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1. 发明申请

US20120318457A1 MATERIALS AND COATINGS FOR A SHOWERHEAD IN A PROCESSING SYSTEM 审中-公开
标题翻译：加工系统中的淋浴材料和涂层
公开(公告)号：US20120318457A1
公开(公告)日：2012-12-20
申请号：US13525203
申请日：2012-06-15
申请人： Son Nguyen , Donald Olgado , Yuriy Melnik
发明人： Son Nguyen , Donald Olgado , Yuriy Melnik
IPC分类号： B05B1/18 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/4404 , C30B25/14 , C30B29/403
摘要： Apparatus and systems are disclosed for providing a protective material for a showerhead of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a showerhead having a diffuser plate for distributing processing gases to the processing chamber. The diffuser plate may include a protective material to protect the showerhead from processing gases. The diffuser plate may be formed with tungsten or tungsten coated with a tantalum alloy and tantalum.
摘要翻译：公开了用于提供用于处理系统的喷头的保护材料的装置和系统。在一个实施例中，处理系统包括用于处理基板的处理室和具有用于将处理气体分配到处理室的扩散板的喷头。漫射板可以包括保护材料以保护喷头免于处理气体。漫射板可以由涂有钽合金和钽的钨或钨形成。

2. 发明授权

US08853086B2 Methods for pretreatment of group III-nitride depositions 有权
标题翻译： Ⅲ型氮化物沉积预处理方法
公开(公告)号：US08853086B2
公开(公告)日：2014-10-07
申请号：US13469048
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： H01L21/311 , H01L21/02 , H01L33/00
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).
摘要翻译：本公开的实施例涉及用于制造诸如发光二极管（LED），激光二极管（LD）或功率电子器件的器件的衬底和III族氮化物层的预处理的方法。本公开的一个实施方案提供了一种方法，包括在处理室中提供具有含铝表面的一个或多个基材，并将具有含铝表面的一个或多个基材中的每一个的表面暴露于预处理气体混合物以形成预处理表面。预处理气体混合物包括氨（NH 3），卤化铝气体（例如AlCl 3，AlCl）和含有卤素气体（例如Cl 2）或卤化氢气体（例如HCl）的含蚀刻剂的气体。

3. 发明申请

US20110263111A1 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：US20110263111A1
公开(公告)日：2011-10-27
申请号：US13071215
申请日：2011-03-24
申请人： Yuriy Melnik , Olga Kryliouk , Lu Chen , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Yuriy Melnik , Olga Kryliouk , Lu Chen , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/22 , C30B35/00 , C23C16/44 , C23C16/34 , C23C16/455
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： Group III-nitride N-type doping techniques are described.
摘要翻译：描述了III族氮化物N型掺杂技术。

4. 发明申请

US20080314311A1 HVPE SHOWERHEAD DESIGN 审中-公开
标题翻译： HVPE淋浴设计
公开(公告)号：US20080314311A1
公开(公告)日：2008-12-25
申请号：US11767520
申请日：2007-06-24
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
IPC分类号： C30B25/14 , C23C16/34
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

5. 发明授权

US08980002B2 Methods for improved growth of group III nitride semiconductor compounds 有权
标题翻译：改善III族氮化物半导体化合物生长的方法
公开(公告)号：US08980002B2
公开(公告)日：2015-03-17
申请号：US13469045
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： C30B25/14 , C30B25/18 , C30B25/02 , C30B29/40
CPC分类号： C30B25/14 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406
摘要： Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.
摘要翻译：公开了采用先进缓冲层技术生长III族氮化物半导体化合物的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中提供合适的衬底。该方法包括通过使氨气流入处理室的生长区而形成AlN缓冲层，将含卤化铝的前体流过生长区，同时将另外的卤化氢或卤素气体流入生长区的生长区处理室。在缓冲层沉积期间流入生长区的附加卤化氢或卤素气体抑制均匀的AlN颗粒形成。卤化氢或卤素气体可以持续流动一段时间，同时关闭含卤化铝的前体的流动。

6. 发明申请

US20130098455A1 MULTIPLE COMPLEMENTARY GAS DISTRIBUTION ASSEMBLIES 有权
标题翻译：多个补充气体分配组件
公开(公告)号：US20130098455A1
公开(公告)日：2013-04-25
申请号：US13649488
申请日：2012-10-11
申请人： Tuoh-Bin Ng , Yuriy Melnik , Lily L. Pang , Eda Tuncel , Lu Chen , Son T. Nguyen
发明人： Tuoh-Bin Ng , Yuriy Melnik , Lily L. Pang , Eda Tuncel , Lu Chen , Son T. Nguyen
IPC分类号： C23C16/455
CPC分类号： C23C16/303 , C23C16/4488 , C23C16/45574 , C23C16/4558 , Y10T137/0318 , Y10T137/8593
摘要： Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.
摘要翻译：这里描述了具有根据一个实施例的多个气体分配组件的示例性装置。在一个实施例中，该装置包括两个或更多个气体分配组件。每个气体分配组件都具有孔口，至少一个处理气体通过孔口被引入处理室。两个或更多个气体分配组件可被设计成具有互补的特征径向膜生长速率曲线。

7. 发明申请

US20100273318A1 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 失效
标题翻译：用于后续高温组III沉积物的基板预处理
公开(公告)号：US20100273318A1
公开(公告)日：2010-10-28
申请号：US12766779
申请日：2010-04-23
申请人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

8. 发明申请

US20100261340A1 CLUSTER TOOL FOR LEDS 有权
标题翻译： LED集群工具
公开(公告)号：US20100261340A1
公开(公告)日：2010-10-14
申请号：US12751692
申请日：2010-03-31
申请人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/205
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

9. 发明授权

US08507304B2 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) 有权
标题翻译：通过氢化物气相外延（HVPE）在图案化衬底上形成III族氮化物晶体膜的方法
公开(公告)号：US08507304B2
公开(公告)日：2013-08-13
申请号：US12837390
申请日：2010-07-15
申请人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高品质低缺陷单晶III-III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积III-III族氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的重力位错。

10. 外观设计

USD664172S1 Dome assembly for a deposition chamber 有权
标题翻译：用于沉积室的圆顶组件
公开(公告)号：USD664172S1
公开(公告)日：2012-07-24
申请号：US29350406
申请日：2009-11-16
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
设计人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang

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