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    • 1. 发明申请
    • Multi zone shower head for cleaning and drying wafer and method of cleaning and drying wafer
    • 用于清洗和干燥晶圆的多区域淋浴头以及清洗和干燥晶圆的方法
    • US20070246079A1
    • 2007-10-25
    • US11408664
    • 2006-04-21
    • Xuyen Pham
    • Xuyen Pham
    • B08B3/00B08B7/00
    • H01L21/67051H01L21/6708
    • A method and system to clean and rinse and dry wafer comprises a precision control of an outward-moving inner boundary condition and a steady state edge boundary condition. The edge boundary condition can confine the liquid within the substrate by an edge liquid flow step, to create an outer liquid boundary, to confine the liquid within the wafer, and to compensate for liquid lost through process conditions such as wafer spinning. The outward-moving inner boundary condition can control or distribute the liquid within the substrate by an inner liquid boundary condition that moves outward to the edge of the wafer, to create an outward-moving inner liquid boundary, to uniformly distribute liquid within the wafer, and to uniformly drying the wafer.
    • 清洗和干燥晶片的方法和系统包括向外移动的内边界条件和稳态边界边界条件的精确控制。 边缘边界条件可以通过边缘液流步骤将液体限制在基板内,以产生外部液体边界,以将液体限制在晶片内,并补偿在诸如晶片旋转之类的工艺条件下损失的液体。 向外移动的内边界条件可以通过向外移动到晶片边缘的内部液体边界条件来控制或分布在基板内的液体,以产生向外移动的内部液体边界,以将液体均匀地分布在晶片内, 并均匀干燥晶片。
    • 6. 发明授权
    • Polishing apparatus and substrate retainer ring providing continuous slurry distribution
    • 抛光装置和基板保持环提供连续的浆料分布
    • US06447380B1
    • 2002-09-10
    • US09607896
    • 2000-06-30
    • Xuyen PhamJoe Simon
    • Xuyen PhamJoe Simon
    • B24B3704
    • B24B37/32
    • A polishing apparatus includes a rotatable head assembly including a substrate retainer that incorporates a cavity in the face surface of the substrate retainer for temporarily holding polishing slurry during operation of the polishing apparatus. The cavity resides in the face surface of the substrate retainer at a location adjacent the perimeter surface of the retainer. During operation of the polishing apparatus, slurry flowing along the surface of the polishing pad flows into the cavity where a portion of the slurry is temporarily held. As the head assembly of the polishing apparatus rotates against the polishing pad, slurry continuously flows from the cavity across the polishing pad and is uniformly distributed across the exposed surface of the substrate being polished. An offset in the cavity wall permits used slurry to flow away from the substrate retainer during rotation of the head assembly.
    • 抛光装置包括可旋转的头部组件,其包括基板保持器,该基板保持器在基板保持器的表面中并入腔体,用于在抛光装置的操作期间临时保持抛光浆料。 空腔位于与保持器的周边表面相邻的位置处的基板保持器的表面。 在抛光装置的操作期间,沿着抛光垫的表面流动的浆料流入其中浆料的一部分暂时保持的空腔。 当抛光装置的头部组件相对于抛光垫旋转时,浆料从腔体连续地流过抛光垫,并且均匀分布在被抛光的基底的暴露表面上。 空腔壁中的偏移允许使用的浆料在头部组件旋转期间从衬底保持器流出。
    • 10. 发明授权
    • Methods of and apparatus for controlling polishing surface characteristics for chemical mechanical polishing
    • 用于控制化学机械抛光抛光表面特性的方法和设备
    • US07040954B1
    • 2006-05-09
    • US10952608
    • 2004-09-28
    • Simon McClatchiePeter NortonXuyen PhamRen Zhou
    • Simon McClatchiePeter NortonXuyen PhamRen Zhou
    • B24B49/18B24B53/00
    • B24B37/005B24B49/18
    • Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.
    • 设备和方法控制CMP以均匀抛光一系列晶片。 平均电动机电流I(avg),以及在晶圆上的CMP期间电动机执行的相关的平均功率W(avg)可靠地指示抛光垫的抛光表面的粗糙度抛光特性的质量。 调节器控制器通过调节相对于由CMP引起的抛光表面的质量的变化率来控制抛光表面的质量恢复的速率。 在许多CMP处理的晶片上测量和平均电动机电流。 该方法根据平均工作是否在基线范围内定义了平均工作值和控制条件的基准范围。 当抛光表面相对于被抛光的每个晶片以恒定速度移动时,基于平均电动机电流的控制信号表示抛光特性的质量。