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1. 发明授权

US08263176B2 Method for fabricating a photovoltaic element with stabilised efficiency 有权
标题翻译：制造稳定效率的光伏元件的方法
公开(公告)号：US08263176B2
公开(公告)日：2012-09-11
申请号：US12225337
申请日：2007-03-21
申请人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
发明人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
IPC分类号： B05D5/06
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
摘要翻译：提出了一种制造具有稳定效率的光伏元件的方法。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

2. 发明申请

US20100243036A1 Method for Fabricating a Photovolataic Element with Stabilised Efficiency 有权
标题翻译：用稳定效率制造光电元件的方法
公开(公告)号：US20100243036A1
公开(公告)日：2010-09-30
申请号：US12225337
申请日：2007-03-21
申请人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
发明人： Axel Herguth , Gunnar Schubert , Martin Käs , Giso Hahn , Ihor Melnyk
IPC分类号： H01L31/0256 , H01L21/56 , H01L21/26
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilisation treatment step.
摘要翻译：提出了一种制造具有稳定效率的光伏元件的方法。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

3. 发明申请

US20140021472A1 PRINTABLE MEDIUM THAT CONTAINS METAL PARTICLES AND EFFECTS ETCHING, MORE PARTICULARLY FOR MAKING CONTACT WITH SILICON DURING THE PRODUCTION OF A SOLAR CELL 审中-公开
标题翻译：包含金属颗粒和影响蚀刻的可印制介质，特别是在生产太阳能电池时与硅制造接触
公开(公告)号：US20140021472A1
公开(公告)日：2014-01-23
申请号：US14110065
申请日：2012-04-05
申请人： Giso Hahn , Bernd Raabe , Stefan Braun
发明人： Giso Hahn , Bernd Raabe , Stefan Braun
IPC分类号： H01L33/48 , H01L33/00
CPC分类号： H01L33/48 , C09D11/033 , C09D11/037 , C09D11/52 , C09K13/02 , C09K13/04 , H01B1/22 , H01L31/022425 , H01L33/0058 , Y02E10/50
摘要： A printable medium is proposed, such as can be used, for example, during the production of metal contacts for silicon solar cells which are covered with a passivation layer on a surface of a silicon substrate. A corresponding production method and a correspondingly produced solar cell are also disclosed. The printable medium contains at least one medium that etches the passivation layer and metal particles such as nickel particles, for example. By locally applying the printable medium to the passivation layer and subsequent heating, the passivation layer can be opened locally with the aid of the etching medium. As a result, the nickel particles can form a mechanical and electrical contact with the substrate surface, preferably with the formation of a nickel silicide layer. The printable medium and the production method made possible therewith are cost-effective owing to the use of nickel particles, for example, and allow both good electrical contact and avoidance of undesirable high-temperature steps.
摘要翻译：提出了一种可印刷介质，例如可以用于在硅衬底的表面上被钝化层覆盖的硅太阳能电池的制造中。还公开了相应的生产方法和相应生产的太阳能电池。可印刷介质包含至少一种蚀刻钝化层的介质和例如镍颗粒的金属颗粒。通过将可印刷介质局部施加到钝化层和随后的加热，钝化层可以借助于蚀刻介质局部地打开。结果，镍颗粒可以与衬底表面形成机械和电接触，优选地形成硅化镍层。由于使用例如镍粒子，因此能够实现的可印刷介质和制造方法是成本有效的，并且允许良好的电接触和避免不期望的高温步骤。

4. 发明授权

US08586396B2 Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell 有权
标题翻译：用于制造具有背蚀刻发射极的硅太阳能电池以及相应的太阳能电池的方法
公开(公告)号：US08586396B2
公开(公告)日：2013-11-19
申请号：US12670774
申请日：2008-07-23
申请人： Giso Hahn , Helge Haverkamp , Bernd Raabe , Amir Dastgheib-Shirazi , Felix Book
发明人： Giso Hahn , Helge Haverkamp , Bernd Raabe , Amir Dastgheib-Shirazi , Felix Book
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidized. This oxidized porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.
摘要翻译：提出了一种用于制造具有背蚀刻发射体的硅太阳能电池的方法，优选地具有选择性发射极和相应的太阳能电池。根据一个方面，该方法包括以下方法步骤：在太阳能电池基板的发射极表面处产生二维延伸的发射极; 在所述发射器表面的第一部分区域上施加蚀刻阻挡层; 在未被蚀刻阻挡层覆盖的发射器表面的第二部分区域中蚀刻发射体表面; 去除蚀刻屏障; 并在第一部分区域产生金属接触。在该方法期间，特别是在蚀刻第二部分区域中的发射极表面期间，有利地产生多孔硅层，然后氧化。随后可以将氧化的多孔硅层与可能存在的任何磷玻璃一起蚀刻掉。该方法利用传统的丝网印刷和蚀刻技术，因此与目前的工业生产工厂相兼容。

5. 发明申请

US20130153025A1 METHOD FOR PRODUCING A SOLAR CELL HAVING A TEXTURED FRONT FACE AND CORRESPONDING SOLAR CELL 审中-公开
标题翻译：用于生产具有纹理前表面和对应的太阳能电池的太阳能电池的方法
公开(公告)号：US20130153025A1
公开(公告)日：2013-06-20
申请号：US13819205
申请日：2011-08-23
申请人： Giso Hahn , Amir Dastgheib-Shirazi
发明人： Giso Hahn , Amir Dastgheib-Shirazi
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/18 , H01L31/02363 , H01L31/02366 , Y02E10/50
摘要： The invention relates to a method for producing a solar cell and to a solar cell which can be produced accordingly. On a solar cell substrate, first a ridged texture, which may for example comprise pyramids produced by alkaline etching, is formed both on a front face and on a rear face of the solar cell substrate. Then an etching barrier layer is applied to the front face of the solar cell substrate. Next the texture on the rear face of, the solar cell substrate is smoothed by etching in an isotropically acting etching solution which for example contains acid, wherein the front face is protected by the etching barrier layer. Thus, ridged structures on the rear face can be avoided and in this way reflection can be increased and surface passivation can be improved, both of which can lead to an increased potential efficiency. At the same time an emitter layer formed over the entire surface of the solar cell substrate on the rear face can be removed during etching, so that electrical isolation of the front face contacts and the rear face contacts may be superfluous.
摘要翻译：本发明涉及一种能够相应地生产太阳能电池和太阳能电池的方法。在太阳能电池基板上，首先在太阳能电池基板的正面和背面形成脊状纹理，该纹理例如包括通过碱蚀刻产生的棱锥。然后将蚀刻阻挡层施加到太阳能电池基板的正面。接下来，通过在诸如含有酸的各向同性作用的蚀刻溶液中进行蚀刻来平滑太阳能电池基板的背面上的纹理，其中前表面被蚀刻阻挡层保护。因此，可以避免后表面上的脊状结构，并且以这种方式可以增加反射并且可以改善表面钝化，这两者都可以导致增加的电势效率。同时，在蚀刻期间可以去除在背面上形成在太阳能电池基板的整个表面上的发射极层，使得前面接触和后面接触的电隔离可能是多余的。

6. 发明申请

US20120129355A1 METHOD FOR TEXTURING A SURFACE OF A SEMICONDUCTOR SUBSTRATE AND DEVICE FOR CARRYING OUT THE METHOD 审中-公开
标题翻译：用于纹理化半导体衬底的表面的方法和用于实施该方法的器件
公开(公告)号：US20120129355A1
公开(公告)日：2012-05-24
申请号：US13322540
申请日：2010-05-20
申请人： Giso Hahn , Helge Haverkamp , Jose Nestor Ximello-Quiebras
发明人： Giso Hahn , Helge Haverkamp , Jose Nestor Ximello-Quiebras
IPC分类号： H01L21/306
CPC分类号： H01L21/67086 , H01L31/02363 , H01L31/18 , Y02E10/50
摘要： A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl alcohol. Therein, the process temperatures of the etching solution can be increased in comparison to conventional texturing methods, as a result of which the process time can be reduced. Process guidance is simplified and process stability is increased. A suitable texturing device for carrying out the method can, in addition to a basin for accommodating the etching solution and a heater for heating the etching solution to at least 85° C., furthermore have an optionally heatable emptying device for emptying the etching solution out of the basin, a removal device for removing crystallised water-soluble polymers from the etching solution and a circulation device for circulating the etching solution.
摘要翻译：提出了一种用于纹理化半导体衬底的表面的方法。其中，用蚀刻半导体衬底材料的蚀刻溶液蚀刻表面，其中将润湿剂添加到蚀刻溶液中，该润湿剂含有水溶性聚合物，特别是聚乙烯醇的形式。其中，与传统的纹理方法相比，蚀刻溶液的工艺温度可以提高，结果可以减少处理时间。流程引导简化，工艺稳定性提高。用于实施该方法的合适的纹理装置除了用于容纳蚀刻溶液的盆和用于将蚀刻溶液加热至至少85℃的加热器之外，还可以具有用于将蚀刻溶液排出的任选可加热的排空装置的用于从蚀刻溶液中除去结晶水溶性聚合物的去除装置和用于使蚀刻溶液循环的循环装置。

7. 发明申请

US20110162716A1 DEVICE FOR FABRICATING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY 审中-公开
标题翻译：用于制造具有稳定效率的光伏元件的装置
公开(公告)号：US20110162716A1
公开(公告)日：2011-07-07
申请号：US12971232
申请日：2010-12-17
申请人： Axel Herguth , Gunnar Schubert , Giso Hahn , Ihor Melnyk , Martin Käs
发明人： Axel Herguth , Gunnar Schubert , Giso Hahn , Ihor Melnyk , Martin Käs
IPC分类号： H01L31/0264 , H01L31/18 , H05B3/68
CPC分类号： H01L31/1864 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
摘要翻译：提出了一种用于制造具有稳定效率的光电元件的方法和装置。该方法包括以下步骤：制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃，优选为90℃，更优选为130℃，甚至更优选为160℃的可选温度范围内并且上限温度为230℃，优选为210℃，更优选为190℃，甚至更优选为180℃，并且在处理时间内在硅衬底中产生过量的少数载流子，例如，通过照射衬底或施加外部电压。该方法可用于制造光电元件，例如，太阳能电池或太阳能组件，其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。

8. 发明申请

US20100218826A1 METHOD FOR PRODUCING A SILICON SOLAR CELL WITH A BACK-ETCHED EMITTER AS WELL AS A CORRESPONDING SOLAR CELL 有权
标题翻译：用于生产具有背蚀刻发射体的硅太阳能电池的方法，作为相应的太阳能电池
公开(公告)号：US20100218826A1
公开(公告)日：2010-09-02
申请号：US12670774
申请日：2008-07-23
申请人： Giso Hahn , Helge Haverkamp , Bernd Raabe , Amir Dastgheib-Shirazi , Felix Book
发明人： Giso Hahn , Helge Haverkamp , Bernd Raabe , Amir Dastgheib-Shirazi , Felix Book
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.
摘要翻译：提出了一种用于制造具有背蚀刻发射体的硅太阳能电池的方法，优选地具有选择性发射极和相应的太阳能电池。根据一个方面，该方法包括以下方法步骤：在太阳能电池基板的发射极表面处产生二维延伸的发射极; 在所述发射器表面的第一部分区域上施加蚀刻阻挡层; 在未被蚀刻阻挡层覆盖的发射器表面的第二部分区域中蚀刻发射体表面; 去除蚀刻屏障; 并在第一部分区域产生金属接触。在该方法期间，特别是在蚀刻第二部分区域中的发射极表面期间，有利地产生多孔硅层，然后将其氧化。随后可以将氧化的多孔硅层与可能存在的任何磷玻璃一起蚀刻掉。该方法利用传统的丝网印刷和蚀刻技术，因此与目前的工业生产工厂相兼容。

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