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    • 3. 发明授权
    • Minimizing overetch during a chemical etching process
    • 在化学蚀刻过程中最小化过蚀刻
    • US5501766A
    • 1996-03-26
    • US269864
    • 1994-06-30
    • Steven G. BarbeeTony F. HeinzYiping HsiaoLeping LiEugene H. RatzlaffJustin W. Wong
    • Steven G. BarbeeTony F. HeinzYiping HsiaoLeping LiEugene H. RatzlaffJustin W. Wong
    • G01N27/02G01N27/46H01L21/00
    • G01N27/02
    • A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.
    • 公开了一种用于实时地原位监测化学蚀刻工艺的非接触式方法和装置,以使湿化学蚀刻剂浴中的至少一个晶片的过蚀刻最小化。 该方法包括以下步骤:在湿化学浴中提供两个导电电极,其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数,其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小值和最大值的时间以确定过蚀值。 将过蚀刻值与期望值进行比较以控制蚀刻工艺。 这种方法及其装置在湿化学蚀刻站中特别有用。
    • 7. 发明授权
    • Fixture for in-situ noncontact monitoring of wet chemical etching with
passive wafer restraint
    • 用于无源晶片约束的湿化学蚀刻的原位非接触监测的夹具
    • US5451289A
    • 1995-09-19
    • US269859
    • 1994-06-30
    • Steven G. BarbeeTony F. HeinzLeping LiEugene H. Ratzlaff
    • Steven G. BarbeeTony F. HeinzLeping LiEugene H. Ratzlaff
    • H01L21/00H01L21/66H01L21/673H01L21/687H01L21/306
    • H01L21/67313B24B37/013H01L21/67086H01L21/67253H01L22/26H01L2924/0002
    • A fixture for in-situ chemical etch monitoring of an etching process during etching of at least one wafer contained in a wafer carrier is disclosed. The fixture comprises a set of primary guide members for engaging and guiding a front portion of the wafer carrier. A set of rear guide members engages and guides a rear portion of the wafer carrier. A set of electrode arms is included for receiving a respective electrode and corresponding electrode wire thereon. A mounting plate establishes a prescribed spacing of the set of primary guide members with respect to the set of electrode arms. A means for self-locking the first wafer contained in the wafer boat is connected to the mounting plate and further positioned in a prescribed manner with respect to the set of primary guide members and the set of electrode arms. Lastly, a connecting means connects the mounting plate, the set of primary guide members, and the set of electrode arms to the set of rear guide members, whereby insertion of the wafer boat into the fixture establishes a prescribed distance between the set of electrode arms and the first wafer, and further wherein the first wafer is passively fixed by the self-locking means.
    • 公开了一种用于在蚀刻包含在晶片载体中的至少一个晶片的蚀刻过程中进行原位化学蚀刻监测的夹具。 夹具包括一组用于接合和引导晶片载体的前部的主导向构件。 一组后引导构件接合并引导晶片载体的后部。 包括一组电极臂用于在其上接收相应的电极和相应的电极线。 安装板相对于一组电极臂确定一组主导向构件的规定间隔。 用于自锁所述晶片舟皿中包含的第一晶片的装置被连接到所述安装板,并且相对于所述一组主引导构件和所述一组电极臂以规定的方式进一步定位。 最后,连接装置将安装板,一组主引导构件和一组电极臂连接到一组后引导构件,由此将晶片舟皿插入固定装置中在该组电极臂之间建立规定的距离 和所述第一晶片,并且其中所述第一晶片被所述自锁装置被动地固定。