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1. 发明授权

US5777433A High refractive index package material and a light emitting device encapsulated with such material 失效
$High refractive index package material and a light emitting device encapsulated with such material$
标题翻译：高折射率封装材料和用这种材料封装的发光器件
公开(公告)号：US5777433A
公开(公告)日：1998-07-07
申请号：US678276
申请日：1996-07-11
申请人： Steven D. Lester , Jeffrey N. Miller , Daniel B. Roitman
发明人： Steven D. Lester , Jeffrey N. Miller , Daniel B. Roitman
IPC分类号： H01L33/56 , H01L33/62 , H01J1/62
CPC分类号： H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2933/0091 , H01L33/62 , Y10S362/80
摘要： A high refractive index package material is described that encapsulates a semiconductor light emitting chip. The high refractive index package material is transparent to the light emitted from the chip and includes a host material and a plurality of nanoparticles held in the host material. The host material has a refractive index lower than that of the chip and is transparent to the light emitted from the chip. The nanoparticles are (1) formed from a material having a refractive index higher than that of the host material, (2) substantially smaller in size than the wavelength of the light emitted from the chip, (3) included in the host material at such a density that the effective refractive index of the high refractive index package material is higher than that of the host material without decreasing the transparency of the high refractive index package material.
摘要翻译：描述了封装半导体发光芯片的高折射率封装材料。高折射率包装材料对于从芯片发射的光是透明的，并且包括主体材料和保持在主体材料中的多个纳米颗粒。主体材料的折射率低于芯片的折射率，并且对于从芯片发射的光是透明的。所述纳米颗粒由（1）由折射率高于所述主体材料的材料形成，（2）尺寸比从所述芯片发射的光的波长小得多，（3）包括在所述主体材料中高折射率包装材料的有效折射率高于主体材料的有效折射率而不降低高折射率包装材料的透明度的密度。

2. 发明授权

US5719467A Organic electroluminescent device 失效
标题翻译：有机电致发光器件
公开(公告)号：US5719467A
公开(公告)日：1998-02-17
申请号：US508020
申请日：1995-07-27
申请人： Homer Antoniadis , Daniel B. Roitman , Jeffrey N. Miller
发明人： Homer Antoniadis , Daniel B. Roitman , Jeffrey N. Miller
IPC分类号： H05B33/20 , H01L51/50 , H01L51/52 , H05B33/12 , H05B33/14 , H05B33/26
CPC分类号： H01L51/5088 , H05B33/14 , H05B33/26 , H01L51/5206
摘要： An organic electroluminescent device with a conducting polymer layer beneath the hole transport layer. A conducting polymer layer of doped polyaniline (PANI) is spin-cast onto an indium-tin oxide (ITO) anode coating on a glass substrate. Then a hole transport layer, for example TPD or another aromatic tertiary amine, is vapor-deposited onto the conducting polymer layer, followed by an electron transport layer and a cathode. Polyester may be blended into the PANI before spin-casting and then removed by a selective solvent after the spincasting, leaving a microporous layer of PANI on the anode. The conducting polymer layer may instead be made of a .pi.-conjugated oxidized polymer or of TPD dispersed in a polymer binder that is doped with an electron-withdrawing compound. An additional layer of copper-phthalocyanine, or of TPD in a polymer binder, may be disposed between the conducting polymer layer and the hole transport layer. The conducting polymer layer may serve as the anode, in which case the ITO is omitted.
摘要翻译：一种在空穴传输层下方具有导电聚合物层的有机电致发光器件。将掺杂聚苯胺（PANI）的导电聚合物层自旋铸在玻璃基板上的氧化铟锡（ITO）阳极涂层上。然后将空穴传输层，例如TPD或另一种芳族叔胺，汽相沉积到导电聚合物层上，随后是电子传输层和阴极。在旋转浇铸之前，聚酯可以混合到PANI中，然后在旋转浇铸之后通过选择性溶剂除去，在阳极上留下微孔层的PANI。导电聚合物层可以替代地由分散在掺杂有吸电子化合物的聚合物粘合剂中的π-共轭氧化聚合物或TPD制成。可以在导电聚合物层和空穴传输层之间设置另外的铜 - 酞菁层或聚合物粘合剂中的TPD。导电聚合物层可以用作阳极，在这种情况下，省略了ITO。

3. 发明申请

US20100032703A1 EDGE-EMITTING LED ASSEMBLY 审中-公开
标题翻译：边缘发光LED组件
公开(公告)号：US20100032703A1
公开(公告)日：2010-02-11
申请号：US12579494
申请日：2009-10-15
申请人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
发明人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

4. 发明申请

US20090179229A1 OHMIC CONTACT ON p-TYPE GaN 失效
标题翻译： OHMIC接触p型GaN
公开(公告)号：US20090179229A1
公开(公告)日：2009-07-16
申请号：US12356310
申请日：2009-01-20
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

5. 发明授权

US5902688A Electroluminescent display device 失效
标题翻译：电致发光显示装置
公开(公告)号：US5902688A
公开(公告)日：1999-05-11
申请号：US687011
申请日：1996-07-16
申请人： Homer Antoniadis , Steven D. Lester , Jeffrey N. Miller
发明人： Homer Antoniadis , Steven D. Lester , Jeffrey N. Miller
IPC分类号： H01L51/52 , H05B33/10 , H05B33/22 , H05B33/26 , H05B33/00
CPC分类号： H01L27/3239 , H01L51/5203 , H05B33/10 , H05B33/22 , H05B33/26 , Y10S428/917
摘要： This disclosure provides an electroluminescent ("EL") display device having anode, cathode, insulator and organic EL layers. The anode and cathode layers sandwich the other two layers, and the insulator layer is patterned to selectively block flow of current through the EL layers, and thereby locally block generation of light. The patterned insulator layer allows a single panel to display multiple visual attributes, yet does not require electrode patterning. The patterned insulator can be fabricated using photoresist exposure and development procedures. The photoresist is laid on top of a commercially available substrate/electrode layered pair, and is developed to create an assembly that can be completed in a single vacuum deposition process. By etching a small region of the electrode from the commercially available layered pair, and by choosing a deposition frame that blocks deposition on a second, different small region, electrical terminals may be coupled to the panel with a reduced risk of an electrical short.
摘要翻译：本公开提供了具有阳极，阴极，绝缘体和有机EL层的电致发光（“EL”）显示装置。阳极和阴极层将其它两层夹在中间，并且对绝缘体层进行图案化以选择性地阻挡通过EL层的电流，从而局部地阻止光的产生。图案化绝缘体层允许单个面板显示多个视觉属性，但不需要电极图案化。可以使用光致抗蚀剂曝光和显影程序来制造图案化的绝缘体。将光致抗蚀剂铺设在市售的基底/电极分层对的顶部，并且被开发以产生可以在单个真空沉积工艺中完成的组件。通过从市售的分层对中蚀刻电极的小区域，并且通过选择在第二不同的小区域上阻挡沉积的沉积框架，电端子可以以降低的电气短路的风险耦合到面板。

6. 发明授权

US07635874B2 Edge-emitting LED assembly 有权
标题翻译：边缘发光LED组件
公开(公告)号：US07635874B2
公开(公告)日：2009-12-22
申请号：US11235592
申请日：2005-09-26
申请人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
发明人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光，并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

7. 发明授权

US07495314B2 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US07495314B2
公开(公告)日：2009-02-24
申请号：US11234993
申请日：2005-09-26
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

8. 发明授权

US5376229A Method of fabrication of adjacent coplanar semiconductor devices 失效
标题翻译：相邻共面半导体器件的制造方法
公开(公告)号：US5376229A
公开(公告)日：1994-12-27
申请号：US131835
申请日：1993-10-05
申请人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
发明人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
IPC分类号： H01L21/033 , H01L21/20 , H01L21/306 , B44C1/22
CPC分类号： H01L21/0331 , H01L21/02395 , H01L21/02546
摘要： A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
摘要翻译：一种用于处理提供的不同类型的共面半导体器件的方法。该方法包括以下步骤：形成用于在衬底上形成第一器件区域的第一层，在第一器件区域上形成外延半导体剥离层，去除第一器件区域的一部分以打开形成区域的第二器件区域，外延地沉积第二器件区域，以及去除剥离层以使剩余在衬底上的第一和第二器件区域。

9. 发明授权

US07473941B2 Structures for reducing operating voltage in a semiconductor device 失效
标题翻译：用于降低半导体器件中的工作电压的结构
公开(公告)号：US07473941B2
公开(公告)日：2009-01-06
申请号：US11203917
申请日：2005-08-15
申请人： Virginia M. Robbins , Steven D. Lester , Jeffrey N. Miller , David P. Bour
发明人： Virginia M. Robbins , Steven D. Lester , Jeffrey N. Miller , David P. Bour
IPC分类号： H01L33/00
CPC分类号： H01S5/305
摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.
摘要翻译：发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

10. 发明授权

US06953702B2 Fixed wavelength vertical cavity optical devices and method of manufacture therefor 失效
标题翻译：固定波长垂直腔光学器件及其制造方法
公开(公告)号：US06953702B2
公开(公告)日：2005-10-11
申请号：US10151631
申请日：2002-05-16
申请人： Jeffrey N. Miller , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01S5/183 , H01S5/00 , H01S5/02 , H01S5/40 , H01S5/42 , H01L21/20
CPC分类号： H01S5/18358 , H01S5/0014 , H01S5/0205 , H01S5/18341 , H01S5/18366 , H01S5/4087 , H01S5/423
摘要： Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.
摘要翻译：提供了垂直腔光学器件及其制造方法，其中该方法包括在晶片上部分地形成第一垂直腔光学器件，调整第一垂直腔光学器件的激光波长，以及固定第一垂直腔光学器件的激光波长垂直腔光学器件完成其形成。

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