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1. 发明申请

US20110042769A1 ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS 有权
标题翻译：超紫外检测装置及制造方法及超紫外线测量装置
公开(公告)号：US20110042769A1
公开(公告)日：2011-02-24
申请号：US12915150
申请日：2010-10-29
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜之上，并允许位于UV-A波的波长范围内的光或较高通过。

2. 发明授权

US07843031B2 Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus 有权
标题翻译：紫外线检测装置及其制造方法以及紫外线量测定装置
公开(公告)号：US07843031B2
公开(公告)日：2010-11-30
申请号：US12036016
申请日：2008-02-22
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L29/78
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜之上，并允许位于UV-A波的波长范围内的光或较高通过。

3. 发明申请

US20080237763A1 ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THEREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS 有权
标题翻译：超紫外检测装置及其制造方法及超紫外线测量装置
公开(公告)号：US20080237763A1
公开(公告)日：2008-10-02
申请号：US12036016
申请日：2008-02-22
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L31/0203 , H01L31/18
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜的上方，并允许位于UV-A波的波长范围内的光或较高通过。

4. 发明授权

US08044484B2 Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus 有权
标题翻译：紫外线检测装置及其制造方法以及紫外线量测定装置
公开(公告)号：US08044484B2
公开(公告)日：2011-10-25
申请号：US12915150
申请日：2010-10-29
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L29/78
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜的上方，并允许位于UV-A波的波长范围内的光或较高通过。

5. 发明授权

US08039917B2 Photodiode and photo IC using same 有权
标题翻译：光电二极管和照相IC使用相同
公开(公告)号：US08039917B2
公开(公告)日：2011-10-18
申请号：US12037115
申请日：2008-02-26
申请人： Noriyuki Miura
发明人： Noriyuki Miura
IPC分类号： H01L31/06
CPC分类号： H01L31/035272 , H01L31/1037
摘要： A photodiode includes a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.
摘要翻译：光电二极管包括在绝缘层上形成的第一硅半导体层，形成在绝缘层上的第二硅半导体层，其厚度范围为大于或等于3nm至小于或等于36nm，低浓度形成在第二硅半导体层中并且其中P型和N型中的任一种的杂质以低浓度扩散的扩散层，形成在第一硅中的P型高浓度扩散层半导体层，其中P型杂质以高浓度扩散;以及N型高浓度扩散层，其与低浓度扩散层介于其间的P型高浓度扩散层相对，其中N型杂质以高浓度扩散。

6. 发明申请

US20080296642A1 PHOTODIODE AND PHOTO IC USING SAME 有权
标题翻译：使用相同的光电和照片IC
公开(公告)号：US20080296642A1
公开(公告)日：2008-12-04
申请号：US12037115
申请日：2008-02-26
申请人： Noriyuki Miura
发明人： Noriyuki Miura
IPC分类号： H01L31/113
CPC分类号： H01L31/035272 , H01L31/1037
摘要： The present invention provides a photodiode comprising a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.
摘要翻译：本发明提供一种光电二极管，其包括在绝缘层上形成的第一硅半导体层，形成在绝缘层上的第二硅半导体层，其厚度范围为大于或等于3nm至小于或等于36nm，形成在第二硅半导体层中并且其中P型和N型中的任一种的杂质以低浓度扩散的低浓度扩散层，形成的P型高浓度扩散层在第一硅半导体层中，P型杂质以高浓度扩散，并且与具有低浓度扩散的P型高浓度扩散层相反的N型高浓度扩散层并且其中N型杂质以高浓度扩散。

7. 发明申请

US20070274198A1 Electronic Circuit 有权
标题翻译：电子电路
公开(公告)号：US20070274198A1
公开(公告)日：2007-11-29
申请号：US11660450
申请日：2005-08-17
申请人： Tadahiro Kuroda , Daisuke Mizoguchi , Noriyuki Miura
发明人： Tadahiro Kuroda , Daisuke Mizoguchi , Noriyuki Miura
IPC分类号： H04J1/12
CPC分类号： H01L25/0657 , H01L23/48 , H01L23/645 , H01L2224/32145 , H01L2225/06513 , H01L2225/06527
摘要： The invention provides an electronic circuit capable of reducing crosstalk to such a degree that the crosstalk can be substantially disregarded even where a plurality of communications channels are juxtaposed in close proximity to each other when achieving communications between substrates by inductive coupling. The transmitter coils 11 are placed on a lower chip and the receiver coils 12 are placed on an upper chip, and where it is assumed that the distance between the chips is X, and the distance between the communications channels is Y(that is, the horizontal distance between the coil centers), there exists a position, where the magnetic flux density in the receiver coils 12 resulting from the transmitter coils 11 becomes zero (0), at a predetermined Yo. That is, since large crosstalk occurs when Y is small, and small crosstalk of an inverted symbol occurs when Y is large, in the meantime, there will exist a position, where the value obtained by integrating the magnetic flux density B in the receiver coils 12 becomes zero (0), without fail. Any crosstalk is not generated theoretically at the position.
摘要翻译：本发明提供一种电子电路，其能够将串扰降低到这样的程度，即，即使当通过电感耦合来实现基板之间的通信时，即使在多个通信信道彼此靠近的情况下并置的情况下，也可以基本上忽略串扰。发射器线圈11被放置在下部芯片上，接收器线圈12被放置在上部芯片上，并且假定芯片之间的距离为X，并且通信信道之间的距离为Y（即，在线圈中心之间的水平距离），存在一个位置，其中由发射器线圈11产生的接收器线圈12中的磁通密度在预定的Yo时变为零（0）。也就是说，由于当Y较小时发生大的串扰，并且当Y大时发生反相符号的小串扰，同时存在一个位置，其中通过将磁通密度B积分在接收器线圈中而获得的值 12变为零（0）。任何串扰在理论上都不会在该位置产生。

8. 发明申请

US20060176676A1 Electronic circuit 有权
标题翻译：电子电路
公开(公告)号：US20060176676A1
公开(公告)日：2006-08-10
申请号：US11302501
申请日：2005-12-14
申请人： Tadahiro Kuroda , Daisuke Mizoguchi , Noriyuki Miura
发明人： Tadahiro Kuroda , Daisuke Mizoguchi , Noriyuki Miura
IPC分类号： H05K7/06
CPC分类号： H04B5/02 , H04W52/283 , Y10T29/49155
摘要： The invention provides an electronic circuit capable of carrying out communications by inductive coupling with minimum power consumption between substrates. In the electronic circuit according to the invention, although the amplification factor of the amplifier 10a is 1, the amplification factors of the amplifiers 10b through 10d are, respectively, 2, 4 and 8. Amplification is carried out at the amplification factors 1 through 15 (=1+2+4+8) as a whole by a combination thereof. The transmit power control register 21 outputs ON and OFF signals to the respective amplifiers 10a through 10d so as to bring about transmit power responsive to the distance to a substrate having a receiver coil which is a destination of transmission (that is, the distance between a transmitter coil and a receiver coil), in further detail, so as to have an amplification factor by which transmit power proportionate to the distance can be obtained, and selects a combination of the amplifiers 10a through 10d.
摘要翻译：本发明提供一种电子电路，其能够通过电感耦合进行通信，并且在基板之间具有最小功耗。在根据本发明的电子电路中，虽然放大器10a的放大系数为1，但是放大器10b至10d的放大系数分别为2,4和8.放大因子 1〜15（= 1 + 2 + 4 + 8）。发射功率控制寄存器21将ON和OFF信号输出到相应的放大器10a至10d，以便响应于具有作为传输目的地的接收器线圈的衬底的距离（即，距离在发射器线圈和接收器线圈之间），以便具有放大因子，通过该放大系数可以获得与距离成比例的发射功率，并且选择放大器10a至10d的组合。

9. 发明授权

US06825074B2 Method of manufacturing a silicon-on-insulator (SOI) semiconductor device 失效
标题翻译：制造绝缘体上硅（SOI）半导体器件的方法
公开(公告)号：US06825074B2
公开(公告)日：2004-11-30
申请号：US10092499
申请日：2002-03-08
申请人： Noriyuki Miura
发明人： Noriyuki Miura
IPC分类号： H01L218238
CPC分类号： H01L29/78696 , H01L21/76264 , H01L21/76281 , H01L29/66772 , H01L29/78654
摘要： A silicon-on-insulator (SOI) substrate is provided which includes a silicon substrate having an upper surface, a first insulating layer having a lower surface extending horizontally over the upper surface of the silicon substrate, and a silicon layer having a lower surface extending horizontally over an upper surface of the first insulating layer. A second insulating layer is formed over an upper surface of the silicon layer of the SOI substrate. Impurity ions are implanted into the silicon layer of the SOI substrate such that a peak ion concentration along a vertical depth of the silicon layer is located between an intermediate horizontal plane of the silicon layer and the lower surface of the silicon layer inclusive, wherein the intermediate horizontal plane extends horizontally within the silicon layer at half a vertical depth of the silicon layer. A gate electrode is formed on the second insulating layer.
摘要翻译：提供一种绝缘体上硅（SOI）衬底，其包括具有上表面的硅衬底，具有在硅衬底的上表面上水平延伸的下表面的第一绝缘层，以及具有下表面延伸的硅层水平地覆盖在第一绝缘层的上表面上。在SOI衬底的硅层的上表面上形成第二绝缘层。将杂质离子注入到SOI衬底的硅层中，使得沿着硅层的垂直深度的峰离子浓度位于硅层的中间水平面和包含硅层的下表面之间，其中中间体水平面在硅层的半垂直深度处在硅层内水平延伸。栅电极形成在第二绝缘层上。

10. 发明授权

US08020925B2 Front structure of cab-over type vehicle 失效
标题翻译：驾驶室前部结构
公开(公告)号：US08020925B2
公开(公告)日：2011-09-20
申请号：US12515572
申请日：2007-11-27
申请人： Noriyuki Miura , Tatsuji Ooeda
发明人： Noriyuki Miura , Tatsuji Ooeda
IPC分类号： B60J7/00
CPC分类号： B62D33/067 , B62D21/152
摘要： A front structure of a cab-over type vehicle 1 includes a side member 10, a cab mount bracket 3, and a stiffener inner reinforcement 4. The cab mount bracket 3 is fixed to the side member 10, and includes a bracket base 31 mounted on a front end portion 15 of the side member 10 and a shaft supporting portion 30 supporting a cab 5. The stiffener inner reinforcement 4 is fixed to the side member 10, and includes a vertical wall portion 44. The vertical wall portion 44 is disposed in a direction that crosses a front-rear direction, between an upper plate 11 and a lower plate 12 of the side member 10 and below a rear end edge 36 of the bracket base 31. When a load F toward the rear is applied to the cab mount bracket 3, the vertical wall portion 44 suppresses upward bending deformation of the front end portion 15 of the side member 10.
摘要翻译：轿厢式车辆1的前部结构包括侧部构件10，驾驶室安装支架3和加强件内部加强件4.驾驶室安装支架3固定到侧部构件10，并且包括安装在支架底座31上的支架底座31 在侧部件10的前端部分15和支撑驾驶室5的轴支撑部分30.加强件内部加强件4固定在侧部件10上，并且包括垂直壁部分44.垂直壁部分44被设置在横向于前后方向的方向上，在侧构件10的上板11和下板12之间以及托架基座31的后端边缘36的下方。当向后方施加负载F时驾驶室安装托架3，垂直壁部44抑制侧构件10的前端部15的向上弯曲变形。

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