专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07276298B2 Substance for intermediate layer of organic electroluminescent device and organic electroluminescent device using the same 有权
标题翻译：有机电致发光器件的中间层的物质和使用其的有机电致发光器件
公开(公告)号：US07276298B2
公开(公告)日：2007-10-02
申请号：US10998821
申请日：2004-11-30
申请人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
发明人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
IPC分类号： H01L51/54 , C09K11/06 , H05B33/12
CPC分类号： H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/006 , H01L51/5096 , H01L2251/308 , Y10S428/917
摘要： The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.
摘要翻译：本发明涉及包含胺衍生物物质的有机电致发光器件的中间层，其可以进一步包含能够形成交联的官能团。特别地，该物质可以具有优异的溶解性并且可以容易地形成为薄膜。具体地说，薄膜在溶剂中可以是稳定的，并且可以容易地形成为各种厚度。此外，可以根据空穴传输材料的特性容易地控制带隙和LUMO / HOMO值，从而可以形成具有期望特性的中间层。因此，引入使用本发明的物质制造的中间层作为中间层可以产生具有高效率和更长寿命的有机电致发光器件。

2. 发明申请

US20050136288A1 Substance for intermediate layer of organic electroluminescent device and organic electroluminescent device using the same 有权
标题翻译：有机电致发光器件的中间层的物质和使用其的有机电致发光器件
公开(公告)号：US20050136288A1
公开(公告)日：2005-06-23
申请号：US10998821
申请日：2004-11-30
申请人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
发明人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
IPC分类号： H01L51/50 , C07C219/32 , C07D311/16 , C09K11/00 , C09K11/06 , H01L51/00 , H05B33/12 , H05B33/14 , H05B33/18 , H05B33/20 , H05B33/22 , H05B33/28
CPC分类号： H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/006 , H01L51/5096 , H01L2251/308 , Y10S428/917
摘要： The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.
摘要翻译：本发明涉及包含胺衍生物物质的有机电致发光器件的中间层，其可以进一步包含能够形成交联的官能团。特别地，该物质可以具有优异的溶解性并且可以容易地形成为薄膜。具体地说，薄膜在溶剂中可以是稳定的，并且可以容易地形成为各种厚度。此外，可以根据空穴传输材料的特性容易地控制带隙和LUMO / HOMO值，从而可以形成具有期望特性的中间层。因此，使用本发明的物质制造的中间层作为中间层的引入可以产生效率高，使用寿命长的有机电致发光器件。

3. 发明授权

US08513101B2 Method of synthesizing nanowires 有权
标题翻译：纳米线合成方法
公开(公告)号：US08513101B2
公开(公告)日：2013-08-20
申请号：US12560768
申请日：2009-09-16
申请人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
发明人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02532 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L21/02603 , H01L21/0262 , H01L21/02639
摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
摘要翻译：一种合成纳米线的方法。该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线）方法。

4. 发明授权

US08330142B2 Quantum dot light emitting device having quantum dot multilayer 有权
标题翻译：量子点发光器件具有量子点多层
公开(公告)号：US08330142B2
公开(公告)日：2012-12-11
申请号：US12708664
申请日：2010-02-19
申请人： Kyung-sang Cho , Byoung-lyong Choi , Eun-kyung Lee , Tae-ho Kim , Sang-jin Lee
发明人： Kyung-sang Cho , Byoung-lyong Choi , Eun-kyung Lee , Tae-ho Kim , Sang-jin Lee
IPC分类号： H01L21/02
CPC分类号： H01L51/502 , B82Y20/00 , B82Y30/00 , H01L33/14 , H01L51/0003 , H01L51/0007 , H01L51/5036 , H01L51/5048 , H01L51/5096
摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.
摘要翻译：量子点发光器件包括：衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与量子点发光层的能带电平。

5. 发明授权

US07754508B2 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US07754508B2
公开(公告)日：2010-07-13
申请号：US11335503
申请日：2006-01-20
申请人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

6. 发明申请

US20090189150A1 Organic semiconducting copolymer and organic electronic device including the same 有权
标题翻译：有机半导体共聚物和包括其的有机电子器件
公开(公告)号：US20090189150A1
公开(公告)日：2009-07-30
申请号：US12219273
申请日：2008-07-18
申请人： Bang-Lin Lee , Kook-min Han , Eun-kyung Lee , Do-hwan Kim , Hyun-sik Moon
发明人： Bang-Lin Lee , Kook-min Han , Eun-kyung Lee , Do-hwan Kim , Hyun-sik Moon
IPC分类号： H01L51/05 , C08F28/06 , C08F4/44 , C08F230/04 , C08F4/72
CPC分类号： C08G61/126 , C08G61/123 , H01B1/127 , H01L51/0036 , H01L51/0043 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： An organic semiconducting copolymer according to example embodiments may be represented by Formula 1 below: An organic electronic device may include the above organic semiconducting copolymer. The organic semiconducting copolymer according to example embodiments may provide improved solubility, processability, and thin film properties. Consequently, the organic semiconducting copolymer may be used in a variety of electronic devices. A suitable electronic device may be an organic thin film transistor. When an active layer of an organic thin film transistor includes the organic semiconducting copolymer, higher charge mobility and lower breaking leakage current may be achieved.
摘要翻译：根据示例性实施方案的有机半导体共聚物可以由下式1表示：有机电子器件可以包括上述有机半导体共聚物。根据示例性实施方案的有机半导体共聚物可以提供改善的溶解度，可加工性和薄膜性质。因此，有机半导体共聚物可用于各种电子器件中。合适的电子器件可以是有机薄膜晶体管。当有机薄膜晶体管的有源层包括有机半导体共聚物时，可实现较高的电荷迁移率和较低的断开漏电流。

7. 发明申请

US20060115916A1 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufacture by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US20060115916A1
公开(公告)日：2006-06-01
申请号：US11335503
申请日：2006-01-20
申请人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

8. 发明申请

US20050074969A1 Contact structure of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触结构及其形成方法
公开(公告)号：US20050074969A1
公开(公告)日：2005-04-07
申请号：US10915538
申请日：2004-08-11
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L29/41 , H01L21/20 , H01L21/265 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/82 , H01L21/8238 , H01L23/48 , H01L23/52 , H01L27/04 , H01L29/08 , H01L29/78
CPC分类号： H01L21/823814 , H01L21/26533 , H01L21/28506 , H01L21/823878 , H01L24/05 , H01L29/0847 , H01L29/78 , H01L2924/13091 , H01L2924/00
摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
摘要翻译：半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层在衬底中的导电掺杂层下面。

9. 发明授权

US5648979A Assembly of VCSEL light source and VCSEL optical detector 失效
标题翻译： VCSEL光源和VCSEL光检测器的组装
公开(公告)号：US5648979A
公开(公告)日：1997-07-15
申请号：US581259
申请日：1995-12-29
申请人： Jong-kuk Mun , Yong-hee Lee , Eun-kyung Lee , Kyung-ho Ha
发明人： Jong-kuk Mun , Yong-hee Lee , Eun-kyung Lee , Kyung-ho Ha
IPC分类号： H01L33/00 , H01S5/026 , H01S5/183 , H01S3/19 , H01L27/15 , H01S3/08
CPC分类号： H01S5/0264 , H01S5/1078 , H01S5/183
摘要： There is provided an assembly of a light source and an optical detector, each using a vertical cavity surface emitting laser (VCSEL). To control light emission of the VCSEL light source, spontaneous light emitted laterally therefrom is converted into an electrical signal. The optical detector for monitoring light is provided around the light source to supply the feedback electrical signal. The inner surface facing the light source of the optical detector is circular to absorb the spontaneous light and the outer surface thereof is polygonal having a plurality of peaks and valleys. Therefore, most of spontaneous light absorbed in the optical detector is reflected within, not penetrating the outer surface thereof, thereby extending the path of the spontaneous light in the optical detector and increasing the light intensity converted into an electrical signal.
摘要翻译：提供了一种光源和光学检测器的组件，每个使用垂直腔表面发射激光器（VCSEL）。为了控制VCSEL光源的发光，将其侧向发射的自发光转换成电信号。在光源周围设置用于监视光的光检测器，以提供反馈电信号。面向光学检测器的光源的内表面是圆形的以吸收自发光，并且其外表面是具有多个峰和谷的多边形。因此，在光检测器中吸收的大部分自发光被反射到内部，不会穿透其外表面，从而延长光学检测器中自发光的路径，并增加转换成电信号的光强度。

10. 发明授权

US09230801B2 Graphene structure and method of fabricating the same 有权
标题翻译：石墨烯结构及其制造方法
公开(公告)号：US09230801B2
公开(公告)日：2016-01-05
申请号：US13229183
申请日：2011-09-09
申请人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
发明人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
IPC分类号： B32B9/00 , H01L21/02 , C01B31/04
CPC分类号： H01L21/02381 , C01B32/182 , H01L21/02428 , H01L21/02444 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02527 , H01L21/0259 , H01L21/02606 , H01L21/02664 , Y10T428/13 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
摘要翻译：石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。可以使用Ge形成石墨烯结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式