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1. 发明授权

US4746960A Vertical depletion-mode j-MOSFET 失效
标题翻译：垂直耗尽型j-MOSFET
公开(公告)号：US4746960A
公开(公告)日：1988-05-24
申请号：US77742
申请日：1987-07-27
申请人： Stephen J. Valeri , Bernard A. MacIver , Kailash C. Jain
发明人： Stephen J. Valeri , Bernard A. MacIver , Kailash C. Jain
IPC分类号： H01L29/78 , H01L29/786 , H01L29/80
CPC分类号： H01L29/78612 , H01L29/7827 , H01L29/7838 , H01L29/78642
摘要： A vertical j-MOSFET useful as a power transistor includes a two-dimensional array of square cells in which a small fraction of the cells are replaced by a double-junction sink useful for collecting the minority carriers in the channel regions that normally will accumulate at each interface of the gate electrode and channel region.
摘要翻译：可用作功率晶体管的垂直j-MOSFET包括方形单元的二维阵列，其中一小部分单元被用于收集通常将在栅极电极和沟道区域的每个界面。

2. 发明授权

US4811063A JMOS transistor utilizing polysilicon sinks 失效
标题翻译：使用多晶硅槽的JMOS晶体管
公开(公告)号：US4811063A
公开(公告)日：1989-03-07
申请号：US110453
申请日：1987-10-20
申请人： Stephen J. Valeri , Kailash C. Jain , Bernard A. MacIver
发明人： Stephen J. Valeri , Kailash C. Jain , Bernard A. MacIver
IPC分类号： H01L29/78 , H01L29/80
CPC分类号： H01L29/7827 , H01L29/7838
摘要： JMOS depletion mode transistors include back-to-back junctions in the doped polysilicon layer that serves as the gate. The polysilicon layer includes a first region of the same conductivity type as the channel in contact with the channel, and a second region, of the same conductivity type as the channel and to which the gate potential is applied, spaced apart by a region of the opposite conductivity type that serves as a sink for minority carriers in the channel. Both buried oxide layer and recessed gate JMOS transistors are included.
摘要翻译： JMOS耗尽型晶体管包括用作栅极的掺杂多晶硅层中的背对点结。多晶硅层包括与沟道接触的沟道类型相同的导电类型的第一区域，以及与沟道相同的导电类型的第二区域，栅极电位施加到该第二区域，作为通道中的少数载体的吸收器的相反导电类型。包括埋氧层和凹栅JMOS晶体管。

3. 发明授权

US4786952A High voltage depletion mode MOS power field effect transistor 失效
标题翻译：高电压耗尽型MOS功率场效应晶体管
公开(公告)号：US4786952A
公开(公告)日：1988-11-22
申请号：US888697
申请日：1986-07-24
申请人： Bernard A. MacIver , Kailash C. Jain
发明人： Bernard A. MacIver , Kailash C. Jain
IPC分类号： H01L29/78 , H01L27/10
CPC分类号： H01L29/7838 , H01L29/7827
摘要： A vertical depletion mode power field effect transistor having a greatly increased drain-to-source breakdown voltage. The drain region is formed in the substrate and separated from the channel by a first insulative layer having apertures which allow the passage of electrical currents. The channel, which is formed between the first insulative layer and a second insulative layer parallel to the substrate surface, contains both a source region, formed by implantation of impurities of the same type as are used to form the drain region, and a gate region. In this configuration, the normally high voltage which exists between the gate and drain is imposed over a greater distance than in conventional depletion mode vertical FETs, so that this new configuration produces vertical power FETs having much higher breakdown voltages than do conventional depletion mode vertical FETs. Islands having a conductivity type opposite to that used to form the source region are formed immediately below the second insulative layer and serve to prevent the creation of a charge inversion layer in the channel, where the inversion layer adversely affects the turn off characteristic of the j-MOS power transistor.
摘要翻译：具有大大增加的漏极 - 源极击穿电压的垂直耗尽型功率场效应晶体管。漏极区域形成在衬底中并且通过具有允许电流通过的孔的第一绝缘层与沟道分离。形成在第一绝缘层和平行于衬底表面的第二绝缘层之间的沟道包含通过注入与用于形成漏极区的相同类型的杂质形成的源极区域和栅极区域。在这种配置中，存在于栅极和漏极之间的正常高电压施加在比传统的耗尽型垂直FET中更大的距离上，使得这种新的配置产生具有比传统的耗尽型垂直FET更高的击穿电压的垂直功率FET 。具有与用于形成源极区域的导电类型相反的导电类型的岛形成在第二绝缘层的正下方，并且用于防止在沟道中产生电荷反转层，其中反型层不利地影响j的截止特性 -MOS功率晶体管。

4. 发明授权

US4800170A Process for forming in a silicon oxide layer a portion with vertical side walls 失效
标题翻译：在氧化硅层中形成具有垂直侧壁的部分的工艺
公开(公告)号：US4800170A
公开(公告)日：1989-01-24
申请号：US104091
申请日：1987-10-02
申请人： Kailash C. Jain , Bernard A. MacIver
发明人： Kailash C. Jain , Bernard A. MacIver
IPC分类号： H01L21/033 , H01L21/265 , H01L21/266 , H01L21/311 , H01L21/425 , H01L21/467
CPC分类号： H01L21/033 , H01L21/26533 , H01L21/26586 , H01L21/266 , H01L21/31111
摘要： A process for forming a buried patterned silicon oxide layer in a silicon chip in which the layer is formed by implanting oxygen into the chip through a mask of silicon oxide on the surface of the silicon chip. The silicon oxide mask is formed to have essentially vertical side walls by interposing an irradiation step between a pair of isotropic wet etching steps in its formation.
摘要翻译：一种用于在硅芯片中形成掩埋图案化氧化硅层的工艺，其中通过在硅芯片的表面上通过氧化硅掩模将氧注入到芯片中形成该层。氧化硅掩模通过在其形成中的一对各向同性湿蚀刻步骤之间插入照射步骤而形成为具有基本上垂直的侧壁。

5. 发明授权

US4652334A Method for patterning silicon dioxide with high resolution in three dimensions 失效
标题翻译：三维图案二氧化硅分辨率高的方法
公开(公告)号：US4652334A
公开(公告)日：1987-03-24
申请号：US836900
申请日：1986-03-06
申请人： Kailash C. Jain , Bernard A. MacIver
发明人： Kailash C. Jain , Bernard A. MacIver
IPC分类号： C03C15/00 , C03C23/00 , H01L21/311 , H01L21/3115 , B44C1/22 , C03C25/06
CPC分类号： C03C23/0055 , C03C15/00 , H01L21/31111 , H01L21/31155
摘要： A method is provided for selectively etching ion-implanted silicon dioxide. A masked silicon dioxide layer is exposed to an ion beam of controlled dose and energy. The mask is removed and the silicon dioxide layer is brought in contact with an aqueous ammoniacal hydrogen peroxide solution which preferentially removes the ion-bombarded region with minimal etching of the unimplanted silicon dioxide.
摘要翻译：提供了一种选择性蚀刻离子注入二氧化硅的方法。掩蔽的二氧化硅层暴露于受控剂量和能量的离子束。除去掩模，并且使二氧化硅层与氨过氧化氢水溶液接触，该氨水过氧化氢溶液优先除去未被注入的二氧化硅的蚀刻，从而优先除去离子轰击区域。

6. 发明授权

US08124037B2 Perovskite materials for solid oxide fuel cell cathodes 有权
标题翻译：固体氧化物燃料电池阴极的钙钛矿材料
公开(公告)号：US08124037B2
公开(公告)日：2012-02-28
申请号：US12635756
申请日：2009-12-11
申请人： Kailash C. Jain , Joseph M. Keller , Rick D. Kerr
发明人： Kailash C. Jain , Joseph M. Keller , Rick D. Kerr
IPC分类号： C04B35/00
CPC分类号： C04B35/2641 , C01G49/009 , C01G51/006 , C01G51/68 , C01P2002/34 , C01P2002/72 , C01P2002/77 , C01P2004/51 , C01P2004/61 , C01P2004/62 , C01P2006/12 , C01P2006/40 , C04B35/2633 , C04B35/6261 , C04B35/6262 , C04B35/6264 , C04B35/62655 , C04B35/62675 , C04B2235/3213 , C04B2235/3227 , C04B2235/3272 , C04B2235/3275 , C04B2235/5409 , C04B2235/5445 , C04B2235/79 , H01M4/8621 , H01M4/9033
摘要： An improved LSCF 6428 perovskite material of the type La12zSrx+zCo0.2+aFe0.8+bO3−δ wherein x=0.4, z=(0-0.1), a=(0.01-0.04), and b=(0.05-0.15) for use as an SOFC cathode having increased electronic and ionic conductivity. The general formula is similar to the prior art formulae (La0.6Sr0.4)1−zCo0.2Fe0.8O3−δ and La0.6Sr0.4Co0.2Fe0.8O3−δ but applies the z term to La and Sr independently as well as reducing the overall content of La. Further, by adding a small amount (a) of extra Co ions, catalytic activity, conductivity, and sinterability are further enhanced. Adding small amounts (b) of Fe and/or Fe and Co moderates the thermal expansion coefficient with no adverse effect on crystal structure or fuel cell performance. Improved sinterability, microstructure, and reduced film cracking result in high power density of fuel cells. An inherently low-cost solid state reaction method is described.
摘要翻译： La12zSrx + zCo0.2 + aFe0.8 + bO3-δ类型的改进的LSCF 6428钙钛矿材料，其中x = 0.4，z =（0-0.1），a =（0.01-0.04）和b =（0.05-0.15 ）用作具有增加的电子和离子电导率的SOFC阴极。通式与现有技术公式（La0.6Sr0.4）1-zCo0.2Fe0.8O3-δ和La0.6Sr0.4Co0.2Fe0.8O3-δ类似，但也可以独立地将z项应用于La和Sr 作为降低La的总体含量，另外，通过添加少量（a）的额外的Co离子，催化活性，导电性和烧结性进一步提高。加入少量（b）的Fe和/或Fe和Co会缓和热膨胀系数，对晶体结构或燃料电池性能没有不利影响。改善的烧结性，微观结构和降低的膜裂纹导致燃料电池的高功率密度。描述了固有的低成本固态反应方法。

7. 发明申请

US20100075194A1 Low-temperature bonding of refractory ceramic layers 有权
$Low-temperature bonding of refractory ceramic layers$
标题翻译：难熔陶瓷层的低温结合
公开(公告)号：US20100075194A1
公开(公告)日：2010-03-25
申请号：US12284499
申请日：2008-09-23
申请人： Kailash C. Jain , Rick D. Kerr , Bryan Gillispie , Mohammad Parsian , Joseph M. Keller , David A. Thompson
发明人： Kailash C. Jain , Rick D. Kerr , Bryan Gillispie , Mohammad Parsian , Joseph M. Keller , David A. Thompson
IPC分类号： H01M8/10 , B32B38/00
CPC分类号： H01M4/8657 , H01M4/8889 , H01M4/9016 , H01M4/9033 , H01M8/1253 , H01M2004/8689 , H01M2008/1293 , Y02E60/521 , Y02E60/525 , Y02P70/56
摘要： A cathode of a solid-oxide fuel cell includes a first ionic conducting layer, a second layer deposited over the first layer and formed from a mixed ionic and electronic conductor layer including an oxygen ion conducting phase, and a third layer deposited over the second layer and formed from a mixed ionic and electronic conductor layer. A sintering aid and pore formers are added to the second layer and the third layer to establish ionic, electronic, and gas diffusion paths that are contiguous. By adjusting the microstructure of the second and the third layer, a high performance low resistance cathode is formed that bonds well to the electrolyte, is highly electro-catalytic, and has a relatively low overall resistance. By using inexpensive and readily available substances as sintering aid and as pore formers, a low-cost cathode is provided.
摘要翻译：固体氧化物燃料电池的阴极包括第一离子导电层，沉积在第一层上并由包括氧离子传导相的混合离子和电子导体层形成的第二层，以及沉积在第二层上的第三层并由混合的离子和电子导体层形成。向第二层和第三层加入烧结助剂和成孔剂以建立邻接的离子，电子和气体扩散路径。通过调整第二层和第三层的微结构，形成了与电解质结合良好的高性能低电阻阴极，高电催化，总体电阻较低。通过使用便宜且容易获得的物质作为烧结助剂和成孔剂，提供了低成本的阴极。

8. 发明授权

US06916384B2 Method of treating a gas sensor 失效
标题翻译：处理气体传感器的方法
公开(公告)号：US06916384B2
公开(公告)日：2005-07-12
申请号：US10037900
申请日：2001-10-22
申请人： Kailash C. Jain , Kenneth M. Rahmoeller , Da Yu Wang , Paul Kikuchi , Carlos A. Valdes
发明人： Kailash C. Jain , Kenneth M. Rahmoeller , Da Yu Wang , Paul Kikuchi , Carlos A. Valdes
IPC分类号： G01N27/407 , B08B3/04
CPC分类号： G01N27/4071
摘要： A method of treating a gas sensor comprising: disposing the gas sensor in a basic agent solution comprising a basic agent selected from the group consisting of Group IA of the Periodic Table of Elements, Group IIA of the Periodic Table of Elements, and combinations comprising at least one of the foregoing metals, wherein the gas sensor comprises an electrolyte disposed between and in ionic communication with a first electrode and a second electrode; disposing the gas sensor in an acidic agent solution; wetting at least a portion of a porous protective layer of the gas sensor with an alkaline-carbonate solution; and heating the gas sensor.
摘要翻译：一种处理气体传感器的方法，包括：将所述气体传感器设置在碱性试剂溶液中，所述碱性试剂溶液包含选自元素周期表第IA族，元素周期表IIA族的IA，至少一种上述金属，其中所述气体传感器包括设置在第一电极和第二电极之间且与第一电极和第二电极离子连通的电解质; 将气体传感器置于酸性剂溶液中; 用碱 - 碳酸盐溶液润湿气体传感器的多孔保护层的至少一部分; 并加热气体传感器。

9. 发明授权

US09276267B2 Low-temperature bonding of refractory ceramic layers 有权
$Low-temperature bonding of refractory ceramic layers$
标题翻译：难熔陶瓷层的低温结合
公开(公告)号：US09276267B2
公开(公告)日：2016-03-01
申请号：US12284499
申请日：2008-09-23
申请人： Kailash C. Jain , Rick D. Kerr , Bryan Gillispie , Mohammad Parsian , Joseph M. Keller , David A. Thompson
发明人： Kailash C. Jain , Rick D. Kerr , Bryan Gillispie , Mohammad Parsian , Joseph M. Keller , David A. Thompson
IPC分类号： H01M4/80 , H01M4/86 , H01M4/88 , H01M4/90 , H01M8/12
CPC分类号： H01M4/8657 , H01M4/8889 , H01M4/9016 , H01M4/9033 , H01M8/1253 , H01M2004/8689 , H01M2008/1293 , Y02E60/521 , Y02E60/525 , Y02P70/56
摘要： A cathode of a solid-oxide fuel cell includes a first ionic conducting layer, a second layer deposited over the first layer and formed from a mixed ionic and electronic conductor layer including an oxygen ion conducting phase, and a third layer deposited over the second layer and formed from a mixed ionic and electronic conductor layer. A sintering aid and pore formers are added to the second layer and the third layer to establish ionic, electronic, and gas diffusion paths that are contiguous. By adjusting the microstructure of the second and the third layer, a high performance low resistance cathode is formed that bonds well to the electrolyte, is highly electro-catalytic, and has a relatively low overall resistance. By using inexpensive and readily available substances as sintering aid and as pore formers, a low-cost cathode is provided.
摘要翻译：固体氧化物燃料电池的阴极包括第一离子导电层，沉积在第一层上并由包括氧离子传导相的混合离子和电子导体层形成的第二层，以及沉积在第二层上的第三层并由混合的离子和电子导体层形成。向第二层和第三层加入烧结助剂和成孔剂以建立邻接的离子，电子和气体扩散路径。通过调整第二层和第三层的微结构，形成了与电解质结合良好的高性能低电阻阴极，高电催化，总体电阻较低。通过使用便宜且容易获得的物质作为烧结助剂和成孔剂，提供了低成本的阴极。

10. 发明申请

US20090047569A1 High strength support for solid oxide fuel cell 审中-公开
标题翻译：固体氧化物燃料电池的高强度支撑
公开(公告)号：US20090047569A1
公开(公告)日：2009-02-19
申请号：US11891931
申请日：2007-08-14
申请人： Kailash C. Jain , Mohammed Parsian , Bryan Gillispie , Joseph M. Keller , Rick D. Kerr
发明人： Kailash C. Jain , Mohammed Parsian , Bryan Gillispie , Joseph M. Keller , Rick D. Kerr
IPC分类号： H01M4/00
CPC分类号： H01M8/1253 , H01M4/8657 , H01M4/8885 , H01M8/1226 , Y02E60/525 , Y02P70/56
摘要： An anode for use in an anode-supported planar solid oxide fuel cell (SOFC) is formed from a Ni—YSZ cermet composition that includes a sintering aid selected from the group consisting of an oxide, a carbonate, and mixtures thereof of at least one metal of Group 2 of the Periodic Table.
摘要翻译：用于阳极支撑的平面固体氧化物燃料电池（SOFC）的阳极由Ni-YSZ金属陶瓷组合物形成，所述Ni-YSZ金属陶瓷组合物包括选自氧化物，碳酸盐及其混合物的至少一种元素周期表第2组金属。

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