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1. 发明授权

US5192717A Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method 失效
标题翻译：通过微波等离子体化学气相沉积法形成多晶半导体膜的工艺
公开(公告)号：US5192717A
公开(公告)日：1993-03-09
申请号：US799900
申请日：1991-12-02
申请人： Soichiro Kawakami , Masahiro Kanai , Takeshi Aoki
发明人： Soichiro Kawakami , Masahiro Kanai , Takeshi Aoki
IPC分类号： H01L21/205
CPC分类号： H01L21/02422 , H01L21/02521 , H01L21/02532 , H01L21/0262 , Y10S148/122
摘要： A process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature.
摘要翻译：一种用于在绝缘基板上形成高质量多晶半导体膜的方法，其包括使用包括具有微波引入装置的等离子体产生室和通过格栅电极连接到所述等离子体产生室的成膜室的MW-PCVD装置，所述成膜室包含位于由导电材料制成的衬底保持器上的所述绝缘衬底，其安装在其中，通过使成膜原料气体与通过所述微波引入装置在所述等离子体产生室中施加的微波能量接触而产生等离子体;以及将所述等离子体引入所述成膜室，同时在所述栅电极和所述衬底保持器之间施加频率范围为20-500MHz的高频电压，从而在所述绝缘衬底上形成所述多晶半导体膜保持在期望的温度。

2. 发明授权

US5002618A Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film 失效
标题翻译：引脚异质结光电元件与多晶BAs（H，F）半导体膜
公开(公告)号：US5002618A
公开(公告)日：1991-03-26
申请号：US467525
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L21/205 , H01L31/0304 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L21/0237 , H01L21/02425 , H01L21/0245 , H01L21/02461 , H01L21/02532 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0304 , H01L31/03042 , H01L31/075 , H01L31/184 , H01L31/20 , Y02E10/544 , Y02E10/548
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of boron atoms (B), arsenic atoms (As), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 6 atomic %; said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种层包括由硼原子（B），砷原子（As），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜，所述多晶半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜6原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种选自氢原子（H）和氟原子（F）的原子。

3. 发明授权

US5024706A Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film 失效
标题翻译：引脚异质结光电元件与多晶AlP（H，F）半导体膜
公开(公告)号：US5024706A
公开(公告)日：1991-06-18
申请号：US467523
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0304 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L21/0237 , H01L21/02425 , H01L21/0245 , H01L21/02461 , H01L21/02532 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0304 , H01L31/03042 , H01L31/075 , H01L31/184 , H01L31/20 , Y02E10/544 , Y02E10/548
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; said i-type comprises a either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种层包括由铝原子（Al），磷原子（P），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜，所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子，或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种的选自氢原子（H）和氟原子（F）的原子。

4. 发明授权

US5006180A Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film 失效
标题翻译：引脚异质结光电元件与多晶GaP（H，F）半导体膜
公开(公告)号：US5006180A
公开(公告)日：1991-04-09
申请号：US467538
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0368 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L21/0237 , H01L21/02425 , H01L21/0245 , H01L21/02461 , H01L21/02532 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0368 , H01L31/075 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of gallium atoms (Ga), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; and said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种层包括由p型或n型掺杂元素的镓原子（Ga），磷原子（P），氢原子（H），任选的氟原子（F）和原子（M）组成的多晶半导体膜，所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 并且所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子，或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种的选自氢原子（H）和氟原子（F）的原子。

5. 发明授权

US4908329A Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process 失效
标题翻译：通过微波等离子体化学气相沉积工艺形成含有II和VI族原子的功能沉积膜的方法
公开(公告)号：US4908329A
公开(公告)日：1990-03-13
申请号：US302243
申请日：1989-01-27
申请人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
发明人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
IPC分类号： C23C16/50 , C23C16/30 , C23C16/452 , C23C16/511 , C30B25/10 , H01L21/365
CPC分类号： C30B25/105 , C23C16/306 , C23C16/452 , C30B29/48 , H01L21/02422 , H01L21/02551 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/0262 , Y10S148/045 , Y10S148/064
摘要： A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group II compound (1) and a group VI compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in an excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atom is controlled.

6. 发明授权

US5038713A Microwave plasma treating apparatus 失效
标题翻译：微波等离子体处理装置
公开(公告)号：US5038713A
公开(公告)日：1991-08-13
申请号：US354856
申请日：1989-05-22
申请人： Soichiro Kawakami , Masahiro Kanai , Takayoshi Arai , Tsutomu Murakami
发明人： Soichiro Kawakami , Masahiro Kanai , Takayoshi Arai , Tsutomu Murakami
IPC分类号： B01J19/08 , C23C16/27 , C23C16/50 , C23C16/511 , C23F4/00 , C30B29/04 , H01J37/32 , H01L21/205 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32357 , H05H1/46
摘要： A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outside of the cavity resonator to prepare a region of a great magnetic flux density in the discharging space at the inside of the cavity resonator.

7. 发明授权

US4908330A Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process 失效
标题翻译：通过微波等离子体化学气相沉积法形成含有IV族原子或硅原子和IV族原子的功能沉积膜的工艺
公开(公告)号：US4908330A
公开(公告)日：1990-03-13
申请号：US302245
申请日：1989-01-27
申请人： Takayoshi Arai , Masahiro Kanai , Soichiro Kawakami , Tsutomu Murakami
发明人： Takayoshi Arai , Masahiro Kanai , Soichiro Kawakami , Tsutomu Murakami
IPC分类号： C23C16/452 , C23C16/511 , C23C16/52
CPC分类号： C23C16/511 , C23C16/452 , C23C16/52
摘要： A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled.

8. 发明授权

US5007971A Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film 失效
标题翻译： pin异质结光电元件与多晶BP（H，F）半导体膜
公开(公告)号：US5007971A
公开(公告)日：1991-04-16
申请号：US467537
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L21/205 , H01L31/0304 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L21/0237 , H01L21/02425 , H01L21/0245 , H01L21/02461 , H01L21/02532 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0304 , H01L31/03042 , H01L31/075 , H01L31/184 , H01L31/20 , Y02E10/544 , Y02E10/548
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of boron atoms (B), phosphorus atoms (P), hydrogen atoms (H) optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 7 atomic %; and i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种通过p型半导体层，i型半导体层和n型半导体层的结合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体层中的至少一种包括由硼原子（B），磷原子（P），氢原子（H）任选氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜，所述多晶体半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜7原子％的氢原子（H）; 和i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种选自氢原子（H）和氟原子（F）的原子。

9. 发明授权

US5002617A Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film 失效
标题翻译：引脚异质结光电元件与多晶AlAs（H，F）半导体膜
公开(公告)号：US5002617A
公开(公告)日：1991-03-26
申请号：US467540
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L31/0304 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/03042 , H01L31/075 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02E10/548
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), arsenic atoms (As), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 7 atomic %; said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种层包括由铝原子（Al），砷原子（As），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜，所述多晶半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜7原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种选自氢原子（H）和氟原子（F）的原子。

10. 发明申请

US20130028825A1 MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT 审中-公开
标题翻译：多晶硅和多晶硅的制造方法
公开(公告)号：US20130028825A1
公开(公告)日：2013-01-31
申请号：US13636490
申请日：2011-03-25
申请人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
发明人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
IPC分类号： C03B5/23 , C01B33/02
CPC分类号： C01B33/02 , C01B33/037 , C30B11/006 , C30B28/06 , C30B29/06 , C30B35/002
摘要： A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X
摘要翻译：一种多晶硅锭的制造方法，其特征在于，包括：从所述硅熔体的底面单向上固化保持在坩埚中的硅熔体，其中，在侧壁的内表面和坩埚的底部，坩埚中的凝固过程被高分割成从0到X（10mm和nlE; X <30mm）的第一区域，从X到Y的第二区域（30mm＆amp; NlE; Y <100mm），Y以上的第三区域以坩埚的底部为基准，第一区域的固化率V1为10mm / h×nlE; V1＆lt; ll; 20mm / h，凝固率第二区域中的V2在1mm / h＆lt; lEE; V2＆nlE; 5mm / h的范围内。

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