专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08901631B2 Vertical transistor in semiconductor device and method for fabricating the same 有权
标题翻译：半导体器件中的垂直晶体管及其制造方法
公开(公告)号：US08901631B2
公开(公告)日：2014-12-02
申请号：US13792231
申请日：2013-03-11
申请人： Sheng-Wei Yang , Ying-Cheng Chuang , Shyam Surthi
发明人： Sheng-Wei Yang , Ying-Cheng Chuang , Shyam Surthi
IPC分类号： H01L29/94 , H01L29/06 , H01L21/765
CPC分类号： H01L21/765 , H01L21/265 , H01L21/32055 , H01L21/324 , H01L21/76897 , H01L21/823481 , H01L27/088 , H01L27/1052 , H01L27/10876 , H01L29/0607 , H01L29/407 , H01L29/66666 , H01L29/78 , H01L29/7827
摘要： Provided is a method for fabricating a semiconductor device, including the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar. A doped region is formed in the substrate and below each pillar. The doped region below each trench is removed to form an opening such that the doped regions below the adjacent pillars are separated from each other. A shielding layer is formed in each opening.
摘要翻译：提供一种制造半导体器件的方法，包括以下步骤。提供具有多个支柱的基板，其中围绕每个支柱形成多个沟槽。在衬底中并在每个柱下方形成掺杂区域。去除每个沟槽下方的掺杂区域以形成开口，使得相邻支柱之下的掺杂区域彼此分离。在每个开口中形成屏蔽层。

2. 发明申请

US20140252532A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140252532A1
公开(公告)日：2014-09-11
申请号：US13792231
申请日：2013-03-11
申请人： Sheng-Wei Yang , Ying-Cheng Chuang , Shyam Surthi
发明人： Sheng-Wei Yang , Ying-Cheng Chuang , Shyam Surthi
IPC分类号： H01L29/06 , H01L21/765
CPC分类号： H01L21/765 , H01L21/265 , H01L21/32055 , H01L21/324 , H01L21/76897 , H01L21/823481 , H01L27/088 , H01L27/1052 , H01L27/10876 , H01L29/0607 , H01L29/407 , H01L29/66666 , H01L29/78 , H01L29/7827
摘要： Provided is a method for fabricating a semiconductor device, including the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar. A doped region is formed in the substrate and below each pillar. The doped region below each trench is removed to form an opening such that the doped regions below the adjacent pillars are separated from each other. A shielding layer is formed in each opening.
摘要翻译：提供一种制造半导体器件的方法，包括以下步骤。提供具有多个支柱的基板，其中围绕每个支柱形成多个沟槽。在衬底中并在每个柱下方形成掺杂区域。去除每个沟槽下方的掺杂区域以形成开口，使得相邻支柱之下的掺杂区域彼此分离。在每个开口中形成屏蔽层。

3. 发明授权

US09041099B2 Single-sided access device and fabrication method thereof 有权
标题翻译：单面接入装置及其制造方法
公开(公告)号：US09041099B2
公开(公告)日：2015-05-26
申请号：US13084533
申请日：2011-04-11
申请人： Shyam Surthi , Sheng-Wei Yang
发明人： Shyam Surthi , Sheng-Wei Yang
IPC分类号： H01L29/66 , H01L27/108 , H01L29/78 , H01L29/423 , H01L29/10
CPC分类号： H01L27/10826 , H01L27/10876 , H01L27/10879 , H01L29/1037 , H01L29/4236 , H01L29/42372 , H01L29/66795 , H01L29/785
摘要： The present invention provides a single-sided access device including an active fin structure comprising a source region and a drain region; an insulating layer interposed between the source region and the drain region; a trench isolation structure disposed at one side of the active fin structure; a single-sided sidewall gate electrode disposed on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode; and a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded between the source region and the drain region under the insulating layer.
摘要翻译：本发明提供了一种包括源极区和漏极区的有源鳍结构的单面存取装置。介于所述源极区域和所述漏极区域之间的绝缘层; 设置在所述活动鳍结构的一侧的沟槽隔离结构; 设置在与沟槽隔离结构相对的有源鳍结构的另一侧的单面侧壁栅电极，使得活性鳍结构被沟槽隔离结构和单侧壁栅电极夹在中间; 以及从所述单面侧壁栅电极侧向和电气地延伸并且嵌入在所述绝缘层下方的所述源极区域和所述漏极区域之间的栅极突起。

4. 发明申请

US20120256259A1 SINGLE-SIDED ACCESS DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：单面访问装置及其制造方法
公开(公告)号：US20120256259A1
公开(公告)日：2012-10-11
申请号：US13084533
申请日：2011-04-11
申请人： Shyam Surthi , Sheng-Wei Yang
发明人： Shyam Surthi , Sheng-Wei Yang
IPC分类号： H01L29/78
CPC分类号： H01L27/10826 , H01L27/10876 , H01L27/10879 , H01L29/1037 , H01L29/4236 , H01L29/42372 , H01L29/66795 , H01L29/785
摘要： The present invention provides a single-sided access device including an active fin structure comprising a source region and a drain region; an insulating layer interposed between the source region and the drain region; a trench isolation structure disposed at one side of the active fin structure; a single-sided sidewall gate electrode disposed on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode; and a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded between the source region and the drain region under the insulating layer.
摘要翻译：本发明提供了一种包括源极区和漏极区的有源鳍结构的单面存取装置。介于所述源极区域和所述漏极区域之间的绝缘层; 设置在所述活动鳍结构的一侧的沟槽隔离结构; 设置在与沟槽隔离结构相对的有源鳍结构的另一侧的单面侧壁栅电极，使得有源鳍结构被沟槽隔离结构和单侧壁栅电极夹在中间; 以及从所述单面侧壁栅电极侧向和电气地延伸并且嵌入在所述绝缘层下方的所述源极区域和所述漏极区域之间的栅极突起。

5. 发明申请

US20130049074A1 METHODS FOR FORMING CONNECTIONS TO A MEMORY ARRAY AND PERIPHERY 审中-公开
标题翻译：用于形成与存储器阵列和外围设备的连接的方法
公开(公告)号：US20130049074A1
公开(公告)日：2013-02-28
申请号：US13216164
申请日：2011-08-23
申请人： Shyam Surthi , Hung-Ming Tsai
发明人： Shyam Surthi , Hung-Ming Tsai
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L27/1052 , H01L27/10826 , H01L27/10879 , H01L27/10894
摘要： Methods are disclosed for forming connections to a memory array and a periphery of the array. The methods include forming stacks of conductive materials on the array and the periphery and forming a step between the periphery stack and the array stack. The step is removed during subsequent processing, and connections are formed from the conductive materials remaining on the array and the periphery. In some embodiments, the step is removed before any photolithographic processes.
摘要翻译：公开了用于形成到阵列的存储器阵列和外围的连接的方法。所述方法包括在阵列和周边上形成导电材料的叠层并在外围堆叠和阵列堆叠之间形成一个台阶。在随后的处理期间移除该步骤，并且由保留在阵列和周边上的导电材料形成连接。在一些实施例中，在任何光刻工艺之前去除该步骤。

6. 发明申请

US20100112191A1 SYSTEMS AND ASSOCIATED METHODS FOR DEPOSITING MATERIALS 审中-公开
标题翻译：用于沉积材料的系统和相关方法
公开(公告)号：US20100112191A1
公开(公告)日：2010-05-06
申请号：US12262036
申请日：2008-10-30
申请人： Zhe Song , Jeffery B. Hull , Shyam Surthi
发明人： Zhe Song , Jeffery B. Hull , Shyam Surthi
IPC分类号： B05D5/12 , C23C16/54
CPC分类号： C23C16/45534 , C23C16/401 , C23C16/4412 , C23C16/45544 , H01L21/67005
摘要： Several embodiments of systems for depositing materials and associated methods of operation are disclosed herein. In one embodiment, the system includes a reaction chamber having an inlet and an outlet, a gas source coupled to the inlet of the reaction chamber, and a neutralizer source coupled to the outlet of the reaction chamber. The gas source contains a first precursor gas, a second precursor gas, and a purge gas. The neutralizer source contains a neutralizing agent configured to reduce a rate of reaction between the first precursor gas and the second precursor gas.
摘要翻译：本文公开了用于沉积材料和相关操作方法的系统的几个实施例。在一个实施例中，系统包括具有入口和出口的反应室，耦合到反应室的入口的气体源和耦合到反应室的出口的中和剂源。气源包含第一前体气体，第二前体气体和净化气体。中和剂源含有中和剂，其被配置为降低第一前体气体和第二前体气体之间的反应速率。

7. 发明授权

US07557013B2 Methods of forming a plurality of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US07557013B2
公开(公告)日：2009-07-07
申请号：US11402018
申请日：2006-04-10
申请人： Vishwanath Bhat , Niraj B. Rana , Shyam Surthi
发明人： Vishwanath Bhat , Niraj B. Rana , Shyam Surthi
IPC分类号： H01L21/20 , H01L21/8242 , H01L21/76
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Conductive material received over the trench sidewall portion is covered with a silicon nitride-comprising layer which less than fills remaining trench volume. The insulative material within the array area and the silicon nitride-comprising layer are etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.
摘要翻译：形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。中间区域包括沟槽。导电材料形成在开口内并抵靠沟槽的侧壁部分，以小于完全填充沟槽。接收在沟槽侧壁部分上的导电材料覆盖有少于填充剩余沟槽体积的含氮化硅的层。阵列区域内的绝缘材料和含氮化硅的层用液体蚀刻溶液进行蚀刻，该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分，并露出沟槽内的导电材料。阵列区域内的导电材料被并入多个电容器中。

8. 发明申请

US20090042404A1 Semiconductor processing 有权
标题翻译：半导体处理
公开(公告)号：US20090042404A1
公开(公告)日：2009-02-12
申请号：US11891575
申请日：2007-08-10
申请人： Shyam Surthi
发明人： Shyam Surthi
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/45546 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02211 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequentially introduced into a reaction chamber having an associated process temperature. The method includes removing residual first reactant from the chamber after introduction of the first reactant, removing residual second reactant from the chamber after introduction of the second reactant, and establishing a temperature differential substantially between an edge of the substrate and a center of the substrate via a purge process.
摘要翻译：本公开的实施例包括半导体处理方法和系统。一种方法包括在半导体衬底上形成材料层，方法是将衬底的沉积表面暴露于至少第一和第二反应物，该第一和第二反应物依次导入具有相关工艺温度的反应室中。该方法包括在引入第一反应物之后从室中除去残留的第一反应物，在引入第二反应物之后从室中除去残留的第二反应物，并且基本上在衬底的边缘和衬底的中心之间建立温差清洗过程。

9. 发明申请

US20070238259A1 Methods of forming a plurality of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US20070238259A1
公开(公告)日：2007-10-11
申请号：US11402018
申请日：2006-04-10
申请人： Vishwanath Bhat , Niraj Rana , Shyam Surthi
发明人： Vishwanath Bhat , Niraj Rana , Shyam Surthi
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Conductive material received over the trench sidewall portion is covered with a silicon nitride-comprising layer which less than fills remaining trench volume. The insulative material within the array area and the silicon nitride-comprising layer are etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.
摘要翻译：形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。中间区域包括沟槽。导电材料形成在开口内并抵靠沟槽的侧壁部分，以小于完全填充沟槽。接收在沟槽侧壁部分上的导电材料覆盖有少于填充剩余沟槽体积的含氮化硅的层。阵列区域内的绝缘材料和含氮化硅的层用液体蚀刻溶液进行蚀刻，该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分，并露出沟槽内的导电材料。阵列区域内的导电材料被并入多个电容器中。

10. 发明申请

US20140057402A1 Methods of Forming Memory Arrays and Semiconductor Constructions 有权
标题翻译：形成记忆阵列和半导体结构的方法
公开(公告)号：US20140057402A1
公开(公告)日：2014-02-27
申请号：US13591074
申请日：2012-08-21
申请人： Jaydip Guha , Shyam Surthi
发明人： Jaydip Guha , Shyam Surthi
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L27/10876 , H01L21/02532 , H01L21/0257 , H01L21/02598 , H01L21/26513 , H01L21/324 , H01L21/8222 , H01L21/8229 , H01L21/823487 , H01L27/0814 , H01L27/0823 , H01L27/1021 , H01L27/1022 , H01L27/1052 , H01L27/1085 , H01L27/10894 , H01L27/10897 , H01L29/04 , H01L29/16 , H01L29/6609 , H01L29/66272 , H01L29/66666 , H01L29/732 , H01L29/868
摘要： Some embodiments include methods of forming semiconductor constructions. A heavily-doped region is formed within a first semiconductor material, and a second semiconductor material is epitaxially grown over the first semiconductor material. The second semiconductor material is patterned to form circuit components, and the heavily-doped region is patterned to form spaced-apart buried lines electrically coupling pluralities of the circuit components to one another. At least some of the patterning of the heavily-doped region occurs simultaneously with at least some of the patterning of the second semiconductor material.
摘要翻译：一些实施例包括形成半导体结构的方法。在第一半导体材料内形成重掺杂区，并且在第一半导体材料上外延生长第二半导体材料。将第二半导体材料图案化以形成电路部件，并且对重掺杂区域进行图案化以形成将多个电路部件彼此电耦合的间隔开的掩埋线。至少一些重掺杂区域的图案化与第二半导体材料的至少一些图案化同时发生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式