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1. 发明授权

US07158896B1 Real time immersion medium control using scatterometry 失效
标题翻译：实时浸入介质控制采用散射法
公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。已知的光栅结构被构建在衬底上。实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。

2. 发明授权

US07604903B1 Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK) 有权
标题翻译：具有侧壁吸收器的面罩能够在纳米印刷光刻（1XMASK）中印刷更精细的特征，
公开(公告)号：US07604903B1
公开(公告)日：2009-10-20
申请号：US10768515
申请日：2004-01-30
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/50
摘要： A mask is provided to be used with nanoprint lithography processes to facilitate reproduction of small features required for the production of integrated circuits. A translucent substrate is provided along with one or more three-dimensional features that include one or more vertical sidewalls. An absorbing material is deposited upon one or more of the vertical sidewalls so that light in an incident direction to an upper surface of the substrate will be absorbed by the absorbing material, resulting in light blocking features. One or more horizontal surfaces are formed upon one or more of the three-dimensional features, which allow light rays to exit a lower surface of the substrate unobstructed by the absorbing material.
摘要翻译：提供掩模以与纳米印刷光刻工艺一起使用，以便于再现生产集成电路所需的小特征。提供了一个半透明衬底以及包括一个或多个垂直侧壁的一个或多个三维特征。吸收材料沉积在一个或多个垂直侧壁上，使得在衬底的上表面的入射方向上的光将被吸收材料吸收，导致阻光特征。一个或多个水平表面形成在三维特征中的一个或多个上，这允许光线离开衬底的下表面而不被吸收材料阻挡。

3. 发明授权

US07449348B1 Feedback control of imprint mask feature profile using scatterometry and spacer etchback 有权
标题翻译：使用散射法和间隔蚀刻蚀刻对印迹掩模特征轮廓的反馈控制
公开(公告)号：US07449348B1
公开(公告)日：2008-11-11
申请号：US10858605
申请日：2004-06-02
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan
IPC分类号： H01L21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L22/12
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for retrograde feature profiles on an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature profile via employing a scatterometry system to detect retrograde feature profiles, and mitigating the retrograde profiles via a spacer etchback procedure.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模上逆行特征轮廓的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测逆行特征轮廓，以及通过间隔回蚀程序来缓解逆行轮廓，从而有助于控制压印掩模特征轮廓。

4. 发明授权

US07381278B1 Using supercritical fluids to clean lenses and monitor defects 有权
标题翻译：使用超临界流体清洁镜头并监测缺陷
公开(公告)号：US07381278B1
公开(公告)日：2008-06-03
申请号：US11555564
申请日：2006-11-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A Phan , Srikanteswara Dakshina-Murthy
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A Phan , Srikanteswara Dakshina-Murthy
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.
摘要翻译：公开了浸没式光刻方法，包括通过透镜和浸没液体照射第一光致抗蚀剂，浸没液体在第一装置中与透镜和第一光致抗蚀剂接触; 在第二装置中使透镜与超临界流体接触; 以及通过所述透镜和浸没液体照射第二光致抗蚀剂，所述浸没液体与所述透镜和所述第二光致抗蚀剂接触。

5. 发明授权

US07156925B1 Using supercritical fluids to clean lenses and monitor defects 有权
标题翻译：使用超临界流体清洁镜头并监测缺陷
公开(公告)号：US07156925B1
公开(公告)日：2007-01-02
申请号：US10978844
申请日：2004-11-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan , Srikanteswara Dakshina-Murthy
发明人： Ramkumar Subramanian , Bhanwar Singh , Khoi A. Phan , Srikanteswara Dakshina-Murthy
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.
摘要翻译：公开了浸没式光刻方法，包括通过透镜和浸没液体照射第一光致抗蚀剂，浸没液体在第一装置中与透镜和第一光致抗蚀剂接触; 在第二装置中使透镜与超临界流体接触; 以及通过所述透镜和浸没液体照射第二光致抗蚀剂，所述浸没液体与所述透镜和所述第二光致抗蚀剂接触。

6. 发明授权

US07065427B1 Optical monitoring and control of two layers of liquid immersion media 失效
标题翻译：两层液浸介质的光学监测与控制
公开(公告)号：US07065427B1
公开(公告)日：2006-06-20
申请号：US10979367
申请日：2004-11-01
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
IPC分类号： G06F19/00 , G02B7/00 , H01L21/00
CPC分类号： G03F7/7085 , G03F7/70341 , G03F7/70591
摘要： A multi-layer immersion medium monitoring system for a lithographic process monitors characteristics of an immersion medium of a semiconductor manufacturing process. The multi-layer immersion medium includes at least a first liquid of a first density (or viscosity) and a second liquid of a lower density (or viscosity), both of which are interspersed between a final optical component and a semiconductor layer. The higher density layer is provided to reduce turbulence in the immersion medium during the lithographic processes. A scatterometry system monitors optical characteristics of the multi-layer immersion medium to effectuate control of a lithographic process.
摘要翻译：用于光刻工艺的多层浸渍介质监测系统监测半导体制造工艺的浸渍介质的特性。多层浸渍介质至少包括第一密度（或粘度）的第一液体和较低密度（或粘度）的第二液体，它们都分散在最终的光学部件和半导体层之间。提供更高密度的层以在光刻过程中减少浸没介质中的湍流。散射测量系统监测多层浸没介质的光学特性，以实现光刻工艺的控制。

7. 发明授权

US08547521B1 Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence 有权
标题翻译：控制浸没式光刻液温度以保持温度梯度以减少湍流的系统和方法
公开(公告)号：US08547521B1
公开(公告)日：2013-10-01
申请号：US11000653
申请日：2004-12-01
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G03B27/42 , G03B27/52 , G03B27/54
CPC分类号： G03F7/70891 , G03F7/70341
摘要： The subject invention provides systems and methods that monitor and/or control turbulence of an immersion medium. The systems and methods relate to computer controlled techniques that reduce effects of immersion medium flow due to a liquid temperature gradient. According to an aspect of the subject invention, a number of temperature measurements of the immersion medium are obtained, and the temperature measurements are utilized to generate a gradient map of the immersion medium. By way of illustration, the temperature measurements can be made via wireless temperature sensors. The gradient map can be utilized to understand the stability of the immersion medium. According to an aspect of the subject invention, instability identified with the gradient map can be mitigated.
摘要翻译：本发明提供了监测和/或控制浸没介质的湍流的系统和方法。这些系统和方法涉及由于液体温度梯度而降低浸没介质流动影响的计算机控制技术。根据本发明的一个方面，获得浸渍介质的多个温度测量值，并利用温度测量值来产生浸渍介质的梯度图。作为说明，可以通过无线温度传感器进行温度测量。梯度图可用于了解浸没介质的稳定性。根据本发明的一个方面，可以减轻用梯度图识别的不稳定性。

8. 发明授权

US07386162B1 Post fabrication CD modification on imprint lithography mask 失效
标题翻译：压印光刻掩模后制造CD修改
公开(公告)号：US07386162B1
公开(公告)日：2008-06-10
申请号：US10874498
申请日：2004-06-23
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G06K9/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/67242
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates control of imprint mask critical dimension via employing a scatterometry system to detect imprint mask critical dimension error, and mitigating the error via a spacer etchback procedure.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模临界尺寸误差的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测压印掩模临界尺寸误差并通过间隔回蚀程序来减轻误差，从而有助于控制压印掩模临界尺寸。

9. 发明授权

US07376259B1 Topography compensation of imprint lithography patterning 失效
标题翻译：压印光刻图案的地形补偿
公开(公告)号：US07376259B1
公开(公告)日：2008-05-20
申请号：US10874499
申请日：2004-06-23
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G06K9/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及修改压印掩模的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化，从而有助于控制印迹掩模特征高度。

10. 发明授权

US08007631B2 System and method for imprint lithography to facilitate dual damascene integration with two imprint acts 有权
标题翻译：用于压印光刻的系统和方法，以促进双重镶嵌与两个印记动作的整合
公开(公告)号：US08007631B2
公开(公告)日：2011-08-30
申请号：US11741991
申请日：2007-04-30
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： C23C10/00 , C29C59/02 , C03C17/22
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译：提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。

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