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1. 发明申请

US20110263111A1 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：US20110263111A1
公开(公告)日：2011-10-27
申请号：US13071215
申请日：2011-03-24
申请人： Yuriy Melnik , Olga Kryliouk , Lu Chen , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Yuriy Melnik , Olga Kryliouk , Lu Chen , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/22 , C30B35/00 , C23C16/44 , C23C16/34 , C23C16/455
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： Group III-nitride N-type doping techniques are described.
摘要翻译：描述了III族氮化物N型掺杂技术。

2. 发明申请

US20120235116A1 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
标题翻译：具有增强量子效率的发光二极管和制造方法
公开(公告)号：US20120235116A1
公开(公告)日：2012-09-20
申请号：US13387713
申请日：2010-07-30
申请人： Jie Su , Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Lu Chen , Tetsuya Ishikawa
发明人： Jie Su , Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Lu Chen , Tetsuya Ishikawa
IPC分类号： H01L33/04 , C30B25/02 , H01B1/02 , C30B25/08
CPC分类号： H01L33/06 , H01L33/04 , H01L33/325
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.
摘要翻译：量子阱结构的一个实施例包括有源区，包括有源层，其包括量子阱和阻挡层，其中一些或全部有源层是p型掺杂的。通过将PN结的位置定位在器件的有源区域中，P型掺杂部分或全部有源层提高了III-V族化合物半导体发光二极管的量子效率，从而能够在主动区域内发生主要的辐射复合。在一个实施例中，量子阱结构在具有共晶源合金的氢化物气相外延（HVPE）沉积室的簇工具中制造。在一个实施例中，氮化铟镓（InGaN）层和掺杂镁的氮化镓（Mg-GaN）或镁掺杂的氮化铝镓（Mg-AlGaN）层通过簇工具在分开的室中生长以避免铟和镁的交叉污染。还描述了使用III族金属共晶体通过氢化物气相外延掺杂的III族氮化物。在一个实施例中，提供了用于HVPE沉积p型或n型III族氮化物外延膜的源，该源包括具有III族的液相机械（共晶）混合物。在一个实施例中，提供了一种用于执行p型或n型III族氮化物外延膜的HVPE沉积的方法，该方法包括使用具有III族物质的液相机械（共晶）混合物。

3. 发明授权

US09431477B2 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) 有权
公开(公告)号：US09431477B2
公开(公告)日：2016-08-30
申请号：US13959469
申请日：2013-08-05
申请人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L29/04 , H01L21/02 , H01L33/00 , H01L33/12 , H01L33/16 , H01L33/22
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.

4. 发明申请

US20100279020A1 METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE 审中-公开
标题翻译：在HVPE中形成原位前置GaN沉积层的方法
公开(公告)号：US20100279020A1
公开(公告)日：2010-11-04
申请号：US12770306
申请日：2010-04-29
申请人： Yuriy Melnik , Hidehiro Kojiri , Olga Kryliouk , Tetsuya Ishikawa
发明人： Yuriy Melnik , Hidehiro Kojiri , Olga Kryliouk , Tetsuya Ishikawa
IPC分类号： B05D1/36
CPC分类号： C23C16/4488 , C23C16/303 , C23C16/45523 , C30B25/02 , C30B29/403
摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
摘要翻译：提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。非晶层可以通过热处理部分或完全重结晶。代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

5. 发明授权

US08507304B2 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) 有权
标题翻译：通过氢化物气相外延（HVPE）在图案化衬底上形成III族氮化物晶体膜的方法
公开(公告)号：US08507304B2
公开(公告)日：2013-08-13
申请号：US12837390
申请日：2010-07-15
申请人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高品质低缺陷单晶III-III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积III-III族氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的重力位错。

6. 发明申请

US20110140071A1 NANO-SPHERICAL GROUP III-NITRIDE MATERIALS 审中-公开
公开(公告)号：US20110140071A1
公开(公告)日：2011-06-16
申请号：US12967970
申请日：2010-12-14
申请人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： C30B25/00 , B82Y30/00 , B82Y40/00 , C30B29/403 , C30B29/60 , H01L33/20
摘要： Nano-spherical group III-nitride materials and methods of forming nano-spherical group III-nitride materials are described. Also described is a 1-dimensional LED or similar device formed from a single nano-rod of a nano-spherical group III-nitride material.
摘要翻译：描述了纳米球III族氮化物材料和形成纳米球III族氮化物材料的方法。还描述了由纳米球III族氮化物材料的单个纳米棒形成的一维LED或类似装置。

7. 发明申请

US20110012109A1 METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 有权
标题翻译：通过氢化钙相层析（HVPE）在形成图案的基底上形成III族氮化物膜的方法
公开(公告)号：US20110012109A1
公开(公告)日：2011-01-20
申请号：US12837390
申请日：2010-07-15
申请人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高品质低缺陷单晶III-III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积III-III族氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的重力位错。

8. 发明申请

US20100273318A1 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 失效
标题翻译：用于后续高温组III沉积物的基板预处理
公开(公告)号：US20100273318A1
公开(公告)日：2010-10-28
申请号：US12766779
申请日：2010-04-23
申请人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

9. 发明授权

US08138069B2 Substrate pretreatment for subsequent high temperature group III depositions 失效
标题翻译：用于后续高温组III沉积的底物预处理
公开(公告)号：US08138069B2
公开(公告)日：2012-03-20
申请号：US12766779
申请日：2010-04-23
申请人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

10. 发明申请

US20100261340A1 CLUSTER TOOL FOR LEDS 有权
标题翻译： LED集群工具
公开(公告)号：US20100261340A1
公开(公告)日：2010-10-14
申请号：US12751692
申请日：2010-03-31
申请人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/205
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

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