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1. 发明申请

US20080056641A1 Header-replaceable hybrid waveguide sensor 失效
标题翻译：头可更换混合波导传感器
公开(公告)号：US20080056641A1
公开(公告)日：2008-03-06
申请号：US11896309
申请日：2007-08-30
申请人： Soo Jin Jung , Kweon Joung Il , Dong Ho Shin , Won Hoe Koo , Gwan Su Lee
发明人： Soo Jin Jung , Kweon Joung Il , Dong Ho Shin , Won Hoe Koo , Gwan Su Lee
IPC分类号： G02B6/26
CPC分类号： G02B6/1221 , B82Y20/00 , G02B6/1226 , G02B6/26 , G02B2006/12138 , G02B2006/12147
摘要： A header-replaceable hybrid waveguide sensor comprises a header coupling section including a dielectric layer having an optical signal input section and an optical signal output section formed in one end thereof, the dielectric layer having two lines of protrusions formed on the upper surface thereof; and a polymer layer formed on and under the dielectric layer; and a sensor header including a dielectric layer having a protrusion formed on the upper surface thereof and a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed in a portion corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on the upper surface of the dielectric layer exposed by the opening.
摘要翻译：标题可替换的混合波导传感器包括一个头部耦合部分，其包括具有光信号输入部分的介质层和在其一端形成的光信号输出部分，该电介质层具有形成在其上表面上的两条突起线; 以及形成在电介质层上和下面的聚合物层; 以及传感器头，其包括在其上表面上形成有突起的介电层和设置在其中的预定尺寸的金属薄膜; 所述聚合物层形成在所述电介质层上和下面，并且具有形成在与所述薄金属膜相对应的部分中的开口，所述开口具有比所述薄金属膜宽的宽度; 以及形成在由开口暴露的电介质层的上表面上的受体层。

2. 发明授权

US07512293B2 Header-replaceable hybrid waveguide sensor 失效
标题翻译：头可更换混合波导传感器
公开(公告)号：US07512293B2
公开(公告)日：2009-03-31
申请号：US11896309
申请日：2007-08-30
申请人： Soo Jin Jung , Il Kweon Joung , Dong Ho Shin , Won Hoe Koo , Gwan Su Lee
发明人： Soo Jin Jung , Il Kweon Joung , Dong Ho Shin , Won Hoe Koo , Gwan Su Lee
IPC分类号： G02B6/26
CPC分类号： G02B6/1221 , B82Y20/00 , G02B6/1226 , G02B6/26 , G02B2006/12138 , G02B2006/12147
摘要： A header-replaceable hybrid waveguide sensor comprises a header coupling section including a dielectric layer having an optical signal input section and an optical signal output section formed in one end thereof, the dielectric layer having two lines of protrusions formed on the upper surface thereof; and a polymer layer formed on and under the dielectric layer; and a sensor header including a dielectric layer having a protrusion formed on the upper surface thereof and a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed in a portion corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on the upper surface of the dielectric layer exposed by the opening.
摘要翻译：标题可替换的混合波导传感器包括一个头部耦合部分，其包括具有光信号输入部分的介质层和在其一端形成的光信号输出部分，该电介质层具有形成在其上表面上的两条突起线; 以及形成在电介质层上和下面的聚合物层; 以及传感器头，其包括在其上表面上形成有突起的介电层和设置在其中的预定尺寸的金属薄膜; 所述聚合物层形成在所述电介质层上和下面，并且具有形成在与所述薄金属膜相对应的部分中的开口，所述开口具有比所述薄金属膜宽的宽度; 以及形成在由开口暴露的电介质层的上表面上的受体层。

3. 发明申请

US20080056640A1 Hybrid waveguide sensor 失效
公开(公告)号：US20080056640A1
公开(公告)日：2008-03-06
申请号：US11896102
申请日：2007-08-29
申请人： Won Hoe Koo , Dong Ho Shin , Kweon Joung , Gwan Su Lee , Soo Jin Jung
发明人： Won Hoe Koo , Dong Ho Shin , Kweon Joung , Gwan Su Lee , Soo Jin Jung
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00 , G02B2006/12138 , G02B2006/12147
摘要： A hybrid waveguide sensor comprises a dielectric layer having one optical signal input section formed in one end thereof and one optical signal output section formed in the other end thereof, the dielectric layer having a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed to expose a portion of the dielectric layer corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on a portion of the dielectric layer corresponding to the thin metal film exposed by the opening.

4. 发明授权

US07433553B2 Hybrid waveguide sensor 失效
标题翻译：混合波导传感器
公开(公告)号：US07433553B2
公开(公告)日：2008-10-07
申请号：US11896102
申请日：2007-08-29
申请人： Won Hoe Koo , Dong Ho Shin , Il Kweon Joung , Gwan Su Lee , Soo Jin Jung
发明人： Won Hoe Koo , Dong Ho Shin , Il Kweon Joung , Gwan Su Lee , Soo Jin Jung
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00 , G02B2006/12138 , G02B2006/12147
摘要： A hybrid waveguide sensor comprises a dielectric layer having one optical signal input section formed in one end thereof and one optical signal output section formed in the other end thereof, the dielectric layer having a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed to expose a portion of the dielectric layer corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on a portion of the dielectric layer corresponding to the thin metal film exposed by the opening.
摘要翻译：混合波导传感器包括介电层，其一端形成有一个光信号输入部分，另一端形成一个光信号输出部分，该电介质层具有设置在其中的预定尺寸的金属薄膜; 形成在电介质层上和下面的聚合物层，并且具有形成为暴露与薄金属膜相对应的介电层的一部分的开口，该开口具有比金属薄膜宽的宽度; 以及形成在与由开口暴露的薄金属膜相对应的介电层的一部分上的受体层。

5. 发明申请

US20100213480A1 LENS FOR LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE PACKAGE HAVING THE SAME 有权
标题翻译：用于发光二极管封装和发光二极管封装的镜头
公开(公告)号：US20100213480A1
公开(公告)日：2010-08-26
申请号：US12607694
申请日：2009-10-28
申请人： Soo Jin JUNG , Joong Kon Son , Gwan Su Lee
发明人： Soo Jin JUNG , Joong Kon Son , Gwan Su Lee
IPC分类号： H01L33/58 , F21V5/04
CPC分类号： H01L33/58 , G02B19/0028 , G02B19/0061 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.
摘要翻译：用于发光二极管封装的透镜和具有该透镜的发光二极管封装具有简单的结构并且通过防止从发光二极管芯片发出的光在透镜的结构变化中被透镜表面内部反射而提高光提取效率表面。

6. 发明授权

US08253154B2 Lens for light emitting diode package 有权
标题翻译：镜头用于发光二极管封装
公开(公告)号：US08253154B2
公开(公告)日：2012-08-28
申请号：US12607694
申请日：2009-10-28
申请人： Soo Jin Jung , Joong Kon Son , Gwan Su Lee
发明人： Soo Jin Jung , Joong Kon Son , Gwan Su Lee
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/24 , H01L31/0203
CPC分类号： H01L33/58 , G02B19/0028 , G02B19/0061 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.
摘要翻译：用于发光二极管封装的透镜和具有该透镜的发光二极管封装具有简单的结构并且通过防止从发光二极管芯片发出的光在透镜的结构变化中被透镜表面内部反射而提高光提取效率表面。

7. 发明申请

US20090087994A1 METHOD OF FORMING FINE PATTERNS AND MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME 有权
标题翻译：形成精细图案的方法和使用其制造半导体发光器件
公开(公告)号：US20090087994A1
公开(公告)日：2009-04-02
申请号：US12239122
申请日：2008-09-26
申请人： Jong Ho LEE , Moo Youn Park , Soo Ryong Hwang , Il Hyung Jung , Gwan Su Lee , Jin Ha Kim
发明人： Jong Ho LEE , Moo Youn Park , Soo Ryong Hwang , Il Hyung Jung , Gwan Su Lee , Jin Ha Kim
IPC分类号： H01L21/302
CPC分类号： H01L33/20 , H01L21/30617 , H01L21/30621 , H01L21/3083 , H01L33/22 , H01L33/382
摘要： A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.
摘要翻译：形成精细图案的方法开始于提供c面六边形半导体晶体。在半导体晶体上形成具有预定图案的掩模。通过使用掩模对半导体晶体进行干蚀刻以在半导体晶体上形成第一精细图案。包括第一精细图案的半导体晶体被湿蚀刻以在第一精细图案沿水平方向扩展以形成第二精细图案。在半导体晶体的湿式蚀刻中获得的第二精细图案分别具有独特的晶面的底面和侧壁。本发明的精细图案形成方法可以有利地应用于半导体发光器件，特别是应用于具有精细图案所需的语音晶体结构或使用表面等离子体共振原理的结构。

8. 发明授权

US08080480B2 Method of forming fine patterns and manufacturing semiconductor light emitting device using the same 有权
标题翻译：形成精细图案的方法和制造使用其的半导体发光器件
公开(公告)号：US08080480B2
公开(公告)日：2011-12-20
申请号：US12239122
申请日：2008-09-26
申请人： Jong Ho Lee , Moo Youn Park , Soo Ryong Hwang , Il Hyung Jung , Gwan Su Lee , Jin Ha Kim
发明人： Jong Ho Lee , Moo Youn Park , Soo Ryong Hwang , Il Hyung Jung , Gwan Su Lee , Jin Ha Kim
IPC分类号： H01L21/302
CPC分类号： H01L33/20 , H01L21/30617 , H01L21/30621 , H01L21/3083 , H01L33/22 , H01L33/382
摘要： A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.
摘要翻译：形成精细图案的方法开始于提供c面六边形半导体晶体。在半导体晶体上形成具有预定图案的掩模。通过使用掩模对半导体晶体进行干蚀刻以在半导体晶体上形成第一精细图案。包括第一精细图案的半导体晶体被湿蚀刻以在第一精细图案沿水平方向扩展以形成第二精细图案。在半导体晶体的湿式蚀刻中获得的第二精细图案分别具有独特的晶面的底面和侧壁。本发明的精细图案形成方法可以有利地应用于半导体发光器件，特别是应用于具有精细图案所需的语音晶体结构或使用表面等离子体共振原理的结构。

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