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1. 发明申请

US20060017138A1 Strain enhanced ultra shallow junction formation 有权
标题翻译：应变增强超浅结结形成
公开(公告)号：US20060017138A1
公开(公告)日：2006-01-26
申请号：US10889915
申请日：2004-07-13
申请人： Steve Ting
发明人： Steve Ting
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , B82Y10/00 , H01L21/2236 , H01L21/324 , H01L21/7624 , H01L29/4983 , H01L29/66575 , H01L29/66772 , H01L29/7843
摘要： Provided is a method of manufacturing a microelectronic device. In one example where the device includes a semiconductor substrate with a gate feature and a shallow junction, the method includes introducing dopants to the substrate to form a source region and a drain region. A strained layer may be formed over the substrate after introducing the dopants, and an annealing process may be performed after forming the strained layer.
摘要翻译：提供一种制造微电子器件的方法。在该器件包括具有栅极特征和浅结的半导体衬底的一个示例中，该方法包括将掺杂剂引入衬底以形成源极区和漏极区。在引入掺杂剂之后，可以在衬底上形成应变层，并且可以在形成应变层之后进行退火处理。

2. 发明授权

US08698163B2 P-type doping layers for use with light emitting devices 有权
标题翻译：用于发光器件的P型掺杂层
公开(公告)号：US08698163B2
公开(公告)日：2014-04-15
申请号：US13248821
申请日：2011-09-29
申请人： Steve Ting
发明人： Steve Ting
IPC分类号： H01L33/30
CPC分类号： H01L33/12 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02579 , H01L21/02584 , H01L21/0262 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24 , H01L33/32 , H01L33/325
摘要： A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.
摘要翻译：发光二极管（LED）包括n型III-V族半导体层，与n型III-V族半导体层相邻的有源层和与活性物质相邻的p型III-V族半导体层层。活性层包括一个或多个V型凹坑。 p型III-V族半导体层的一部分在V型凹坑中。在形成p型III-V族层期间提供的p型掺杂剂注入层有助于提供V型凹坑中p型掺杂剂的预定浓度，分布和/或均匀性。

3. 发明申请

US20130082273A1 P-TYPE DOPING LAYERS FOR USE WITH LIGHT EMITTING DEVICES 有权
公开(公告)号：US20130082273A1
公开(公告)日：2013-04-04
申请号：US13248821
申请日：2011-09-29
申请人： Steve Ting
发明人： Steve Ting
IPC分类号： H01L33/30 , H01L33/22
CPC分类号： H01L33/12 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02579 , H01L21/02584 , H01L21/0262 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24 , H01L33/32 , H01L33/325
摘要： A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

4. 发明申请

US20050247983A1 Method of forming a raised source/drain and a semiconductor device employing the same 有权
标题翻译：形成隆起的源极/漏极的方法和使用其的半导体器件
公开(公告)号：US20050247983A1
公开(公告)日：2005-11-10
申请号：US10839197
申请日：2004-05-05
申请人： Steve Ting
发明人： Steve Ting
IPC分类号： H01L21/336 , H01L29/04 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062
CPC分类号： H01L29/6659 , H01L29/045 , H01L29/665 , H01L29/66628 , H01L29/7834 , Y10S257/90
摘要： A method of forming a raised source/drain proximate a spacer of a gate of a transistor on a substrate, and a semiconductor device of an integrated circuit employing the same. In one embodiment, the method includes orienting the gate substantially along a direction of the substrate. The method also includes providing a semiconductor material adjacent the spacer of the gate to form a raised source/drain layer of the raised source/drain oriented substantially along a direction of the substrate.
摘要翻译：在基板上的晶体管的栅极的间隔物附近形成凸起的源极/漏极的方法，以及采用该源极的集成电路的半导体器件。在一个实施例中，该方法包括基本沿着衬底的<100>方向定向栅极。该方法还包括提供与栅极的间隔物相邻的半导体材料，以形成基本上沿着衬底的<100>方向取向的凸起源极/漏极的凸起源极/漏极层。

5. 发明申请

US20050247976A1 Notched spacer for CMOS transistors 审中-公开
标题翻译：用于CMOS晶体管的缺口间隔物
公开(公告)号：US20050247976A1
公开(公告)日：2005-11-10
申请号：US10840125
申请日：2004-05-06
申请人： Steve Ting , Chih-Hao Wang
发明人： Steve Ting , Chih-Hao Wang
IPC分类号： H01L21/265 , H01L21/336 , H01L29/76
CPC分类号： H01L29/6653 , H01L21/26586 , H01L29/6656 , H01L29/6659
摘要： A notched spacer for CMOS transistors and a method of manufacture is provided. A gate electrode is formed on a substrate. A first ion implant mask is formed alongside the gate electrode such that the first ion implant mask is at least partially removed along the surface of the substrate. A first ion implant is performed at an oblique angle to the surface of the substrate to implant impurities of a first conductivity type in the substrate beneath at least a portion of the gate electrode. A second ion implant is performed at an angle normal to the surface of the substrate to implant impurities of a second conductivity type to form source/drain extensions of the CMOS transistors. Additional spacers and ion implants may be performed to fabricate graded source/drain regions.
摘要翻译：提供了用于CMOS晶体管的缺口间隔物和制造方法。在基板上形成栅电极。沿着栅电极形成第一离子注入掩模，使得第一离子注入掩模至少部分地沿着衬底的表面去除。以与衬底表面倾斜的角度执行第一离子注入，以在栅极电极的至少一部分下方的衬底中注入第一导电类型的杂质。以垂直于衬底表面的角度执行第二离子注入，以注入第二导电类型的杂质以形成CMOS晶体管的源极/漏极扩展。可以执行附加的间隔物和离子植入物以制造分级的源极/漏极区域。

6. 发明授权

US08853668B2 Light emitting regions for use with light emitting devices 有权
标题翻译：用于发光装置的发光区域
公开(公告)号：US08853668B2
公开(公告)日：2014-10-07
申请号：US13249146
申请日：2011-09-29
申请人： Jeff Ramer , Steve Ting
发明人： Jeff Ramer , Steve Ting
IPC分类号： H01L33/32 , H01L33/40
CPC分类号： H01L33/007 , H01L33/06 , H01L33/22 , H01L33/32
摘要： A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm2 and 30 V-pits/μm2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.
摘要翻译：发光器件包括具有n型III-V族半导体的第一层，与第一层相邻的第二层，第二层包括在电子和空穴复合时产生光的活性材料。在一些情况下，活性材料具有一个或多个密度在约1V-pit /μm2和30V-pits /μm2之间的V型凹坑。发光器件包括与第二层相邻的第三层，第三层包括p型III-V族半导体。

7. 发明申请

US20130082236A1 LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES 有权
公开(公告)号：US20130082236A1
公开(公告)日：2013-04-04
申请号：US13249146
申请日：2011-09-29
申请人： Jeff Ramer , Steve Ting
发明人： Jeff Ramer , Steve Ting
IPC分类号： H01L33/32 , H01L33/40 , B82Y99/00
CPC分类号： H01L33/007 , H01L33/06 , H01L33/22 , H01L33/32
摘要： A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm2 and 30 V-pits/μm2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.

8. 发明申请

US20120070916A1 MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS 审中-公开
标题翻译：可旋转注射器旋转盘式反应器
公开(公告)号：US20120070916A1
公开(公告)日：2012-03-22
申请号：US13307239
申请日：2011-11-30
申请人： Piero Sferlazzo , Alexander I. Gurary , Eric A. Armour , William E. Quinn , Steve Ting
发明人： Piero Sferlazzo , Alexander I. Gurary , Eric A. Armour , William E. Quinn , Steve Ting
IPC分类号： H01L21/66
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译：提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于旋转轴线并沿着旋转轴向上游方向。在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动。

9. 发明授权

US08092599B2 Movable injectors in rotating disc gas reactors 失效
标题翻译：可旋转注射器在旋转盘式气体反应器
公开(公告)号：US08092599B2
公开(公告)日：2012-01-10
申请号：US11827133
申请日：2007-07-10
申请人： Piero Sferlazzo , Alexander I. Gurary , Eric A. Armour , William E. Quinn , Steve Ting
发明人： Piero Sferlazzo , Alexander I. Gurary , Eric A. Armour , William E. Quinn , Steve Ting
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译：提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于旋转轴线并沿着旋转轴向上游方向。在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动。

10. 发明申请

US20090017190A1 Movable injectors in rotating disc gas reactors 失效
标题翻译：可旋转注射器在旋转盘式气体反应器
公开(公告)号：US20090017190A1
公开(公告)日：2009-01-15
申请号：US11827133
申请日：2007-07-10
申请人： Piero Sferlazzo , Alexander I. Gurary , Eric A. Armour , William E. Quinn , Steve Ting
发明人： Piero Sferlazzo , Alexander I. Gurary , Eric A. Armour , William E. Quinn , Steve Ting
IPC分类号： C23C16/00
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译：提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于旋转轴线并沿着旋转轴向上游方向。在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动。

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