专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08969276B2 Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates 有权
标题翻译：酸性酸性蚀刻溶液和用于纹理化单晶和多晶硅衬底表面的方法
公开(公告)号：US08969276B2
公开(公告)日：2015-03-03
申请号：US13394349
申请日：2010-09-09
申请人： Simon Braun , Julian Proelss , Ihor Melnyk , Michael Michel , Stefan Mathijssen
发明人： Simon Braun , Julian Proelss , Ihor Melnyk , Michael Michel , Stefan Mathijssen
IPC分类号： H01L31/0236 , C09K13/08 , C11D11/00
CPC分类号： C09K13/08 , C11D11/0047 , H01L31/02363 , Y02E10/50
摘要： An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.
摘要翻译：一种适用于对单晶和多晶硅衬底的表面进行纹理化的含水酸性蚀刻溶液，并且基于溶液的完全重量含有3至10重量％的氢氟酸; 10至35重量％的硝酸; 5至40重量％的硫酸; 和55〜82重量％的水; 一种用于纹理化单晶和多晶硅衬底的表面的方法，包括以下步骤：（1）使基底的至少一个主表面与所述酸性酸性蚀刻溶液接触; （2）蚀刻所述基板的所述至少一个主表面一段时间并且足以获得由凹陷和突起组成的表面纹理的温度; 和（3）将所述基材的至少一个主表面与所述酸性蚀刻溶液接触; 以及使用所述溶液和所述纹理化方法制造光伏电池和太阳能电池的方法。

2. 发明申请

US20120160320A1 AQUEOUS ACIDIC ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES 有权
标题翻译：水性酸蚀刻溶液和单晶和多晶硅基材表面的方法
公开(公告)号：US20120160320A1
公开(公告)日：2012-06-28
申请号：US13394349
申请日：2010-09-09
申请人： Simon Braun , Julian Proelss , Ihor Melnyk , Michael Michel , Stefan Mathijssen
发明人： Simon Braun , Julian Proelss , Ihor Melnyk , Michael Michel , Stefan Mathijssen
IPC分类号： H01L31/0236 , H01L21/306 , H01L31/18 , C09K13/08
CPC分类号： C09K13/08 , C11D11/0047 , H01L31/02363 , Y02E10/50
摘要： An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.
摘要翻译：一种适用于对单晶和多晶硅衬底的表面进行纹理化的含水酸性蚀刻溶液，并且基于溶液的完全重量含有3至10重量％的氢氟酸; 10至35重量％的硝酸; 5至40重量％的硫酸; 和55〜82重量％的水; 一种用于纹理化单晶和多晶硅衬底的表面的方法，包括以下步骤：（1）使基底的至少一个主表面与所述酸性酸性蚀刻溶液接触; （2）蚀刻所述基板的所述至少一个主表面一段时间并且足以获得由凹陷和突起组成的表面纹理的温度; 和（3）将所述基材的至少一个主表面与所述酸性蚀刻溶液接触; 以及使用所述溶液和所述纹理化方法制造光伏电池和太阳能电池的方法。

3. 发明申请

US20110260097A1 ADDITIVE FOR ALKALINE ETCHING SOLUTIONS, IN PARTICULAR FOR TEXTURE ETCHING SOLUTIONS, AND PROCESS FOR PRODUCING IT 审中-公开
标题翻译：用于碱性蚀刻溶液的添加剂，特别是用于纹理蚀刻溶液的方法和生产方法
公开(公告)号：US20110260097A1
公开(公告)日：2011-10-27
申请号：US13128052
申请日：2009-11-05
申请人： Ihor Melnyk , Jens Kruemberg , Michael Schmidt , Michael Michel
发明人： Ihor Melnyk , Jens Kruemberg , Michael Schmidt , Michael Michel
IPC分类号： C09K13/02 , C09K13/00
CPC分类号： C09K13/02 , H01L31/0236 , H01L31/02363 , Y02E10/50
摘要： A product is obtained by mixing at least one polyethylene glycol with a base, allowing the mixture to rest in ambient air and at a temperature of approximately 25 degrees Celsius to form two phases, and separating the less dense phase representing the product. The product is used as an additive to etching solutions.
摘要翻译：通过将至少一种聚乙二醇与碱混合获得产物，使混合物在环境空气中和约25摄氏度的温度下静置以形成两相，并分离代表产物的较不致密的相。该产品用作蚀刻溶液的添加剂。

4. 发明授权

US08182706B2 Method for texturing silicon wafers for producing solar cells 失效
标题翻译：用于生产太阳能电池的硅晶片的纹理方法
公开(公告)号：US08182706B2
公开(公告)日：2012-05-22
申请号：US12438009
申请日：2007-07-12
申请人： Peter Fath , Ihor Melnyk , Eckard Wefringhaus
发明人： Peter Fath , Ihor Melnyk , Eckard Wefringhaus
IPC分类号： B29D11/00 , H01L21/302 , H01L21/461
CPC分类号： H01L31/1804 , H01L31/02363 , Y02E10/547 , Y02P70/521
摘要： In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way.
摘要翻译：在用于生产太阳能电池的硅晶片的纹理化方法中，引入硅晶片的步骤包括使用在至少80摄氏度的温度下的纹理溶液，其包含与1重量％至6重量％的水混合的KOH或2重量％至8重量％的NaOH和表面活性剂或表面活性剂混合物构成小于0.01重量％。非常经济的纹理可以这样执行。

5. 发明申请

US20100243036A1 Method for Fabricating a Photovolataic Element with Stabilised Efficiency 有权
标题翻译：用稳定效率制造光电元件的方法
公开(公告)号：US20100243036A1
公开(公告)日：2010-09-30
申请号：US12225337
申请日：2007-03-21
申请人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
发明人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
IPC分类号： H01L31/0256 , H01L21/56 , H01L21/26
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilisation treatment step.
摘要翻译：提出了一种制造具有稳定效率的光伏元件的方法。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

6. 发明申请

US20110162716A1 DEVICE FOR FABRICATING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY 审中-公开
标题翻译：用于制造具有稳定效率的光伏元件的装置
公开(公告)号：US20110162716A1
公开(公告)日：2011-07-07
申请号：US12971232
申请日：2010-12-17
申请人： Axel Herguth , Gunnar Schubert , Giso Hahn , Ihor Melnyk , Martin Käs
发明人： Axel Herguth , Gunnar Schubert , Giso Hahn , Ihor Melnyk , Martin Käs
IPC分类号： H01L31/0264 , H01L31/18 , H05B3/68
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
摘要翻译：提出了一种用于制造具有稳定效率的光电元件的方法和装置。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

7. 发明申请

US20090039513A1 Contacting Method for Semiconductor Material and Semiconductor Device 审中-公开
标题翻译：半导体材料和半导体器件的接触方法
公开(公告)号：US20090039513A1
公开(公告)日：2009-02-12
申请号：US12235264
申请日：2008-09-22
申请人： Peter Fath , Ihor Melnyk
发明人： Peter Fath , Ihor Melnyk
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A contact-making method for a semiconductor material contains the method steps of forming a diffusion barrier which promotes electrical contact and adhesion on at least one portion of a surface of a semiconductor and forming a metallization on the diffusion barrier. The diffusion barrier being formed by applying a metalliforous paste to at least one portion of the semiconductor surface or to at least one portion of a layer covering the semiconductor surface, and a semiconductor component with a diffusion barrier which is arranged in the surface of the semiconductor and which promotes electrical contact between the semiconductor material and a metallization. The metallization is applied to the diffusion barrier. The diffusion barrier is formed by a sintered metalliforous paste applied to at least one portion of the semiconductor surface.
摘要翻译：用于半导体材料的接触方法包括形成扩散阻挡层的方法步骤，该扩散阻挡层促进半导体表面的至少一部分上的电接触和粘附，并在扩散阻挡层上形成金属化。扩散阻挡层是通过将金属糊剂施加到半导体表面的至少一部分或覆盖半导体表面的层的至少一部分而形成的，以及布置在半导体表面中的具有扩散阻挡层的半导体部件并且其促进半导体材料与金属化之间的电接触。金属化被应用于扩散阻挡层。扩散阻挡层是通过施加在半导体表面的至少一部分上的烧结金属糊剂形成的。

8. 发明申请

US20060068597A1 Method for texturing surfaces of silicon wafers 有权
标题翻译：硅片表面纹理化方法
公开(公告)号：US20060068597A1
公开(公告)日：2006-03-30
申请号：US10555141
申请日：2004-04-22
申请人： Alexander Hauser , Ihor Melnyk , Peter Fath
发明人： Alexander Hauser , Ihor Melnyk , Peter Fath
IPC分类号： H01L21/302
CPC分类号： H01L21/67086 , C09K13/08 , H01L31/02363 , Y02E10/50
摘要： In a method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution, it is provided that the etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and that the temperature of the etching solution is between 0 and 15 degrees Celsius. This results in a comparatively higher efficiency due to reduced reflection by the silicon wafers.
摘要翻译：在用于纹理化硅晶片表面的方法中，包括以下步骤：将硅晶片浸入水，浓氢氟酸和浓硝酸的蚀刻溶液中并设定蚀刻溶液的温度，条件是蚀刻溶液包含 20％至55％的水，10％至40％浓缩的氢氟酸和20％至60％的浓硝酸，并且蚀刻溶液的温度在0至15摄氏度之间。这导致由于硅晶片的反射减少而产生相对较高的效率。

9. 发明授权

US07192885B2 Method for texturing surfaces of silicon wafers 有权
标题翻译：硅片表面纹理化方法
公开(公告)号：US07192885B2
公开(公告)日：2007-03-20
申请号：US10555141
申请日：2004-04-22
申请人： Alexander Hauser , Ihor Melnyk , Peter Fath
发明人： Alexander Hauser , Ihor Melnyk , Peter Fath
IPC分类号： H01L21/461 , H01L21/302 , H01L21/00
CPC分类号： H01L21/67086 , C09K13/08 , H01L31/02363 , Y02E10/50
摘要： A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and the temperature of the etching solution is between 0 and 15 degrees Celsius.
摘要翻译：一种用于纹理化硅晶片表面的方法，包括以下步骤：将硅晶片浸入水，浓氢氟酸和浓硝酸的蚀刻溶液中并设定蚀刻溶液的温度。蚀刻溶液以百分比计包含20％至55％的水，10％至40％的浓氢氟酸和20％至60％浓硝酸，蚀刻溶液的温度为0至15摄氏度。

10. 发明授权

US08263176B2 Method for fabricating a photovoltaic element with stabilised efficiency 有权
标题翻译：制造稳定效率的光伏元件的方法
公开(公告)号：US08263176B2
公开(公告)日：2012-09-11
申请号：US12225337
申请日：2007-03-21
申请人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
发明人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
IPC分类号： B05D5/06
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
摘要翻译：提出了一种制造具有稳定效率的光伏元件的方法。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式