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1. 发明授权

US07290336B2 Method of fabricating an array of multi-electroded piezoelectric transducers for piezoelectric diaphragm structures 失效
标题翻译：制造用于压电隔膜结构的多电极压电换能器阵列的方法
公开(公告)号：US07290336B2
公开(公告)日：2007-11-06
申请号：US11104887
申请日：2005-04-13
申请人： Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
发明人： Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
IPC分类号： B21D53/76 , B41J2/045 , G01D15/00
CPC分类号： B41J2/14233 , B41J2/14282 , B41J2/161 , B41J2/1614 , B41J2/1632 , H01L41/0973 , H01L41/257 , H01L41/313 , H01L41/314 , H01L41/331 , Y10T29/42 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , Y10T29/4921 , Y10T29/49401
摘要： A circuit provides energy to a plurality of piezoelectric diaphragm structures formed in a two-dimensional array. Each piezoelectric diaphragm structure includes a piezoelectric element in operational contact with at least a first side electrode and a second side electrode. A switching system includes a first connection for a first power source, for application of power to the first side electrode and a second connection for a second power source, for application of power to the second side electrode. In a first state, power appropriate for performing a poling operation of the piezoelectric material is available for application to the first electrode, and the second electrode, and in a second state, power appropriate to activate the piezoelectric material to cause operational movement of the poled piezoelectric diaphragm structure is available for application to the first electrode and the second electrode.
摘要翻译：电路向以二维阵列形成的多个压电振膜结构提供能量。每个压电膜结构包括与至少第一侧电极和第二侧电极操作接触的压电元件。交换系统包括用于第一电源的第一连接，用于向第一侧电极施加电力和用于第二电源的第二连接，用于向第二侧电极施加电力。在第一状态下，适于执行压电材料的极化操作的电力可用于施加到第一电极和第二电极，并且在第二状态下，适于激活压电材料的动力引起极化的操作运动压电膜结构可应用于第一电极和第二电极。

2. 发明授权

US07176600B2 Poling system for piezoelectric diaphragm structures 有权
标题翻译：用于压电隔膜结构的极化系统
公开(公告)号：US07176600B2
公开(公告)日：2007-02-13
申请号：US10739243
申请日：2003-12-18
申请人： Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
发明人： Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
IPC分类号： H01L41/08
CPC分类号： B41J2/14233 , B41J2/14282 , B41J2/161 , B41J2/1614 , B41J2/1632 , H01L41/0973 , H01L41/257 , H01L41/313 , H01L41/314 , H01L41/331 , Y10T29/42 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , Y10T29/4921 , Y10T29/49401
摘要： A circuit provides energy to a plurality of piezoelectric diaphragm structures formed in a two-dimensional array. Each piezoelectric diaphragm structure includes a piezoelectric element in operational contact with at least a first side electrode and a second side electrode. A switching system includes a first connection for a first power source, for application of power to the first side electrode and a second connection for a second power source, for application of power to the second side electrode. In a first state, power appropriate for performing a poling operation of the piezoelectric material is available for application to the first electrode, and the second electrode, and in a second state, power appropriate to activate the piezoelectric material to cause operational movement of the poled piezoelectric diaphragm structure is available for application to the first electrode and the second electrode.
摘要翻译：电路向以二维阵列形成的多个压电振膜结构提供能量。每个压电膜结构包括与至少第一侧电极和第二侧电极操作接触的压电元件。交换系统包括用于第一电源的第一连接，用于向第一侧电极施加电力和用于第二电源的第二连接，用于向第二侧电极施加电力。在第一状态下，适于执行压电材料的极化操作的电力可用于施加到第一电极和第二电极，并且在第二状态下，适于激活压电材料的动力引起极化的操作运动压电膜结构可应用于第一电极和第二电极。

3. 发明授权

US07053532B2 Radially poled piezoelectric diaphragm structures 有权
标题翻译：径向极化压电隔膜结构
公开(公告)号：US07053532B2
公开(公告)日：2006-05-30
申请号：US10740292
申请日：2003-12-18
申请人： Meng H. Lean , Steven A. Buhler , John S. Fitch , Karl A. Littau
发明人： Meng H. Lean , Steven A. Buhler , John S. Fitch , Karl A. Littau
IPC分类号： H01L41/08
CPC分类号： H01L41/0973 , H01L41/047
摘要： In accordance with one embodiment of the present application, a piezoelectric diaphragm structure includes a diaphragm, with a piezoelectric material located on the diaphragm. The piezoelectric material is being poled in a radial direction to the piezoelectric material, wherein the poling direction is in-plane with the piezoelectric material. An inter-digitated electrode grid is positioned on a first surface of the piezoelectric material, the inter-digitated electrode grid including a plurality of electrodes configured to selectively receive positive and negative voltage. The application of the positive and negative voltages generate electric fields in the piezoelectric material, at least a portion of which are in-plane with the piezoelectric material, resulting in an actuation of the piezoelectric material, causing a length change of the piezoelectric material in the Radial direction.In accordance with another embodiment of the present application, provided is a method of actuating a piezoelectric diaphragm structure, including poling a piezoelectric material in a radial direction of the piezoelectric material, wherein the poling direction is in-plane with the piezoelectric material. The piezoelectric material is located in operative contact with the diaphragm, and an electrode arrangement located on a surface of the piezoelectric material is selectively supplied with voltages generating electric fields. The generated electric fields are at least partially in the same plane as the poling direction, resulting in a d33 mode of actuation of the piezoelectric material, causing a length change of the piezoelectric material in the Radial direction.
摘要翻译：根据本申请的一个实施例，压电振膜结构包括隔膜，压电材料位于隔膜上。压电材料在压电材料的径向方向上被极化，其中极化方向与压电材料成平面。数字化电极栅格位于压电材料的第一表面上，数字化电极栅格包括多个电极，其被配置为选择性地接收正电压和负电压。正压和负电压的施加在压电材料中产生电场，其压电材料的至少一部分与压电材料成平面，导致压电材料的致动，导致压电材料的长度变化径向。根据本申请的另一实施例，提供了一种致动压电膜结构的方法，包括在压电材料的径向方向上极化压电材料，其中极化方向与压电材料成平面。压电材料位于与隔膜有效接触的位置，并且位于压电材料表面上的电极装置被选择性地供给产生电场的电压。产生的电场至少部分地在与极化方向相同的平面中，导致压电材料的致动模式，导致压电材料在径向方向上的长度变化。

4. 发明授权

US07084555B2 Piezoelectric diaphragm structure with outer edge electrode 失效
标题翻译：压电膜片结构，外缘电极
公开(公告)号：US07084555B2
公开(公告)日：2006-08-01
申请号：US10739478
申请日：2003-12-18
申请人： John R. Bachellerie , Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
发明人： John R. Bachellerie , Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
IPC分类号： H01L41/08
CPC分类号： H01L41/0973 , H01L41/047
摘要： A multi-electrode piezoelectric diaphragm structure includes a diaphragm, piezoelectric material located on the diaphragm, which is defined as having a first area, and a second area. The first area of the piezoelectric is poled in a first direction, and the second area of the piezoelectric is poled in a second direction. The poled first direction is in a Z-axis of the piezoelectric and the poled second direction is in a Radial axis of the piezoelectric. A first electrode is positioned in the first area, on the first surface, of the piezoelectric. A second electrode is positioned in the second area, on the first surface, of the piezoelectric. A third electrode is located on a second surface of the piezoelectric. The application of voltages to the first, second and third electrodes generates electric fields in the piezoelectric material resulting in actuation of the piezoelectric material, or the application of pressure or strain to the diaphragm generates electric potentials at the first, second and third electrodes.
摘要翻译：多电极压电膜结构包括隔膜，位于膜片上的压电材料，其被定义为具有第一区域，第二区域。压电体的第一区域沿第一方向极化，并且压电体的第二区域在第二方向上极化。极化的第一方向在压电体的Z轴上，并且极化的第二方向处于压电体的径向轴线。第一电极位于压电体的第一表面的第一区域中。第二电极位于压电体的第一表面的第二区域中。第三电极位于压电体的第二表面上。施加电压到第一，第二和第三电极在压电材料中产生电场，导致压电材料的致动，或施加压力或应变到隔膜在第一，第二和第三电极处产生电位。

5. 发明授权

US06924584B2 Piezoelectric transducers utilizing sub-diaphragms 失效
标题翻译：压电换能器采用副膜片
公开(公告)号：US06924584B2
公开(公告)日：2005-08-02
申请号：US10319138
申请日：2002-12-13
申请人： Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
发明人： Steven A. Buhler , John S. Fitch , Meng H. Lean , Karl A. Littau
IPC分类号： H01L41/09 , H01L41/113 , H01L41/04
CPC分类号： H01L41/0973 , H01L41/1132
摘要： A system and method of operation is described which utilizes an array of piezoelectric actuators distributed over the surface of a diaphragm. In one embodiment, the piezoelectric actuator array is used to cause a net motion of the diaphragm equal to the sum of the motions of each individual sub-chamber diaphragm. The system can be used as a sensor where a common motion applied to the sub-chamber diaphragm causes a net charge equal to the sum of the charges on each piezoelectric diaphragm.
摘要翻译：描述了一种使用分布在隔膜表面上的压电致动器阵列的系统和操作方法。在一个实施例中，压电致动器阵列用于使隔膜的净运动等于每个单独的子室隔膜的运动的总和。该系统可以用作传感器，其中施加到子室隔膜的共同运动导致等于每个压电振膜上的电荷之和的净电荷。

6. 发明授权

US07234214B2 Methods for making thick film elements 有权
标题翻译：制作厚膜元件的方法
公开(公告)号：US07234214B2
公开(公告)日：2007-06-26
申请号：US11084579
申请日：2005-03-18
申请人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
发明人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
IPC分类号： H04R17/00
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 μm to 100 μm. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.
摘要翻译：一种生产至少一个厚膜元件的方法，包括在至少一个第一基底的表面上沉积材料以形成至少一个厚度大约在10至100μm的厚膜元件结构。然后，将至少一个厚膜元件结构接合到第二基板，并且使用采用辐射能的剥离工艺将至少一个第一基板从至少一个厚膜元件结构移除。剥离过程包括从辐射源将辐射束从第一衬底发射到在第一衬底的第一表面处形成在第一衬底和至少一个厚膜元件结构之间的附接界面。第一衬底在辐射束的波长处基本上是透明的，允许辐射束在界面处产生足够的能量以破坏附件。

7. 发明授权

US07091650B2 Piezoelectric ceramic thick film element, array of elements, and devices 有权
标题翻译：压电陶瓷厚膜元件，元件阵列和器件
公开(公告)号：US07091650B2
公开(公告)日：2006-08-15
申请号：US11017494
申请日：2004-12-20
申请人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
发明人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
IPC分类号： H01L41/08
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A piezoelectric thick film element array includes at least one piezoelectric element structure having a thickness between 10 μm to 100 μm formed by a deposition process. The at least one piezoelectric element is patterned during the deposition process, and includes a first electrode deposited on a first surface of the piezoelectric elements structure, and a second electrode deposited on a second surface of the piezoelectric element structure. In a further embodiment, several devices are provided using a piezoelectric element or an array having a piezoelectric element structure with a thickness of between 10 μm to 100 μm formed by a deposition process. These devices include microfluidic ejectors, transducer arrays and catheters.
摘要翻译：压电厚膜元件阵列包括通过沉积工艺形成的至少一个压电元件结构，其厚度在10um至100μm之间。所述至少一个压电元件在所述沉积工艺期间被图案化，并且包括沉积在所述压电元件结构的第一表面上的第一电极和沉积在所述压电元件结构的第二表面上的第二电极。在另一实施例中，使用压电元件或具有通过沉积工艺形成的厚度在10um至100μm之间的压电元件结构的阵列来提供若干器件。这些装置包括微流体喷射器，换能器阵列和导管。

8. 发明申请

US20090113685A1 Methods to make piezoelectric ceramic thick film array and single elements and devices 失效
标题翻译：制造压电陶瓷厚膜阵列和单元件和器件的方法
公开(公告)号：US20090113685A1
公开(公告)日：2009-05-07
申请号：US11363849
申请日：2006-02-28
申请人： Baomin Xu , Steven A. Buhler , Michael C. Welsberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
发明人： Baomin Xu , Steven A. Buhler , Michael C. Welsberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
IPC分类号： H04R17/00
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.In another embodiment, a material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 μm to 100 μm. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.
摘要翻译：制造至少一个压电元件的方法包括将压电陶瓷材料沉积到第一基板的表面上以形成至少一个压电元件结构。然后在至少一个压电元件结构的表面上沉积电极。接下来，将至少一个压电元件结构接合到第二基板，第二基板是导电的或具有导电层。然后从至少一个压电元件结构去除第一衬底，并且第二侧电极沉积在至少一个压电元件结构的第二表面上。执行极化操作以向至少一个压电元件结构提供压电特性。在另一个实施例中，用于厚膜元件的材料沉积到第一基底的表面上以形成厚度大于10um至100μm的厚膜元件结构。所述至少一个厚膜元件结构被结合到第二基板。此后，使用包括从辐射源（例如激光或其它合适的装置）发射通过第一基板的光束到形成的附接接口的剥离过程，从至少一个厚膜元件结构中去除第一基板，在第一基板和第一基板的表面处的至少一个厚膜元件结构之间。第一衬底在光束的波长处基本上是透明的，并且光束在界面处产生足够的能量以破坏附件。

9. 发明授权

US06967431B2 Piezoelectric transducers and methods of manufacture 失效
标题翻译：压电换能器和制造方法
公开(公告)号：US06967431B2
公开(公告)日：2005-11-22
申请号：US10664352
申请日：2003-09-16
申请人： Steven A. Buhler , Karl A. Littau , John S. Fitch
发明人： Steven A. Buhler , Karl A. Littau , John S. Fitch
IPC分类号： B41J2/14 , H01L41/09 , H01L41/22 , H01L41/08
CPC分类号： B41J2/14233 , H01L41/0973 , H01L41/313
摘要： A system and method of operation for a piezoelectric transducer is described which utilizes a mesa structure interposed between a piezoelectric material element and a chamber diaphragm. The mesa structure may further comprise a series of mesa openings at least partially filled with adhesive and mesa grooves. The system can be used as a sensor where a net motion to the diaphragm causes a net charge equal to the sum of the charges on each piezoelectric diaphragm. Alternatively, the system can be used as an actuator wherein an applied voltage causes movement of the piezoelectric transducer and the chamber diaphragm.
摘要翻译：描述了一种用于压电传感器的系统和操作方法，其利用介于压电材料元件和室隔膜之间的台面结构。台面结构还可以包括至少部分地填充有粘合剂和台面凹槽的一系列台面开口。该系统可用作传感器，其中对隔膜的净运动导致与每个压电隔膜上的电荷之和相等的净电荷。或者，该系统可以用作致动器，其中施加的电压引起压电换能器和室隔膜的移动。

10. 发明授权

US07574787B2 Methods to make piezoelectric ceramic thick film array and single elements with a reusable single layer substrate structure 失效
标题翻译：制造压电陶瓷厚膜阵列和单一元件的方法，具有可重复使用的单层基板结构
公开(公告)号：US07574787B2
公开(公告)日：2009-08-18
申请号：US11363849
申请日：2006-02-28
申请人： Baomin Xu , Steven A. Buhler , Michael C. Welsberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
发明人： Baomin Xu , Steven A. Buhler , Michael C. Welsberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
IPC分类号： H04R17/00
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.
摘要翻译：制造至少一个压电元件的方法包括将压电陶瓷材料沉积到第一基板的表面上以形成至少一个压电元件结构。然后在至少一个压电元件结构的表面上沉积电极。接下来，将至少一个压电元件结构接合到第二基板，第二基板是导电的或具有导电层。然后从至少一个压电元件结构去除第一衬底，并且第二侧电极沉积在至少一个压电元件结构的第二表面上。执行极化操作以向至少一个压电元件结构提供压电特性。

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