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1. 发明申请

US20220157650A1 METHOD FOR TRANSFERRING A USE FUL LAYER TO A CARRIER SUBSTRATE 有权
公开(公告)号：US20220157650A1
公开(公告)日：2022-05-19
申请号：US17435631
申请日：2020-02-26
申请人： Soitec
发明人： Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed
IPC分类号： H01L21/762
摘要： A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.

2. 发明申请

US20210050249A1 REMOVABLE STRUCTURE AND REMOVAL METHOD USING THE STRUCTURE 有权
公开(公告)号：US20210050249A1
公开(公告)日：2021-02-18
申请号：US16969346
申请日：2019-01-14
申请人： Soitec
发明人： Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed , Rénald Guerin , Norbert Colombet
IPC分类号： H01L21/762
摘要： A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

3. 发明授权

US09887124B2 Method for producing a composite structure 有权
公开(公告)号：US09887124B2
公开(公告)日：2018-02-06
申请号：US14900257
申请日：2014-06-17
申请人： Soitec
发明人： Nadia Ben Mohamed , Eric Maze
IPC分类号： H01L21/30 , H01L21/46 , H01L21/42 , H01L21/00 , H01L21/762 , H01L21/02 , H01L21/306
CPC分类号： H01L21/76254 , H01L21/02236 , H01L21/30604
摘要： A process for the manufacture of a composite structure includes the following stages: a) providing a donor substrate comprising a first surface and a support substrate; b) forming a zone of weakening in the donor substrate, the zone of weakening delimiting, with the first surface of the donor substrate, a working layer; c) assembling the support substrate and the donor substrate; d) fracturing the donor substrate along the zone of weakening; and e) thinning the working layer so as to form a thinned working layer. Stage b) is carried out so that the working layer exhibits a thickness profile appropriate for compensating for the nonuniformity in consumption of the working layer during stage e).

4. 发明申请

US20150050797A1 METHOD OF IMPLANTATION FOR FRAGILIZATION OF SUBSTRATES 有权
标题翻译：用于基底层析的植入方法
公开(公告)号：US20150050797A1
公开(公告)日：2015-02-19
申请号：US14386937
申请日：2013-03-14
申请人： Soitec
发明人： Nadia Ben Mohamed , Carole David , Camille Rigal
IPC分类号： H01L21/762 , H01L21/265
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/2007 , H01L21/26506 , H01L21/26586 , H01L21/76251 , H01L21/76259
摘要： The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.
摘要翻译：本发明涉及一种用于将原子或离子物质注入由半导体材料制成的一批衬底中的方法，其中：由半导体材料制成的每个衬底位于批量注入机的相应支撑件上，每个衬底包括薄层表面电绝缘子; 并且在衬底的整个表面上通过它们的绝缘体层注入至少一种离子或原子物质的剂量，以在每个衬底内形成脆性区域，并在其之间形成薄层半导体材料绝缘体层和基板的脆性区域，该注入方法的特征在于，在该方法期间，其上定位有基板的每个支撑件具有至少两个相对于垂直于植入方向的平面的独立倾斜物种以提高物质在基质中的植入深度。本公开还涉及通过实施注入方法获得的绝缘体上半导体类型的结构。

5. 发明授权

US12100727B2 Method for manufacturing a substrate for a front-facing image sensor 有权
公开(公告)号：US12100727B2
公开(公告)日：2024-09-24
申请号：US17418148
申请日：2019-12-23
申请人： Soitec
发明人： Walter Schwarzenbach , Ludovic Ecarnot , Damien Massy , Nadia Ben Mohamed , Nicolas Daval , Christophe Girard , Christophe Maleville
IPC分类号： H01L27/146 , H01L21/265 , H01L21/322 , H01L21/762 , H01L31/18
CPC分类号： H01L27/14683 , H01L21/26506 , H01L21/3223 , H01L21/3226 , H01L21/76254 , H01L27/1463 , H01L31/1892
摘要： A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

6. 发明授权

US12002697B2 Method for detecting the splitting of a substrate weakened by implanting atomic species 有权
公开(公告)号：US12002697B2
公开(公告)日：2024-06-04
申请号：US17042755
申请日：2019-03-22
申请人： Soitec , Commissariat A L'Energie Atomique et aux Énergies Alternatives
发明人： François Rieutord , Frédéric Mazen , Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed
IPC分类号： H01L21/67 , G01N29/14 , G01N29/46 , H01L21/66
CPC分类号： H01L21/67288 , G01N29/14 , G01N29/46 , H01L21/67109 , H01L22/12 , G01N2291/2697
摘要： A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

7. 发明公开

US20240030060A1 METHOD FOR PREPARING A THIN LAYER 审中-公开
公开(公告)号：US20240030060A1
公开(公告)日：2024-01-25
申请号：US17907243
申请日：2021-01-19
申请人： Soitec , Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
发明人： Frédéric Mazen , François Rieutord , Marianne Coig , Helen Grampeix , Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed
IPC分类号： H01L21/762 , H01L21/324
CPC分类号： H01L21/76254 , H01L21/3247
摘要： A method for preparing a thin layer comprises a weakening step for forming a weakened zone in a central portion of a donor substrate, the weakened zone not extending into a peripheral portion of the donor substrate; a step of joining the main face of the donor substrate to a receiver substrate to form an assembly to be split; and a step of separating the assembly to be split, the separating step comprising a heat treatment resulting in the freeing of the thin layer from the donor substrate at the central portion thereof only. The method also comprises, after the separating step, a detaching step comprising the treating of the assembly to be split in order to detach the peripheral portion of the donor substrate from the receiver substrate.

8. 发明授权

US11114314B2 Method for fabrication of a semiconductor structure including an interposer free from any through via 有权
公开(公告)号：US11114314B2
公开(公告)日：2021-09-07
申请号：US16305695
申请日：2017-05-24
申请人： Soitec
发明人： Bich-Yen Nguyen , Ludovic Ecarnot , Nadia Ben Mohamed , Christophe Malville
IPC分类号： H01L21/56 , H01L21/48 , H01L21/78
摘要： A method of forming a semiconductor structure includes introducing, at selected conditions, hydrogen and helium species (e.g., ions) in a temporary support to form a plane of weakness at a predetermined depth therein, and to define a superficial layer and a residual part of the temporary support; forming on the temporary support an interconnection layer; placing at least one semiconductor chip on the interconnection layer; assembling a stiffener on a back side of the at least one semiconductor chip; and providing thermal energy to the temporary support to detach the residual part and provide the semiconductor structure. The interconnection layer forms an interposer free from any through via.

9. 发明授权

US09922867B2 Method for transferring a useful layer 有权
公开(公告)号：US09922867B2
公开(公告)日：2018-03-20
申请号：US15018465
申请日：2016-02-08
申请人： Soitec
发明人： Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed
IPC分类号： H01L21/324 , H01L21/762 , H01L21/265
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/324
摘要： A method for transferring a useful layer onto a carrier substrate comprises formation of an embrittlement plane by implantation of light species into a first substrate in such a manner as to define the bounds of a useful layer between the plane and a surface of the first substrate, mounting of the carrier substrate onto a surface of the first substrate so as to form an assembly to be fractured, and thermal fracture treatment of the first substrate along the embrittlement plane in such a manner as to transfer the useful layer onto a support. During the thermal fracture treatment, the degree of peripheral adhesion is reduced at an interface between the carrier substrate and the first substrate.

10. 发明授权

US09589830B2 Method for transferring a useful layer 有权
标题翻译：转移有用层的方法
公开(公告)号：US09589830B2
公开(公告)日：2017-03-07
申请号：US14686229
申请日：2015-04-14
申请人： Soitec , Commissariat A L'Energie Atomique et aux Energies Alternatives
发明人： Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed , Damien Massy , Frederic Mazen , Francois Rieutord
IPC分类号： H01L21/762 , H01L21/683
CPC分类号： H01L21/76254 , H01L21/6835 , H01L2221/68363 , H01L2221/68381
摘要： A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.
摘要翻译：用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

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