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1. 发明授权

US07755096B2 Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate 有权
标题翻译：单一或多色高效率发光二极管（LED）通过在图案化衬底上生长
公开(公告)号：US07755096B2
公开(公告)日：2010-07-13
申请号：US11923414
申请日：2007-10-24
申请人： Claude C. A. Weisbuch , David J. F. Aurelien , James S. Speck , Steven P. DenBaars
发明人： Claude C. A. Weisbuch , David J. F. Aurelien , James S. Speck , Steven P. DenBaars
IPC分类号： H01L29/22
CPC分类号： H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083
摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.
摘要翻译：具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。

2. 发明申请

US20100289043A1 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) THROUGH MULTIPLE EXTRACTORS 审中-公开
标题翻译：高亮度提取效率LED发光二极管（LED）通过多个萃取器
公开(公告)号：US20100289043A1
公开(公告)日：2010-11-18
申请号：US11940848
申请日：2007-11-15
申请人： David J. F. Aurelien , Claude C. A. Weisbuch , Akihiko Murai , Steven P. DenBaars
发明人： David J. F. Aurelien , Claude C. A. Weisbuch , Akihiko Murai , Steven P. DenBaars
IPC分类号： H01L33/58 , H01L21/28
CPC分类号： H01L33/20 , H01L33/10 , H01L2933/0083
摘要： An (Al,In,Ga)N and ZnO direct wafer bonded light emitting diode (LED), combined with a second light extractor acting as an additional light extraction method. This second light extraction method aims at extracting the light which has not been extracted by the ZnO structure, and more specifically the light which is trapped in the (Al,In,Ga)N layer. This second method is suited for light extraction from thin films, using surface patterning or texturing, or a photonic crystal acting as a diffraction grating. The combination of both the ZnO structure and the second light extraction method enables most of the emitted light from the LED to be extracted. In a more general extension of the present invention, the ZnO structure can be replaced by another material in order to achieve additional light extraction. In another extension, the (Al,In,Ga)N layer can be replaced by structures comprising other materials compositions, in order to achieve additional light extraction.
摘要翻译： An（Al，In，Ga）N和ZnO直接晶圆键合发光二极管（LED），与作为附加光提取方法的第二光提取器组合。该第二光提取方法旨在提取未被ZnO结构提取的光，更具体地说是捕获在（Al，In，Ga）N层中的光。该第二种方法适用于使用表面图案化或纹理化的薄膜，或用作衍射光栅的光子晶体进行光提取。 ZnO结构和第二光提取方法的组合使得能够提取来自LED的大部分发射光。在本发明的更一般的扩展中，为了实现额外的光提取，可以用另一种材料代替ZnO结构。在另一个延伸部分中，（Al，In，Ga）N层可以由包括其它材料组成的结构代替，以便实现额外的光提取。

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