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    • 10. 发明申请
    • Gas supply method in a CVD coating system for precursors with a low vapor pressure
    • 用于具有低蒸气压的前体的CVD涂覆系统中的气体供应方法
    • US20050132959A1
    • 2005-06-23
    • US11014488
    • 2004-12-16
    • Hartmut BauchLars BewigLutz KlippeThomas Kupper
    • Hartmut BauchLars BewigLutz KlippeThomas Kupper
    • C23C16/448B01D3/42B05C11/00C23C16/00F25J3/00
    • C23C16/448
    • A gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. The gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. The gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. A first precursor vapor may be mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor is lower than that of the undiluted first precursor vapor at a constant overall pressure in the intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced.
    • 一种气体供应装置,用于将CVD蒸气压低的前体输送到CVD涂层系统。 气体供给装置具有用于前体的供给容器,该供应容器处于第一温度T 1,中间储存装置用于在第二温度T 2和恒定压力p 2下将气态前体中间储存在第一温度T 1之间的第一气体管线 供给容器和中间储存装置以及用于从中间储存装置除去气体的第二气体管线。 气体供给装置以第一温度T 1高于第二温度T 2的方式展开。 中间储存装置的较低温度T 2有助于维护工作,而前体在供应容器中的较高温度T 1下以更大的速率蒸发。 第一前体蒸气可以与中间存储装置中的气体和/或第二前体蒸气混合。 在中间储存装置中,在恒定的总体压力下,第一前体蒸气的分压低于未稀释的第一前体蒸汽的分压,从而可以减少中间储存装置的温度T 2和连续的管线。