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    • 1. 发明授权
    • Methods of and apparatus for controlling polishing surface characteristics for chemical mechanical polishing
    • 用于控制化学机械抛光抛光表面特性的方法和设备
    • US07040954B1
    • 2006-05-09
    • US10952608
    • 2004-09-28
    • Simon McClatchiePeter NortonXuyen PhamRen Zhou
    • Simon McClatchiePeter NortonXuyen PhamRen Zhou
    • B24B49/18B24B53/00
    • B24B37/005B24B49/18
    • Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.
    • 设备和方法控制CMP以均匀抛光一系列晶片。 平均电动机电流I(avg),以及在晶圆上的CMP期间电动机执行的相关的平均功率W(avg)可靠地指示抛光垫的抛光表面的粗糙度抛光特性的质量。 调节器控制器通过调节相对于由CMP引起的抛光表面的质量的变化率来控制抛光表面的质量恢复的速率。 在许多CMP处理的晶片上测量和平均电动机电流。 该方法根据平均工作是否在基线范围内定义了平均工作值和控制条件的基准范围。 当抛光表面相对于被抛光的每个晶片以恒定速度移动时,基于平均电动机电流的控制信号表示抛光特性的质量。
    • 6. 发明授权
    • Carrier head having location optimized vacuum holes
    • 具有位置优化的真空孔的承载头
    • US06821195B1
    • 2004-11-23
    • US10187228
    • 2002-06-28
    • Xuyen PhamRen ZhouRaisa Khavinson
    • Xuyen PhamRen ZhouRaisa Khavinson
    • B24B1900
    • B24B37/30
    • An invention is provided for a carrier head for use in a CMP process. The carrier head includes a metal plate that is capable of transferring a downforce to a wafer during a CMP operation. A plurality of vacuum holes is disposed within the metal plate, wherein each vacuum hole is positioned such that the vacuum hole is within five millimeters of an edge of the wafer during the CMP operation. In this manner, each vacuum hole can be positioned such that the vacuum hole is within an edge exclusion zone of the wafer during the CMP operation. In some embodiments, each vacuum hole is positioned such that the vacuum hole is within three millimeters of the edge of the wafer during the CMP operation, such as 2.7 millimeters from the edge of the wafer.
    • 本发明提供一种用于CMP工艺的载体头。 载体头包括在CMP操作期间能够将下压力传递到晶片的金属板。 多个真空孔设置在金属板内,其中每个真空孔定位成使得在CMP操作期间真空孔在晶片边缘的5毫米内。 以这种方式,每个真空孔可以被定位成使得在CMP操作期间真空孔位于晶片的边缘排除区域内。 在一些实施例中,每个真空孔被定位成使得真空孔在CMP操作期间在晶片边缘的三毫米内,例如距离晶片边缘2.7毫米。
    • 10. 发明授权
    • System and method for point of use delivery, control and mixing chemical and slurry for CMP/cleaning system
    • 用于CMP /清洁系统的使用点输送,控制和混合化学和浆料的系统和方法
    • US06732017B2
    • 2004-05-04
    • US10077831
    • 2002-02-15
    • Xuyen PhamTuan NguyenVien QuachRen Zhou
    • Xuyen PhamTuan NguyenVien QuachRen Zhou
    • G05B2100
    • G05D11/132
    • A chemical mechanical planarization (CMP) system includes a point of use chemical mixing system. The point of use chemical mixing system includes a first and a second pump, a first and a second flow sensor, a mixer and a controller. The first pump has an input coupled to a first chemical supply and the first flow sensor coupled to the output of the first pump. The second pump has an input coupled to a second chemical supply and the second flow sensor coupled to the output of the second pump. The mixer has inputs coupled to the output of the first and second flow sensors. The controller is configured to receive signals from the first and second flow sensors and to produce control signals for the first and second pumps and the mixer. The controller is further configured to cause a mixture of the first and second chemicals upon a demand from the CMP process.
    • 化学机械平面化(CMP)系统包括使用化学混合系统。 使用的化学混合系统包括第一和第二泵,第一和第二流量传感器,混合器和控制器。 第一泵具有耦合到第一化学品供应的输入和耦合到第一泵的输出的第一流量传感器。 第二泵具有耦合到第二化学品供应的输入端和耦合到第二泵的输出端的第二流量传感器。 混合器具有耦合到第一和第二流量传感器的输出的输入。 控制器被配置为从第一和第二流量传感器接收信号并且产生用于第一和第二泵和混合器的控制信号。 控制器还被配置成根据CMP工艺的要求引起第一和第二化学品的混合。