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1. 发明申请

US20060172067A1 Chemical vapor deposition of chalcogenide materials 审中-公开
标题翻译：化学气相沉积硫族化物材料
公开(公告)号：US20060172067A1
公开(公告)日：2006-08-03
申请号：US11046114
申请日：2005-01-28
申请人： Stanford Ovshinsky , Smuruthi Kamepalli
发明人： Stanford Ovshinsky , Smuruthi Kamepalli
IPC分类号： C23C16/00 , B05D1/36 , B29C71/04
CPC分类号： C23C16/305 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.
摘要翻译：用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。在另一个实施方案中，具有根据本发明的性质的单层硫族化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。优选的材料是含有硫族元素Te和Ge和/或Sb的材料。

2. 发明申请

US20060135803A1 Chemical vapor deposition precursors for deposition of tantalum-based materials 有权
标题翻译：用于沉积钽基材料的化学气相沉积前体
公开(公告)号：US20060135803A1
公开(公告)日：2006-06-22
申请号：US11336585
申请日：2006-01-20
申请人： Smuruthi Kamepalli , Thomas Baum
发明人： Smuruthi Kamepalli , Thomas Baum
IPC分类号： C07F17/00
CPC分类号： C23C16/18 , C07F17/00 , C23C16/34
摘要： Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.
摘要翻译：适用于在基底上化学气相沉积含钽材料（例如钽，TaN，TaSiN等）的钽前驱体。钽前体是取代的环戊二烯基钽化合物。在本发明的一个方面，这些化合物被甲硅烷基化以构成钽/硅源试剂。本发明的前体有利地用于半导体制造应用中以形成与半导体器件结构的铜金属化相关的扩散阻挡层。

3. 发明申请

US20090022883A1 Chemical vapor deposition of chalcogenide materials via alternating layers 有权
标题翻译：化学气相沉积硫族化物材料经交替层
公开(公告)号：US20090022883A1
公开(公告)日：2009-01-22
申请号：US12284425
申请日：2008-09-22
申请人： Stanford R. Ovshinsky , Smuruthi Kamepalli
发明人： Stanford R. Ovshinsky , Smuruthi Kamepalli
IPC分类号： B05D5/12
CPC分类号： C23C16/305 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment,. a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.
摘要翻译：用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。在另一个实施例中根据本发明的具有性质的单层硫属化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。优选的材料是含有硫族元素Te和Ge和/或Sb的材料。

4. 发明授权

US07858152B2 Chemical vapor deposition of chalcogenide materials via alternating layers 有权
标题翻译：化学气相沉积硫族化物材料经交替层
公开(公告)号：US07858152B2
公开(公告)日：2010-12-28
申请号：US12284425
申请日：2008-09-22
申请人： Stanford R. Ovshinsky , Smuruthi Kamepalli
发明人： Stanford R. Ovshinsky , Smuruthi Kamepalli
IPC分类号： C23C16/00
CPC分类号： C23C16/305 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.
摘要翻译：用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。在另一个实施方案中，具有根据本发明的性质的单层硫族化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。优选的材料是含有硫族元素Te和Ge和/或Sb的材料。

5. 发明申请

US20080286446A1 Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials 审中-公开
标题翻译：种子辅助MOCVD阈值切换和相变材料的增长
公开(公告)号：US20080286446A1
公开(公告)日：2008-11-20
申请号：US12144081
申请日：2008-06-23
申请人： Smuruthi Kamepalli , Tyler Lowrey
发明人： Smuruthi Kamepalli , Tyler Lowrey
IPC分类号： C23C28/00
CPC分类号： C23C16/305 , C23C16/0272 , C23C16/045 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616
摘要： A method for forming electrically stimulable materials, including programmable resistance and electrical switching materials, in high aspect ratio features. The method includes forming a seed layer in the recessed portion of a feature and using the seed layer to direct the vapor phase deposition of an electrically stimulable material. The seed layer may provide nucleation sites that lead to preferential deposition of the electrically stimulable material on the seed layer relative to the sidewalls of the feature. The seed layer may promote the formation of a finely crystalline morphology of the electrically stimulable material to facilitate deposition in the recessed portions of a feature and inhibit blocking of the top of the feature by large crystals.
摘要翻译：一种用于在高纵横比特征中形成电刺激材料的方法，包括可编程电阻和电开关材料。该方法包括在特征的凹陷部分中形成种子层并且使用种子层来引导电刺激材料的气相沉积。种子层可以提供成核位置，其导致电刺激材料相对于特征的侧壁优先沉积在种子层上。种子层可以促进电刺激材料的细晶形态的形成，以便于沉积在特征的凹陷部分中并且通过大晶体抑制特征顶部的阻挡。

6. 发明申请

US20090275198A1 Vapor Phase Methods for Forming Electrodes in Phase Change Memory Devices 审中-公开
标题翻译：在相变存储器件中形成电极的气相方法
公开(公告)号：US20090275198A1
公开(公告)日：2009-11-05
申请号：US12113586
申请日：2008-05-01
申请人： Smuruthi Kamepalli , Tyler Lowrey
发明人： Smuruthi Kamepalli , Tyler Lowrey
IPC分类号： H01L21/44
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/16
摘要： A method for forming electrode materials uniformly and conformally within openings having small dimensions, including sublithographic dimensions, or high aspect ratios. The method includes the steps of providing an insulator layer having an opening formed therein, and forming a conformal conductive or semiresistive material over and within the opening. The method is a CVD or ALD process for forming metal nitride, metal aluminum nitride, and metal silicon nitride electrode compositions. The methods utilize metal precursors containing one or more ligands selected from alkyl, allyl, alkene, alkyne, acyl, amide, amine, immine, imide, azide, hydrazine, silyl, alkylsilyl, silylamine, chelating, hydride, cyclic, carbocyclic, cyclopentadienyl, phosphine, carbonyl, or halide. Suitable precursors include monometallic precursors having the general formula MRn, where M is a metal, R designates a ligand as indicated above and n is an integer corresponding to the number of ligands bonded to the central metal atom. M may be Ti, Ta, W, Nb, Mo, Pt, Cr, Co, Ni, or other transition metal.
摘要翻译：在具有小尺寸，例如亚光刻尺寸或高纵横比的开口内均匀且保形地形成电极材料的方法。该方法包括以下步骤：提供其中形成有开口的绝缘体层，并且在开口内部和内部形成共形导电或半材料材料。该方法是用于形成金属氮化物，金属氮化铝和金属氮化硅电极组合物的CVD或ALD工艺。该方法使用含有一种或多种选自烷基，烯丙基，炔，炔，酰基，酰胺，胺，胺，酰亚胺，叠氮化物，肼，甲硅烷基，烷基甲硅烷基，甲硅烷基胺，螯合氢化物，环状，碳环，环戊二烯基，膦，羰基或卤化物。合适的前体包括具有通式MRn的单金属前体，其中M是金属，R表示如上所述的配体，n是对应于与中心金属原子键合的配体数的整数。 M可以是Ti，Ta，W，Nb，Mo，Pt，Cr，Co，Ni或其它过渡金属。

7. 发明授权

US07329768B2 Chemical vapor deposition precursors for deposition of tantalum-based materials 有权
标题翻译：用于沉积钽基材料的化学气相沉积前体
公开(公告)号：US07329768B2
公开(公告)日：2008-02-12
申请号：US11336585
申请日：2006-01-20
申请人： Smuruthi Kamepalli , Thomas H. Baum
发明人： Smuruthi Kamepalli , Thomas H. Baum
IPC分类号： C07F17/00 , C07F9/00 , C23C18/00
CPC分类号： C23C16/18 , C07F17/00 , C23C16/34
摘要： Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.
摘要翻译：适用于在基底上化学气相沉积含钽材料（例如钽，TaN，TaSiN等）的钽前驱体。钽前体是取代的环戊二烯基钽化合物。在本发明的一个方面，这些化合物被甲硅烷基化以构成钽/硅源试剂。本发明的前体有利地用于半导体制造应用中以形成与半导体器件结构的铜金属化相关的扩散阻挡层。

8. 发明授权

US06989457B2 Chemical vapor deposition precursors for deposition of tantalum-based materials 有权
公开(公告)号：US06989457B2
公开(公告)日：2006-01-24
申请号：US10345616
申请日：2003-01-16
申请人： Smuruthi Kamepalli , Thomas H. Baum
发明人： Smuruthi Kamepalli , Thomas H. Baum
IPC分类号： C07F9/00 , H01L21/44 , B05D1/02 , C23C14/26
CPC分类号： C23C16/18 , C07F17/00 , C23C16/34
摘要： Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

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