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1. 发明授权

US07148142B1 System and method for imprint lithography to facilitate dual damascene integration in a single imprint act 有权
标题翻译：用于压印光刻的系统和方法，以便于在单一印记法中双重镶嵌一体化
公开(公告)号：US07148142B1
公开(公告)日：2006-12-12
申请号：US10874500
申请日：2004-06-23
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Khoi A. Phan
IPC分类号： H01L21/44
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76817 , H01L2221/1021
摘要： A system and method are provided to facilitate dual damascene interconnect integration in a single imprint step. The method provides for creation of a translucent imprint mold with three-dimensional features comprising the dual damascene pattern to be imprinted. The imprint mold is brought into contact with a photopolymerizable organosilicon imaging layer deposited upon a transfer layer which is spin coated or otherwise deposited upon a dielectric layer of a substrate. When the photopolymerizable layer is exposed to a source of illumination, it cures with a structure matching the dual damascene pattern of the imprint mold. A halogen breakthrough etch followed by oxygen transfer etch transfer the vias from the imaging layer into the transfer layer. A second halogen breakthrough etch followed by a second oxygen transfer etch transfer the trenches from the imaging layer into the transfer layer. A dielectric etch transfers the pattern from the transfer layer into the dielectric layer. A metal fill process then fills the dual damascene openings of the dielectric layer with metal.
摘要翻译：提供了一种系统和方法，以便在单个压印步骤中促进双镶嵌互连集成。该方法提供了具有三维特征的半透明压印模具的创建，该三维特征包括要印刷的双镶嵌图案。压印模具与沉积在转移层上的可光聚合的有机硅成像层接触，转移层被旋涂或以其它方式沉积在基底的电介质层上。当可光聚合层暴露于照明源时，它可以用匹配印模的双镶嵌图案的结构固化。卤素穿透蚀刻随后氧传递蚀刻将通孔从成像层转移到转移层中。第二个卤素穿透蚀刻，随后是第二次氧转移蚀刻，将沟槽从成像层转移到转移层中。电介质蚀刻将图案从转印层转移到电介质层中。然后，金属填充过程用金属填充介电层的双镶嵌开口。

2. 发明授权

US07158896B1 Real time immersion medium control using scatterometry 失效
标题翻译：实时浸入介质控制采用散射法
公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。已知的光栅结构被构建在衬底上。实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。

3. 发明授权

US07156925B1 Using supercritical fluids to clean lenses and monitor defects 有权
标题翻译：使用超临界流体清洁镜头并监测缺陷
公开(公告)号：US07156925B1
公开(公告)日：2007-01-02
申请号：US10978844
申请日：2004-11-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan , Srikanteswara Dakshina-Murthy
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan , Srikanteswara Dakshina-Murthy
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.
摘要翻译：公开了浸没式光刻方法，包括通过透镜和浸没液体照射第一光致抗蚀剂，浸没液体在第一装置中与透镜和第一光致抗蚀剂接触; 在第二装置中使透镜与超临界流体接触; 以及通过所述透镜和浸没液体照射第二光致抗蚀剂，所述浸没液体与所述透镜和所述第二光致抗蚀剂接触。

4. 发明授权

US07065427B1 Optical monitoring and control of two layers of liquid immersion media 失效
标题翻译：两层液浸介质的光学监测与控制
公开(公告)号：US07065427B1
公开(公告)日：2006-06-20
申请号：US10979367
申请日：2004-11-01
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
IPC分类号： G06F19/00 , G02B7/00 , H01L21/00
CPC分类号： G03F7/7085 , G03F7/70341 , G03F7/70591
摘要： A multi-layer immersion medium monitoring system for a lithographic process monitors characteristics of an immersion medium of a semiconductor manufacturing process. The multi-layer immersion medium includes at least a first liquid of a first density (or viscosity) and a second liquid of a lower density (or viscosity), both of which are interspersed between a final optical component and a semiconductor layer. The higher density layer is provided to reduce turbulence in the immersion medium during the lithographic processes. A scatterometry system monitors optical characteristics of the multi-layer immersion medium to effectuate control of a lithographic process.
摘要翻译：用于光刻工艺的多层浸渍介质监测系统监测半导体制造工艺的浸渍介质的特性。多层浸渍介质至少包括第一密度（或粘度）的第一液体和较低密度（或粘度）的第二液体，它们都分散在最终的光学部件和半导体层之间。提供更高密度的层以在光刻过程中减少浸没介质中的湍流。散射测量系统监测多层浸没介质的光学特性，以实现光刻工艺的控制。

5. 发明授权

US07604903B1 Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK) 有权
标题翻译：具有侧壁吸收器的面罩能够在纳米印刷光刻（1XMASK）中印刷更精细的特征，
公开(公告)号：US07604903B1
公开(公告)日：2009-10-20
申请号：US10768515
申请日：2004-01-30
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/50
摘要： A mask is provided to be used with nanoprint lithography processes to facilitate reproduction of small features required for the production of integrated circuits. A translucent substrate is provided along with one or more three-dimensional features that include one or more vertical sidewalls. An absorbing material is deposited upon one or more of the vertical sidewalls so that light in an incident direction to an upper surface of the substrate will be absorbed by the absorbing material, resulting in light blocking features. One or more horizontal surfaces are formed upon one or more of the three-dimensional features, which allow light rays to exit a lower surface of the substrate unobstructed by the absorbing material.
摘要翻译：提供掩模以与纳米印刷光刻工艺一起使用，以便于再现生产集成电路所需的小特征。提供了一个半透明衬底以及包括一个或多个垂直侧壁的一个或多个三维特征。吸收材料沉积在一个或多个垂直侧壁上，使得在衬底的上表面的入射方向上的光将被吸收材料吸收，导致阻光特征。一个或多个水平表面形成在三维特征中的一个或多个上，这允许光线离开衬底的下表面而不被吸收材料阻挡。

6. 发明授权

US07449348B1 Feedback control of imprint mask feature profile using scatterometry and spacer etchback 有权
标题翻译：使用散射法和间隔蚀刻蚀刻对印迹掩模特征轮廓的反馈控制
公开(公告)号：US07449348B1
公开(公告)日：2008-11-11
申请号：US10858605
申请日：2004-06-02
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan
IPC分类号： H01L21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L22/12
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for retrograde feature profiles on an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature profile via employing a scatterometry system to detect retrograde feature profiles, and mitigating the retrograde profiles via a spacer etchback procedure.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模上逆行特征轮廓的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测逆行特征轮廓，以及通过间隔回蚀程序来缓解逆行轮廓，从而有助于控制压印掩模特征轮廓。

7. 发明授权

US07187796B1 Systems and methods that employ exposure compensation to provide uniform CD control on reticle during fabrication 失效
标题翻译：使用曝光补偿的系统和方法在制造过程中对掩模版提供均匀的CD控制
公开(公告)号：US07187796B1
公开(公告)日：2007-03-06
申请号：US10676613
申请日：2003-10-01
申请人： Khoi A. Phan , Ramkumar Subramanian , Bhanwar Singh
发明人： Khoi A. Phan , Ramkumar Subramanian , Bhanwar Singh
IPC分类号： G06K9/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174
摘要： The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is complete, an inspection can be performed on the reticle to determine whether any parameters during fabrication and/or any data points are outside of acceptable tolerances. The data is collected and fed into an algorithm (e.g. data-mining algorithm) utilized to determine which fabrication parameters need to be modified then sends the data to a control system (e.g. advanced process control) to facilitate needed changes to the fabrication parameters.
摘要翻译：本发明涉及监测和控制掩模版制造工艺（例如采用电子束光刻工艺）。典型的制造过程涉及离散阶段，包括曝光，曝光后烘烤和显影。制造完成后，可以对掩模版进行检查，以确定制造期间和/或任何数据点中的任何参数是否超出可接受的公差。收集数据并将其馈送到用于确定哪些制造参数需要被修改的算法（例如数据挖掘算法）中，然后将数据发送到控制系统（例如高级过程控制），以便于对制造参数的所需改变。

8. 发明授权

US07159205B1 Use of non-lithographic shrink techniques for fabrication/making of imprints masks 失效
标题翻译：使用非光刻收缩技术制造/制作印记掩模
公开(公告)号：US07159205B1
公开(公告)日：2007-01-02
申请号：US10838830
申请日：2004-05-04
申请人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
发明人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
IPC分类号： G06F17/50
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/40
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及在压印掩模中在图案线形成期间促进改进的临界尺寸（CD）控制和减少线边缘粗糙度（LER）的系统和方法。本发明的一个方面提供了形成具有大于掩模抗蚀剂中最终期望的CD的特征。在施加非光刻收缩技术时，LER被减轻并且CD被减小到期望的目标公差内。

9. 发明授权

US06999254B1 Refractive index system monitor and control for immersion lithography 有权
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06999254B1
公开(公告)日：2006-02-14
申请号：US10967845
申请日：2004-10-18
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G02B7/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

10. 发明授权

US06809793B1 System and method to monitor reticle heating 有权
标题翻译：监控标线加热的系统和方法
公开(公告)号：US06809793B1
公开(公告)日：2004-10-26
申请号：US10050456
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G03B2752
CPC分类号： G03F7/70558 , G03F7/70875
摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.
摘要翻译：公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

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