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1. 发明授权

EP1631984B1 PROCÉDÉ D'OBTENTION D 'UNE STRUCTURE COMPRENANT UN SUBSTRAT SUPPORT ET UNE COUCHE ULTRAMINCE 有权转让
标题翻译： PROCÉDÉD'OBTENTION D'UNE STRUCTURE COMPRENANT UN SUBSTRAT SUPPORT ET UNE COUCHE ULTRAMINCE
公开(公告)号：EP1631984B1
公开(公告)日：2017-08-23
申请号：EP04767238.1
申请日：2004-06-03
申请人： Soitec , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： AULNETTE, Cécile , BATAILLOU, Benoît , GHYSELEN, Bruno , MORICEAU, Hubert
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/76259

2. 发明申请

WO2014154769A1 ADVANCED CPV SOLAR CELL ASSEMBLY PROCESS 审中-公开
标题翻译：先进的CPV太阳能电池组件工艺
公开(公告)号：WO2014154769A1
公开(公告)日：2014-10-02
申请号：PCT/EP2014/056094
申请日：2014-03-26
申请人： SOITEC , FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
发明人： AULNETTE, Cécile , KRAUSE, Rainer , DIMROTH, Frank , GRAVE, Matthias , GUIOT, Eric , MAZALEYRAT, Eric , DRAZEK, Charlotte
IPC分类号： H01L27/142 , H01L31/0304 , H01L31/052 , H01L31/0687 , H01L31/02
CPC分类号： H01L31/0443 , H01L27/1421 , H01L31/028 , H01L31/052 , H01L31/054 , H01L31/0687 , H01L31/0693 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a solar cell assembly structure (222), for supporting a concentrator photovoltaic cell structure (3420), comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region (2800), at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region (2200), for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.
摘要翻译：本发明涉及一种太阳能电池组件结构（222），用于支撑包括半导体结构和二极管的集中器光伏电池结构（3420），其中半导体结构包括第一半导体区域（2800），至少一部分用于放置聚光器光伏电池结构的第二半导体区域和用于在第二半导体区域内或上的第二半导体区域实现二极管的第二半导体区域（2200），并且其中第一半导体区域的用于放置集中器光伏电池结构和第二半导体区域区域不垂直重叠。

3. 发明申请

WO2017134064A1 ENGINEERED SUBSTRATE 审中-公开
标题翻译：工程基板
公开(公告)号：WO2017134064A1
公开(公告)日：2017-08-10
申请号：PCT/EP2017/052080
申请日：2017-02-01
申请人： SOITEC
发明人： AULNETTE, Cécile , DIMROTH, Frank , OLIVA, Eduard
IPC分类号： H01L21/18 , H01L31/0304 , H01L31/18
CPC分类号： H01L21/187 , H01L31/0304 , H01L31/184
摘要： Engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 m Ohm·cm², preferentially below 1 m Ohm·cm²; and wherein doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferentially less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 m Ohm·cm², preferentially less than m Ohm·cm². 1
摘要翻译：工程衬底，包括：由用于太阳能电池生长的第一半导体材料制成的晶种层; 支撑衬底，其包括基底和在所述基底的第一侧上外延生长的表面层，所述基底和所述表面层由第二半导体材料制成; 种子层和表面层之间的直接结合界面; 其中所述表面层的掺杂浓度高于预定值，使得在所述直接结合界面处的电阻率低于10mΩcm-2，优选低于1mΩcm2。并且其中基体的掺杂浓度以及工程衬底的厚度使得工程衬底的吸收小于20％，优选小于10％，并且工程衬底的总面积归一化串联电阻小于 10米欧姆厘米厘米，优选小于米欧姆厘米厘米。 1

4. 发明申请

WO2014154767A1 MULTIPLE TRANSFER ASSEMBLY PROCESS 审中-公开
标题翻译：多传输组装流程
公开(公告)号：WO2014154767A1
公开(公告)日：2014-10-02
申请号：PCT/EP2014/056089
申请日：2014-03-26
申请人： SOITEC , FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
发明人： KRAUSE, Rainer , AULNETTE, Cécile , MAZALEYRAT, Eric , DIMROTH, Frank , GUIOT, Eric
IPC分类号： H01L31/18
CPC分类号： H01L33/0079 , H01L21/67092 , H01L21/6835 , H01L21/6836 , H01L21/76251 , H01L21/76254 , H01L21/76275 , H01L31/02008 , H01L31/024 , H01L31/028 , H01L31/0304 , H01L31/047 , H01L31/1876 , H01L31/1892 , H01L2221/68345 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2221/68386 , H01L2223/54426 , Y02E10/50 , Y02P70/521
摘要： The present invention related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells (8121-8124), placed at a first distance from each other; attaching a stretching material (1150) to the plurality of photovoltaic cells; and stretching (S61) the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.
摘要翻译：本发明涉及多个光伏电池的制造方法，包括以下步骤：获得彼此相距第一距离的多个光伏电池（8121-8124）; 将拉伸材料（1150）附接到所述多个光伏电池; 以及拉伸（S61）所述拉伸材料，使得所述多个光伏电池彼此之间产生第二距离，其中所述第二距离大于所述第一距离。

5. 发明授权

EP1588415B1 RECYCLING BY MECHANICAL MEANS OF A WAFER COMPRISING A TAKING-OFF STRUCTURE AFTER TAKING-OFF A THIN LAYER THEREOF 有权转让
标题翻译：回收与ABNEHMESTRUKTUR晶片的机械手段后，除去IT薄薄的一层
公开(公告)号：EP1588415B1
公开(公告)日：2012-11-28
申请号：EP04700490.8
申请日：2004-01-07
申请人： Soitec
发明人： GHYSELEN, Bruno , AULNETTE, Cécile , OSTERNAUD, Bénédicte , AKATSU, Takeshi , FAURE, Bruce
IPC分类号： H01L21/762 , H01L21/02
CPC分类号： H01L21/02032 , H01L21/76254

6. 发明公开

EP3411898A1 ENGINEERED SUBSTRATE 有权
公开(公告)号：EP3411898A1
公开(公告)日：2018-12-12
申请号：EP17703365.1
申请日：2017-02-01
申请人： Soitec
发明人： AULNETTE, Cécile , DIMROTH, Frank , OLIVA, Eduard
IPC分类号： H01L21/18 , H01L31/0304 , H01L31/18
CPC分类号： H01L21/187 , H01L31/056 , H01L31/0735 , H01L31/184 , H01L31/1896
摘要： Engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 m Ohm·cm², preferentially below 1 m Ohm·cm²; and wherein doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferentially less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 m Ohm·cm², preferentially less than m Ohm·cm². 1

7. 发明授权

EP2979300B1 ADVANCED CPV SOLAR CELL ASSEMBLY PROCESS 有权
公开(公告)号：EP2979300B1
公开(公告)日：2019-05-22
申请号：EP14713102.3
申请日：2014-03-26
申请人： Soitec , Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： AULNETTE, Cécile , KRAUSE, Rainer , DIMROTH, Frank , GUIOT, Eric , MAZALEYRAT, Eric , DRAZEK, Charlotte
IPC分类号： H01L27/142 , H01L31/0304 , H01L31/052 , H01L31/0687 , H01L31/02

8. 发明公开

EP2979300A1 ADVANCED CPV SOLAR CELL ASSEMBLY PROCESS 有权
标题翻译： ERVEITERTES CPV-SOLARZELLENANORDNUNGSVERFAHREN
公开(公告)号：EP2979300A1
公开(公告)日：2016-02-03
申请号：EP14713102.3
申请日：2014-03-26
申请人： Soitec , Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： AULNETTE, Cécile , KRAUSE, Rainer , DIMROTH, Frank , GRAVE, Matthias , GUIOT, Eric , MAZALEYRAT, Eric , DRAZEK, Charlotte
IPC分类号： H01L27/142 , H01L31/0304 , H01L31/052 , H01L31/0687 , H01L31/02
CPC分类号： H01L31/0443 , H01L27/1421 , H01L31/028 , H01L31/052 , H01L31/054 , H01L31/0687 , H01L31/0693 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell structure (3420), comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.
摘要翻译：本公开涉及一种用于支持聚光器光伏电池结构（3420）的太阳能电池组件结构，其包括半导体结构和二极管，其中所述半导体结构包括第一半导体区域，其至少一部分用于将集中器光伏电池结构以及用于在第二半导体区域内或上在第二半导体区域上实现二极管的第二半导体区域，并且其中用于放置集中器光伏电池结构和第二半导体区域的第一半导体区域的部分不是垂直重叠的。

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