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1. 发明授权

US06360605B1 Micromechanical device 有权
标题翻译：微机械装置
公开(公告)号：US06360605B1
公开(公告)日：2002-03-26
申请号：US09608094
申请日：2000-06-30
申请人： Stefan Pinter , Martin Schoefthaler , Matthias Illing , Ralf Schellin , Helmut Baumann , Michael Fehrenbach , Dietrich Schubert , Georg Bischopink
发明人： Stefan Pinter , Martin Schoefthaler , Matthias Illing , Ralf Schellin , Helmut Baumann , Michael Fehrenbach , Dietrich Schubert , Georg Bischopink
IPC分类号： G01P1500
CPC分类号： G01P15/125 , B81B3/0008 , B81B3/0051 , B81B2201/0235 , G01P2015/0814
摘要： A micromechanical device, in particular an acceleration sensor, includes a seismic mass which is resiliently supported on a substrate via a first flexural spring device and which can be deflected in at least one direction by an acceleration, the deflection being able to be limited by a stop device. The stop device has at least one limit stop that is resiliently supported on the substrate via a second flexural spring device, the second flexural spring device having a greater flexural strength than the first flexural spring device.
摘要翻译：微机械装置，特别是加速度传感器，包括经由第一弯曲弹簧装置弹性地支撑在基板上并且可以通过加速度在至少一个方向上偏转的抗震块，所述偏转能够被停止装置止动装置具有至少一个通过第二弯曲弹簧装置弹性地支撑在基底上的止挡件，第二弯曲弹簧装置具有比第一弯曲弹簧装置更大的弯曲强度。

2. 发明授权

US07273764B2 Sensor with at least one micromechanical structure, and method for producing it 有权
标题翻译：具有至少一个微机械结构的传感器及其制造方法
公开(公告)号：US07273764B2
公开(公告)日：2007-09-25
申请号：US11028370
申请日：2005-01-03
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).
摘要翻译：本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个传感器的制造方法设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

3. 发明申请

US20050230708A1 Sensor with at least one micromechanical structure, and method for producing it 有权
标题翻译：具有至少一个微机械结构的传感器及其制造方法
公开(公告)号：US20050230708A1
公开(公告)日：2005-10-20
申请号：US11028370
申请日：2005-01-03
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , C30B1/00
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).
摘要翻译：本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个传感器的制造方法设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

4. 发明授权

US06936902B2 Sensor with at least one micromechanical structure and method for production thereof 有权
标题翻译：具有至少一个微机械结构的传感器及其制造方法
公开(公告)号：US06936902B2
公开(公告)日：2005-08-30
申请号：US10168584
申请日：2000-12-14
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , H01L29/82
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.
摘要翻译：传感器具有基础晶片，其具有传感器室，与基础晶片的传感器室一体化的至少一个硅基微机械结构，在传感器室的区域中覆盖基础晶片的至少一个覆盖物，所述覆盖物包括：第一层，其是沉积层并且可蚀刻介质和反应产物，以及作为密封层并位于第一层上方的密封第二层，作为第一层的沉积层在第一层的区域中是可渗透的传感器室到蚀刻介质和反应产物，用于透过的沉积层具有选自蚀刻开口，多孔区域和两者的结构。

5. 发明授权

US6106735A Wafer stack and method of producing sensors 失效
标题翻译：晶圆堆叠和生产传感器的方法
公开(公告)号：US6106735A
公开(公告)日：2000-08-22
申请号：US5924
申请日：1998-01-12
申请人： Jurgen Kurle , Kurt Weiblen , Stefan Pinter , Horst Muenzel , Helmut Baumann , Dietrich Schubert , Karl Bender , Markus Lutz
发明人： Jurgen Kurle , Kurt Weiblen , Stefan Pinter , Horst Muenzel , Helmut Baumann , Dietrich Schubert , Karl Bender , Markus Lutz
IPC分类号： H01L29/84 , G01L9/00 , H01L21/306
CPC分类号： G01L19/147 , G01L9/0042 , G01L9/0073 , B29C33/0022 , H01L2924/16235
摘要： A wafer stack with sensor elements hermetically sealed in caverns and a method of fabricating the sensors permitting a reduction in the size of the sensors formed after cutting the wafer stack and also yielding considerable savings in chip area in the manufacture of the wafer stack. The wafer stack includes bonding strips arranged between the individual sensor elements. The wafer stack is diced to form individual sensors by sawing in the middle through the bonding strips.
摘要翻译：具有密封在洞穴中的传感器元件的晶片叠层和制造传感器的方法允许在切割晶片叠层之后形成的传感器的尺寸减小，并且还在制造晶片叠层时大大节省了芯片面积。晶片堆叠包括布置在各个传感器元件之间的接合条。通过在中间通过粘合条切割，将晶片堆叠切成单个传感器。

6. 发明授权

US08405210B2 Method for producing a plurality of chips and a chip produced accordingly 有权
标题翻译：用于生产多个芯片的方法和相应地制造的芯片
公开(公告)号：US08405210B2
公开(公告)日：2013-03-26
申请号：US12677068
申请日：2008-07-24
申请人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Ambruster
发明人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Ambruster
IPC分类号： H01L23/498
CPC分类号： H01L21/78 , B81C1/00896 , B81C2201/053
摘要： A production method for chips, in which as many method steps as possible are carried out in the wafer composite, that is, in parallel for a plurality of chips disposed on a wafer. This is a method for producing a plurality of chips whose functionality is implemented on the basis of the surface layer of a substrate. In this method, the surface layer is patterned and at least one cavity is produced below the surface layer, so that the individual chip regions are connected to each other and/or to the rest of the substrate by suspension webs only, and/or so that the individual chip regions are connected to the substrate layer below the cavity via supporting elements in the region of the cavity. The suspension webs and/or supporting elements are cut when the chips are separated. The patterned and undercut surface layer of the substrate is embedded in a plastic mass before the chips are separated.
摘要翻译：一种芯片的制造方法，其中在晶片复合体中进行尽可能多的方法步骤，即对于设置在晶片上的多个芯片并行。这是用于制造多个芯片的方法，其功能是基于基板的表面层来实现的。在该方法中，对表面层进行图案化，并且在表面层下方产生至少一个空腔，使得单独的芯片区域仅通过悬挂网彼此连接和/或连接到基板的其余部分，和/或单个芯片区域通过腔体区域中的支撑元件连接到腔体下方的衬底层。当碎片分离时，悬挂网和/或支撑元件被切割。在芯片分离之前，将衬底的图案和底切表面层嵌入塑料块中。

7. 发明授权

US08389327B2 Method for manufacturing chips 有权
标题翻译：制造芯片的方法
公开(公告)号：US08389327B2
公开(公告)日：2013-03-05
申请号：US12736721
申请日：2008-12-02
申请人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Armbruster
发明人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Armbruster
IPC分类号： H01L21/50
CPC分类号： H01L25/50 , B81C1/0038 , B81C2201/0191 , H01L21/02002 , H01L24/03 , H01L24/05 , H01L2224/05599 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941
摘要： A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the chip (1, 2), the diaphragm (11, 12) is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip (1, 2) in an electroplating process before the chip is separated.
摘要翻译：一种制造芯片（1,2）的方法，其中在跨越空腔（13）的半导体衬底（10）的表面层中产生至少一个隔膜（11,12）。然后将芯片（1,2）的功能集成到隔膜（11,12）中。为了分离芯片（1,2），隔膜（11,12）与基片复合体分离。根据本发明的方法的特征在于在芯片分离之前在电镀工艺中对芯片（1,2）的背面进行金属电镀。

8. 发明申请

US20100283147A1 METHOD FOR PRODUCING A PLURALITY OF CHIPS AND A CHIP PRODUCED ACCORDINGLY 有权
标题翻译：一种生产多汁和方便生产的芯片的方法
公开(公告)号：US20100283147A1
公开(公告)日：2010-11-11
申请号：US12677068
申请日：2008-07-24
申请人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Ambruster
发明人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Ambruster
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： H01L21/78 , B81C1/00896 , B81C2201/053
摘要： A production method for chips, in which as many method steps as possible are carried out in the wafer composite, that is, in parallel for a plurality of chips disposed on a wafer. This is a method for producing a plurality of chips whose functionality is implemented on the basis of the surface layer of a substrate. In this method, the surface layer is patterned and at least one cavity is produced below the surface layer, so that the individual chip regions are connected to each other and/or to the rest of the substrate by suspension webs only, and/or so that the individual chip regions are connected to the substrate layer below the cavity via supporting elements in the region of the cavity. The suspension webs and/or supporting elements are cut when the chips are separated. The patterned and undercut surface layer of the substrate is embedded in a plastic mass before the chips are separated.
摘要翻译：一种芯片的制造方法，其中在晶片复合体中进行尽可能多的方法步骤，即对于设置在晶片上的多个芯片并行。这是用于制造多个芯片的方法，其功能是基于基板的表面层来实现的。在该方法中，对表面层进行图案化，并且在表面层下方产生至少一个空腔，使得单独的芯片区域仅通过悬挂网彼此连接和/或连接到基板的其余部分，和/或单个芯片区域通过腔体区域中的支撑元件连接到腔体下方的衬底层。当芯片分离时，悬挂网和/或支撑元件被切割。在芯片分离之前，将衬底的图案和底切表面层嵌入塑料块中。

9. 发明申请

US20110169107A1 Method for manufacturing a component, method for manufacturing a component system, component, and component system 审中-公开
标题翻译：组件的制造方法，组件系统，部件和部件系统的制造方法
公开(公告)号：US20110169107A1
公开(公告)日：2011-07-14
申请号：US13054435
申请日：2009-06-09
申请人： Torsten Kramer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Armbruster
发明人： Torsten Kramer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Armbruster
IPC分类号： H01L29/84 , H01L21/62
CPC分类号： B81C99/008 , B81B7/0006 , B81B2207/093
摘要： A process for manufacturing a component is described. In a first manufacturing step a base structure having a substrate, a diaphragm, and a cavern region is provided. The diaphragm is oriented substantially parallel to a main plane of extension of the substrate. The cavern region is situated between the substrate and the diaphragm, and has an access opening. In a second manufacturing step, a first conductive layer is provided at least partially in the cavern region, in particular on a second side of the diaphragm facing the substrate, perpendicularly to the main plane of extension.
摘要翻译：描述了用于制造部件的工艺。在第一制造步骤中，提供具有基底，隔膜和洞穴区域的基底结构。隔膜取向为基本平行于基板延伸的主平面。洞穴区域位于基板和隔膜之间，并且具有进入开口。在第二制造步骤中，第一导电层至少部分地设置在垂直于主延伸平面的洞穴区域中，特别是在面向衬底的隔膜的第二侧上。

10. 发明申请

US20110151620A1 METHOD FOR MANUFACTURING CHIPS 有权
标题翻译：制造方法
公开(公告)号：US20110151620A1
公开(公告)日：2011-06-23
申请号：US12736721
申请日：2008-12-02
申请人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Armbruster
发明人： Torsten Kramer , Matthias Boehringer , Stefan Pinter , Hubert Benzel , Matthias Illing , Frieder Haag , Simon Armbruster
IPC分类号： H01L21/50
CPC分类号： H01L25/50 , B81C1/0038 , B81C2201/0191 , H01L21/02002 , H01L24/03 , H01L24/05 , H01L2224/05599 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941
摘要： A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the chip (1, 2), the diaphragm (11, 12) is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip (1, 2) in an electroplating process before the chip is separated.
摘要翻译：一种制造芯片（1,2）的方法，其中在跨越空腔（13）的半导体衬底（10）的表面层中产生至少一个隔膜（11,12）。然后将芯片（1,2）的功能集成到隔膜（11,12）中。为了分离芯片（1,2），隔膜（11,12）与基片复合体分离。根据本发明的方法的特征在于在芯片分离之前在电镀工艺中对芯片（1,2）的背面进行金属电镀。

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