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1. 发明授权

US06548961B2 Organic light emitting devices 有权
公开(公告)号：US06548961B2
公开(公告)日：2003-04-15
申请号：US09887780
申请日：2001-06-22
申请人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
发明人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
IPC分类号： G09G310
CPC分类号： H01L27/3253
摘要： A method of making a light-emitting device comprises forming a first and second components. The first component has a light-transmissive first substrate, light transmissive first electrode layer on the first substrate, an organic layer on the first electrode, and a second electrode layer on the organic layer. The second component has a second substrate and driver array circuitry on the second substrate. The first component and the second component are joined together with the second electrode of the first component facing the driver array of the second component. An electrical contact is formed between one of the first and second electrode layers of the first component and the driver array circuitry of the second component.

2. 发明授权

US06580090B2 Organic light-emitting devices 有权
标题翻译：有机发光装置
公开(公告)号：US06580090B2
公开(公告)日：2003-06-17
申请号：US09887639
申请日：2001-06-22
申请人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
发明人： Siegfried Johannes Barth , Tilman A. Beierlein , Siegfried F. Karg , Heike Riel , Walter Heinrich Riess
IPC分类号： H01L3524
CPC分类号： H01L51/525 , H01L27/3244 , H01L51/5212 , H01L51/5234 , H01L51/5243
摘要： A method of making a light-emitting device comprises forming a first and second components. The first component has a first substrate, a first electrode on the first substrate, an organic layer on the first electrode, and a light-transmissive second electrode on the organic layer. The second component has a light-transmissive second substrate, and a light transmissive, electrically conductive layer on the second substrate. The first and second components are joined with the second electrode of the first component facing the conductive layer of the second component. An electrical contact is formed between the second electrode of the first component and the electrically conductive layer of the second component.
摘要翻译：制造发光器件的方法包括形成第一和第二组分。第一部件具有第一基板，第一基板上的第一电极，第一电极上的有机层和有机层上的透光第二电极。第二部件具有透光的第二基板和在第二基板上的透光的导电层。第一和第二部件与面向第二部件的导电层的第一部件的第二电极接合。在第一部件的第二电极和第二部件的导电层之间形成电接触。

3. 发明授权

US06995391B2 Electrode structure for electronic and opto-electronic devices 有权
标题翻译：电子和光电器件的电极结构
公开(公告)号：US06995391B2
公开(公告)日：2006-02-07
申请号：US10499538
申请日：2002-11-26
申请人： Santos F. Alvarado , Tilman A. Beierlein , Brian K. Crone , Ute Drechsler , Roland Germann , Siegfried F. Karg , Peter Mueller , Lieike Riel , Walter Riess , Beat Ruhstaller , Paul Seidler , Roland Widmer
发明人： Santos F. Alvarado , Tilman A. Beierlein , Brian K. Crone , Ute Drechsler , Roland Germann , Siegfried F. Karg , Peter Mueller , Lieike Riel , Walter Riess , Beat Ruhstaller , Paul Seidler , Roland Widmer
IPC分类号： H01L35/24 , H01L51/00 , H01L29/22
CPC分类号： H01L51/5088 , H01L51/5218 , H01L2251/5315
摘要： The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
摘要翻译：本发明公开了一种电子和光电器件的电极结构。这种器件包括基本上具有导电层（204）的第一电极，形成在导电层上的非金属层（206），形成在非金属层上的碳氟化合物层（208），形成在该结构上的结构（210）。电极还可以包括在导电层和非金属层之间的缓冲层（205）。

4. 发明申请

US20090258166A1 DEVICE AND METHOD FOR PATTERNING STRUCTURES ON A SUBSTRATE 失效
标题翻译：用于在基板上绘制结构的装置和方法
公开(公告)号：US20090258166A1
公开(公告)日：2009-10-15
申请号：US10595434
申请日：2004-11-09
申请人： Siegfried F. Karg , Roland Germann , Heike E. Riel , Walter Heinrich Riess , Reto Schlittler
发明人： Siegfried F. Karg , Roland Germann , Heike E. Riel , Walter Heinrich Riess , Reto Schlittler
IPC分类号： C23C14/28 , G12B21/08 , G12B21/20 , C23C16/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , H01J2237/31738 , H01J2237/31759
摘要： A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour.
摘要翻译：用于图案化基板上的结构的装置包括具有扫描尖端，发光装置和扫描尖端周围的空间的成像装置。该空间包括当分解时适于化学气相沉积到基底上的材料的蒸汽。发光器件适于将具有不能分解蒸汽的强度的光束以这样的方式发射到扫描尖端上，使得由扫描尖端附近的光束感应的电磁场足够高以分解汽。

5. 发明授权

US08053037B2 Device and method for patterning structures on a substrate 失效
标题翻译：在基板上图案化结构的装置和方法
公开(公告)号：US08053037B2
公开(公告)日：2011-11-08
申请号：US10595434
申请日：2004-11-09
申请人： Siegfried F. Karg , Roland Germann , Heike E. Riel , Walter Heinrich Riess , Reto Schlittler
发明人： Siegfried F. Karg , Roland Germann , Heike E. Riel , Walter Heinrich Riess , Reto Schlittler
IPC分类号： C23C8/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , H01J2237/31738 , H01J2237/31759
摘要： A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapor of a material which is suitable for Chemical Vapor Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapor, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapor.
摘要翻译：用于图案化基板上的结构的装置包括具有扫描尖端，发光装置和扫描尖端周围的空间的成像装置。该空间包括当分解时适于化学气相沉积到基底上的材料的蒸汽。发光装置适于将具有不能分解蒸气的强度的光束以这样的方式发射到扫描尖端上，使得由扫描尖端附近的光束感应的电磁场高到足以分解汽。

6. 发明申请

US20080011996A1 MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE 审中-公开
标题翻译：具有可切换电阻的多层设备
公开(公告)号：US20080011996A1
公开(公告)日：2008-01-17
申请号：US11456591
申请日：2006-07-11
申请人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
发明人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.
摘要翻译：本发明提供了一种微电子器件，其包括电阻结构，该电阻结构包括多个可编程电阻层和至少一个中间层，使得中间层位于两个可编程电阻层之间。可编程电阻层可以单独掺杂或由不同的材料组成。可针对特定应用优化每个可编程电阻层。微电子器件可以用作可编程电阻器或存储器单元，因为其具有可切换的电阻并且不需要耗时的调节处理。

7. 发明授权

US08969179B2 Nanowire devices 有权
标题翻译：纳米线设备
公开(公告)号：US08969179B2
公开(公告)日：2015-03-03
申请号：US13885258
申请日：2011-11-02
申请人： Bernd W Gotsmann , Siegfried F. Karg , Heike E. Riel
发明人： Bernd W Gotsmann , Siegfried F. Karg , Heike E. Riel
IPC分类号： H01L21/20 , H01L21/02 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786 , B82Y10/00 , B82Y40/00
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y40/00 , H01L21/0262 , H01L21/02667 , H01L29/0669 , H01L29/0673 , H01L29/068 , H01L29/1054 , H01L29/42392 , H01L29/66439 , H01L29/66469 , H01L29/775 , H01L29/78687 , H01L29/78696
摘要： A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.
摘要翻译：一种形成纳米线器件的方法。该方法包括形成围绕半导体纳米线的应力层。执行该方法使得由于应力层，纳米线经受径向和纵向应变中的至少一个以增强纳米线中的载流子迁移率。径向和纵向应变部件可以单独使用或一起使用，并且可以分别制成拉伸或压缩，从而允许制定所需的应变特性，以增强给定装置的纳米线中的导电性。

8. 发明授权

US08530739B2 Nanowire multijunction solar cell 失效
标题翻译：纳米线多结太阳能电池
公开(公告)号：US08530739B2
公开(公告)日：2013-09-10
申请号：US13536348
申请日：2012-06-28
申请人： Siegfried F. Karg
发明人： Siegfried F. Karg
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/0687 , H01L31/0352 , H01L31/0547 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.
摘要翻译：太阳能电池包括从衬底层向外生长的衬底层和多个纳米线，至少两个纳米线包括多个子电池。太阳能电池还包括由透明的光散射材料形成并填充多个纳米线之间的区域的一个或多个导光层。

9. 发明授权

US08470676B2 Programmable element, and memory device or logic circuit 有权
标题翻译：可编程元件，存储器件或逻辑电路
公开(公告)号：US08470676B2
公开(公告)日：2013-06-25
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L21/8236
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

10. 发明授权

US08288803B2 Tunnel field effect devices 有权
标题翻译：隧道场效应装置
公开(公告)号：US08288803B2
公开(公告)日：2012-10-16
申请号：US12550857
申请日：2009-08-31
申请人： Mikael T. Bjoerk , Siegfried F. Karg , Joachim Knoch , Heike E. Riel , Walter H. Riess , Paul M. Solomon
发明人： Mikael T. Bjoerk , Siegfried F. Karg , Joachim Knoch , Heike E. Riel , Walter H. Riess , Paul M. Solomon
IPC分类号： H01L29/76
CPC分类号： H01L29/7391 , B82Y10/00 , H01L29/0665
摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.
摘要翻译：用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。

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