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1. 发明授权

US07994527B2 High light extraction efficiency light emitting diode (LED) 有权
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：US07994527B2
公开(公告)日：2011-08-09
申请号：US11593268
申请日：2006-11-06
申请人： Steven P. DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Nichole Fellows , Akihiko Murai
发明人： Steven P. DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Nichole Fellows , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译：一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料表面，进入成形塑料光学元件被抽取到空气中。

2. 发明授权

US08334151B2 Method for fabricating a direct wafer bonded optoelectronic device 失效
标题翻译：制造直接晶圆键合光电器件的方法
公开(公告)号：US08334151B2
公开(公告)日：2012-12-18
申请号：US12752977
申请日：2010-04-01
申请人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/32 , H01S5/0215 , H01S5/0421 , H01S5/18347 , H01S5/18369 , H01S5/1838 , H01S5/32341
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
摘要翻译： An（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED），其中光通过导电ZnO。为（Al，Ga，In）N和ZnO晶圆制备平坦且干净的表面。然后在（Al，Ga，In）N和ZnO晶片之间进行晶片接合工艺，其中（Al，Ga，In）N和ZnO晶片被接合在一起，然后在氮气氛下在单轴压力下在设定温度一段时间。在晶片接合工艺之后，ZnO被成形为用于从LED内部增加光提取。

3. 发明申请

US20100187555A1 (Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATIONS, AND ITS FABRICATION METHOD 失效
标题翻译：（Al，Ga，In）N和ZnO直接用于光电子应用的结合结构及其制造方法
公开(公告)号：US20100187555A1
公开(公告)日：2010-07-29
申请号：US12752977
申请日：2010-04-01
申请人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/32 , H01S5/0215 , H01S5/0421 , H01S5/18347 , H01S5/18369 , H01S5/1838 , H01S5/32341
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
摘要翻译： An（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED），其中光通过导电ZnO。为（Al，Ga，In）N和ZnO晶圆制备平坦且干净的表面。然后在（Al，Ga，In）N和ZnO晶片之间进行晶片接合工艺，其中（Al，Ga，In）N和ZnO晶片被接合在一起，然后在氮气氛下在单轴压力下在设定温度一段时间。在晶片接合工艺之后，ZnO被成形为用于从LED内部增加光提取。

4. 发明授权

US07719020B2 (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method 无效
标题翻译：（Al，Ga，In）N和ZnO直接晶圆结合的光电应用及其制造方法
公开(公告)号：US07719020B2
公开(公告)日：2010-05-18
申请号：US11454691
申请日：2006-06-16
申请人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L29/22 , H01L29/04
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/32 , H01S5/0215 , H01S5/0421 , H01S5/18347 , H01S5/18369 , H01S5/1838 , H01S5/32341
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
摘要翻译： An（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED），其中光通过导电ZnO。为（Al，Ga，In）N和ZnO晶圆制备平坦且干净的表面。然后在（Al，Ga，In）N和ZnO晶片之间进行晶片接合工艺，其中（Al，Ga，In）N和ZnO晶片被接合在一起，然后在氮气氛下在单轴压力下在设定温度一段时间。在晶片接合工艺之后，ZnO被成形为用于从LED内部增加光提取。

5. 发明申请

US20070102721A1 High light extraction efficiency light emitting diode (LED) 有权
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：US20070102721A1
公开(公告)日：2007-05-10
申请号：US11593268
申请日：2006-11-06
申请人： Steven DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Fellows , Akihiko Murai
发明人： Steven DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Fellows , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译：一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料表面，进入成形塑料光学元件被抽取到空气中。

6. 发明授权

US07344958B2 Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications 失效
标题翻译：用于光电子应用的晶片接合方法（A1，In，Ga）N和Zn（S，Se）
公开(公告)号：US07344958B2
公开(公告)日：2008-03-18
申请号：US11175761
申请日：2005-07-06
申请人： Akihiko Murai , Lee McCarthy , Umesh K. Mishra , Steven P. DenBaars , Carsten Kruse , Stephan Figge , Detlef Hommel
发明人： Akihiko Murai , Lee McCarthy , Umesh K. Mishra , Steven P. DenBaars , Carsten Kruse , Stephan Figge , Detlef Hommel
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/0254 , H01L21/02557 , H01L21/0256 , H01L21/02664 , H01L21/187 , H01L33/0079
摘要： A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
摘要翻译：（Al，In，Ga）N和Zn（S，Se）之间的晶片接合结构的制造方法。可以使用Zn（S，Se）和MgS /（Zn，Cd）Se材料制造用于相对短的光波长的高反射和导电分布布拉格反射器（DBR）。使用晶片接合技术，这些高质量的DBR结构可以与GaN基光学器件结构组合。

7. 发明申请

US20100289043A1 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) THROUGH MULTIPLE EXTRACTORS 审中-公开
标题翻译：高亮度提取效率LED发光二极管（LED）通过多个萃取器
公开(公告)号：US20100289043A1
公开(公告)日：2010-11-18
申请号：US11940848
申请日：2007-11-15
申请人： David J. F. Aurelien , Claude C. A. Weisbuch , Akihiko Murai , Steven P. DenBaars
发明人： David J. F. Aurelien , Claude C. A. Weisbuch , Akihiko Murai , Steven P. DenBaars
IPC分类号： H01L33/58 , H01L21/28
CPC分类号： H01L33/20 , H01L33/10 , H01L2933/0083
摘要： An (Al,In,Ga)N and ZnO direct wafer bonded light emitting diode (LED), combined with a second light extractor acting as an additional light extraction method. This second light extraction method aims at extracting the light which has not been extracted by the ZnO structure, and more specifically the light which is trapped in the (Al,In,Ga)N layer. This second method is suited for light extraction from thin films, using surface patterning or texturing, or a photonic crystal acting as a diffraction grating. The combination of both the ZnO structure and the second light extraction method enables most of the emitted light from the LED to be extracted. In a more general extension of the present invention, the ZnO structure can be replaced by another material in order to achieve additional light extraction. In another extension, the (Al,In,Ga)N layer can be replaced by structures comprising other materials compositions, in order to achieve additional light extraction.
摘要翻译： An（Al，In，Ga）N和ZnO直接晶圆键合发光二极管（LED），与作为附加光提取方法的第二光提取器组合。该第二光提取方法旨在提取未被ZnO结构提取的光，更具体地说是捕获在（Al，In，Ga）N层中的光。该第二种方法适用于使用表面图案化或纹理化的薄膜，或用作衍射光栅的光子晶体进行光提取。 ZnO结构和第二光提取方法的组合使得能够提取来自LED的大部分发射光。在本发明的更一般的扩展中，为了实现额外的光提取，可以用另一种材料代替ZnO结构。在另一个延伸部分中，（Al，In，Ga）N层可以由包括其它材料组成的结构代替，以便实现额外的光提取。

8. 发明授权

US09018656B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09018656B2
公开(公告)日：2015-04-28
申请号：US13201853
申请日：2010-02-23
申请人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
发明人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/10 , H01L33/44 , H01L33/64
CPC分类号： H01L33/387 , H01L33/10 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
摘要翻译：发光装置包括安装基板和LED芯片，其包括n型氮化物半导体层，n型氮化物半导体层上的氮化物发光层，氮化物发光层上的p型氮化物半导体层，与p型氮化物半导体层的氮化物发光层相反的阳极电极以及n型氮化物半导体层上的阴极电极。安装基板具有图案化的导体，其通过凸块连接到阴极电极，并且还通过凸块连接到阳极电极。 LED芯片还包括在p型氮化物半导体层和阳极之间的一个或多个介电层，以具有类似于岛的布置。 p型氮化物半导体层具有与凸块重叠的第一区域。电介质层不形成在第一区域内。

9. 发明申请

US20130075776A1 LIGHT DISTRIBUTION CONTROLLER, LIGHT-EMITTING DEVICE USING THE SAME, AND METHOD FOR FABRICATING LIGHT DISTRIBUTION CONTROLLER 失效
标题翻译：光分配控制器，使用其的发光装置和制造光分配控制器的方法
公开(公告)号：US20130075776A1
公开(公告)日：2013-03-28
申请号：US13701998
申请日：2011-07-04
申请人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
发明人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
IPC分类号： G09F13/04 , H01L33/00 , H01L33/50
CPC分类号： G09F13/04 , G02B19/0028 , G02B19/0066 , G02B19/0071 , H01L33/005 , H01L33/50 , H01L33/58
摘要： A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.
摘要翻译：发光装置的配光控制器包括由设置在插入透明粘合剂的LED上的ZnO形成的第一光学部件和覆盖第一光学部件的第二光学部件。第一光学构件包括具有正六边形形状的开口的第一凹部，其面积逐渐增加。在第一凹部中，形成具有倾斜面的内壁面，其各自的底部由开口形状的六边形的一侧形成。在第一光学构件的外侧，形成各自具有梯形形状的外壁面。第二光学构件包括第二凹部，其布置成使得通过第一光学构件行进的光的光分布特性中的环形峰值处的光被全反射。

10. 发明申请

US20110248239A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20110248239A1
公开(公告)日：2011-10-13
申请号：US13141217
申请日：2009-12-21
申请人： Akihiko Murai
发明人： Akihiko Murai
IPC分类号： H01L33/06 , H01L33/42
CPC分类号： H01L33/20 , H01L33/08 , H01L33/38
摘要： A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.
摘要翻译：发光器件包括衬底和安装在衬底上的LED芯片。芯片包括：主体，其包括透明导体，该透明导体包括基部并从基部伸出以从基部渐尖; 光源，其包括分别形成在所述基座上的发光部; 形成在基座上的第一端子; 以及分别形成在发光部分上的第二端子。基板的导体图案包括：与第一端子电连接的第一导体; 以及分别与第二端子电连接的第二导体。

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