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1. 发明授权

US07554334B2 Matching network characterization using variable impedance analysis 失效
标题翻译：使用可变阻抗分析匹配网络表征
公开(公告)号：US07554334B2
公开(公告)日：2009-06-30
申请号：US11536197
申请日：2006-09-28
申请人： Steven C. Shannon , Daniel J. Hoffman , Steven Lane , Walter R. Merry , Jivko Dinev
发明人： Steven C. Shannon , Daniel J. Hoffman , Steven Lane , Walter R. Merry , Jivko Dinev
IPC分类号： G01R31/02
CPC分类号： H03H7/38 , H03H11/28
摘要： Embodiments of a method of calculating the equivalent series resistance of a matching network using variable impedance analysis and matching networks analyzed using the same are provided herein. In one embodiment, a method of calculating the equivalent series resistance of a matching network includes the steps of connecting the matching network to a load; measuring an output of the matching network over a range of load impedances; and calculating the equivalent series resistance of the matching network based upon a relationship between the measured output and the load resistance. The load may be a surrogate load or may be a plasma formed in a process chamber.
摘要翻译：本文提供了使用可变阻抗分析和使用其分析的匹配网络来计算匹配网络的等效串联电阻的方法的实施例。在一个实施例中，计算匹配网络的等效串联电阻的方法包括将匹配网络连接到负载的步骤; 在一定范围的负载阻抗上测量匹配网络的输出; 并根据测量输出与负载电阻之间的关系计算匹配网络的等效串联电阻。负载可以是替代负载，也可以是在处理室中形成的等离子体。

2. 发明申请

US20080087381A1 MATCHING NETWORK CHARACTERIZATION USING VARIABLE IMPEDANCE ANALYSIS 失效
标题翻译：使用可变阻抗分析匹配网络特征
公开(公告)号：US20080087381A1
公开(公告)日：2008-04-17
申请号：US11536197
申请日：2006-09-28
申请人： STEVEN C. SHANNON , Daniel J. Hoffman , Steven Lane , Walter R. Merry , Jivko Dinev
发明人： STEVEN C. SHANNON , Daniel J. Hoffman , Steven Lane , Walter R. Merry , Jivko Dinev
IPC分类号： C23F1/00
CPC分类号： H03H7/38 , H03H11/28
摘要： Embodiments of a method of calculating the equivalent series resistance of a matching network using variable impedance analysis and matching networks analyzed using the same are provided herein. In one embodiment, a method of calculating the equivalent series resistance of a matching network includes the steps of connecting the matching network to a load; measuring an output of the matching network over a range of load impedances; and calculating the equivalent series resistance of the matching network based upon a relationship between the measured output and the load resistance. The load may be a surrogate load or may be a plasma formed in a process chamber.
摘要翻译：本文提供了使用可变阻抗分析和使用其分析的匹配网络来计算匹配网络的等效串联电阻的方法的实施例。在一个实施例中，计算匹配网络的等效串联电阻的方法包括将匹配网络连接到负载的步骤; 在一定范围的负载阻抗上测量匹配网络的输出; 并根据测量输出与负载电阻之间的关系计算匹配网络的等效串联电阻。负载可以是替代负载，也可以是在处理室中形成的等离子体。

3. 发明申请

US20100099266A1 ETCH REACTOR SUITABLE FOR ETCHING HIGH ASPECT RATIO FEATURES 审中-公开
标题翻译： ETCH反应器适用于蚀刻高比例特征
公开(公告)号：US20100099266A1
公开(公告)日：2010-04-22
申请号：US12563526
申请日：2009-09-21
申请人： Manfred Oswald , Jivko Dinev , Jan Rupf , Markus Meye , Francesco Maletta , Uwe Leucke , Ron Tilger , Farid Abooameri , Alexander Matyushkin , Denis Koosau , Xiaoping Zhou , Thorsten Lehmann , Declan Scanlan
发明人： Manfred Oswald , Jivko Dinev , Jan Rupf , Markus Meye , Francesco Maletta , Uwe Leucke , Ron Tilger , Farid Abooameri , Alexander Matyushkin , Denis Koosau , Xiaoping Zhou , Thorsten Lehmann , Declan Scanlan
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32045 , H01J37/32009 , H01J2237/334
摘要： Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixture of the reactor, maintaining a plasma formed from the gas mixture, wherein bias power and RF power provided the reactor are pulsed, and etching the silicon layer in the presence of the plasma.
摘要翻译：本发明的实施例提供一种能够等离子体蚀刻高纵横比特征的方法和装置。在一个实施例中，提供了一种用于蚀刻的方法，其包括提供具有设置在蚀刻反应器中的硅层上的图案化掩模的衬底，提供反应器的气体混合物，保持由气体混合物形成的等离子体，其中偏置功率和 RF电源提供反应器是脉冲的，并且在存在等离子体的情况下蚀刻硅层。

4. 发明申请

US20120091098A1 HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVELY COUPLED PLASMA REACTOR WITH IMPROVED UNIFORMITY 有权
标题翻译：具有改进均匀性的电感耦合等离子体反应器中的高效气体分离
公开(公告)号：US20120091098A1
公开(公告)日：2012-04-19
申请号：US13270623
申请日：2011-10-11
申请人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
发明人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
IPC分类号： C23F1/00 , C23C16/448 , C23C16/513 , C23F1/08
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3211
摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要翻译：本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。一个实施例提供等离子体室。等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

5. 发明授权

US09023227B2 Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber 有权
标题翻译：在电感耦合等离子体（ICP）室中，增加了沉积效率和较高的室电导率，并提高了源功率的增加
公开(公告)号：US09023227B2
公开(公告)日：2015-05-05
申请号：US13480967
申请日：2012-05-25
申请人： Jivko Dinev , Saravjeet Singh , Khalid M. Sirajuddin , Tong Liu , Puneet Bajaj , Rohit Mishra , Sonal A. Srivastava , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Jivko Dinev , Saravjeet Singh , Khalid M. Sirajuddin , Tong Liu , Puneet Bajaj , Rohit Mishra , Sonal A. Srivastava , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： B44C1/22 , H01L21/3065 , H01L21/768
CPC分类号： H01L21/30655 , H01L21/76898
摘要： Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).
摘要翻译：本文描述的实施例通常涉及衬底处理系统和相关方法，例如蚀刻/沉积方法。该方法包括：（A）在蚀刻反应器中设置在衬底上的第一层上沉积保护层，其中在沉积保护层的同时施加4500瓦特或更大的等离子体源功率，（B）蚀刻保护层中的保护层蚀刻反应器，其中施加4500瓦或更大的等离子体源功率，同时蚀刻保护层，和（C）蚀刻蚀刻反应器中的第一层，其中施加4500瓦特或更大的等离子体源功率，同时蚀刻第一层，其中沉积保护层（A）的时间包括小于用于沉积保护层（A）的总循环时间的30％，蚀刻保护层（B）和蚀刻第一层（ C）。

6. 发明申请

US20090294101A1 FAST SUBSTRATE SUPPORT TEMPERATURE CONTROL 有权
标题翻译：快速基板支持温度控制
公开(公告)号：US20090294101A1
公开(公告)日：2009-12-03
申请号：US12132101
申请日：2008-06-03
申请人： RICHARD FOVELL , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
发明人： RICHARD FOVELL , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
IPC分类号： F28D15/00
CPC分类号： F28D15/00 , F28D2021/0077 , H01L21/67109 , H01L21/67248
摘要： Methods and apparatus for controlling the temperature of a substrate support are provided herein. In some embodiments, an apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.
摘要翻译：本文提供了用于控制基板支撑件的温度的方法和装置。在一些实施例中，用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。第一和第二温度可以相同或不同。可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

7. 发明授权

US08920599B2 High efficiency gas dissociation in inductively coupled plasma reactor with improved uniformity 有权
标题翻译：电感耦合等离子体反应器中高效率的气体离解具有改善的均匀性
公开(公告)号：US08920599B2
公开(公告)日：2014-12-30
申请号：US13270623
申请日：2011-10-11
申请人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
发明人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , C23C16/507
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3211
摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要翻译：本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。一个实施例提供等离子体室。等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

8. 发明授权

US08596336B2 Substrate support temperature control 有权
标题翻译：基板支持温度控制
公开(公告)号：US08596336B2
公开(公告)日：2013-12-03
申请号：US12132101
申请日：2008-06-03
申请人： Richard Fovell , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
发明人： Richard Fovell , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
IPC分类号： F22B37/00 , G05D9/00 , B05C11/00
CPC分类号： F28D15/00 , F28D2021/0077 , H01L21/67109 , H01L21/67248
摘要： Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.
摘要翻译：用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。第一和第二温度可以相同或不同。可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

9. 发明授权

US08475625B2 Apparatus for etching high aspect ratio features 有权
公开(公告)号：US08475625B2
公开(公告)日：2013-07-02
申请号：US11381523
申请日：2006-05-03
申请人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly A. McDonough , Jivko Dinev , Farid Abooameri , David E. Gutierrez , Jim Zhongyi He , Robert S. Clark , Dennis M. Koosau , Jeffrey William Dietz , Declan Scanlan , Subhash Deshmukh , John P. Holland , Alexander Paterson
发明人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly A. McDonough , Jivko Dinev , Farid Abooameri , David E. Gutierrez , Jim Zhongyi He , Robert S. Clark , Dennis M. Koosau , Jeffrey William Dietz , Declan Scanlan , Subhash Deshmukh , John P. Holland , Alexander Paterson
IPC分类号： H01L21/3065
CPC分类号： H01J37/3266 , H01J37/3244 , H01J37/32706 , H01J2237/3347
摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

10. 发明申请

US20070256785A1 APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES 有权
公开(公告)号：US20070256785A1
公开(公告)日：2007-11-08
申请号：US11381523
申请日：2006-05-03
申请人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly McDonough , Jivko Dinev , Farid Abooameri , David Gutierrez , Jim He , Robert Clark , Dennis Koosau , Jeffrey Dietz , Declan Scanlan , Subhash Deshmukh , John Holland , Alexander Paterson
发明人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly McDonough , Jivko Dinev , Farid Abooameri , David Gutierrez , Jim He , Robert Clark , Dennis Koosau , Jeffrey Dietz , Declan Scanlan , Subhash Deshmukh , John Holland , Alexander Paterson
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01J37/3266 , H01J37/3244 , H01J37/32706 , H01J2237/3347
摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

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