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1. 发明申请

US20090002528A1 HIGH DYNAMIC RANGE SENSOR WITH BLOOMING DRAIN 有权
标题翻译：高动态范围传感器与浮动排水
公开(公告)号：US20090002528A1
公开(公告)日：2009-01-01
申请号：US11872521
申请日：2007-10-15
申请人： Sohei Manabe , Ashish Shah , Sasidhar Saladi , William Qian , Hidetoshi Nozaki , Nagaraja Satyadev , Hsin-Chih Dyson Tai , Howard M. Rhodes
发明人： Sohei Manabe , Ashish Shah , Sasidhar Saladi , William Qian , Hidetoshi Nozaki , Nagaraja Satyadev , Hsin-Chih Dyson Tai , Howard M. Rhodes
IPC分类号： H04N5/335 , H04N9/64 , H04N3/14
CPC分类号： H04N5/3592 , H04N5/2355 , H04N5/3535 , H04N5/35554 , H04N5/37457
摘要： An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.
摘要翻译：图像传感器在每个单位像素中具有至少两个光电二极管。通过为光电二极管选择不同的曝光时间来实现高动态范围。另外，开花减少。选择读出定时周期，使得短曝光时间光电二极管充当从长曝光时间光电二极管溢出的过量电荷的漏极。为了改善过剩电荷的排出，可以进一步选择光电二极管的布置，使得长曝光时间光电二极管通过短曝光时间光电二极管沿垂直和水平方向相邻。还可以提供微透镜阵列，其中光优先地耦合到长曝光时间光电二极管以提高灵敏度。

2. 发明授权

US07825966B2 High dynamic range sensor with blooming drain 有权
标题翻译：高动态范围传感器，带有开花排水
公开(公告)号：US07825966B2
公开(公告)日：2010-11-02
申请号：US11872521
申请日：2007-10-15
申请人： Sohei Manabe , Ashish Shah , Sasidhar Saladi , William Qian , Hidetoshi Nozaki , Nagaraja Satyadev , Hsin-Chih (Dyson) Tai , Howard M. Rhodes
发明人： Sohei Manabe , Ashish Shah , Sasidhar Saladi , William Qian , Hidetoshi Nozaki , Nagaraja Satyadev , Hsin-Chih (Dyson) Tai , Howard M. Rhodes
IPC分类号： H04N5/335
CPC分类号： H04N5/3592 , H04N5/2355 , H04N5/3535 , H04N5/35554 , H04N5/37457
摘要： An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.
摘要翻译：图像传感器在每个单位像素中具有至少两个光电二极管。通过为光电二极管选择不同的曝光时间来实现高动态范围。另外，开花减少。选择读出定时周期，使得短曝光时间光电二极管充当从长曝光时间光电二极管溢出的过量电荷的漏极。为了改善过剩电荷的排出，可以进一步选择光电二极管的布置，使得长曝光时间光电二极管通过短曝光时间光电二极管沿垂直和水平方向相邻。还可以提供微透镜阵列，其中光优先地耦合到长曝光时间光电二极管以提高灵敏度。

3. 发明申请

US20070018264A1 Optimized image sensor process and structure to improve blooming 审中-公开
标题翻译：优化图像传感器的工艺和结构，提高开花度
公开(公告)号：US20070018264A1
公开(公告)日：2007-01-25
申请号：US11210996
申请日：2005-08-24
申请人： Howard Rhodes , Hidetoshi Nozaki , Sohei Manabe , Hsin-chih Tai , Satyadev Nagaraja , Ashish Shah , William Qian , Hongli Yang , Tiejun Dai
发明人： Howard Rhodes , Hidetoshi Nozaki , Sohei Manabe , Hsin-chih Tai , Satyadev Nagaraja , Ashish Shah , William Qian , Hongli Yang , Tiejun Dai
IPC分类号： H01L31/0232
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14654
摘要： An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.
摘要翻译：公开了一种使用减少电串扰的像素之间的隔离结构的像素阵列的图像传感器。像素阵列形成在具有薄（小于5微米）外延层的衬底上。隔离结构使用深p阱来围绕浅沟槽隔离。使用典型地超过700keV的注入能量形成深p阱。

4. 发明申请

US20210205102A1 RECONFIGURABLE ELECTRICAL CIRCUIT FOR SUPPLYING INCREASED POWER FROM A SUPERCAPACITOR AND METHOD FOR USING THE SAME 有权
公开(公告)号：US20210205102A1
公开(公告)日：2021-07-08
申请号：US16733541
申请日：2020-01-03
申请人： Jamie Milliken , Ashish Shah
发明人： Jamie Milliken , Ashish Shah
IPC分类号： A61F2/66 , H02J7/00 , H02J7/34 , A61F2/70
摘要： Exemplary embodiments relate to techniques for supplying increased power to an augmentation device without increasing battery size. For example, the load may be a motor that provides augmentation power to a joint of a prosthetic ankle, and which is generally powered by a battery. A reconfigurable electrical circuit may connect a supercapacitor in series with the battery to boost the power from the battery at times when a pulse of increased power is demanded. For instance, states of one or more switches of the electrical circuit may be changed in order to briefly disconnect the motor from the circuit just prior to a powered plantarflexion phase of a gait cycle of the ankle, and then to reconnect the motor to a reconfigured circuit to provide a power boost. The circuit may also be reconfigured to allow the battery to recharge the supercapacitor during periods of nominal power demand.

5. 发明授权

US08166101B2 Systems and methods for the implementation of a synchronization schemas for units of information manageable by a hardware/software interface system 有权
标题翻译：用于实现由硬件/软件接口系统可管理的信息单元的同步模式的系统和方法
公开(公告)号：US08166101B2
公开(公告)日：2012-04-24
申请号：US10693362
申请日：2003-10-24
申请人： Ashish Shah
发明人： Ashish Shah
IPC分类号： G06F15/16 , G06F13/28
CPC分类号： G06F17/30595 , Y10S707/99935 , Y10S707/99943 , Y10S707/99944 , Y10S707/99945
摘要： Several embodiments of the present invention comprise a storage platform that provides a synchronization service that (i) allows multiple instances of the storage platform (each with its own data store) to synchronize parts of their content according to a flexible set of rules, and (ii) provides an infrastructure for third parties to synchronize the data store of the storage platform of the present invention with with other data sources that implement proprietary protocols. In various embodiments, storage-platform-to-storage-platform synchronization occurs among a group of participating “replicas.” For example, it may be desirable to provide synchronization between the data store of the storage platform with another remote data store under the control of another instance of the storage platform, perhaps running on a different computer system.
摘要翻译：本发明的几个实施例包括提供同步服务的存储平台，该同步服务（i）允许存储平台（每个具有其自己的数据存储器）的多个实例根据一组灵活的规则来同步其内容的一部分，并且（ ii）为第三方提供了将本发明的存储平台的数据存储与实现专有协议的其他数据源同步的基础设施。在各种实施例中，存储平台到存储平台的同步在一组参与的“副本”中发生。例如，可能期望在存储平台的数据存储与控制下的另一个远程数据存储之间提供同步另一个存储平台的实例，可能运行在不同的计算机系统上。

6. 发明申请

US20090200452A1 IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT 有权
标题翻译：具有自由自对准聚焦元件的图像传感器
公开(公告)号：US20090200452A1
公开(公告)日：2009-08-13
申请号：US12030055
申请日：2008-02-12
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Wei Dong Qian , Ashish Shah , Howard Rhodes
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Wei Dong Qian , Ashish Shah , Howard Rhodes
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14625 , H01L27/14629 , H01L27/14685
摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.
摘要翻译：图像传感器包括光学传感器区域，电介质和金属层的堆叠以及掩埋的聚焦层。光学传感器设置在半导体衬底内。电介质层和金属层堆叠在光学传感器区域上方的半导体衬底上。金属层包括对准的光学通过，以暴露穿过堆叠的光路形成顶部电介质层通过光学传感器区域。掩埋的聚焦层设置在堆叠内的金属层的适形金属层之上。掩埋聚焦层包括由适形金属层的光学通过形成的弯曲表面，以将光聚焦到光学传感器区域上。

7. 发明授权

US07440981B2 Systems and methods for replicating data stores 有权
标题翻译：用于复制数据存储的系统和方法
公开(公告)号：US07440981B2
公开(公告)日：2008-10-21
申请号：US10631591
申请日：2003-07-31
申请人： Lev Novik , Irena Hudis , Douglas B. Terry , Ashish Shah , Sanjay Anand , Yunxin Wu
发明人： Lev Novik , Irena Hudis , Douglas B. Terry , Ashish Shah , Sanjay Anand , Yunxin Wu
IPC分类号： G06F17/30
CPC分类号： G06F17/30581 , Y10S707/99953 , Y10S707/99955
摘要： Systems and methods for replicating replicas in a sync community. Each replica in the sync community stores knowledge that represents changes the replica is aware of. Because each replica has its own knowledge, each replica does not need to know how many replicas are in the sync community or the topology of the sync community. By sending the knowledge with a request for changes, a replicating replica can enumerate the changes to replicate by comparing its knowledge with the received knowledge. After replication, the knowledge is updated. Knowledge may also include made-with-knowledge change IDs that permit each resolution to identify what a replica was aware of when a particular change was made. The made-with-knowledge values are used to detect conflicts during replication.
摘要翻译：在同步社区中复制副本的系统和方法。同步社区中的每个副本都存储表示副本所注意到的更改的知识。由于每个副本都有自己的知识，因此每个副本不需要知道同步社区中多少副本或同步社区的拓扑。通过向知识发送更改请求，复制副本可以通过将其知识与接收到的知识进行比较来枚举复制的更改。复制后，知识将被更新。知识也可以包括知识变更ID，允许每个决议识别在进行特定更改时复制品知道什么。使用知识产权值用于检测复制期间的冲突。

8. 发明申请

US20060289795A1 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：US20060289795A1
公开(公告)日：2006-12-28
申请号：US11383383
申请日：2006-05-15
申请人： Dale Dubois , Juan Rocha-Alvarez , Amir Al-Bayati , Khaled Elsheref , Alexandros Demos , Lester D'Cruz , Hichem M'Saad , Ashish Shah , Takashi Shimizu , Naoyuki Iwasaki
发明人： Dale Dubois , Juan Rocha-Alvarez , Amir Al-Bayati , Khaled Elsheref , Alexandros Demos , Lester D'Cruz , Hichem M'Saad , Ashish Shah , Takashi Shimizu , Naoyuki Iwasaki
IPC分类号： G21G5/00
CPC分类号： H01J37/317 , H01J2237/2001
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。在一个实施例中，真空室包括阴极，阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

9. 发明申请

US20060154416A1 Method of pad printing in the manufacture of capacitors 审中-公开
标题翻译：制造电容器时的移印方法
公开(公告)号：US20060154416A1
公开(公告)日：2006-07-13
申请号：US11367972
申请日：2006-03-03
申请人： Keith Seitz , Ashish Shah , Barry Muffoletto , Wolfram Neff , Douglas Eberhard , Jason Hahl
发明人： Keith Seitz , Ashish Shah , Barry Muffoletto , Wolfram Neff , Douglas Eberhard , Jason Hahl
IPC分类号： H01L21/8244 , H01L21/8234
CPC分类号： H01G9/0032 , B41F17/001 , H01G9/042 , H01G9/0425 , H01G9/06 , H01G9/07 , H01M4/0471 , H01M4/133 , H01M4/48 , H01M4/58 , H01M4/583 , H01M4/661 , H01M14/00
摘要： Deposition of a metal-containing reagent solution or suspension or a carbon nanotube-containing suspension onto a conductive substrate by various pad-printing techniques is described. In the case of a metal-containing solution or suspension, a pseudocapacitive oxide coating, nitride coating, carbon nitride coating, carbide coating, or carbon nanotube coating results. In any event, the active coating has acceptable surface area for incorporation into an electrolytic capacitor, such as one having a tantalum anode.
摘要翻译：描述了通过各种衬垫印刷技术将含金属的试剂溶液或悬浮液或含碳纳米管的悬浮液沉积到导电基底上。在含金属溶液或悬浮液的情况下，产生假电容氧化物涂层，氮化物涂层，氮化碳涂层，碳化物涂层或碳纳米管涂层。无论如何，活性涂层具有可接受的表面积，用于结合到电解电容器中，例如具有钽阳极的电解电容器。

10. 发明授权

US06740420B2 Substrate having a modified native oxide layer for improved electrical conductivity 失效
标题翻译：底物具有改进的天然氧化物层，用于改善电导率
公开(公告)号：US06740420B2
公开(公告)日：2004-05-25
申请号：US10411802
申请日：2003-04-11
申请人： Barry Muffoletto , Ashish Shah , Donald H. Stephenson
发明人： Barry Muffoletto , Ashish Shah , Donald H. Stephenson
IPC分类号： B32B1504
CPC分类号： H01G4/008 , C23C14/5833 , C23C14/5893 , C23C16/56 , C23C26/00 , C23C26/02 , H01G9/042 , H01M4/661 , Y10S148/90 , Y10S428/926 , Y10S428/931 , Y10T428/8305
摘要： A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like. The high-energy beam can be an ion beam from a high-energy ion source or it can be a laser beam. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.
摘要翻译： 1.一种用于改善金属，金属合金或金属氧化物的基底的导电性的方法，包括从ⅦA族金属（Fe，Ru，Os，Co，Rh，Ir，Ni，Pd等）中沉积少量或少量的金属或金属， Pt）或VA族金属（V，Nb，Ta）的金属，金属合金和/或金属氧化物的基底上的IA族金属（Cu，Ag，Au）将VIA金属（Cr，Mo，W）和Al，Mn，Ni和Cu组合，然后将高能束引导到衬底上，以使沉积材料与衬底金属或金属合金的天然氧化物混合。天然氧化物层由电绝缘转变为导电。沉积步骤可以例如通过离子束辅助沉积，电子束沉积，化学气相沉积，物理气相沉积，等离子体辅助，低压等离子体和等离子体喷涂沉积等进行。高能束可以是来自高能离子源的离子束，也可以是激光束。沉积可以在处理的或未处理的基底上进行。具有导电性的自然氧化物层的衬底可用于制造诸如电容器和电池的器件的电极。

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