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1. 发明申请

US20090052100A1 METHOD OF FORMING AN ESD DETECTOR AND STRUCTURE THEREFOR 有权
标题翻译：形成ESD检测器及其结构的方法
公开(公告)号：US20090052100A1
公开(公告)日：2009-02-26
申请号：US11843822
申请日：2007-08-23
申请人： Stephen Paul Robb , David M. Heminger , Alejandro Lara-Ascorra
发明人： Stephen Paul Robb , David M. Heminger , Alejandro Lara-Ascorra
IPC分类号： H02H9/00
CPC分类号： H02H9/04
摘要： In one embodiment, and electro-static discharge detector is formed with a plurality of channels and is configured to detect a positive electro-static discharge and a negative electro-static discharge.
摘要翻译：在一个实施例中，静电放电检测器形成有多个通道，并且被配置为检测正静电放电和负静电放电。

2. 发明授权

US08681458B2 Method of forming an ESD detector and structure therefor 有权
标题翻译：形成ESD检测器及其结构的方法
公开(公告)号：US08681458B2
公开(公告)日：2014-03-25
申请号：US11843822
申请日：2007-08-23
申请人： Stephen Paul Robb , David M. Heminger , Alejandro Lara-Ascorra
发明人： Stephen Paul Robb , David M. Heminger , Alejandro Lara-Ascorra
IPC分类号： H02H9/00
CPC分类号： H02H9/04
摘要： In one embodiment, and electro-static discharge detector is formed with a plurality of channels and is configured to detect a positive electro-static discharge and a negative electro-static discharge.
摘要翻译：在一个实施例中，静电放电检测器形成有多个通道，并且被配置为检测正静电放电和负静电放电。

3. 发明授权

US07102199B2 Low voltage transient voltage suppressor and method of making 有权
标题翻译：低压瞬态电压抑制器及其制造方法
公开(公告)号：US07102199B2
公开(公告)日：2006-09-05
申请号：US10406106
申请日：2003-04-04
申请人： Francine Y. Robb , Jeffrey Pearse , David M. Heminger , Stephen P. Robb
发明人： Francine Y. Robb , Jeffrey Pearse , David M. Heminger , Stephen P. Robb
IPC分类号： H01L23/62
CPC分类号： H01L29/7816 , H01L27/0623 , H01L29/1087 , H01L29/41741 , H01L29/7801 , H01L29/7802 , H01L29/7813 , H01L29/7818 , H01L29/861
摘要： A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device (72) provides an enhanced gain operation, while device (88) provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.
摘要翻译：使用金属氧化物半导体（MOS）结构和绝缘栅双极晶体管（IGBT）结构来描述提供瞬态电压抑制（TVS）器件的方法。基于MOS的TVS器件提供减少的漏电流，钳位电压在0.5和5伏之间。基于沟槽MOS的TVS设备（72）提供增强的增益操作，而设备（88）提供顶侧漏极接触。基于高增益MOS的TVS器件可以提高对钳位电压变化的控制。

4. 发明授权

US5198701A Current source with adjustable temperature variation 失效
标题翻译：具有可调节温度变化的电流源
公开(公告)号：US5198701A
公开(公告)日：1993-03-30
申请号：US632793
申请日：1990-12-24
申请人： Robert B. Davies , Lloyd H. Hayes , David M. Heminger , David F. Mietus
发明人： Robert B. Davies , Lloyd H. Hayes , David M. Heminger , David F. Mietus
IPC分类号： G05F3/26 , G05F1/46 , G05F3/22 , H01L33/00
CPC分类号： G05F1/463 , G05F3/225
摘要： A current source with adjustable temperature compensation in which the level of current supplied to a load is adjusted to compensate for the load's inherent change in performance with changes in temperature. The current source allows selection of the appropriate temperature compensating characteristic and operating current solely by altering internal component values.

5. 发明授权

US4961097A High frequency photo detector and method for the manufacture thereof 失效
标题翻译：高频光电探测器及其制造方法
公开(公告)号：US4961097A
公开(公告)日：1990-10-02
申请号：US710781
申请日：1985-03-11
申请人： Hassan Pirastehfar , George C. Onodera , Waisiu Law , David M. Heminger
发明人： Hassan Pirastehfar , George C. Onodera , Waisiu Law , David M. Heminger
IPC分类号： H01L27/14 , H01L21/762 , H01L31/0352 , H01L31/10 , H01L31/103 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/76297 , H01L31/03529 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： An improved photo detector is provided by forming a tub of monocrystalline semiconductor material surrounded by a layer of monocrystalline material of opposite conductivity type. The improved structure is manufactured by means of a modified DIC process. The device may by made deep enough to absorb a large portion of the incident radiation near the PN junction without sacrificing a large number of photo-generated carriers to recombination.
摘要翻译：通过形成由相反导电类型的单晶材料层包围的单晶半导体材料桶来提供改进的光电检测器。改进的结构通过改进的DIC工艺制造。该器件可以通过制造得足够深以吸收PN结附近的大部分入射辐射而不牺牲大量光生载流子进行复合。

6. 发明授权

US07579818B2 Current regulator and method therefor 有权
标题翻译：电流调节器及其方法
公开(公告)号：US07579818B2
公开(公告)日：2009-08-25
申请号：US11190226
申请日：2005-07-28
申请人： Alan R. Ball , David M. Heminger
发明人： Alan R. Ball , David M. Heminger
IPC分类号： G05F1/00 , G01R29/02
CPC分类号： H02M3/156 , H02M2003/1555
摘要： In one embodiment, a current regulator is configured to form a first signal representative of a current flow through a power switch and to use the first signal to determine an off-time of the power switch.
摘要翻译：在一个实施例中，电流调节器被配置为形成表示通过功率开关的电流的第一信号，并且使用第一信号来确定电源开关的关闭时间。

7. 发明授权

US07030447B2 Low voltage transient voltage suppressor 有权
标题翻译：低压瞬变电压抑制器
公开(公告)号：US07030447B2
公开(公告)日：2006-04-18
申请号：US10620259
申请日：2003-07-15
申请人： Francine Y. Robb , Jeffrey Pearse , David M. Heminger , Stephen P. Robb
发明人： Francine Y. Robb , Jeffrey Pearse , David M. Heminger , Stephen P. Robb
IPC分类号： H01L23/62
CPC分类号： H01L29/7816 , H01L24/05 , H01L27/0623 , H01L29/41741 , H01L29/7801 , H01L29/7802 , H01L29/7813 , H01L2224/04042 , H01L2224/48091 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device (72) provides an enhanced gain operation, while device (88) provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.
摘要翻译：使用金属氧化物半导体（MOS）结构和绝缘栅双极晶体管（IGBT）结构来描述提供瞬态电压抑制（TVS）器件的方法。基于MOS的TVS器件提供减少的漏电流，钳位电压在0.5和5伏之间。基于沟槽MOS的TVS设备（72）提供增强的增益操作，而设备（88）提供顶侧漏极接触。基于高增益MOS的TVS器件可以提高对钳位电压变化的控制。

8. 发明授权

US06633063B2 Low voltage transient voltage suppressor and method of making 有权
标题翻译：低压瞬态电压抑制器及其制造方法
公开(公告)号：US06633063B2
公开(公告)日：2003-10-14
申请号：US09849720
申请日：2001-05-04
申请人： Francine Y. Robb , Jeffrey Pearse , David M. Heminger , Stephen P. Robb
发明人： Francine Y. Robb , Jeffrey Pearse , David M. Heminger , Stephen P. Robb
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L27/0623 , H01L29/1087 , H01L29/41741 , H01L29/7801 , H01L29/7802 , H01L29/7813 , H01L29/7818 , H01L29/861
摘要： A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device (72) provides an enhanced gain operation, while device (88) provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.
摘要翻译：使用金属氧化物半导体（MOS）结构和绝缘栅双极晶体管（IGBT）结构来描述提供瞬态电压抑制（TVS）器件的方法。基于MOS的TVS器件提供减少的漏电流，钳位电压在0.5和5伏之间。基于沟槽MOS的TVS器件（ 72 ）提供了增强的增益操作，而器件（ 88 ）提供了顶部漏极联系。基于高增益MOS的TVS器件可以提高对钳位电压变化的控制

9. 发明授权

US5751052A Inductive driver circuit and method therefor 失效
标题翻译：感应驱动电路及其方法
公开(公告)号：US5751052A
公开(公告)日：1998-05-12
申请号：US617722
申请日：1996-04-01
申请人： David M. Heminger , Vincent L. Mirtich , William H. Grant
发明人： David M. Heminger , Vincent L. Mirtich , William H. Grant
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/02 , H01L27/06 , H01L29/732 , H01L29/866 , H03K17/0812 , H03K17/0814 , H01L27/082
CPC分类号： H01L27/0248 , H03K17/08126 , H03K17/08146
摘要： An inductive driver circuit (10) has a driver transistor (11) that is used for driving loads. An input protection device (13) and a voltage suppression device (12) assist in protecting the transistor (11). The circuit (10), including the driver transistor (11) and the input protection device (13), are formed in a common collector region.
摘要翻译：感应驱动电路（10）具有用于驱动负载的驱动晶体管（11）。输入保护装置（13）和电压抑制装置（12）有助于保护晶体管（11）。包括驱动晶体管（11）和输入保护装置（13）的电路（10）形成在共同的集电极区域中。

10. 发明授权

US5629536A High voltage current limiter and method for making 失效
标题翻译：高压限流器及制作方法
公开(公告)号：US5629536A
公开(公告)日：1997-05-13
申请号：US560774
申请日：1995-11-21
申请人： David M. Heminger , Joseph H. Slaughter
发明人： David M. Heminger , Joseph H. Slaughter
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/088 , H01L29/10 , H01L29/739 , H01L29/78 , H03F1/52 , H01L29/41
CPC分类号： H01L29/7395 , H01L29/1095 , H01L29/7802
摘要： A current limiter (15) is formed between a silicon substrate (10) and a source region (17) by a channel implant region (20). The channel implant region (20) is not modulated by a gate structure so the maximum voltage that can flow between the silicon substrate (10) and the source region (17) is determined by the doping profile of the ever-present channel implant region (20). A pinch-off structure (12) is used to form a depletion region which can support a large voltage potential between the silicon substrate (10) and the source region (17). In an alternate embodiment, a bipolar device is formed such that a limited current flow can be directed into a base region (32) which is used to modulate a current flow between silicon substrate (30) and an emitter region (38). Using the current limiters (15, 35) it is possible to form an AC current limiter (50) that will limit the current flow regardless of the polarity of the voltage placed across two terminals (51, 52).
摘要翻译：通过沟道注入区（20）在硅衬底（10）和源极区（17）之间形成限流器（15）。通道注入区域（20）不被栅极结构调制，使得可以在硅衬底（10）和源极区域（17）之间流动的最大电压由永久存在的沟道注入区域（的掺杂分布） 20）。夹断结构（12）用于形成能够支撑硅衬底（10）和源极区（17）之间的大电压电位的耗尽区。在替代实施例中，形成双极器件，使得有限的电流可以被引导到用于调制硅衬底（30）和发射极区域（38）之间的电流的基极区域（32）中。使用电流限制器（15,35），可以形成限制电流的AC限流器（50），而不管跨两个端子（51,52）放置的电压的极性。

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