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1. 发明授权

US5570697A Sensor for analyzing molecular species 失效
标题翻译：用于分析分子种类的传感器
公开(公告)号：US5570697A
公开(公告)日：1996-11-05
申请号：US275456
申请日：1994-07-15
申请人： Stephen D. Walker , Jack L. Jewell , Greg R. Olbright , Stanley E. Swirhun
发明人： Stephen D. Walker , Jack L. Jewell , Greg R. Olbright , Stanley E. Swirhun
IPC分类号： G01J3/44 , A61B5/083 , G01N21/27 , G01N21/39 , G01N33/497 , A62B7/00 , A61B5/00 , A61B5/097
CPC分类号： G01N21/39 , A61B5/0833 , G01N21/031
摘要： An on-airway breath-by-breath oxygen sensor is described which has the necessary low weight, fast response and high precision required for oxygen consumption measurement. A vertical-cavity surface-emitting laser (VCSEL) is continuously tuned to emit light at the resonance of oxygen, or more generally, the molecular species of interest. The light beam is directed through a sample containing the molecular species of interest onto a detector. The amount of light absorbed is approximately proportional to the concentration of the molecular species of interest in the sample.
摘要翻译：描述了一种气道呼吸氧传感器，其具有必要的低重量，快速响应和耗氧量测量所需的高精度。连续调谐垂直腔表面发射激光器（VCSEL）以在氧气或更一般地，感兴趣的分子物质的共振下发光。将光束穿过包含感兴趣的分子物质的样品到检测器上。吸收的光量与样品中感兴趣的分子种类的浓度成正比。

2. 发明授权

US5446754A Phased array semiconductor laser 失效
标题翻译：相控阵半导体激光器
公开(公告)号：US5446754A
公开(公告)日：1995-08-29
申请号：US147564
申请日：1993-11-05
申请人： Jack L. Jewell , Greg R. Olbright
发明人： Jack L. Jewell , Greg R. Olbright
IPC分类号： H01S5/42 , H01S3/05 , H01S3/10 , H01S3/18
CPC分类号： H01S5/423 , H01S2301/18 , H01S5/005 , H01S5/4068
摘要： A phased array of semiconductor laser elements is provided in which the percentage of light which propagates into different diffractive orders is modified by an optical element. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation form a surface of the body, and separate reflecting mirrors at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The optical element may take the form of a modification in the arrangement of the semiconductor laser elements, or an array of microprisms, or an external mirror to modify the percentage of light which propagates into different diffractive orders.
摘要翻译：提供了一种半导体激光元件的相控阵列，其中通过光学元件修改传播到不同衍射级的光的百分比。二极管激光器包括其中具有有源区的半导体材料的主体，其适于产生辐射并且从身体的表面发射辐射，并且在有源区的相对侧分别具有至少一个反射镜对所产生的光部分透明，以允许在有源区域中产生的光通过其发射。光学元件可以采取在半导体激光器元件或微棱镜阵列或外部镜子的布置中的修改的形式，以改变传播到不同衍射级的光的百分比。

3. 发明授权

US5295147A Vertical cavity, surface-emitting laser with expanded cavity 失效
标题翻译：垂直腔，表面发射激光器具有扩展腔
公开(公告)号：US5295147A
公开(公告)日：1994-03-15
申请号：US994976
申请日：1992-12-22
申请人： Jack L. Jewell , Greg R. Olbright
发明人： Jack L. Jewell , Greg R. Olbright
IPC分类号： H01S3/00 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/14 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18358 , H01S2301/166 , H01S5/0422 , H01S5/1039 , H01S5/18341 , H01S5/18369 , H01S5/205 , H01S5/2218
摘要： A vertical-cavity, surface-emitting semiconductor laser having a substrate, an active layer of a semiconductor material which is adapted to generate light on a surface of the substrate, a pair of mirrors at opposite sides of the active layer and means for expanding the diameter of the output beam. Such means include a spacer layer of an optically passive material between the active layer and at least one of the mirrors, and mirror layers of reduced difference in index of refraction, interface layers having intermediate indices of refraction placed between mirror layers, in either case expanding the effective optical cavity length to at least 100 times the thickness of the active material in the active layer. Another means is anti-waveguiding which directly expands the diameter of the beam. The expanded cavity provides an output beam of larger diameter while maintaining stable single mode emission. The spacer layer may be a separate layer or region over the substrate or at least a portion of the substrate.
摘要翻译：具有衬底的垂直腔表面发射半导体激光器，适于在衬底的表面上产生光的半导体材料的有源层，在有源层的相对侧上的一对反射镜和用于扩展输出光束的直径。这种装置包括在活性层和至少一个反射镜之间的光学无源材料的隔离层，以及折射率差异差的镜面层，具有放置在镜层之间的中间折射率的界面层，在任一情况下扩展有效光腔长度至少为有源层中活性材料厚度的100倍。另一种方法是直接扩大梁的直径的抗波导。扩展腔提供较大直径的输出光束，同时保持稳定的单模发射。间隔层可以是衬底上的单独的层或区域或衬底的至少一部分。

4. 发明授权

US5331654A Polarized surface-emitting laser 失效
标题翻译：极化表面发射激光器
公开(公告)号：US5331654A
公开(公告)日：1994-07-19
申请号：US26806
申请日：1993-03-05
申请人： Jack L. Jewell , Greg R. Olbright
发明人： Jack L. Jewell , Greg R. Olbright
IPC分类号： H01S5/028 , H01S5/042 , H01S5/10 , H01S5/183 , H01S5/32 , H01S5/42 , H01S3/10
CPC分类号： H01S5/18355 , H01S5/18338 , H01S5/18341 , H01S5/1835 , H01S5/18361 , H01S5/18386 , H01S5/3201 , H01S5/3202 , H01S5/423
摘要： A vertical-cavity, surface-emitting semiconductor diode laser having a monolithic and planar surface and having lateral anisotropy in order to control the polarization of the emitted beam of light. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation from a surface of the body, and a separate reflecting mirror at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The anisotropy may be provided by utilizing anisotropy in the atomic or molecular structure of the materials forming the laser, or by anisotropic patterning or deliberate offset alignment in processing of the laser or through anisotropic structures in the laser cavity to control the polarization of the emitted beam.
摘要翻译：垂直腔表面发射半导体二极管激光器具有单片和平面表面并具有侧向各向异性以便控制发射光束的偏振。二极管激光器包括半导体材料本体，其中具有有源区，其中适于产生辐射并从该体的表面发射辐射，以及在该有源区的相对侧上具有至少一个反射镜对所产生的光部分透明，以允许在有源区域中产生的光通过其发射。各向异性可以通过利用形成激光的材料的原子或分子结构的各向异性，或通过在激光加工中的各向异性图案或有意偏移对准或通过激光腔中的各向异性结构来控制发射光的偏振来提供。

5. 发明授权

US5523884A Optical beam delivery system 失效
标题翻译：光束传输系统
公开(公告)号：US5523884A
公开(公告)日：1996-06-04
申请号：US194019
申请日：1994-02-09
申请人： Jack L. Jewell , Greg R. Olbright
发明人： Jack L. Jewell , Greg R. Olbright
IPC分类号： G02B5/32 , G02B27/10 , G02B27/30
CPC分类号： G02B27/0905 , G02B27/0961 , G02B27/123 , G02B5/32
摘要： The present invention is directed to an optical system which includes an image region having at least one light source which directs a beam of light along an optical axis and an object region which is adapted to receive the light from the light source. An optical delivery system is between the image region and object region. The optical delivery system receives the light from the image region and directs it to the object region. The optical delivery system is formed of a plurality of optical elements, such as lenses and volume holograms. The optical delivery system is designed to either receive a plurality of beams of light from a plurality of sources or different modes of a single light source and form a single spot of light in the image region having the combined power of all of the beams of light or modes of a single beam. The optical delivery system can also condense or expand the spacing between the beams of light from a plurality of light sources. The optical delivery system is designed so that the Lagrange invariant thereof at the object region is different from the Lagrange invariant thereof at the image region.
摘要翻译：本发明涉及一种光学系统，其包括具有沿着光轴引导光束的至少一个光源和适于接收来自光源的光的物体区域的图像区域。光学传送系统位于图像区域和对象区域之间。光学传送系统接收来自图像区域的光并将其引导到对象区域。光学传送系统由诸如透镜和体积全息图的多个光学元件形成。光学传送系统被设计为从多个源或单个光源的不同模式接收多个光束，并且在具有所有光束的组合功率的图像区域中形成单个光点或单个光束的模式。光学传送系统还可以将来自多个光源的光束之间的间隔缩小或扩大。光学传送系统被设计成使得其在对象区域的拉格朗日不变量与图像区域的拉格朗日不变量不同。

6. 发明授权

US5319496A Optical beam delivery system 失效
标题翻译：光束传输系统
公开(公告)号：US5319496A
公开(公告)日：1994-06-07
申请号：US978391
申请日：1992-11-18
申请人： Jack L. Jewell , Greg R. Olbright
发明人： Jack L. Jewell , Greg R. Olbright
IPC分类号： G02B5/32 , G02B27/10
CPC分类号： G02B27/0905 , G02B27/0961 , G02B27/123 , G02B5/32
摘要： The present invention is directed to an optical system which includes an image region having at least one light source which directs a beam of light along an optical axis and an object region which is adapted to receive the light from the light source. An optical delivery system is between the image region and object region. The optical delivery system receives the light from the image region and directs it to the object region. The optical delivery system is formed of a plurality of optical elements, such as lenses and volume holograms. The optical delivery system is designed to either receive a plurality of beams of light from a plurality of sources or different modes of a single light source and form a single spot of light in the image region having the combined power of all of the beams of light or modes of a single beam. The optical delivery system can also condense or expand the spacing between the beams of light from a plurality of light sources. The optical delivery system is designed so that the Lagrange invariant thereof at the object region is different from the Lagrange invariant thereof at the image region.
摘要翻译：本发明涉及一种光学系统，其包括具有沿着光轴引导光束的至少一个光源和适于接收来自光源的光的物体区域的图像区域。光学传送系统位于图像区域和对象区域之间。光学传送系统接收来自图像区域的光并将其引导到对象区域。光学传送系统由诸如透镜和体积全息图的多个光学元件形成。光学传送系统被设计为从多个源或单个光源的不同模式接收多个光束，并且在具有所有光束的组合功率的图像区域中形成单个光点或单个光束的模式。光学传送系统还可以将来自多个光源的光束之间的间隔缩小或扩大。光学传送系统被设计成使得其在对象区域的拉格朗日不变量与图像区域的拉格朗日不变量不同。

7. 发明授权

US07542493B2 Temperature compensated lasers 有权
标题翻译：温度补偿激光器
公开(公告)号：US07542493B2
公开(公告)日：2009-06-02
申请号：US11046735
申请日：2005-02-01
申请人： Jack L. Jewell
发明人： Jack L. Jewell
IPC分类号： H01S3/00
CPC分类号： H01S5/0612 , H01S5/02461 , H01S5/0284 , H01S5/06804 , H01S5/1221 , H01S5/18311 , H01S5/18322 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/3095
摘要： A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.
摘要翻译：公开了一种用于为半导体激光器提供温度补偿的新颖方法。该方法利用半导体激光器的至少一个反射镜中的反射率特性来向器件提供温度补偿。

8. 发明授权

US5960018A Extended wavelength strained layer lasers having strain compensated layers 失效
标题翻译：具有应变补偿层的扩展波长应变层激光器
公开(公告)号：US5960018A
公开(公告)日：1999-09-28
申请号：US115689
申请日：1998-07-15
申请人： Jack L. Jewell , Henryk Temkin
发明人： Jack L. Jewell , Henryk Temkin
IPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/183 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06 , H01S3/08
CPC分类号： H01S5/34313 , B82Y20/00 , H01L33/06 , H01L33/30 , H01L33/32 , H01S5/18311 , H01S5/2231 , H01S5/3235 , H01S5/34 , H01S5/343 , H01L33/105 , H01S2302/00 , H01S5/0211 , H01S5/1221 , H01S5/18358 , H01S5/2215 , H01S5/3201 , H01S5/3202 , H01S5/3206 , H01S5/32366 , H01S5/32383 , H01S5/3403 , H01S5/3406 , H01S5/342 , H01S5/34306
摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.
摘要翻译：以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3）在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。在某些形式的平面内激光器中也可以使用增益偏移。也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。另外，讨论了利用上述技术的结构。

9. 发明授权

US5897329A Method for producing an electrically conductive element for semiconductor light emitting devices 失效
标题翻译：半导体发光元件用导电元件的制造方法
公开(公告)号：US5897329A
公开(公告)日：1999-04-27
申请号：US964598
申请日：1997-11-05
申请人： Jack L. Jewell
发明人： Jack L. Jewell
IPC分类号： G02B3/00 , H01L33/10 , H01S5/183 , H01S5/20 , H01S5/22 , H04L29/08 , H01L21/20
CPC分类号： H01S5/18355 , G02B3/00 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18341 , H04L67/34 , H01L33/105 , H01S5/0042 , H01S5/18358 , H01S5/18369 , H01S5/18372 , H01S5/2059 , H01S5/2063 , H01S5/2068 , H01S5/2215 , H04L69/329
摘要： A method for producing an electrically conductive element is provided in which an oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation.
摘要翻译：提供一种用于制造导电元件的方法，其中通过改变初始接受氧化的一层或多层形成氧化屏障。

10. 发明授权

US5283447A Integration of transistors with vertical cavity surface emitting lasers 失效
标题翻译：晶体管与垂直腔表面发射激光器的集成
公开(公告)号：US5283447A
公开(公告)日：1994-02-01
申请号：US823496
申请日：1992-01-21
申请人： Gregory R. Olbright , Jack L. Jewell
发明人： Gregory R. Olbright , Jack L. Jewell
IPC分类号： H01S5/00 , H01L27/15 , H01L31/153 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/34 , H01L33/00
CPC分类号： H01S5/18341 , H01L27/15 , H01L31/153 , H01S5/0261 , H01S5/0262 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/3428 , H01S5/423
摘要： Optoelectronic integrated circuits are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) and a transistor. The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible range which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping the regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL with bipolar and FET transistors as well as phototransistors.
摘要翻译：公开了包括垂直腔表面发射激光器（VCSEL）和晶体管的光电集成电路。 VCSEL包括夹在两个分布式布拉格反射器之间的激光腔。激光腔包括一对围绕一个或多个活性的光学发光量子阱层的间隔层，所述有源光发射量子阱层在可见光范围内具有用作器件的有源发光材料的带隙。激光腔的厚度是m（λ）/ 2neff，其中m是整数，（λ）是激光辐射的自由空间波长，neff是空腔的有效折射率。通过将底部反射镜和衬底重掺杂到一种导电类型并以相反的导电类型重掺杂上反射镜的区域来实现激光的电泵浦，以形成二极管结构并向二极管结构施加合适的电压。公开了将VCSEL与双极和FET晶体管以及光电晶体管集成的实施例。

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