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    • 6. 发明申请
    • Voltage controlled oscillator
    • 压控振荡器
    • US20080007364A1
    • 2008-01-10
    • US11783481
    • 2007-04-10
    • Tadashi Chiba
    • Tadashi Chiba
    • H03B5/12
    • H03B5/1228H03B5/1215H03B5/1253H03B5/1293H03B2200/0062
    • A voltage controlled oscillator (VCO) conducts current on two paths through parallel inductors and parallel cross-coupled metal-oxide-semiconductor transistors. A pair of varactors are connected in series on a third path extending from a node between one inductor and one transistor to a node between the other inductor and the other transistor. The oscillation frequency is controlled by a voltage applied to a node between the two varactors on the third path. Each varactor is structured as a metal-oxide-semiconductor transistor with interconnected source and drain electrodes, a gate electrode, a body region below the gate electrode, and a body terminal region extending beyond the gate electrode. An adjustment voltage applied to the body terminal region shifts the voltage-capacitance curve of the varactor and the voltage-frequency curve of the VCO without changing the shapes of these curves, providing a simple way to adjust the VCO to meet application requirements.
    • 压控振荡器(VCO)通过并联电感器和并联交叉耦合的金属氧化物半导体晶体管在两个路径上传导电流。 一对变容二极管在从一个电感器和一个晶体管之间的节点延伸到另一个电感器和另一个晶体管之间的节点的第三路径上串联连接。 振荡频率由施加到第三路径上的两个变容二极管之间的节点的电压控制。 每个变容二极管被构造为具有互连的源极和漏极电极,栅极电极,栅极电极下方的主体区域以及延伸超过栅极电极的主体端子区域的金属氧化物半导体晶体管。 施加到主体端子区域的调整电压使变容二极管的电压 - 电容曲线和VCO的电压 - 频率曲线偏移,而不改变这些曲线的形状,提供了一种调整VCO以满足应用要求的简单方法。
    • 7. 发明授权
    • Braking force distribution controlling apparatus
    • 制动力分配控制装置
    • US5938299A
    • 1999-08-17
    • US922673
    • 1997-09-03
    • Masahiro HaraTadashi Chiba
    • Masahiro HaraTadashi Chiba
    • B60T8/26B60T8/1766B60T8/28B60T8/58B60T13/00
    • B60T8/1766
    • In a braking force distribution controlling apparatus mounted on a car and arranged to perform such a control as to make a rear-wheel braking force smaller than a front-wheel braking force when predetermined initiation conditions are met, one of the initiation condition is to satisfy either one of such a first condition that a body deceleration is not less than a first predetermined deceleration K1 and that a rear-wheel slip value is a first predetermined value or more greater than a front-wheel slip value and such a second condition that the body deceleration is not less than a second predetermined deceleration K2 which is a value greater than the aforementioned first predetermined deceleration K1.
    • 在安装在轿厢上的制动力分配控制装置中,在满足规定的起动条件的情况下,配置为进行使后轮制动力小于前轮制动力的控制,起动条件之一为满足 这样的第一条件中的任何一个,即身体减速度不小于第一预定减速度K1,并且后轮滑移值是比前轮滑移值大的第一预定值或更大的第二条件, 车身减速度不小于比上述第一预定减速度K1大的值的第二预定减速度K2。
    • 9. 发明授权
    • Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus
    • 紫外线检测装置及其制造方法以及紫外线量测定装置
    • US08044484B2
    • 2011-10-25
    • US12915150
    • 2010-10-29
    • Noriyuki MiuraTadashi Chiba
    • Noriyuki MiuraTadashi Chiba
    • H01L29/78
    • H01L31/02162H01L27/144H01L31/105
    • The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
    • 本发明提供了一种紫外线检测装置,其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层,其形成在绝缘层上,首先是横向PN结型, 形成在硅半导体层中的第二光电二极管,形成在硅半导体层上的层间绝缘膜,由氮化硅制成的第一滤光层,形成在设置在第一光电二极管上的层间绝缘膜之上,并且产生波长范围的光 的UV-B波以上通过,以及由氮化硅构成的第二过滤层,其形成在设置在第二光电二极管上的层间绝缘膜的上方,并允许位于UV-A波的波长范围内的光或 较高通过。