is possible to improve the drive characteristics at a high temperature and a high drive current by increasing a confinement effect of carriers such as electrons and holes in the active layer.
摘要翻译：本发明提供一种光半导体装置，包括：有源层，具有至少一个量子阱层和至少一个阻挡层; 与活性层相邻形成的覆层; 以及形成在有源层和包层之间的隧道势垒层，以与量子阱层连接并由具有比阻挡层大的带隙能量的材料形成，从而可以提高在通过增加载体如电子和空穴在活性层中的约束效应，可以提高高温和高驱动电流。

3. 发明申请

US20050121680A1 Semiconductor laser and method for manufacturing the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20050121680A1
公开(公告)日：2005-06-09
申请号：US10785054
申请日：2004-02-25
申请人： Jung Song , Chul Lee , Ki Kim , Yong Baek
发明人： Jung Song , Chul Lee , Ki Kim , Yong Baek
IPC分类号： H01L21/00 , H01L33/00 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/32
CPC分类号： H01S5/227 , H01S5/209 , H01S5/223 , H01S5/3211 , H01S5/3213 , H01S2301/18
摘要： Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.
摘要翻译：提供了一种半导体激光器及其制造方法，该半导体激光器包括蚀刻到台面结构中的基板，有源层，包层，电流阻挡层，蚀刻停止层，欧姆接触层和电极，可以通过阻塞在BH激光器中的有源波导外部流过的漏电流来提高光输出与输入电流的比率。

4. 发明申请

US20060274995A1 Temperature-insensitive polymeric optical AWG device and manufacturing method therefor 失效
标题翻译：温度不敏感的聚合物光学AWG器件及其制造方法
公开(公告)号：US20060274995A1
公开(公告)日：2006-12-07
申请号：US11361204
申请日：2006-02-23
申请人： Jong Lee , Sun Park , Yong Baek
发明人： Jong Lee , Sun Park , Yong Baek
IPC分类号： G02B6/34
CPC分类号： G02B6/1221 , G02B6/12011 , G02B6/1203 , G02B2006/12176
摘要： Provided are a temperature-insensitive polymeric optical AWG device and a method of manufacturing the same. The temperature-insensitive polymeric optical AWG device includes: a substrate; an input waveguide formed on the substrate; an output waveguide formed on the substrate so as to correspond to the input waveguide; polymeric grating channel waveguides interposed between free propagation slab regions on the substrate between the input and output waveguides and having difference lengths; a plurality of hollow trenches formed by selectively etching a surface of the substrate under the polymeric grating channel waveguides and allowing the polymeric grating channel waveguides to freely thermally expand from the substrate depending on a temperature variation so as to compensate for refractive indexes of the polymeric grating channel waveguides varying with the temperature variation; and a shield layer shielding entrances of the hollow trenches so that the polymeric grating channel waveguides do not flow into the hollow trenches, so as to separate the polymeric grating channel waveguides from the substrate.
摘要翻译：提供了一种温度不敏感的聚合物光学AWG器件及其制造方法。温度不敏感的聚合物光学AWG器件包括：衬底; 形成在所述基板上的输入波导; 形成在所述基板上以对应于所述输入波导的输出波导; 聚合光栅通道波导插入在输入和输出波导之间的衬底上的自由传播板区域之间并且具有不同的长度; 通过在聚合物光栅通道波导下选择性地蚀刻基底表面而形成的多个中空沟槽，并且允许聚合物光栅通道波导根据温度变化从衬底自由热膨胀以便补偿聚合物光栅的折射率通道波导随温度变化而变化; 屏蔽层屏蔽中空沟槽的入口，使得聚合光栅通道波导不流入中空沟槽，从而将聚合光栅通道波导与基板分开。

5. 发明申请

US20060126157A1 Monolithic integrated semiconductor modulator-SOA-LED broad band light source and method of fabricating the same 审中-公开
标题翻译：单片集成半导体调制器 - SOA-LED宽带光源及其制造方法
公开(公告)号：US20060126157A1
公开(公告)日：2006-06-15
申请号：US11298387
申请日：2005-12-08
申请人： Moon Park , Sahang Park , Su Oh , Sung Kim , Kwang Oh , Yong Baek , Gyung Kim
发明人： Moon Park , Sahang Park , Su Oh , Sung Kim , Kwang Oh , Yong Baek , Gyung Kim
IPC分类号： H01S3/00
CPC分类号： H01S5/026 , H01S5/20 , H01S5/50
摘要： Provided is a monolithic integrated semiconductor broad band light source. In the monolithic integrated semiconductor broad band light source, an electro absorption modulator, a semiconductor optical amplifier, and a light emitting diode are integrated on an InP substrate. Ions are implanted among the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode to electrically insulate the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode from one another. Electrodes independently implant currents into the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode. In particular, it is important to form a current intercepting layer and electrically insulate electrodes from one another but optically connect the electrodes in terms of performance of the monolithic integrated semiconductor broad band light source. The semiconductor optical amplifier and the light emitting diode are integrated into an active layer. As a result, broad band light generated from the light emitting diode is amplified by the semiconductor optical amplifier and modulated by a modulator so as to fabricate a monolithic broad band light source.
摘要翻译：提供了一种单片集成半导体宽带光源。在单片集成半导体宽带光源中，在InP衬底上集成有电吸收调制器，半导体光放大器和发光二极管。将离子植入在电吸收调制器，半导体光放大器和发光二极管之间，以将电吸收调制器，半导体光放大器和发光二极管彼此电绝缘。电极独立地将电流注入到电吸收调制器，半导体光放大器和发光二极管中。特别地，重要的是形成电流截取层并且将电极彼此电绝缘，但是在单片集成半导体宽带光源的性能方面将电极光学连接。半导体光放大器和发光二极管集成到有源层中。结果，由发光二极管产生的宽带光被半导体光放大器放大并被调制器调制，以制造单片宽带光源。

6. 发明申请

US20060051030A1 Planar lightwave circuit type optical transceiver module 有权
标题翻译：平面光波电路式光收发模块
公开(公告)号：US20060051030A1
公开(公告)日：2006-03-09
申请号：US11188302
申请日：2005-07-25
申请人： Jong Lee , Sun Park , Joon Ahn , Yong Baek
发明人： Jong Lee , Sun Park , Joon Ahn , Yong Baek
IPC分类号： G02B6/42 , G02B6/28 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12007 , G02B2006/12109
摘要： Provided is a planar lightwave circuit (PLC) type optical transceiver module, in which for a diplex optical transceiver module that uses different wavelengths in upstream and downstream, an optical waveguide connected to a light-receiving unit is a multi-mode waveguide and an optical waveguide connected to the light-emitting unit is a single mode waveguide, and further, for a triplex optical transceiver module that uses one upstream wavelength and more than two different downstream wavelengths, an optical waveguide connected to the light-receiving unit, which is a waveguide-type photo diode, is a multi-mode waveguide and an optical waveguide connected to the light-emitting unit is a single mode waveguide, whereby even when there is an alignment error of a thin film filter due to irregularity provided in forming a trench, the optical waveguide connected to the light-receiving unit is formed wider than the optical waveguide connected to the light-emitting unit so that the loss during transmission of the optical signal to the light-receiving unit is minimized.
摘要翻译：提供了一种平面光波回路（PLC）型光收发模块，其中对于在上游和下游使用不同波长的双工光收发模块，连接到光接收单元的光波导是多模波导和光连接到发光单元的波导是单模波导，并且对于使用一个上行波长和多于两个不同下游波长的三重光收发器模块，连接到光接收单元的光波导是波导型光电二极管是多模波导，连接到发光单元的光波导是单模波导，即使当形成沟槽时由于不规则性而导致薄膜滤光器的取向误差连接到光接收单元的光波导形成为比连接到发光单元的光波导宽，从而在tra期间的损耗对光接收单元的光信号的保持最小化。

7. 发明申请

US20060127093A1 System and method for switching channels using tunable laser diodes 有权
公开(公告)号：US20060127093A1
公开(公告)日：2006-06-15
申请号：US11252401
申请日：2005-10-17
申请人： Sahng Park , Su Oh , Kwang Choi , Moon Park , Yong Baek , Kwang Oh
发明人： Sahng Park , Su Oh , Kwang Choi , Moon Park , Yong Baek , Kwang Oh
IPC分类号： H04J14/00
CPC分类号： H04J14/0282 , H04J14/0226 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J2014/0253
摘要： A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

8. 发明申请

US20050053349A1 Waveguide photodetector 审中-公开
标题翻译：波导光电探测器
公开(公告)号：US20050053349A1
公开(公告)日：2005-03-10
申请号：US10733235
申请日：2003-12-12
申请人： Jung Park , Yong Baek
发明人： Jung Park , Yong Baek
IPC分类号： G02B6/12 , G02B6/122 , G02B6/42 , G02B6/10
CPC分类号： G02B6/122 , G02B6/4202
摘要： The present invention relates to a waveguide photodetector having a good efficiency of coupling with an optical fiber or a PLC (Planar Light-wave Circuit). In order to increase size of mode beam and to effectively receive light from the optical fiber or the PLC, a thin absorbing layer is used as a core and a semiconductor having an index of refraction similar to that of the absorbing layer is used as a cladding layer. By doing so, it is possible to obtain a good efficiency of coupling with an optical fiber or a PLC. In addition, since a little amount of light proceeds along a waveguide, it is possible to obtain high operating speed even under a high power. Furthermore, by reducing difference between indexes of refraction of the absorbing layer and the cladding layer, it is possible to suppress the “carrier-trapping” generated from small difference between band gaps of the two materials.
摘要翻译：本发明涉及一种具有与光纤或PLC（平面光波电路）耦合的良好效率的波导光电检测器。为了增加模式光束的尺寸并且有效地接收来自光纤或PLC的光，使用薄的吸收层作为芯，并且将具有类似于吸收层的折射率的半导体用作包层层。通过这样做，可以获得与光纤或PLC耦合的良好效率。此外，由于沿着波导进行少量的光，所以即使在高功率下也可以获得高的运行速度。此外，通过减少吸收层和包层的折射率之间的差异，可以抑制由两种材料的带隙之间的小差异产生的“载流子捕获”。

9. 发明申请

US20070223551A1 Superluminescent diode and method of manufacturing the same 有权
标题翻译：超发光二极管及其制造方法
公开(公告)号：US20070223551A1
公开(公告)日：2007-09-27
申请号：US11635195
申请日：2006-12-07
申请人： Moon Park , Yong Baek , Kwang Oh
发明人： Moon Park , Yong Baek , Kwang Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/026 , H01S5/0425 , H01S5/101 , H01S5/2063 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3406 , H01S5/34306 , H01S5/4006
摘要： A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.
摘要翻译：公开了具有激光二极管（LD）区域和半导体光放大器（SOA）区域的1.55μmSLD及其制造方法。 SLD包括：具有LD区域的InP衬底和用于放大从LD区域发射的光的SOA区域; 具有BRS（埋脊条）结构的光波导，其具有形成在InP衬底上并从SOA区延伸到LD区的谐振带图案的有源层; 形成在SOA区域中的有源层上的第一电极，形成在LD区域中的有源层上并与第一电极电隔离的第二电极; 以及插入在第一电极和第二电极之间的电流阻挡区域，以将第一电极和第二电极彼此电隔离。

10. 发明申请

US20070133636A1 Waveguide pin photodiode having graded index distribution centering around optical absorption layer 失效
标题翻译：波导针光电二极管以光吸收层为中心具有渐变折射率分布
公开(公告)号：US20070133636A1
公开(公告)日：2007-06-14
申请号：US11481580
申请日：2006-07-06
申请人： Sahng Park , Eun-Deok Sim , Jeong Park , Jae Sim , Yong Baek
发明人： Sahng Park , Eun-Deok Sim , Jeong Park , Jae Sim , Yong Baek
IPC分类号： H01S5/00 , G02B6/10
CPC分类号： G02B6/12004 , H01L31/0304 , H01L31/105
摘要： A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.
摘要翻译：提供了一种波导PIN光电二极管。波导PIN光电二极管包括下导光层，光吸收层，上导光层和包覆层。下部光导件形成在基板上，并且光吸收层形成在下部光导层上。上光导层形成在光吸收层上，包层形成在上光导层上。下导光层，光吸收层和上导光层构成作为光波导的芯层，并且在深度方向上对称地形成渐变折射率分布，以具有最高折射率的光吸收层为中心指数。

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