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1. 发明授权

US08470676B2 Programmable element, and memory device or logic circuit 有权
标题翻译：可编程元件，存储器件或逻辑电路
公开(公告)号：US08470676B2
公开(公告)日：2013-06-25
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L21/8236
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

2. 发明申请

US20090174428A1 PROGRAMMABLE ELEMENT, AND MEMORY DEVICE OR LOGIC CIRCUIT 有权
标题翻译：可编程元件，以及存储器件或逻辑电路
公开(公告)号：US20090174428A1
公开(公告)日：2009-07-09
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H03K19/173 , H01L47/00 , H01L29/66
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

3. 发明授权

US07569459B2 Nonvolatile programmable resistor memory cell 失效
标题翻译：非易失性可编程电阻存储单元
公开(公告)号：US07569459B2
公开(公告)日：2009-08-04
申请号：US11427820
申请日：2006-06-30
申请人： Siegfried F Karg , Gerhard Ingmar Meijer
发明人： Siegfried F Karg , Gerhard Ingmar Meijer
IPC分类号： H01L21/20
CPC分类号： H01L45/08 , H01L45/146 , H01L45/147
摘要： A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.
摘要翻译：提供了包括高迁移率离子导体的非易失性可编程电阻存储单元及其制造方法。存储单元包括第一和第二电极以及连接第一和第二电极的可逆且持久的可编程电阻结构。通过改变高迁移率氧离子导体区域的离子分布可以改变电阻。作为替代实施例，存储单元还包括过渡金属氧化物区域。

4. 发明申请

US20080152932A1 Programmable-Resistance Memory Cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US20080152932A1
公开(公告)日：2008-06-26
申请号：US11957797
申请日：2007-12-17
申请人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： H01L45/08 , G11C13/0002 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , Y10T29/49 , Y10T428/31504 , Y10T428/31678
摘要： The present invention relates to a memory cell (10) comprising: a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) comprises hydrogen, and the resistive structure (1) comprises a material that exhibits a hydrogen ion mobility value of at least 10−8 cm2/Vs.
摘要翻译：本发明涉及一种存储单元（10），包括：电阻结构（1）和耦合到电阻结构（1）的至少两个电极（2），其中：电阻结构（1）包括氢，并且电阻结构（1）包括表现出至少10 -8 V 2 / Vs / Vs的氢离子迁移率值的材料。

5. 发明申请

US20080011996A1 MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE 审中-公开
标题翻译：具有可切换电阻的多层设备
公开(公告)号：US20080011996A1
公开(公告)日：2008-01-17
申请号：US11456591
申请日：2006-07-11
申请人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
发明人： Johannes Georg Bednorz , Walter Heinrich Riess , Siegfried F. Karg , Gerhard Ingmar Meijer , German Hammerl
IPC分类号： H01L29/02
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.
摘要翻译：本发明提供了一种微电子器件，其包括电阻结构，该电阻结构包括多个可编程电阻层和至少一个中间层，使得中间层位于两个可编程电阻层之间。可编程电阻层可以单独掺杂或由不同的材料组成。可针对特定应用优化每个可编程电阻层。微电子器件可以用作可编程电阻器或存储器单元，因为其具有可切换的电阻并且不需要耗时的调节处理。

6. 发明申请

US20080001172A1 NONVOLATILE PROGRAMMABLE RESISTOR MEMORY CELL 失效
标题翻译：非易失性可编程电阻器存储器单元
公开(公告)号：US20080001172A1
公开(公告)日：2008-01-03
申请号：US11427820
申请日：2006-06-30
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L29/739
CPC分类号： H01L45/08 , H01L45/146 , H01L45/147
摘要： A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.
摘要翻译：提供了包括高迁移率离子导体的非易失性可编程电阻存储单元及其制造方法。存储单元包括第一和第二电极以及连接第一和第二电极的可逆且持久的可编程电阻结构。通过改变高迁移率氧离子导体区域的离子分布可以改变电阻。作为替代实施例，存储单元还包括过渡金属氧化物区域。

7. 发明授权

US07872901B2 Programmable-resistance memory cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US07872901B2
公开(公告)日：2011-01-18
申请号：US11957797
申请日：2007-12-17
申请人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Johannes Georg Bednorz , Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/00
CPC分类号： H01L45/08 , G11C13/0002 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , Y10T29/49 , Y10T428/31504 , Y10T428/31678
摘要： A memory cell (10) includes a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) includes hydrogen, and the resistive structure (1) includes a material that exhibits a hydrogen ion mobility value of at least 10−8cm2/Vs.
摘要翻译：存储单元（10）包括电阻结构（1）和耦合到电阻结构（1）的至少两个电极（2），其中：电阻结构（1）包括氢，并且电阻结构（1）包括表现出至少10-8cm 2 / Vs的氢离子迁移率值的材料。

8. 发明申请

US20100195381A1 SWITCHABLE ELEMENT 有权
标题翻译：可切换元件
公开(公告)号：US20100195381A1
公开(公告)日：2010-08-05
申请号：US12696227
申请日：2010-01-29
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/14 , H01L29/78
CPC分类号： G11C11/1675 , G11C11/161
摘要： A switchable element. The element includes a source electrode, a drain electrode, a conducting channel between the source electrode and the drain electrode, and a gate with multiferroic material being switchable, by application of an electrical signal to the gate, between a first switching state with a first spontaneous polarization direction and a second switching state with a second spontaneous polarization direction. The conducting channel is magnetoresistive, and a magnetic field strength at the conducting channel in the first switching state is different than a magnetic field strength in the second switching state, whereby a current-voltage characteristic of the conducting channel is dependent on the switching state of the multiferroic material.
摘要翻译：可切换元件该元件包括源电极，漏电极，源电极和漏电极之间的导电沟道，以及具有多铁材料的栅极，可通过向栅极施加电信号而在具有第一和第二栅极的第一开关状态之间切换自发极化方向和具有第二自发极化方向的第二开关状态。导通通道是磁阻的，并且在第一开关状态的导通通道处的磁场强度不同于第二开关状态下的磁场强度，由此导通通道的电流 - 电压特性取决于多铁质材料。

9. 发明授权

US07723714B2 Programmable-resistance memory cell 有权
标题翻译：可编程电阻存储单元
公开(公告)号：US07723714B2
公开(公告)日：2010-05-25
申请号：US11961593
申请日：2007-12-20
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1206 , H01L45/1266 , H01L45/147
摘要： A memory cell (10) comprising at least a source electrode (MS) formed on a substrate (6); at least a drain electrode (MD) formed on the substrate (6); at least a coupling layer (1) formed between the source electrode (MS) and the drain electrode (MD), and at least a gate electrode (MG) formed on the substrate (6), wherein the coupling layer (1) comprises a transition-metal oxide exhibiting a filling-controlled metal-insulator transition property; the gate electrode (MG) comprises an oxygen ion conductor layer (2), and the gate electrode (MG) is arranged relative to the coupling layer (1) such that application of an electrical signal to the gate electrode (MG) causes alteration of the oxygen vacancy (3) concentration in the coupling layer (1).
摘要翻译：一种存储单元（10），至少包括形成在基板（6）上的源极（MS）; 至少形成在所述基板（6）上的漏极（MD）; 至少形成在源电极（MS）和漏电极（MD）之间的耦合层（1），以及至少形成在基板（6）上的栅电极（MG），其中耦合层（1）包括过渡金属氧化物具有填充控制的金属 - 绝缘体转移特性; 栅电极（MG）包括氧离子导体层（2），并且栅电极（MG）相对于耦合层（1）布置，使得向栅电极（MG）施加电信号导致改变耦合层（1）中的氧空位（3）浓度。

10. 发明申请

US20080149911A1 PROGRAMMABLE-RESISTANCE MEMORY CELL 有权
标题翻译：可编程电阻存储器单元
公开(公告)号：US20080149911A1
公开(公告)日：2008-06-26
申请号：US11961593
申请日：2007-12-20
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1206 , H01L45/1266 , H01L45/147
摘要： A memory cell (10) comprising at least a source electrode (MS) formed on a substrate (6); at least a drain electrode (MD) formed on the substrate (6); at least a coupling layer (1) formed between the source electrode (MS) and the drain electrode (MD), and at least a gate electrode (MG) formed on the substrate (6), wherein the coupling layer (1) comprises a transition-metal oxide exhibiting a filling-controlled metal-insulator transition property; the gate electrode (MG) comprises an oxygen ion conductor layer (2), and the gate electrode (MG) is arranged relative to the coupling layer (1) such that application of an electrical signal to the gate electrode (MG) causes alteration of the oxygen vacancy (3) concentration in the coupling layer (1).
摘要翻译：一种存储单元（10），至少包括形成在基板（6）上的源电极（M SUB S）; 至少形成在所述基板（6）上的漏电极（M SUB）; 至少形成在源电极（M SUB）和漏电极（M SUB）之间的耦合层（1）和至少栅电极（M

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