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1. 发明授权

US5719467A Organic electroluminescent device 失效
标题翻译：有机电致发光器件
公开(公告)号：US5719467A
公开(公告)日：1998-02-17
申请号：US508020
申请日：1995-07-27
申请人： Homer Antoniadis , Daniel B. Roitman , Jeffrey N. Miller
发明人： Homer Antoniadis , Daniel B. Roitman , Jeffrey N. Miller
IPC分类号： H05B33/20 , H01L51/50 , H01L51/52 , H05B33/12 , H05B33/14 , H05B33/26
CPC分类号： H01L51/5088 , H05B33/14 , H05B33/26 , H01L51/5206
摘要： An organic electroluminescent device with a conducting polymer layer beneath the hole transport layer. A conducting polymer layer of doped polyaniline (PANI) is spin-cast onto an indium-tin oxide (ITO) anode coating on a glass substrate. Then a hole transport layer, for example TPD or another aromatic tertiary amine, is vapor-deposited onto the conducting polymer layer, followed by an electron transport layer and a cathode. Polyester may be blended into the PANI before spin-casting and then removed by a selective solvent after the spincasting, leaving a microporous layer of PANI on the anode. The conducting polymer layer may instead be made of a .pi.-conjugated oxidized polymer or of TPD dispersed in a polymer binder that is doped with an electron-withdrawing compound. An additional layer of copper-phthalocyanine, or of TPD in a polymer binder, may be disposed between the conducting polymer layer and the hole transport layer. The conducting polymer layer may serve as the anode, in which case the ITO is omitted.
摘要翻译：一种在空穴传输层下方具有导电聚合物层的有机电致发光器件。将掺杂聚苯胺（PANI）的导电聚合物层自旋铸在玻璃基板上的氧化铟锡（ITO）阳极涂层上。然后将空穴传输层，例如TPD或另一种芳族叔胺，汽相沉积到导电聚合物层上，随后是电子传输层和阴极。在旋转浇铸之前，聚酯可以混合到PANI中，然后在旋转浇铸之后通过选择性溶剂除去，在阳极上留下微孔层的PANI。导电聚合物层可以替代地由分散在掺杂有吸电子化合物的聚合物粘合剂中的π-共轭氧化聚合物或TPD制成。可以在导电聚合物层和空穴传输层之间设置另外的铜 - 酞菁层或聚合物粘合剂中的TPD。导电聚合物层可以用作阳极，在这种情况下，省略了ITO。

2. 发明授权

US5902688A Electroluminescent display device 失效
标题翻译：电致发光显示装置
公开(公告)号：US5902688A
公开(公告)日：1999-05-11
申请号：US687011
申请日：1996-07-16
申请人： Homer Antoniadis , Steven D. Lester , Jeffrey N. Miller
发明人： Homer Antoniadis , Steven D. Lester , Jeffrey N. Miller
IPC分类号： H01L51/52 , H05B33/10 , H05B33/22 , H05B33/26 , H05B33/00
CPC分类号： H01L27/3239 , H01L51/5203 , H05B33/10 , H05B33/22 , H05B33/26 , Y10S428/917
摘要： This disclosure provides an electroluminescent ("EL") display device having anode, cathode, insulator and organic EL layers. The anode and cathode layers sandwich the other two layers, and the insulator layer is patterned to selectively block flow of current through the EL layers, and thereby locally block generation of light. The patterned insulator layer allows a single panel to display multiple visual attributes, yet does not require electrode patterning. The patterned insulator can be fabricated using photoresist exposure and development procedures. The photoresist is laid on top of a commercially available substrate/electrode layered pair, and is developed to create an assembly that can be completed in a single vacuum deposition process. By etching a small region of the electrode from the commercially available layered pair, and by choosing a deposition frame that blocks deposition on a second, different small region, electrical terminals may be coupled to the panel with a reduced risk of an electrical short.
摘要翻译：本公开提供了具有阳极，阴极，绝缘体和有机EL层的电致发光（“EL”）显示装置。阳极和阴极层将其它两层夹在中间，并且对绝缘体层进行图案化以选择性地阻挡通过EL层的电流，从而局部地阻止光的产生。图案化绝缘体层允许单个面板显示多个视觉属性，但不需要电极图案化。可以使用光致抗蚀剂曝光和显影程序来制造图案化的绝缘体。将光致抗蚀剂铺设在市售的基底/电极分层对的顶部，并且被开发以产生可以在单个真空沉积工艺中完成的组件。通过从市售的分层对中蚀刻电极的小区域，并且通过选择在第二不同的小区域上阻挡沉积的沉积框架，电端子可以以降低的电气短路的风险耦合到面板。

3. 发明授权

US5777433A High refractive index package material and a light emitting device encapsulated with such material 失效
$High refractive index package material and a light emitting device encapsulated with such material$
标题翻译：高折射率封装材料和用这种材料封装的发光器件
公开(公告)号：US5777433A
公开(公告)日：1998-07-07
申请号：US678276
申请日：1996-07-11
申请人： Steven D. Lester , Jeffrey N. Miller , Daniel B. Roitman
发明人： Steven D. Lester , Jeffrey N. Miller , Daniel B. Roitman
IPC分类号： H01L33/56 , H01L33/62 , H01J1/62
CPC分类号： H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2933/0091 , H01L33/62 , Y10S362/80
摘要： A high refractive index package material is described that encapsulates a semiconductor light emitting chip. The high refractive index package material is transparent to the light emitted from the chip and includes a host material and a plurality of nanoparticles held in the host material. The host material has a refractive index lower than that of the chip and is transparent to the light emitted from the chip. The nanoparticles are (1) formed from a material having a refractive index higher than that of the host material, (2) substantially smaller in size than the wavelength of the light emitted from the chip, (3) included in the host material at such a density that the effective refractive index of the high refractive index package material is higher than that of the host material without decreasing the transparency of the high refractive index package material.
摘要翻译：描述了封装半导体发光芯片的高折射率封装材料。高折射率包装材料对于从芯片发射的光是透明的，并且包括主体材料和保持在主体材料中的多个纳米颗粒。主体材料的折射率低于芯片的折射率，并且对于从芯片发射的光是透明的。所述纳米颗粒由（1）由折射率高于所述主体材料的材料形成，（2）尺寸比从所述芯片发射的光的波长小得多，（3）包括在所述主体材料中高折射率包装材料的有效折射率高于主体材料的有效折射率而不降低高折射率包装材料的透明度的密度。

4. 发明申请

US20120012877A1 Quantum Dot White and Colored Light-Emitting Devices 有权
标题翻译：量子点白色和彩色发光器件
公开(公告)号：US20120012877A1
公开(公告)日：2012-01-19
申请号：US13208169
申请日：2011-08-11
申请人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
发明人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
IPC分类号： H01L33/50 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译：一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。选择量子点的尺寸分布以允许从其发射特定颜色的光。从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。

5. 发明申请

US20100032703A1 EDGE-EMITTING LED ASSEMBLY 审中-公开
标题翻译：边缘发光LED组件
公开(公告)号：US20100032703A1
公开(公告)日：2010-02-11
申请号：US12579494
申请日：2009-10-15
申请人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
发明人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

6. 发明申请

US20090179229A1 OHMIC CONTACT ON p-TYPE GaN 失效
标题翻译： OHMIC接触p型GaN
公开(公告)号：US20090179229A1
公开(公告)日：2009-07-16
申请号：US12356310
申请日：2009-01-20
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

7. 发明授权

US08362684B2 Quantum dot white and colored light-emitting devices 有权
标题翻译：量子点白色和彩色发光装置
公开(公告)号：US08362684B2
公开(公告)日：2013-01-29
申请号：US13465553
申请日：2012-05-07
申请人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
发明人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
IPC分类号： H01L51/00
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译：一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。选择量子点的尺寸分布以允许从其发射特定颜色的光。从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。

8. 发明授权

US07629968B2 Methods and systems for detecting selections on a touch screen display 失效
标题翻译：用于检测触摸屏显示器上的选择的方法和系统
公开(公告)号：US07629968B2
公开(公告)日：2009-12-08
申请号：US11193155
申请日：2005-07-29
申请人： Jeffrey N. Miller , Mark M. Butterworth , Rene P. Helbing
发明人： Jeffrey N. Miller , Mark M. Butterworth , Rene P. Helbing
IPC分类号： G09G5/00
CPC分类号： G06F3/0428 , G06F2203/04109
摘要： Light beam focusing components direct light from the top surface of a touch screen display to one or more imagers. The imager or imagers capture one or more images of the top surface of the touch screen display. A processing unit analyzes the image or images to determine the position of an input device on or near the top surface of the touch screen display.
摘要翻译：光束聚焦组件将光从触摸屏显示器的顶表面引导到一个或多个成像器。成像器或成像器捕获触摸屏显示器顶表面的一个或多个图像。处理单元分析图像或图像以确定在触摸屏显示器的顶表面上或附近的输入设备的位置。

9. 发明授权

US06804059B2 Wide-band tunable optical filter using electroholograms written into photorefractive crystals 失效
$Wide-band tunable optical filter using electroholograms written into photorefractive crystals$
标题翻译：宽带可调光滤波器，使用电折射写入光折变晶体
公开(公告)号：US06804059B2
公开(公告)日：2004-10-12
申请号：US10033201
申请日：2001-12-27
申请人： Ali R. Motamedi , Douglas M. Baney , Jeffrey N. Miller , Marshall T. Depue
发明人： Ali R. Motamedi , Douglas M. Baney , Jeffrey N. Miller , Marshall T. Depue
IPC分类号： G02B518
CPC分类号： G02B5/203 , G02F1/0338 , G02F2203/055 , G03H2260/54 , H04Q2011/0018 , H04Q2011/0022 , H04Q2011/0035
摘要： A tunable optical filter utilizes multiple electroholographic (EH) gratings with different center wavelengths to filter an optical signal over a wide wavelength range. The EH gratings are connected such that an input optical signal passes through at least one of the EH gratings. The EH gratings are activated and tuned by electrode pairs that are controlled through a voltage controller. The tunable optical filter is coarse tuned by activating the EH gratings having a wavelength range that includes the center wavelength that is to be filtered and fine tuned by adjusting the voltage that is applied across the activated EH gratings.
摘要翻译：可调光滤波器利用具有不同中心波长的多个电子照相（EH）光栅来在宽波长范围内对光信号进行滤波。 EH光栅被连接成使得输入光信号通过至少一个EH光栅。 EH光栅通过电压控制器控制的电极对被激活和调谐。通过激活具有包括待滤波的中心波长的波长范围的EH光栅，通过调节施加在激活的EH光栅上的电压进行微调，可调谐滤光器被粗调。

10. 发明授权

US4883770A Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication 失效
标题翻译：选择性NIPI掺杂超晶格接触和其他由阴影掩模制造形成的半导体器件结构
公开(公告)号：US4883770A
公开(公告)日：1989-11-28
申请号：US298794
申请日：1989-01-17
申请人： Gottfried H. Dohler , Ghulam Hasnain , Jeffrey N. Miller
发明人： Gottfried H. Dohler , Ghulam Hasnain , Jeffrey N. Miller
IPC分类号： H01L21/203 , H01L21/28 , H01L29/15 , H01L31/0352
CPC分类号： B82Y20/00 , H01L21/02381 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02573 , H01L21/28 , H01L29/157 , H01L31/035263 , Y10S148/026 , Y10S148/041 , Y10S148/072 , Y10S148/104 , Y10S148/16 , Y10S148/169 , Y10S438/944
摘要： A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.
摘要翻译：分子束外延（MBE）工艺，其中衬底的一些部分被荫罩遮蔽以接收在MBE工艺中使用的至少一个分子束。该方法能够产生具有选择性接触的NIPI超晶格，其远远优于目前可以生产的那些。这种技术还可以产生各种各样的NIPI器件以及其他类型的IC结构。

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